• Asian-Australasian Journal of Animal Sciences
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• v.16 no.2
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• pp.290-296
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• 2003

Tsaiya ducks and Leghorn hens are the two major laying birds raised in Taiwan. They are all excellent egg layers. Tsaiya ducks are small in body size (1.3 kg) with bigger egg weight (65 g) and stronger eggshell breaking strength than eggs from hens. The eggshell consists mainly of calcium carbonate, hence calcium plays an important role in the eggshell formation. Magnesium is also present in eggshell in small amounts, which may have effect on maintaining eggshell quality. In comparison studies, it was shown that the duck eggshells contained higher calcium and lower magnesium content than chicken eggshells. The eggshell magnesium content was not affected by the dietary magnesium levels (690-2380 ppm) in ducks, but in hens, it increased linearly with dietary magnesium levels. The palisade layer ($5000{\times}$) of the eggshell was found to have a compact form for ducks while there are many hallow vesicles in chicken eggshells. The eggshell magnesium deposition model is different for ducks and hens with ducks having a one-peak and hens having a two-peak model. The calcium deposition model is similar for both birds. Both the carbonic anhydrase specific activity and total activity in the shell gland mucosa of ducks are higher than those in hens. Ducks retain higher magnesium and lower calcium in the shell gland mucosa and secret less magnesium and more calcium into the shell gland lumen for eggshell deposition. The ATPase specific activity is maintained fairly constant during the eggshell forming stage, indicating continuous calcium transport into the shell gland lumen for eggshell formation. The magnesium content in duck eggshells is much lower than that in hens indicating that the magnesium content in the eggshell may have an effect on eggshell quality.

• Journal of Electrical Engineering and Technology
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• v.1 no.1
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• pp.110-113
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• 2006

A high rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 kW unipolar pulsed power supply. The power supply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The pulse repetition rate and the duty were changed in the ranges of $10\sim50$ kHz and $10\sim60%$, respectively. The deposition rate increased with rising incident power to the target. Maximum incident power to the magnesium target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 nm m/min at the average power of 1.5 kW. This result shows higher deposition rate than any other previous work involving reactive sputtering in oxide mode. The thickness uniformities over the entire substrate area of $982mm{\times}563mm$ were observed at the processing pressure of $2.8\sim9.5$ mTorr. The thickness distribution was improved at lower pressure. This technique is proposed for application to a high through-put sputtering system for plasma display panels.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.153-156
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• 2007

Structural and electrical properties of the fully crystallized-bismuth magnesium niobate ($Bi_2Mg_{2/3}Nb_{4/3}O_7$, BMN) films with 15 mol% excess bismuth deposited on Pt bottom electrode by pulsed laser deposition are characterized for various deposition temperatures. The BMN films were crystallized with a monoclinic structure from $300^{\circ}C$ and the surface roughness slightly decreases with increasing deposition temperature. The capacitance density of the films increases with increasing deposition temperature and especially, films deposited at $400^{\circ}C$ exhibit a capacitance density of approximately $620nF/cm^2$. The crystallized BMN films with approximately 170 nm thickness exhibit breakdown strength above 600 kV/cm (${\leq}10V$) irrespective of deposition temperature and a leakage current density of approximately $2{\times}10^{-8}A/cm^2$ at 590kV/cm (at 10 V).

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1874-1875
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• 2004

A high rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 kW unipolar pulsed power supply. The powersupply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The pulse repetition rate and the duty were changed in the ranges of 10 ${\sim}$ 50 kHz and 10 ${\sim}$ 60 %, respectively. The deposition rate increased with increasing incident power to the target. Maximum incident power to the magnesium target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 nm m/min at the average power of 1.5 kW. This technique is proposed to apply high through-put sputtering system for plasma display panel.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1560-1561
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• 2006

A high rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 kW unipolar pulsed power supply. The power supply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The pulse repetition rate and the duty were changed in the ranges of $10{\sim}50\;kHz$ and $10{\sim}60%$, respectively. The deposition rate increased with rising incident power to the target. Maximum incident power to the magnesium target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 nm m/min at the average power of 1.5 kW.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.32-32
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• 2015

