• Title/Summary/Keyword: MOCVD dust

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Fabrication of High Purity Ga-containing Solution using MOCVD dust (유기금속화학증착 분진(MOCVD dust)을 이용한 갈륨 함유 고순도 수용액 제조 연구)

  • Lee, Duk-Hee;Yoon, Jin-Ho;Park, Kyung-Soo;Hong, Myung-Hwan;Lee, Chan-Gi;Park, Jeung-Jin
    • Resources Recycling
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    • v.24 no.4
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    • pp.50-55
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    • 2015
  • In this study, we have investigated solvent extraction of Ga and recovery of high pure Ga solution from MOCVD dust for manufacturing of LED chip. Effect of extractan, concentration of extractant were examined for choosing the more effective extractant and high pure Ga solution was fabricated by multi-stage extraction/stripping process. For extraction/separation of Ga based on the analysis of raw-material in previous study, 3 different extractants PC 99A, DP-8R, Cyanex 272 has been investigated and the extraction efficiency of 1.5 M Cyanex 272 was 43.8%. It was conformed that extraction efficiency of Ga was 83% in multi-stage extraction and 5N high purity Ga stripping solution without impurities also obtained.

Leaching behavior of Ga and In from MOCVD dust (MOCVD 더스트로부터 Ga과 In의 침출 거동)

  • Park, Kyung-Soo;Swain, Basudev;Kang, Lee Seung;Lee, Chan Gi;Hong, Hyun Seon;Shim, Jong-Gil;Park, Jeung-Jin
    • Journal of Powder Materials
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    • v.21 no.3
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    • pp.202-206
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    • 2014
  • Leaching of MOCVD dust in the LED industry is an essential stage for hydro-metallurgical recovery of pure Ga and In. To recover Ga and In, the leaching behavior of MOCVD scrap of an LED, which contains significant amounts of Ga, In, Al and Fe in various phases, has been investigated. The leaching process must be performed effectively to maximize recovery of Ga and In metals using the most efficient lixiviant. Crystalline structure and metallic composition of the raw MOCVD dust were analyzed prior to digestion. Subsequently, various mineral acids were tested to comprehensively study and optimize the leaching parameters such as acidity, pulp density, temperature and time. The most effective leaching of Ga and In was observed for a boiling 4 M HCl solution vigorously stirred at 400 rpm. Phase transformation of GaN into gallium oxide by heat treatment also improved the leaching efficiency of Ga. Subsequently high purity Ga and In can be recovered by series of hydro processes.

Selective Solvent Extraction of In from Synthesis Solution of MOCVD Dust using D2EHPA (MOCVD 더스트 합성용액으로부터 D2EHPA를 이용한 In의 선택적 용매추출)

  • Im, Byoungyong;Swain, Basudev;Lee, Chan Gi;Park, Jae Layng;Park, Kyung-Soo;Shim, Jong-Gil;Park, Jeung-Jin
    • Resources Recycling
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    • v.24 no.5
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    • pp.80-86
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    • 2015
  • The separation of In from the synthesis solution with Ga, Fe, and Al has been studied by the solvent extraction using D2EHPA as an extractant. The effects as a function of the concentration of extractant and HCl on the extraction of In were investigated. The extraction of In and Ga increased with decreasing HCl concentration, but that of Fe and Al was independent. Separation factor between In and Ga of 115 was obtained at 1.0 M D2EHPA in the presence of 0.5 M HCl of feed solution. Consequently, this study shows that D2EHPA is suitable extractant for In extraction from the synthesis solution. Extraction efficiency and separation factor could be increased by controlling HCl and extractant concentration.