• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• Journal of the Korean Magnetics Society
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• v.10 no.2
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• pp.54-61
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• 2000

The structural and magnetic properties of sputtered CoNbZr alloy films were investigated. In the as-deposited $Co_{87.0}$N $b_{8.5}$Z $r_{4.5}$ film deposited at 2 mTorr and 130 W, we observed the minimum coercivity of 1.75 Oe, the maximum resistivity of 3000 $\mu$Ω.cm and permeability of 1095 at 100 MHz. As the Ar pressure or the RF input power increased, the permeability of films at 100 MHz decreased and the coercivity increased because of the development of columnar structure and the formation of unstable amorphous phase. Permeability lower than 100 and coercivity of 60 Oe were observed in film deposited at 1 mTorr or 190 W due to the formation of crystalline phase. Magnetic anisotropy field of as-deposited films could be reduced by rotating field annealing for 120 minutes at 30$0^{\circ}C$. After the annealing, the anisotropy field (Hk) decreased from 1.43 Oe to 0.3 Oe and the permeability increased from 1095 to 1345 because defects in as-deposited films were eliminated by the annealing.aling.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.13-16
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• 2000

In this study, we have fabricated nonequilibrium $Fe_{85.6}Zr_{3.3}B_{5.7}Ag_{5.4}$ thin film, which contains an additional insoluble element Ag, by using DC magnetron sputtering method. We have investigated the magnetic properties of amorphous $Fe_{85.6}Zr_{3.3}B_{5.7}Ag_{5.4}$ thin film as a function of rotational field annealing(RFA). After deposition, the amorphous $Fe_{85.6}Zr_{3.3}B_{5.7}Ag_{5.4}$ thin film annealed by rotational field annealing method at $350^{\circ}C$ for an hour was founded to have high permeability of 8680 of 100 MHz, 0.2 mOe, low coercivity of 0.86 De and very low core loss of 1.3 W/cc at 1 MHz, 0.1T.

• Journal of Magnetics
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• v.3 no.4
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• pp.123-126
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• 1998

The magneto-impedance (MI) has been measured in the annealed Co66Fe4Ni1B14Si15 amorphous ribbon for the evaluation of anisotropy field. MI at the frequency of 10 MHz is related to the transverse permeability from rotational magnetization depending on the local anisotropy field. MI varies sensitively with the annealing temperature, reflecting the change of anisotropy field distribution. The local anisotropy fields evaluated from MI Profiles are discussed in terms of the magnetic softness and microstructural change by the annealing.

• Journal of the Korean Magnetics Society
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• v.12 no.2
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• pp.46-50
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• 2002

Soft magnetic Mumetal thin film was fabricated under magnetic field at various substrate temperatures. High vacuum annealing was carried out at 200$\^{C}$ during 1 hr. The in-plane anisotropy of Mumetal thin film was determined from hysteresis loops measured by VSM when the sample axis varied from the field direction from 0°to 180°. As the substrate temperature increases, the coercivity in easy direction decreases, but uniaxial anisotropy deviates from the field direction. After vacuum annealing at 200$\^{C}$ for 1 hr, the uniaxial anisotropy is improved irrespective of substrate temperature. When the substrate temperature was 50$\^{C}$, the anisotropy field is 4.3 Oe. As the substrate temperature increases anisotropy field decreases. Uniaxial anisotropy of Mumetal thin film was formed best at 50$\^{C}$ before and after annealing.

• Journal of Magnetics
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• v.11 no.1
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• pp.55-59
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• 2006

The effect of annealing temperature on the permeability and giant magneto-impedance (GMI) behaviors of $Fe_{68.5}Mn_{5}Si_{13.5}B_9Nb_3Cu_1$ amorphous alloy has been systematically investigated. The nanocrystalline $Fe_{68.5}Mn_{5}Si_{13.5}B_9Nb_3Cu_1$ alloys consisting of ultra-fine $(Fe,Mn)_3Si$ grains embedded in an amorphous matrix were obtained by annealing their precursor alloy at the temperature range from $500^{\circ}C\;to\;600^{\circ}C$ for 1 hour in vacuum. The permeability and GMI profiles were measured as a function of external magnetic field. It was found that the increase of both the permeability and the GMI effect with increasing annealing temperature up to $535^{\circ}C$ was observed and ascribed to the ultrasoft magnetic properties in the sample, whereas an opposite tendency was found when annealed at $600^{\circ}C$ which is due to the microstructural changes caused by high-temperature annealing. The study of temperature dependence on the permeability and GMI effect showed some insights into the nature of the magnetic exchange coupling between nanocrystallized grains through the amorphous boundaries in nanocrystalline magnetic materials.

• Proceedings of the Korean Magnestics Society Conference
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• 2001.04a
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• pp.60-61
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• 2001

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.5
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• pp.496-500
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• 1991

The effects of annealing with and without magnetic field on magnetic properties of amorphous Fe-B-Si cores have been investigated as a function of toroidal stress. By decreasing the toroidal stress, the magnetic properties of the amorphous ribbon have beenimproved. Near 180 domain walls exist in the thermally annealed toroidal cores, but the domain walls exist in the thermally annealed toroidal cores, but the domain walls are not parallel to the longitudinal direction of the ribbon. In the specimen annealed with a magnetic field strength of 10 Oe in the longitudinal ribbon length axis, the domains are nearly parallel to the longitudinal direction due to the field induced uniaxial anisotropy resulting in further increase in the remanent magnetization and decrease in the coercive force and loss.

• Journal of Magnetics
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• v.1 no.1
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• pp.31-36
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• 1996

An externally applied magnetic field during heat treating the $Nd_2Fe_{14}B/Fe_3B$ based spring magnet was found to enhance the exchange coupling between the hard and soft magnetic grains. More than 30% increase in $M_r/M_s$ values for melt-spun $Nd_2Fe_{73.5}Co_3$$(Hf_{1-x}Ga_x)B_{18.5}$ (x=0, 0.5, 1) alloys was resulted from a uniform distribution of $Fe_3B, \alpha-Fe$ and $Nd_2Fe_{14}B$ phases, and also from a reduced grain size of those phases by 20%. The externally applied magnetic field induced a uniform distribution of fine grains. A study of Mossbauer effect also report that the enhancement of total magnetization of nanocomposite $Nd_2Fe_{14}B/Fe_3B$ alloys is attributed to an increased formation of $Fe_3$B after magnetic annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.633-636
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• 1999

In this study, we have fabricated amorphous FeZrBAg thin films with low core losses by using DC magnetron sputtering method. After deposition, rotational field annealing (RFA) method was performed in the dc field of 1.5 kOe. The amorphous FeZrBAg thin films produced by annealing at 35$0^{\circ}C$ was founded to have high permeability of 8680 at 100 MHz, 0.2 mOe, low coercivity of 0.86 Oe high magnetization of 1.5 T and very low core loss of 1.3 W/cc at 1 MHz, 0.IT respectively. Excellent soft magnetic properties in a amorphous FeZrBAg thin films in the present study are presumably the homogeneous formation of very fine bcc $\alpha$-Fe crystalline with the 8.2 nm in an amorphous FeZrBAg thin film matrix.