• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.52-55
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• 2004

In this paper, we examined channel charge which occurs in electron accumulation after electron velocity saturation. Generally, short gate GaAs MESFET show, saturated electron velocity leading to current salutation. When electron velocity is saturated, deletion layer is stil open channel and it play a key role in deciding saturation current mode we proposed channel charge model in channel after electron velocity saturation.