• Journal of Aquaculture
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• v.17 no.2
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• pp.115-121
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• 2004

In a series of feeding experiments using the newly established the first laboratory strain of a temperate photosynthetic ciliate, Mesodinium rubrum MR-MAL01, direct evidence was obtained for ingestion of the cultured M. rubrum cells by the bivalves like the Korean scallop, Chlamys farreri and Manila clam. Ruditapes phil-ippinarum. Each experimental Korean scallop and Manila clam removed up to 9,590 and 23,200 cells min-1, respectively. Small particles almost identical to the ruptured cells of MR-MAL01 culture were observed in the gut of the experimental bivalves, although no intact M. rubrum cell was found. In a 28 days rearing experiment, Isoshrysis galbana (KMCC H-2), a microalga, supported better growth of small Manila clam spat (0.46 mm in shell length) than MR-MAL01 strain. For the large Manila clam spat (0.84 mm in shell length), however. MR-MAL01 strain was a better prey item. Mass culture methods for this photosynthetic marine ciliate may be developed for use as live feed in aquaculture of the spat and broodstock of bivalve and small-mouthed fish larvae.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.29-33
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• 2007

최근의 반도체/display 관련 생산장비 및 검사장비들이 대형화/고속화 되어감에 따라 과거 stepping 방식에서 scanning 방식으로 전환된 장비들이 공정 상에 발생하는 과도응답 형태의 진동으로 인하여 제품 수율의 저하와 생산 효율의 감소를 가져오고 있다. 이러한 과도응답의 진동은 장비 자체의 가진력으로부터 발생하므로 건물 구조의 동강성 증대 방안이나 고효율의 방진 시스템 적용으로는 한계를 가지고 있다. 본 논문에서는 smart 재료인 MR유체를 이용한 MR damper를 이용하여 방진효율을 유지하면서 과도응답의 진동을 제어하기 위한 반 능동제어 방식의 방진/제진 시스템을 구성하였으며, 시스템 해석과 제어 시스템의 구성을 위하여 6자유도 강체 진동에 대한 운동방정식을 고려하였다.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1060-1065
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• 1996

We have studied the magnetoresistance phenomena on spin valve thin films of antiferromagnetic NiO/CoO. Interlayer coupling oscillates between the antiferrocoupling and ferrocoupling with the variation of Cu thickness. The exchange coupling strength between NiO (antiferromagnetic) and NiFe(ferromagnetic) as a function of NiO texture and interface roughness is investigated by CoO insertion. CoO has significantly higher anisotropy in the (111) plane and interface roughness. It seems that the MR-ratio is increased by CoO inserted films. From the AFM and XRD data, the increase of MR-ratio and exchange field is influenced by the roughness of CoO.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.21 no.6
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• pp.597-605
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• 2008

The feasibility study of a newly proposed smart base isolation system employing magneto-rheological elastomers(MREs) has been carried out. MREs belong to a class of smart materials whose elastic modulus or stiffness can be adjusted by varying the magnitude of the magnetic field. The base isolation systems are considered as one of the most effective devices for vibration mitigation of civil engineering structures such as bridges and buildings in the event of earthquakes. The proposed base isolation system strives to enhance the performance of the conventional base isolation system by improving the robustness of the system wide stiffness range controllable of MREs, which improves the adaptability and helps in better vibration control. To validate the effectiveness of the MRE-based isolation system, an extensive numerical simulation study has been performed using both single-story and five-story building structures employing base isolated devices under several historical earthquake excitations. The results show that the proposed system outperformed the conventional system in reducing the responses of the structure in all the seismic excitations considered in the study.

• Composites Research
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• v.17 no.2
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• pp.41-48
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• 2004

"Phenolic composite", one of safety composites was chosen to build rolling stock in England while it was applied to building materials in London Underground facilities. This paper was written by Mr. Denver E. Brown. He emphasizes, from visibility and toxicity points of view, phenolic is the best and Mr. Forsdyke says, there is no question, passenger's lives are No. 1 issue, material recycling is not No.1! not No.1!

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.216-219
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• 2011

Perovskite manganites such as $RE_{1-x}A_xMnO_3$ (RE = rare earth, A = Ca, Sr, Ba) have been the subject of intense research in the last few years, ever since the discovery that these systems demonstrate colossal magnetoresistance (CMR). The CMR is usually explained with the double-exchange (DE) mechanism, and CMR materials have potential applications for magnetic switching, recording devices, and more. However, the intrinsic CMR effect is usually found under the conditions of a magnetic field of several Teslas and a narrow temperature range near the Curie temperature ($T_c$). This magnetic field and temperature range make practical applications impossible. Recently, another type of MR, called the low-field magnetoresistance(LFMR), has also been a research focus. This MR is typically found in polycrystalline half-metallic ferromagnets, and is associated with the spin-dependent charge transport across grain boundaries. Composites with compositions $La_{0.7}(Ca_{1-x}Sr_x)_{0.3}MnO_3)]_{0.99}/(BaTiO_3)_{0.01}$ $[(LCSMO)_{0.99}/(BTO)_{0.01}]$were prepared with different Sr doping levels x by a standard ceramic technique, and their electrical transport and magnetoresistance (MR) properties were investigated. The structure and morphology of the composites were studied by X-ray diffraction (XRD) and scanning electronic microscopy (SEM). BTO peaks could not be found in the XRD pattern because the amount of BTO in the composites was too small. As the content of x decreased, the crystal structure changed from orthorhombic to rhombohedral. This change can be explained by the fact that the crystal structure of pure LCMO is orthorhombic and the crystal structure of pure LSMO is rhombohedral. The SEM results indicate that LCSMO and BTO coexist in the composites and BTO mostly segregates at the grain boundaries of LCSMO, which are in accordance with the results of the magnetic measurements. The resistivity of all the composites was measured in the range of 90-400K at 0T, 0.5T magnetic field. The result indicates that the MR of the composites increases systematically as the Ca concentration increases, although the transition temperature $T_c$ shifts to a lower range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.88-93
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• 2024

To evaluate the possibility as a multi-level memory medium for the Ge₂Sb₂Te₅/TiN/W-doped Ge₂Sb₂Te₅ cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge₂Sb₂Te₅ and W-doped Ge₂Sb₂Te₅ thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto-multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.121-125
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• 2009

Amorphous $Ge_1$_$_xMn_x$ semiconductor thin films grown by low temperature vapor deposition were annealed at various temperatures from 400 to $700^{\circ}C$ for 3 minutes in high vaccum chamber. The electrical and magnetotransport properties of as-grown and annealed samples have been studied. X-ray diffraction patterns analysis revealed that the samples still maintain amorphous state after annealling at $500^{\circ}C$ for 3 minutes and they were crystallized when annealing temperature increase to $600^{\circ}C$. Temperature dependence of resistivity measurement implied that as-grown and annealed $Ge_1$_$_xMn_x$ films have semiconductor characteristics, the increase of resistivity with annealling temperature was obseved. The $700^{\circ}C$-annealed sample exhibited negative magnetoresistance (MR) at low temperatures and the MR ratio was ${\sim}$8.5% at 10 K. The asymmetry was present in all MR curves. The anomalous Hall Effect was also observed at 250 K.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.371-372
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• 2008