• Title/Summary/Keyword: Macro Model

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SPICE Macro-Model for Magnetic Tunnel Junction (Magnetic Tunnel Junction의 SPICE Macro-Model)

  • 홍승균;송상헌;김수원
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.2
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    • pp.98-103
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    • 2003
  • This paper proposes new SPICE Macro-Model of Magnetic Tunnel Junction (MTJ) This Macro-Model has five I/O terminals, reproduces MTJ MR characteristics including hysteresis and behaves correctly to time varying input signals. Furthermore, this Model can be easily modified to various MTJs with different characteristics by simply varying internal parameters.

Macro-Model of Magnetic Tunnel Junction for STT-MRAM including Dynamic Behavior

  • Kim, Kyungmin;Yoo, Changsik
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.6
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    • pp.728-732
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    • 2014
  • Macro-model of magnetic tunnel junction (MTJ) for spin transfer torque magnetic random access memory (STT-MRAM) has been developed. The macro-model can describe the dynamic behavior such as the state change of MTJ as a function of the pulse width of driving current and voltage. The statistical behavior has been included in the model to represent the variation of the MTJ characteristic due to process variation. The macro-model has been developed in Verilog-A.

Macro-Modeling for Magnetic Tunnel Junction (Magnetic Tunnel Junction 의 Macro-Modeling)

  • 홍승균;송상헌;김수원
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.943-946
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    • 2003
  • This paper proposes new SPICE Macro-Model of MTJ(Magnetic Tunnel Junction). This Macro-Model has five I/O terminals, reproduces MR characteristics including hysteresis and behaves correctly to time varying input signals. Furthermore, this Model can be easily modified to various MTJs with different characteristics by simply varying internal parameters.

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A Macro Parametric Data Representation far CAD Model Exchange using XML (CAD 모델 교환을 위한 매크로 파라메트릭 정보의 XML 표현)

  • 양정삼;한순흥;김병철;박찬국
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.27 no.12
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    • pp.2061-2071
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    • 2003
  • The macro-parametric approach, which is a method of CAD model exchange, has recently been proposed. CAD models can be exchanged in the form of a macro file, which is a sequence of modeling commands. As an event-driven commands set, the standard macro file can transfer design intents such as parameters, features and constraints. Moreover it is suitable for the network environment because the standard macro commands are open, explicit, and the data size is small. This paper introduces the concept of the macro-parametric method and proposes its representation using XML technology. Representing the macro-parametric data using XML allows managing vast amount of dynamic contents, Web-enabled distributed applications, and inherent characteristic of structure and validation.

HSPICE Macro-Model and Midpoint-Reference Generation Circuits for MRAM (MRAM용 HSPICE 마크로 모델과 midpoint reference 발생 회로에 관한 연구)

  • 이승연;이승준;신형순
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.8
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    • pp.105-113
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    • 2004
  • MRAM uses magneto-resistance material as a storage element, which stores cell data as a polarization of spin in a free magnetic layer. This magneto-resistance material has hysteresis, asteroid curve at the thermal variation, and R-V characteristics for switching the data. Therefore, a macro-model which can reproduce these characteristics is required for MRAM simulation. We propose a macro-model of TMR (Tunneling Magneto Resistance) that can reproduce all of these characteristics on HSPICE. Also we propose a novel sensing scheme, which generates reference resistance having the medium value, ( $R_{H}$+ $R_{L}$)/2, for a wide range of applied voltage and present simulation results based on the HSPICE macro-model of MTJ that we have developed.d.d.

CMOS Macro Model for Toggling MRAM Cell and Design of Core Architecture (Toggling MRAM cell을 위한 CMOS Macro Model과 Core Architecture 설계)

  • Go, Soon-Bog;Song, Ha-Sun;Kim, Bum-Su;Kim, Dea-Jeong
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.525-526
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    • 2006
  • A macro model for Savtchenko switching mode MRAM (toggling MRAM) cells which can be utilized to develop the core architecture and the peripheral circuitry is proposed, and a writing scheme suitable to the toggling characteristic is developed. The sensing and writing operations of the toggling MRAM adopting the macro model are verified by Spectre simulations.

