• Journal of IKEEE
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• v.6 no.1 s.10
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• pp.21-29
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• 2002

This paper describes a high resolution DLL(Delay Locked Loop) using all digital circuits. The proposed architecture is based on the three stage of coarse, fine and ultra fine phase tuning block which has a phase detector, selection block and delay line respectively. The first stage, the ultra fine phase tuning block, is tune to accomplish high resolution using a vernier delay line. The second and third stage, the coarse and fine tuning block, are tuning the phase margin of Unit Delay using the delay line and are similar to each other. It was simulated in 0.35um CMOS technology under 3.3V supply using HSPICE simulator. The simulation result shows the phase resolution can be down to lops with the operating range of 250MHz to 800MHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.6
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• pp.1269-1276
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• 2005

In this paper, Mixer using the direct-conversion method intended to use in front-end of a RF receiver is designed. The direct conversion Mixer is an alternative wireless receiver architecture to the well-established superheterodyne, particularly for high integration, low power, and low cost. It operates at 2.4GHz band, and is designed and simulated with a 0.35um CMOS technology and HSPICE simulator. Layout is implemented with a Mentor IC Station. The 2.4GHz CMOS Mixer employs a modified single-balanced Gilbert Cell with additional MOSFET in the output stages to improve IIP2, which is a standard of linearity in direct conversion receiver. Additional coversion-stages's transconductances are controlled by each MOSFET's physical properties. The HSPICE simulation results show that the 2.4GHz CMOS Mixer has voltage gam of 29dB, IIP2 of 63dBm, respectively. The Mixer also draws 3.5mA from a 3.3V supply.

• Journal of IKEEE
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• v.18 no.2
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• pp.214-219
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• 2014

In this paper, the usage of tilt-implanted trench Schottky diode(TITSD) based on silicon carbide is proposed. A tilt-implanted trench termination technique modified for SiC is proposed as a method to keep all the potentials confined in the trench insulator when reverse blocking mode is operated. With the side wall doping concentration of $1{\times}10^{19}cm^{-3}$ nitrogen, the termination area of the TITSD is reduced without any sacrifice in breakdown voltage while potential is confined within insulator. When the trench depth is set to 11um and the width is optimized, a breakdown voltage of 2750V is obtained and termination area is 38.7% smaller than that of other devices which use guard rings for the same breakdown voltage. A Sentaurus device simulator is used to analyze the characteristics of the TITSD. The performance of the TITSD is compared to the conventional trench Schottky diode.

• The Journal of Korean Academy of Prosthodontics
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• v.57 no.2
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• pp.110-117
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• 2019

Purpose: This study was to evaluate the wear resistance of 3D printed, milled, and conventionally cured provisional resin materials. Materials and methods: Four types of resin materials made with different methods were examined: Stereolithography apparatus (SLA) 3D printed resin (S3P), digital light processing (DLP) 3D printed resin (D3P), milled resin (MIL), conventionally self-cured resin (CON). In the 3D printed resin specimens, the build orientation and layer thickness were set to $0^{\circ}$ and $100{\mu}m$, respectively. The specimens were tested in a 2-axis chewing simulator with the steatite as the antagonist under thermocycling condition (5 kg, 30,000 cycles, 0.8 Hz, $5^{\circ}C/55^{\circ}C$). Wear losses of the specimens were calculated using CAD software and scanning electron microscope (SEM) was used to investigate wear surface of the specimens. Statistical significance was determined using One-way ANOVA and Dunnett T3 analysis (${\alpha}=.05$). Results: Wear losses of the S3P, D3P, and MIL groups significantly smaller than those of the CON group (P < .05). There was no significant difference among S3P, D3P, and MIL group (P > .05). In the SEM observations, in the S3P and D3P groups, vertical cracks were observed in the sliding direction of the antagonist. In the MIL group, there was an overall uniform wear surface, whereas in the CON group, a distinct wear track and numerous bubbles were observed. Conclusion: Within the limits of this study, provisional resin materials made with 3D printing show adequate wear resistance for applications in dentistry.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.11
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• pp.1-8
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• 2011

One of the most important parameters that limit maximum output power of transistor is breakdown. InAlAs/InGaAs/GaAs Metamorphic HEMTs (MHEMTs) have some advantages, especially for cost, compared with InP-based ones. However, GaAs-based MHEMTs and InP-based HEMTs are limited by lower breakdown voltage for output power even though they have good microwave and millimeter-wave frequency performance with lower minimum noise figure. In this paper, InAlAs/$In_xGa_{1-x}As$/GaAs MHEMTs are simulated and analyzed for breakdown. The parameters affecting breakdown are investigated in the fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs wafer using the hydrodynamic transport model of a 2D commercial device simulator. The impact ionization and gate field effect in the fabricated device including deep-level traps are analyzed for breakdown. In addition, Indium mole-fraction-dependent impact ionization rates are proposed empirically for $In_{0.52}Al_{0.48}As/In_xGa_{1-x}As$/GaAs MHEMTs.

