• Journal of Electrical Engineering and Technology
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• 제2권4호
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• pp.532-536
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• 2007

Carbon nanotube (CNT) properties, produced using a magnetic null discharge (MND) plasma production technology, were investigated. We firstly deposited the Fe layer 200 nm in thickness on Si substrate by the magnetic null discharge sputter method at the substrate temperature of $300도C$, and then prepared CNTs on the catalyst layer by using the magnetic null discharge (MND) based CVD method. CNTs were deposited in a gas mixture of CH4 and N2 at a total pressure of 1 Torr by the MND-CVD method. The substrate temperature and the RF power were $650^{\circ}C$ and 600W, respectively. The characterization data indicated that the proposed source could synthesize CNTs even under relatively severe conditions for the magnetic null discharge formation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1150-1151
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• 2008

Titanium-doped indium oxide (ITiO) films were prepared on soda-lime glass substrate using a magnetic null discharge (MND) sputter source. The ITiO thin films containing 10 wt.% Ti showed the minimum resistivity of ${\rho}=5.5{\times}10^{-3}{\Omega}cm$. The optical transmittance increases from 70% at 450 nm to 80% at 700 nm in visible spectrum. The surface roughness of the sample showed a change from 10 nm to 50 nm. The ITiO film used for TCO layer of DSCs exhibited an energy conversion efficiency of about 3.8 % at light intensity of 100 $mW/cm^2$.

• 조명전기설비학회논문지
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• 제23권1호
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• pp.169-175
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• 2009

본 실험에서 자계중성방전 스파트링 시스템으로 균일한 산화 몰리브덴 박막을 얻을 수 있었다. 한편, 열처리 조건에 따라 박막의 제반특성은 XRD, XPS 및 SEM 등으로 고찰되었다. 기판의 열처리 온도에 따라 결정성장배향이 (100)에서 (210)으로 변함으로써, 박막의 결정성이 향상되었으며, 박막의 구조는 치밀해졌다. 광전자 Mo3d의 XPS 피크치는 결합에너지 228.9[eV]과 232.4[eV]에서 검출되었지만, O1s 피크치는 532.6[eV]였다. 서지 전압으로 방전시험은 연속적으로 10회 수행되었다. 전류-전압 특성곡선으로부터, 400[V]의 전압이 인가된 상태에서 시료의 초기 및 평균 저항치는 1.4[$M{\Omega}$]과 800[$M{\Omega}$]이었다.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2008년도 추계학술대회 논문집
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• pp.205-210
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• 2008

Titanium-doped indium oxide (ITiO) films were prepared on soda-lime glass substrate using a magnetic null discharge (MND) sputter source. The ITiO thin films containing 10wt.% Ti showed the minimum resistivity of $\rho=5.5{\times}10^{-3}{\Omega}-cm$. The optical transmittance increases from 70% at 450 nm to 80% at 700 nm in visible spectrum. Photoelectron peaks for In 3d, Ti 2p, O 1s and C1s were detected for the ITiO film in the binding energy range of 0 to 1100 eV. The surface roughness of the sample showed a change from 10 nm to 50 nm. The ITiO film used for TCO layer of DSCs exhibited an energy conversion efficiency of about 3.8% at light intensity of 100 mW/$cm^2$.