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New SPICE Modeling for Bias-Dependent Gate-Drain Overlap Capacitance in RF MOSFETs (RF MOSFET의 바이어스 종속 게이트-드레인 오버렙 캐패시턴스의 새로운 SPICE 모델링)

  • Lee, Sangjun;Lee, Seonghearn
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.4
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    • pp.49-55
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    • 2015
  • The inaccuracy of the bias-dependent gate-drain overlap capacitance $C_{gdo}$ simulation in original BSIM4 and BSIM4 macro model using a diode is analyzed in detail. It is found that the accuracy of the macro model is better than of the BSIM4. However, the macro model cannot be used in the linear region. In order to remove the inaccuracy of the conventional models, a new BSIM4 macro model with a physical bias-dependent $C_{gdo}$ equation is proposed and its accuracy is validated in the full bias range.

A Hybrid Parametric Translator Using the Feature Tree and the Macro File (피처 트리와 매크로 파일을 이용하는 하이브리드 파라메트릭 번역기)

  • 문두환;김병철;한순흥
    • Korean Journal of Computational Design and Engineering
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    • v.7 no.4
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    • pp.240-247
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    • 2002
  • Most commercial CAD systems provide parametric modeling functions, and by using these capabilities designers can edit a CAD model in order to create design variants. It is necessary to transfer parametric information during a CAD model exchange to modify the model inside the receiving system. However, it is not possible to exchange parametric information of CAD models based on the cur-rent version of STEP. The designer intents which are contained in the parametric information can be lost during the STEP transfer of CAD models. This paper introduces a hybrid CAB model translator, which also uses the feature tree of commercial CAD systems in addition to the macro file to allow transfer of parametric information. The macro-parametric approach is to exchange CAD models by using the macro file, which contains the history of user commands. To exchange CAD models using the macro-parametric approach, the modeling commands of several commercial CAD systems are analyzed. Those commands are classified and a set of standard modeling commands has been defined. As a neutral fie format, a set of standard modeling commands has been defined. Mapping relations between the standard modeling commands set and the native modeling commands set of commercial CAD systems are defined. The scope of the current version is limited to parts modeling and assemblies are excluded.

Enhanced macro element for nonlinear analysis of masonry infilled RC frame structures

  • Mebarek Khelfi;Fouad Kehila
    • Earthquakes and Structures
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    • v.25 no.3
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    • pp.177-186
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    • 2023
  • Reinforced concrete frames with a masonry infill panel is a structural typology frequently used worldwide. In seismic cases, the interaction between the masonry infill and the RC frames constitutes one of the most complex subjects in earthquake engineering. In this work, an enhancement of an existing numerical model is proposed to improve the estimation of lateral strength and stiffness of masonry-infilled frame structures and predict their probable failure modes. The proposed improvement is based on attributing corrective coefficients to the shear strength of each diagonal shear spring of the macro element, which simulates the masonry infill. The improved numerical model is validated by comparing the results with those of the original numerical model and with experimental results available in the literature. The enhanced macro element model can be used as a powerful, accessible tool for assessing the capacity and stiffness of masonry-infilled frame structures and predicting their probable failure modes.

A CMOS Macro-Model for MRAM cell based on 2T2R Structure (2-Transistor와 2-Resister 구조의 MRAM cell을 위한 CMOS Macro-Model)

  • 조충현;고주현;김대정;민경식;김동명
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.863-866
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    • 2003
  • Recently, there has been growing interests in the magneto-resistive random access memory (MRAM) because of its great potential as a future nonvolatile memory. In this paper, a CMOS macro-model for MRAM cell based on a twin cell structure is proposed. The READ and WRITE operations of the MTJ cell can be emulated by adopting data latch and switch blocks. The behavior of the circuit is confirmed by HSPICE simulations in a 0.35-${\mu}{\textrm}{m}$ CMOS process. We expect the macro model can be utilized to develope the core architecture and the peripheral circuitry. It can also be used for the characterization and the direction of the real MTJ cells.

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