• Journal of the Korean Society for Nondestructive Testing
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• v.24 no.5
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• pp.508-517
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• 2004

We described a near-field scanning microwave microscope which uses a high-quality dielectric resonator with a tunable screw. The operating frequency is f=4.5 5GHz. The probe tip is mounted in a cylindrical resonant cavity coupled to a dielectric resonator We developed a hybrid tip combining a reduced length of the tapered part with a small apex. In order to understand the function of the probe, we fabricated three different tips using a conventional chemical etching technique and observed three different NSMM images for patterened Cr films on glass substrates. We measured the reflection coefficient of different metal thin film samples with the same thickness of 300m and compared with theoretical impedance respectly. By tuning the tunable screw coming through the top cover, we could improve sensitivity, signal-to-noise ratio, and spatial resolution to better than $1{\mu}m$. To demonstrate the ability of local microwave characterization, the surface resistance of metallic thin films has been mapped.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.1
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• pp.48-61
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• 1989

In this paper, two-dimensional numerical simulation of GaAs MESFFT with 0.7${\mu}m$ gate length is perfomed. Drift-diffusion model which consider that mobility is a function of local electric field, is used. As a discretization method, instead of FDM (finite difference method) and FEM (finite element method), the Control-Volume Formulation (CVF) is used and as a numerical scheme current hybrid scheme or upwind scheme is replaced by power-law scheme which is very approximate to exponential scheme. In the process of numerical analysis, Peclet number which represents the velocity ratio of drift and diffusion, is introduced. And using this concept a current equation which consider numerical scheme at the interface of control volume, is proposed. The I-V characteristics using the model and numerical method has a good agreement with that of previous paper by others. Therefore, it is confined that it may be useful as a simulator for GaAs MESFET. Besides I-V characteristics, the mechanism of both velocity saturation in drift-diffusion model is described from the view of velocity and electric field distribution at the bottom of the channel. In addition, the relationship between the mechanism and position of dipole and drain current, are described.

• Journal of Sensor Science and Technology
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• v.11 no.2
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• pp.84-92
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• 2002

A $32{\times}32$ pixels foveated (linear-polar) structure retina chip with the function of local-light adaptation for edge detection has been designed and fabricated using CMOS technology. Human retina can detect a wide range of light intensity. In this study, we use the biologically-inspired visual signal processing mechanism that consists of photoreceptors, horizontal cells, and bipolar cells in order to implement the function of edge detection in the retina chip. For a local-light adaptive function, the size of receptive field is changed locally according to the input light intensity. The spatial distribution of sensing pixels in the foveated retina chip has the advantages of selective reduction of image data and good resolution in central part to carry out the elaborate image processing with still enough resolution in the outer parts. The designed chip has been fabricated using standard $0.6\;{\mu}m$ double-poly triple-metal CMOS technology and optimized using HSPICE simulator.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.4
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• pp.1-7
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• 2017

Cobalt silicide was used as a counter electrode in order to confirm its reliability in dye-sensitized solar cell (DSSC) devices. 100 nm-Co/300 nm-Si/quartz was formed by an evaporator and cobalt silicide was formed by vacuum heat treatment at $700^{\circ}C$ for 60 min to form approximately 350 nm-CoSi. This process was followed by etching in $80^{\circ}C$-30% $H_2SO_4$ to remove the cobalt residue on the cobalt silicide surface. Also, for the comparison against Pt, we prepared a 100 nm-Pt/glass counter electrode. Cobalt silicide was used for the counter electrode in order to confirm its reliability in DSSC devices and maintained for 0, 168, 336, 504, 672, and 840 hours at $80^{\circ}C$. The photovoltaic properties of the DSSCs employing cobalt silicide were confirmed by using a simulator and potentiostat. Cyclic-voltammetry, field emission scanning electron microscopy, focused ion beam scanning electron microscopy, and energy dispersive spectrometry analyses were used to confirm the catalytic activity, microstructure, and composition, respectively. The energy conversion efficiency (ECE) as a function of time and ECE of the DSSC with Pt and CoSi counter electrodes were maintained for 504 hours. However, after 672 hours, the ECEs decreased to a half of their initial values. The results of the catalytic activity analysis showed that the catalytic activities of the Pt and CoSi counter electrodes decreased to 64% and 57% of their initial values, respectively(after 840 hours). The microstructure analysis showed that the CoSi layer improved the durability in the electrolyte, but because the stress concentrates on the contact surface between the lower quartz substrate and the CoSi layer, cracks are formed locally and flaking occurs. Thus, deterioration occurs due to the residual stress built up during the silicidation of the CoSi counter electrode, so it is necessary to take measures against these residual stresses, in order to ensure the reliability of the electrode.

