• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.9
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• pp.43-49
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• 1997

The dependence of the electrical properties in planar MQW - APD & pn, and p - i - n photodiode implanted with oxygen on the annealing emperatures and ion dose has been investigated. The oxygen implantation was performed for inter-device isolation. The leakage current of as-impanted p-i-n photodiode obtained was less than 50 nA. An annelaing temperature dependence study shows an abrupt increase of leakge current at 600.deg.C for all devices under study. This indicates that donor complex centers introduced by the chemical activity of oxygen increase with increasing annelaing temperatures. Furthermore, leakage current was highly correlated with oxygen dose due to th eimplanted related defects.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.120-129
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• 1995

A new nethod, namely multi-gain-levering, is proposed to improve FM response of the single frequency semiconductor lasers and applied to 1.55$\mu\textrm{m}$ InGaAsP/InP MGL(multi-gain-levered)-MQW-DFB-LD. This device consists of three sections with different bandgap energy and can be easily realized by selective MOVPE growth. Our analysis based on Green function showed that a flat, red-shifted, high FM efficiency of aove 15GHz/mA can be extected by novel gain-levering scheme.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.321-326
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• 2013

The effect of rapid thermal annealing (RTA) on the optical properties of digital-alloy InGaAlAs multiple quantum well (MQW) structures have been investigated by using photoluminescence (PL) and time-resolved PL measurements as a function of RTA temperature. The MQW samples were annealed from $700^{\circ}C$ to $850^{\circ}C$ for 30 s in a nitrogen atmosphere. The MQW sample annealed at $750^{\circ}C$ exhibited the strongest PL intensity and the narrowest FWHM (Full width at half maximum), indicating the reduced nonradiative recombination centers and the improved interfaces between the wells and barriers. The MQW samples annealed at $800^{\circ}C$ and $850^{\circ}C$ showed the decreased PL intensities and blueshifted PL peaks compared to $750^{\circ}C$-annealed sample. The blueshift of PL peak with increasing RTA temperatures are ascribed to the increase of aluminum due to intermixing of gallium (Ga) and aluminum (Al) in the interfaces of InGaAs/InAlAs short-period superlattices. The decrease of PL intensity after annealing at $800^{\circ}C$ and $850^{\circ}C$ are attributed to the interface roughening and lateral composition modulation caused by the interdiffusion of Ga and Al and indium segregation, respectively. With increasing RTA temperature the PL decay becomes slower, indicating the decrease of nonradiative defect centers. The optical properties of digital-alloy InGaAlAs MQW structures can be improved significantly with optimum RTA conditions.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.11-17
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• 2000

We investigated the growth of InGaN/GaN multiple quantum wells (MQWs) structures which emit blue light. The samples were grown in a low pressure metalorganic chemical vapor deposition system. We examined InGaN/GaN MQWs by varying growth temperatures and thicknesses of InGaN well and GaN barrier layers in MQWs. Especially, the thickness of GaN barrier in InGaN/GaN MQWs was found to severely affect the interfacial abruptness between InGaN well and GaN barrier layers. The higher order satellite peaks in the high resolution x-ray diffraction spectra and the high resolution cross sectional transmission electron microscope image of MQW structrues revealed that the interface between InGaN and GaN layers was very abrupt. Room-temperature photoluminescence spectra also showed a blue emission from InGaN/GaN MQWs at the wavelength of 463.5nm with a narrow full width at half maximum of 72.6meV.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.98-99
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• 2002

대표적인 II-VI족 극성 반도체 결정인 ZnTe[001]와 ZnCdTe MQW에서 시료의 에너지 띠보다 낮은 에너지의 펨토초 티타늄 사파이어 레이저를 이용하여 결맞는 포논을 발생시키고 그 특성을 관찰하였다. 결맞는 포논의 신호는 그림1)과 같이 반사 및 투과형 전기 광학적 샘플링(Reflective/Transmissive Electro-Optic Sampling： REOS/TEOS)방법과 여기-탐사광 방법으로 시간 영역에서 측정하였다. (중략)

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.105-109
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• 2003

Electrical properties of Ni/Au/p-GaN and optical properties of epitaxial GaN MQW LED on sapphire were characterized. At 20 mA forward bias, GaN MQW emitted in the blue at 470 nm. Current-voltage (I-V) characteristics were decreased linearly with the annealing temperature. The resistivity of Ni/Au contacts was found by TLM measurements to be of device quality (2×10/sup -1/Ωㆍcm).

• Journal of the Optical Society of Korea
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• v.5 no.4
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• pp.123-130
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• 2001

In this paper, we report measurement of absorption coefficient for various InGaAs MQW QCSE device structures. The absorption spectra over a range of QCSE were obtained from measured photocurrent spectra. The refractive index changes with applied electric field were calculated from the absorption spectra.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.12-13
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• 2003

광 솔리톤은 고속, 장거리 광통신시스템에서 분산과 self-phase modulation(SPM)에 의한 문제를 해결하기 위한 효과적인 기술 중의 하나이다. 현재, 솔리톤 전송은 장거리 해저 광전송시스템 뿐만 아니라 중거리 및 근거리 고속 전송시스템에서도 적용하기 위한 연구가 집중되고 있다. 특히, 솔리톤 전송은 광전중계기 없이 장거리 전송이 가능한 장점으로 인하여 기존의 중, 단거리링크를 초고속링크로 업그레이드하기 위하여 많은 연구가 진행되고 있다. (중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.347-348
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• 2013

To obtain high conversion efficiency in InGaN-based solar cells, it is critical to grow high indium (In) composed InGaN layer for increasing sun light absorption wavelength rage. At present, most InGaN-based solar cells adopt InGaN/GaN multi-quantum-well (MQW) structure for high crystalline quality of InGaN with high In composition. In this study, we fabricated and compared the performances of two types of InGaN/GaN MQW solar cells which have the 15% (SC 15) and 25% (SC 25) of In composition at quantum well layer. Although both devices showed similar dark current density and leakage current, SC 15 showed better performance under AM 1.5G illumination as shown in Fig. 1. It is interesting to note that SC 25 showed severe current density decrease as increasing voltages. As a result, it lowered short circuit current density and fill factor of the device. However, SC 15 showed steady current density and over 75 % of fill factor. To investigate these differencesmore clearly, we analyzed their photoluminescence (PL) spectra under various applied voltages as shown in Fig. 2. At the same time, photocurrent, which was generated by PL excitation, was also measured as shown in Fig. 3. Further, we investigated the relationship between piezoelectric field and performance of InGaN based solar cell varying indium composition.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.313-320
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• 2013

The $AlAs_xSb_{1-x}$ step-graded buffer (SGB) layer was grown on the Silicon (Si) substrate to overcome lattice mismatch between Si substrate and $Al_{0.3}Ga_{0.7}As$/GaAs multiple quantum wells (MQWs). The value of root-mean-square (RMS) surface roughness for 5 nm-thick GaAs grown on $AlAs_xSb_{1-x}$ step-graded buffer layer was ~1.7 nm. $Al_{0.3}Ga_{0.7}As$/GaAs MQWs with AlAs/GaAs short period superlattice (SPS) were formed on the $AlAs_xSb_{1-x}$/Si substrate. Photoluminescence (PL) peak at 10 K for the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure showed relatively low intensity at ~813 nm. The RMS surface roughness of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure was ~42.9 nm. The crystal defects were observed on the cross-sectional transmission electron microscope (TEM) images of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure. The decrease of PL intensity and increase of RMS surface roughness would be due to the formation of the crystal defects.