Electrophoretic paint (E-paint) was investigated on four different magnesium substrates: as-extruded AZ61 (AZ61), heat-treated AZ61 (AZ61-H), as-extruded TZ61 (TZ61) and heat-treated TZ61 (TZ61-H), to elucidate the effect of heat treatment and alloying elements on the deposition and corrosion resistance of E-paint. It was found that, a rapid increase of voltage, indicating that the deposition of E-paint had started, was observed after an induction time of 0.39 min for AZ61-H, 0.43 min for AZ61, 0.51 min for TZ61-H and 0.58 min for TZ61. The amount of E-paint deposited on the four samples was approximately similar, but the electrical charge used for the deposition process on the heat-treated samples was smaller than that on the as-extruded samples. The current efficiencies of E-paint on AZ samples (AZ61 and AZ61-H) were higher than those of TZ samples (TZ61 and TZ61-H), and on the heat-treated samples were higher than on as-extruded samples. All E-paintings on the four magnesium substrates had an excellent adhesion without any paint detached by tape peel-test. However, many large blisters were formed on the surface of AZ samples, and none, or very small blisters were observed on TZ samples after immersion test in DI-water for 500 h at $40^{\circ}C$. Under salt spray test (SST) conditions, E-paint on AZ samples showed blistering adjacent to scribes, while blistering of E-paint occurred on intact areas of TZ samples. The E-paint on heat-treated samples showed much better corrosion resistance than that on as-extruded samples. The ranking of greater to lesser corrosion resistance of the E-paint on these four different magnesium substrates is indicated by the order: AZ61-H > AZ61 > TZ61-H > TZ61.

• Journal of Advanced Marine Engineering and Technology
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• v.20 no.5
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• pp.103-113
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• 1996

The properties of the deposited film depend on the deposition condition and these, in turn depend critically on the morphology and crystal orientation of the films. Therefore, it is important to clarify the nucleation occurrence and growth stage of the morphology and orientation of the film affected by deposition parameters, e.g. the gas pressure and bias voltage etc. In this work, magnesium thin flims were prepared on cold-rolled steel substrates by a thermo-eletron activation ion plating technique. The influence of nitrogen gas pressure and substrate bias voltage on their crystal orientation and morphology of the coated films were investigated by scanning electron microscopy (SEM) and X-ray diffraction, respectively. The diffraction peaks of magnesium film became less sharp and broadened with the increase of nitrogen gas pressure. With an increase in nitrogen gas pressure, flim morphology changed from colum nar to granular structure, and surface crystal grain-size decreased. The morphology of films depended not only on gas pressure but also on bias voltage, i.e., the effect of increasing bias voltage was similar to that of decreasing gas pressure. The effect of crystal orientation and morphology of magnesium films on corrosion behaviors was estimated by measuring anodic polarization curves in deaerated 3%NaCl solution. Magnesium, in general, has not a good corrosion resistance in all environments. However, these magnesium films prepared by changing nitrogen gas pressure showed good corrosion resistance. Among the films, magnesium films which exhibited granular structure had the highest corrosion resistance. The above phenomena can be explained by applying the effects of adsorption, occlusion and ion sputter of nitrogen gas.

• Journal of Electrochemical Science and Technology
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• v.3 no.4
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• pp.159-164
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• 2012

Magnesium (Mg) deposition and dissolution behaviors of 0.2 M $MgBu_2-(AlCl_2Et)_2$, 0.5 M $Mg(ClO_4)_2$, and 0.4M $(PhMgCl)_2-AlCl_3$-based electrolytes with and without tris(pentafluorophenyl) borane (TPFPB) are investigated by ex situ scanning electron microscopy (SEM) and galvanostatic cycling of Mg/copper (Cu) cells. To ascertain the factors responsible for the anodic stability of the electrolytes, linear sweep voltammogrametry (LSV) experiments for various electrolytes and solvents are conducted. The effects of TPFPB as an additive on the anodic stability of 0.4M ($(PhMgCl)_2-AlCl_3$/THF electrolyte are also discussed.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.96-101
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• 2008

The magnesium oxide (MgO) protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by Ion-Beam-Assisted Deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, Oxygen-Neutral-Beam-Assisted Deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in structural and discharge characteristics. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when the MgO thin film was deposited with an oxygen neutral beam energy of 300eV. The surface morphology of MgO thin film was also analyzed using AFM (Atomic Force Microscopy) and SEM (Scanning Electron Microscopy).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.364.2-364.2
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• 2014

Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.