• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.895-899
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• 2011

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

• Journal of Sensor Science and Technology
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• v.24 no.4
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• pp.219-223
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• 2015

Indium free consisting of three alternating layers GTO/Ag/GTO has been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting electrodes and the structural, electrical and optical properties of the gallium tin oxide (GTO) films were carefully studied. The gallium tin oxide thin films deposited at room temperature are found to have an amorphous structure. Hall Effect measurements show a strong influence on the conductivity type where it changed from n-type to p-type at $700^{\circ}C$. GTO/Ag/GTO multilayer structured electrode with a few nm of Ag layer embedded is fabricated and show the optical transmittance of 86.48% in the visible range (${\lambda}$ = 380~770 nm) and quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$. The resultant power conversion efficiency of 2.60% of the multilayer based OPV (GAG) is lower than that of the reference commercial ITO. GTO/Ag/GTO multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.78-87
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• 2001

The friction and wear behaviors of WC/C multilayer coating were investigated by using a pin on disk type tester. The experiment was conducted by using silicon nitride (S $i_{3}$ $N_{4}$) as a pin material and WC/C multilayer coating on bearing steel (STB2) as a disk material, under various environments that are atmospheric conditions of high vacuum( 1,3$\times$10$^{-4}$ Pa), medium vacuum( 1.3$\times$10$^{-l}$Pa). ambient air( 10$^{5}$ pa)(3 types) and relative humidity(2~98%) conditions. The results showed that WC/C coating fracture was suddenly increased with increasing degree of vacuum, because of high adhesion. So, WC/C coating could not be displayed their ability as solid lubricant. WC/C coating could be displayed better abilitv as solid lubricant with increasing relative humidity. because of oxide film, size and shape of wear debris. The friction coefficient and specific wear rate became better about RH 50%.%.

• Analytical Science and Technology
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• v.8 no.4
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• pp.591-596
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• 1995

Enzyme multilayers composed of avidin and biotin-labeled enzymes were prepared on the surface of electrode, through a strong affinity between avidin and biotin (binding constant: ca $10^{15} M^{-1}$). The enzyme multilayers were useful for the improvement of the performance characteristies of enzyme sensors. The output current of the enzyme sensors depended linearly on the number of enzyme layers deposited. Thus, lactate oxidase (LOx) and alcohol oxidase (AlOx) were deposited after being modified with biotin for constructing enzyme sensors sensitive to L-lactate and ethanol respectively. It was also possible to deposit two different kinds of enzymes successively in a single multilayer. The glucose oxidase (GOx) and ascorbate oxidase (AsOx) were built into a multilayer structure on a Platinum electrode. The GOx, AsOx multilayer-modified electrode was useful for the elimination of ascorbic acid interference of the glucose sensor.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.76-82
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• 2000

PTC thermistors with multilayer structure were fabricated by internal electrode bonding technique in order to realize low resistance. MLPTC (Multilayer Positive Temperature Coefficient) possess various features, such as small size, low resistivity and large current. We describe the effect of additives on the PTC characteristics, voltage - current characteristics, temperature dependence of resistance and complex impedance spectra as a function of frequency range 100 Hz to 13MHz to determine grain boundary resistance. It was found that MLPTC thermistor has both highly nonlinear effects of temperature dependent resistance and voltage dependent current behaviors, which act as passive element with self-repair mechanisms. Decrease of room temperature resistance with increasing the number of layers was demonstrated to be a grain boundary effect. Switching characteristics of current were caused by heat capacity of PTC thermistor with multilayer structure. Switching times are lengthened by increasing the number of layers.

• Journal of Sensor Science and Technology
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• v.22 no.2
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• pp.105-110
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• 2013

We fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 ${\mu}m$) showed a subs-threshold swing of 3.78 V/dec, a minimum off-current of $10^{-12}$ A, a threshold voltage of 0.41 V, a field effect mobility of $10.86cm^2/Vs$, and an on/off ratio of $9{\times}10^9$. From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.3
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• pp.301-307
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• 2002

A multilayer ceramic chip antenna with helical structure is analyzed to enhance the narrow bandwidth of conventional ceramic chip antennas. The simulations are performed by HFSS to verify the effects of structural parameters on impedance bandwidth. The multilayer ceramic chip antennas consist of a rectangular-parallelepiped ceramic body$({\varepsilon}_r=7.8,\; tan\; {\delta}=0.0043)$ and helical conductor patterns are embedded in the ceramic body using LTCC-MLC technology. 3D structure design of the multilayer ceramic chip antenna suitable for IMT-2000 (1,920~2,170 MHz) handset has been implemented, and experimental results are presented and discussed.

• Journal of the Institute of Convergence Signal Processing
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• v.9 no.3
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• pp.238-244
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• 2008

Dynamic neural networks have been applied to diverse fields requiring temporal signal processing. This paper presents gamma neural network(GAM) to improve the dynamics of multilayer network. The GAM network uses the gamma memory kernel in the hidden layer of feedforword multilayer network. The GAM network is evaluated in linear and nonlinear system identification, and compared with feedforword(FNN) and recurrent neural networks(RNN) for the relative comparison of its performance. Experimental results show that the GAM network performs better with respect to the convergence and accuracy, indicating that it can be a more effective network than conventional multilayer networks in system identification.

• Journal of Industrial Technology
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• v.25 no.A
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• pp.157-162
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• 2005

In this study, the fabrication of PZT films was performed from a multilayer structure comprising $TiO_2$, $ZrO_2$ and PbO thin films prepared by rapid themal chemical vapor deposition(RTMOCVD). $TiO_2$, $ZrO_2$ and PbO are the component layers of oxide multilayer system for a single phase PZT thin film. The composition control of PZT thin film was done by the thickness control of individual component layer. The composition ratio of Pb:Ti:Zr with thickness were 1:0.94:0.55. Occurrence of a single-phase of PZT was initiated at around $550^{\circ}C$ and almost completed at $750^{\circ}C$ under the fixed time of 1hr. As the concentration of Pb increased, the roughness and crystallization in the film increased. From the as result of using XPS and TEM, the single phase formation through annealing is evident. The electrical properites of the prepared PZT thin film(Zr/Ti=40/60, 300 nm) on a Pt-coated substrate were as follow: dielectric constant ${\varepsilon}_r=475$, coercive field Ec=320 kV/cm, and remanant polarization $P_r=11{\mu}C/cm^2$ at an applied voltage of 18 V.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1794-1796
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• 2000

Oxides of the form $Mn_{3}O_4$-$Co_{3}O_4$-NiO present properties that make them useful as multilayer chip NTC thermistor for mobile communication telephone. When $Mn_{2}Ni_{x}CO_{1-x}O_4$ composition with the X = 0.12$\sim$0.24 at sintered temperature 1250$^{\circ}C$, resistivity and B-constant were 300$\sim$450[${\Omega}-cm$] and 3250$\sim$3450, respectively. Multilayer chip NTC(Negative Temperature Coefficient) resistor were fabricated with 4 layer by a conventional multilayer capacitor techniques, using 100 pd paste as internal electrode and $Mn_{2}Ni_{0.20}CO_{0.8}O_4$ composition as NTC materials. In particular, resistance change ratio (${\Delta}R$), the important factor for reliability, varied within $\pm$3%, indicating the compositions of multilayer chip NTC thermistor products could be available for mobile communication telephone.