• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.38-38
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• 1997

In the paper, we investigate the magneto-impedance(MI) effect of the Fe-Co-B Amorphous magnetic film, the amorphous magnetic film having near zero magnetostostriction is fabricated by using the sputtering methode, and then annealed in magnetic field. When the external magnetic field is directly applied to the fabricated film, the voltage amplitude between both side of the magnetic film varies about 22% at 10[MHz] and the impedance varies about 21% at 10[Oe]. Thus, we find that the fabricated magnetic film has the characteristics of high-quality sensor element.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.281-286
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• 2002

In odder to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. First, we prepared CoCr and CoCrTa single layer using the Facing Targets Sputtering system to investigate theirs properties. It was revealed that with increasing the film thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. The CoCrTa thin film showed bettor crystalline and magnetic characteristics than CoCr thin film. As a result of investigating magnetic properties of CoCr and CoCrTa magnetic layer on introducing the Si underlayer, perpendicular coercivity and saturation magnetization of CoCr/Si and CoCrTa/Si bilayered thin film were decreased due to the increased grain size and diffusion of Si atoms to magnetic layer. And they showed constant with increasing the film thickness of Si thin film. However, in case of CoCrTa/Si bilayered thin film, in-plane coercivity was controlled low at about 250Oe. The c-axis orientations of CoCr/si and CoCrTa/Si bilayered thin film showed a good crystalline characteristics as about $2^{\circ}$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.333-338
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• 1999

Thin film inductors of $10 mm \times 10 mm$ with inner coil type of 14 turns were fabricated by sputtering, photo-masking, and etching processes. Their characteristics of impedances and annealing after were investigated. The properties of impedances of the thin film magnetic core inductors with inner coil type were improved by magnetic field annealing due to the removal of residual stress and the improvement magnetic properties of magnetic films. But the characteristics of frequency of the thin film magnetic core inductors were not improved by magnetic field annealing due to properties of the spiral pattern and inner coil type. The thin film magnetic core inductor annealed by uniaxal field annealing method showed an inductance of 1000 nH and resistance of$ 6 \Omega$ of 1 at 2 MHz.

• Journal of the Korean institute of surface engineering
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• v.26 no.2
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• pp.45-54
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• 1993

In this study, magnetic properties of anodized Al film deposited with ferro-magnetic metals in the capacity of perpendicular magnetic recording media were measured and evaluated to find out the role of structure and morphology of the oxide films on magnetic characteristics. The object of this work was to present the conditions of magnetic thin film formation with more superior magnetic property. Anodizing was carried out under various conditions, and then the anodized film were electro-deposited with Co, Ni, Fe and their alloys. Coercive force and residual magnetization in perpendicular direction increased as the pore length of anodized film increased. It was attributed to the increase of the amount of depoisted metals and the ratio of length/diameter of pores. Morphology of anodized films in phosperic acid was not similar to that of sulfuric acid, and thin films in the former solution had perpendcular magnetic anisostropy because of large diameter, irregular length and distribution of the pores. It was found that magnetic properties of the thin films, which had doubled layer of two metals, were dominated by the metal electrodeposited on the surface of the anodized oxide films.

• Journal of Magnetics
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• v.11 no.3
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• pp.130-134
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• 2006

The microwave power absorption for the patterned CoNbZr magnetic film has been investigated by coplanar waveguide method. The power absorption peaks of the patterned CoNbZr film (50 ${\mu}m$ ${\times}$ 2 mm ${\times}$ 2 ${\mu}m$), were observed at around 5.7 GHz. The observed resonance peak was in good agreement with calculated ferromagnetic resonance frequency including magnetic shape anisotropy effects. Compared with the coplanar waveguide without a magnetic film, the characteristic impedance of patterned film was shown to be increased. This resulted from the large increment of inductance up to 33 % without any significant changes of the capacitance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.74-83
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• 2001

In this study, the optimum structure of a magnetic thin film inductor was designed for application of DC-DC converters. The Ni$\sub$81/Fe$\sub$19/ (at%) alloy was selected as a high-frequency($\geq$MHz) magnetic thin film magnetron sputtering system. As-deposited NiFe thin films show similar magnetic properties compared to bulk NiFe alloys, indicating that they have a good film quality. The optimum design of dolenoid-type magnetic thin film inductors was performed utilizing a Maxwell computer simulator (Ansoftt HFSS V7.0 for PC) and parameters obtained from the magnetic properties of magnetic core materials selected. The high-frequency characteristics of the inductance(L) and quality factor(Q) obtained for the designed inductors through simulation agreed well with those obtained by theoretical calculations, confirming that the simulated result is realistic. The optimum structure of high-performance (Q$\geq$60, L = 1${\mu}$H, efficiency $\geq$90%), high-frequency ($\geq$5MHz), and solenoid-type magnetic thin film inductors was designed successfully.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.225-225
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• 2010

In this study, the optimum structure of a magnetic thin film inductor was designed for application of DC-DC converters. The $Ni_{81}Fe_{19}$ (at%) alloy was selected as a high-frequency($\geq$ MHz) magnetic thin film core material and deposited on various substrates (bare Si, $SiO_2$ coated Si) using a high vacuum RF magnetron sputtering system. As-deposited NiFe thin films show similar magnetic properties compared to bulk NiFe alloys, indicating that they have a good film quality. The optimum design of solenoid-type magnetic thin film inductors was performed utilizing a Maxwell computer simulator (Ansoft HFSS V7.0 for PC) and parameters obtained from the magnetic properties of magnetic core materials selected. The high-frequency characteristics of the inductance(L) and quality factor(Q) obtained for the designed inductors through simulation agreed well with those obtained by theoretical calculations, confirming that the simulated result is realistic. The optimum structure of high-performance ($Q{\geq}60$, $L\;=\;1{\mu}H$, efficiency${\geq}90%$), high-frequency (${\geq}5MHz$), and solenoid-type magnetic thin film inductors was designed successfully.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.444-450
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• 2000

We prepared Co-Cr thin film for perpendicular magnetic recording media with facing targets sputtering system(FTS system) which can deposit a high quality thin film in plasma-free state and wide range of working pressure. The effect of sputtering conditions(argon gas pressure and substrate temperature) on the magnetic and the crystallographic characteristic of Co-Cr thin film was investigated. And the variation of perpendicular coercivity with the variation of film thickness was studied. As a result we obtained the high perpendicular coercivity of 1900Oe and the good dispersion angle of c-axis($\Delta$$\theta$$_{50}$) of 5$^{\circ}$on the film thickness of 100nm for the promising recording layer of perpendicular magnetic recording media.c recording media.a.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.443-446
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• 2001

MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field(H$\sub$k/) as a function of a thickness of sputtered amorphous CoZrNb thin film with high saturation magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, thin film was subjected to post annealing with a static magnetic field with 1KOe intensity at 250, 300, and 320$^{\circ}C$ for 2 hour. Anisotropy field(H$\sub$k/)of thin film is measured by using MH loop tracer. Its magnetic permeability of thin film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb thin film is decreased due to the skin effect with increasing a thickness of CoZrNb thin film, and hence its driving frequency is lowered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.778-781
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• 2002

MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in the low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field$(H_k)$ as a function of a thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and $320^{\circ}C}$ respectively for 2 hours. Anisotropy field$(H_k)$ of film is measured by using a MH loop tracer. Its magnetic permeability of a film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb film is decreased due to the skin effect with increasing a thickness of the CoZrNb film, and hence its driving frequency is lowered. And, it was examined on the permeability and impedance to fabricate the MI sensor which acts at a low frequency by thickening a CoZrNb film relatively.