• Proceedings of the KIEE Conference
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• 2003.07a
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• pp.160-162
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• 2003

Recently, power system has a trend of sustaining increase of power demand and large-sized system. Also, consumers has required a high reliability for the power quality in deregulated power industry. For power system operator, the accurate decision for situations of power systems and the ability of the management for the faults are required. Therefore, in this paper we presents the development of simulator which can train the process of the recovery and the decision of contingency in the case of the occurrence of faults for generation, transmission, and distribution facilities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.361-364
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• 2004

Surface doped SOI RESURF LDMOSFET with recessed source region is proposed to improve the on- and off-state characteristics. Surface region of the proposed LDMOS structure is doped like step. The characteristics of the proposed LDMOS is verified by two-dimensional process simulator ATHENA and device simulator ATLAS[1]. The numerically calculated on-resistance($R_{ON}$) of the proposed LDMOS is $10.36\Omega-cm$ and breakdown voltage is 205V when $L_{dr}=7{\mu}m$ with step doped surface.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.5 no.4
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• pp.47-63
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• 1994

An important parameter in characterizing mobile communication channel is delay spread. This paper presents the results of measured delay profiles and calculated distribution funcations of delay spread for typical cellular service environments at Taejon and vicinities. The measurement system uses 1023 chip length, 5 Mbps PN code and sliding correlation method. It has been evaluated by using commercial hardware channel simulator for reliability of out data. As results the value of mean delay spread is 2.08 $\mu\textrm{s}$for suburban area. 2.12 $\mu\textrm{s}$ for urban area and 1.3 $\mu\textrm{s}$ for national/local road. Delay spread is less then 3.4$\mu\textrm{s}$, 2.8$\mu\textrm{s}$ and 1.5 $\mu\textrm{s}$ for probability of 50% and 4.5$\mu\textrm{s}$, 4.2$\mu\textrm{s}$ and 2.9$\mu\textrm{s}$ for probability of 90% at each tested site. The difference of delay spread is within 7% between going and returning status along same street. In this experiment, we found delay spread for suburban area is larger than reported foreign test results.

• The Journal of Advanced Prosthodontics
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• v.3 no.1
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• pp.1-9
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• 2011

PURPOSE. This study investigated the strain of implants using a chewing simulator with strain gauges in mandibular implant-supported fixed prostheses under various dynamic loads. MATERIALS AND METHODS. Three implant-supported 5-unit fixed prostheses were fabricated with three different occlusion types (Group I: Canine protected occlusion, Group II: Unilaterally balanced occlusion, Group III: Bilaterally balanced occlusion). Two strain gauges were attached to each implant abutment. The programmed dynamic loads (0 - 300 N) were applied using a chewing simulator (MTS 858 Mini Bionix II systems, MTS systems corp., Minn, USA) and the strains were monitored. The statistical analyses were performed using the paired t-test and the ANOVA. RESULTS. The mean strain values (MSV) for the working sides were 151.83 ${\mu}{\varepsilon}$, 176.23 ${\mu}{\varepsilon}$, and 131.07 ${\mu}{\varepsilon}$ for Group I, Group II, and Group III, respectively. There was a significant difference between Group II and Group III (P < .05). Also, the MSV for non-working side were 58.29 ${\mu}{\varepsilon}$, 72.64 ${\mu}{\varepsilon}$, and 98.93 ${\mu}{\varepsilon}$ for Group I, Group II, and Group III, respectively. One was significantly different from the others with a 95% confidence interval (P < .05). CONCLUSION. The MSV for the working side of Groups I and II were significantly different from that for the non-working side (Group I: t = 7.58, Group II: t = 6.25). The MSV for the working side of Group II showed significantly larger than that of Group III (P < .01). Lastly, the MSV for the non-working side of Group III showed significantly larger than those of Group I or Group II (P < .01).