• Proceedings of the Korea Inteligent Information System Society Conference
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• 2000.04a
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• pp.357-364
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• 2000

기존의 웹 디자인은 웹이라는 매체의 특성 상 디자인적인 요소가 매우 중요함에도 불구하고 디자인은 위한 구체적인 방법론이 미약하다. 특히, 많은 소비자들을 유인하고 구매를 촉발시켜야 하는 인터넷 쇼핑몰의 경우에는 더욱 더 그럼하에도 불구하고 이를 위한 전략적인 방법론이 부족하다. 즉, 기존 연구들은 제품의 다양성, 서비스, 촉진, 항해량, 편리성, 사용자 인터페이스 등이 중요하다고 하였지만 실제 인터넷 쇼핑몰을 디자인하는 입장에서는 활용하기가 상당히 애매하다. 그 이유는 이들 요인들은 서로 영향관계를 가지고 있어서 사용자 인터페이스가 복잡하면 항해량이 늘어나 편리성이 감소하고, 제품이 늘어나더라도 검색엔진을 사용하면 상대적으로 항해량이 감소하게 되어 편리성이 증가한다. 따라서, 이들 요인을 활용하여 인터넷 쇼핑몰을 구축하려면 요인간의 영향관계를 면밀히 파악하고 이 영향요인이 소비자의 구매행동에 어떠한 영향을 주는지가 충분히 검토되어야 한다.이에 본 연구에서는 퍼지인식도를 이용하여 인터넷 쇼핑몰 상에서 소비자의 구매행동에 영향을 주는 요인을 추출하고 이들 요인간의 인과관계를 도출하여 보다 구체적이고 전략적으로 인터넷 쇼핑몰을 디자인할 수 있는 방법으로 web-Cogmulator를 제시한다. Web-Cogmulator는 소비자의 쇼핑몰에 대한 암묵지식 형태의 구매행동을 형태지식화하여 지식베이스 형태로 가지고 있기 때문에 인터넷 쇼핑몰의 다양한 요인의 변화에 따른 소비자의 구매행동을 추론 시뮬레이션하는 것이 가능하다. 이에 본 연구에서는 기본적인 인터넷 쇼핑몰 시나리오를 바탕으로 추론 시뮬레이션을 실시하여 Web-Cogmulator의 유용성을 검증하였다.를, 지지도(support), 신뢰도(confidence), 리프트(lift), 컨빅션(conviction)등의 관계를 통해 다양한 방법으로 모색해본다. 이 연구에서 제안하는 이러한 개념계층상의 흥미로운 부분의 탐색은, 전자 상거래에서의 CRM(Customer Relationship Management)나 틈새시장(niche market) 마케팅 등에 적용가능하리라 여겨진다.선의 효과가 나타났다. 표본기업들을 훈련과 시험용으로 구분하여 분석한 결과는 전체적으로 재무/비재무적 지표를 고려한 인공신경망기법의 예측적중률이 높은 것으로 나타났다. 즉, 로지스틱회귀 분석의 재무적 지표모형은 훈련, 시험용이 84.45%, 85.10%인 반면, 재무/비재무적 지표모형은 84.45%, 85.08%로서 거의 동일한 예측적중률을 가졌으나 인공신경망기법 분석에서는 재무적 지표모형이 92.23%, 85.10%인 반면, 재무/비재무적 지표모형에서는 91.12%, 88.06%로서 향상된 예측적중률을 나타내었다.ting LMS according to increasing the step-size parameter $\mu$ in the experimentally computed. learning curve. Also we find that convergence speed of proposed algorithm is increased by (B+1) time proportional to B which B is the number of recycled data buffer without complexity of computati