• Journal of Digital Convergence
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• v.12 no.7
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• pp.291-296
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• 2014

Inserting a $SiO_2$ layer underneath the p-pad electrode as the current blocking layer (CBL) structure and extending p-metal finger patterns, the GaN LEDs using an indium-tin-oxide (ITO) layer show the improved light output intensity, resulting from better current spreading and reduced light loss on the surface of p-pad metal. The LEDs with an oxide layer of $100{\mu}m$-pad-width and $6{\mu}m$-finger-width have better light output intensities than those with an oxide layer of $105{\mu}m$-pad-width and $12{\mu}m$-finger-width. Using the ATLAS device simulator from Silvaco Corporation, the current density distributions on the active layer in CBL LEDs have been investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.350-350
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• 2010

Silicon carbide (SiC), one of the well known wide band gap semiconductors, shows high thermal conductivities, chemical inertness and breakdown energies. The design of normally-off 4H-SiC VJFETs [1] has been reported and 4H-SiC VJFETs with different lateral JFET channel opening dimensions have been studied [2]. In this work, 4H-SiC based VJFETs has been designed using the device simulator (ATLAS, Silvaco Data System, Inc). We varied the n-epi layer thickness (from $6\;{\mu}m$ to $10\;{\mu}m$) and the channel width (from $0.9\;{\mu}m$ to $1.2\;{\mu}m$), and investigated the static characteristics as blocking voltages, threshold voltages, on-resistances. We have shown that silicon carbide JFET structures of highly intensified blocking voltages with optimized figures of merit can thus be achieved by adjusting the epi layer thickness and channel width.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.751-754
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• 2003

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with pseudomorphic HEMTs. We have studied the calibration on the DC and RF characteristics of the MHEMT device using I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A1$_{0.48}$As modulation-doped heterostructure on the GaAs wafer. For the optimized device performance simulation, we calibrated the device performance of 0.1-${\mu}{\textrm}{m}$ $\Gamma$-gate MHEMT fabricated in our research center using the 2D ISE-DESSIS device simulator. With this calibrated parameter set, we have obtained very good reproducibility. The device simulation on the DC and RF characteristics exhibits good reproducibility for our 0.1-${\mu}{\textrm}{m}$ -gate MHEMT device compared with the measurements. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.ormance.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1587-1588
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• 2006

Tn this paper, PCB (Printed Circuit Board) embedded $BaTiO_3$ MIM capacitors were designed, fabricated, and characterized for low cost organic SOP applications by using 3-D EM simulator and low temperature processes. Size of electrodes and thickness of high dielectric films are optimized for improving the performance characteristics of the proposed embedded MIM capacitors at high frequency regime. The selected thicknesses of the $BaTiO_3$ film are $12{\mu}m$, $16{\mu}m$, and $20{\mu}m$. The fabricated MIM capacitor with dielectric constant of 30 and thickness of $12{\mu}m$ has capacitance density of $21.5p\;F/mm^2$ at 100MHz, maximum quality factor of 37.4 at 300 MHz, a quality factor of 30.9 at 1GHz, self resonant frequency of 5.4 GHz, respectively. The measured capacitances and quality factors are well matched with 3-D EM simulated ones. These embedded capacitors are promising for SOP based advanced electronic systems with various functionality, low cost, small size and volume.

• Proceedings of the KSR Conference
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• 2006.11b
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• pp.1442-1447
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• 2006

Recently, According to rapid advancements in railway system and IT have enabled manless operation in urban transit system. Futhermore, development countries have been tried to develop unmaned operation system for reliability, safety, efficiency, and some ones already adopted. In this paper, we define system requirements and functionalities, and establish the system scenarios to handle the various accidents/faults in manless operation environment.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.4
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• pp.350-357
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• 2016

In this paper, a small mu-zero zeroth order resonance(ZOR) antenna based on meta structure is proposed using parasitic patch at 5.8 GHz. The mu-zero ZOR antenna is designed by utilizing the resonance of series inductance and capacitance of mu-negative transmission line and its size can be further reduced by a simple parasitic patch. The parasitic patch can increase series capacitance of mu-negative transmission line related to a resonant frequency. We have simulated and optimized dimension of the parasitic patch using Ansys commercial simulator(HFSS). As a result, the antenna has the following characteristics: kr of 0.59, efficiency of 92 %, and gain of 6.57 dBi. Also, its size is reduced by 24 % compared to a conventional mu-zero ZOR antenna. The measured results are in good agreement with the simulated results.