• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.19-20
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• 1995

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.13 no.5
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• pp.143-148
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• 2013

A novel ultracompact polarization beam-splitter (PBS) combining two plasmonic multimode interference couplers (P-MMICs) and DFB guiding structure is implemented. The $2{\times}1$ and $1{\times}2$ P-MMICs are designed to collect the polarized powers of TE and TM modes reflected by or transmitted through an internal DFB structure. The simulation results show that the designed DFB-assisted PBS is very short (about $75{\mu}m$), and has a low insertion loss, a high extinction ratio, and a broad bandwidth of 20 nm.

• Nuclear industry
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• v.30 no.3
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• pp.72-78
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• 2010

KEPCO는 APR1000 원전을 개발 중에 있다. APR1000은 2루프 1000MWe급의 가압경수로로, 국내에 운영중이고 건설중인 검증된 OPR1000 설계를 기반으로 하고 있다. APR1000은 원전 수요자의 요구에 응하기 위해 안전성, 신뢰성 및 경제성을 설계에 고려하여 개발 중에 있다. APR1000의 대표적인 설계 특성으로는 60년 수명, 0.3g 내진 설계, MMICs, 저온 덮개 원자로(Cold Head Reactor), 안전 주입 탱크 내의 피동형 유량 조절 장치 등이 있다. 본고에서는 APR1000의 설계 요건과 안전 관련 설게 특징을 소개하고자 한다.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.104-108
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• 2000

In this paper, we characterized a novel MEMS package using high resistivity silicon for microwave and millimeter-wave devices. The manufactured MEMS package shows -20dB of S$\sub$11/ and -0.4dB of S$\sub$21/ up to 200GHz. The new package can be a low cost and high performance solution due to process compatibility with on-chip devices and very small and precise dimensions by semiconduotor technology.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.12
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• pp.1083-1090
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• 2015

We designed and manufactured Ka-band SSPA include drive amplifier and high power amplifier MMICs by $0.15{\mu}m$ GaN commercial process. Also, we fabricated main components micro-strip line to WR28 waveguide transition and WR28 wave guide power combiner for Ka-band SSPA. This Ka-band SSPA shows saturated output power 44.2 dBm, power added efficiency 16.6 % and power gain 39.2 dB at 29~31 GHz frequency band.

• Journal of information and communication convergence engineering
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• v.1 no.3
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• pp.129-132
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• 2003

In this paper, cobalt (Co)-electrode FBAR devices fabricated on seven-layered Bragg Reflectors are presented along with their resonance characteristics. ZnO films are used as the resonating material in FBAR devices where the Co electrode is 3000${\AA}$ thick. All processes are preformed in an RF magnetron sputtering system. As a result of characterization, the resonance characteristics are observed to depend strongly on the quality of ZnO film and Bragg Reflectors. In addition, the FBAR devices with W/$SiO_2$ reflectors show good resonance characteristics in term of return loss and quality-factor (Q-factor).

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.39-44
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• 2005

A broadband DC to 40 GHz 5-bit MMIC digital attenuator has been developed. The ultra broadband attenuator has been achieved by newly inserted the transmission lines in conventional Switched-T attenuator and the optimization of the transmission line parameters. Momentum was employed in design for an accurate performance prediction at high frequencies and Monte Carlo analysis was applied to verify performance stability against the MMIC process variation. The attenuator has been fabricated with 0.15 $\mu$m GaAs pHEMT process. This attenuator has 1 dB resolution and 23 dB dynamic range. High attenuation accuracy has been achieved over all attenuation range and full 40 GHz bandwidth with the reference state insertion loss of less than 6 dB at 20 GHz. The input and output return losses of the attenuator are better than 14 dB over all attenuation states and frequencies.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.34-40
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• 1998

For applicating to 10-Gbit/s optical transimission systems, we have designed and fabricated a laser driver IC with extremely-high-operation-frequencies using AlGaAs/GaAs heterojunction bipolar transistors (HBTs), and have investigated its performances. Circuits design andsimulation were performed using SPICE and LIBRA. A discrete AlGaAs/GaAs HBT with the emitter area of 1.5*10 .mu.m$^{2}$, used for the circuit fabrication, exhibited cutoff frequency of 63 GHz andmaximum osciallation frquency of 50 GHZ. After fabrication of MMICs, we observed the very wide bandwidth of DC~18 GHz and the S$_{21}$ gain of 17 dB for a laser driver IC from the on-wafer measurement. Metal-packaged laser driver IC showed the excellent eye opening, the modulation currents of 32 mA, the rise/fall time of 40 ps, measured at the data rates of 10-Gbit/s.

• Journal of Satellite, Information and Communications
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• v.3 no.1
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• pp.1-7
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• 2008

This Paper studied the design and measured results of a flight model for Ku-Band Linearized Channel Amplifier (LCAMP) for communication satellite onboard system. All MMICs, i.e. Variable Gain Amplifier (VGA), Variable Voltage Attenuator (VVA) with analog/digital attenuator, Branch line Hybrid Coupler and Detector for Pre-distorter are fabricated using Thin-Film Hybrid process. The performance of the fabricated module is verified through Radio Frequency circuit simulations and electrical function test in space environment for flight model at 12.25 to 12.75 GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.245-248
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• 1997

The dielectric resonators(DRs) with dielectric properties are widely used in microwave integrated circuit(MICs) and monolithic microwave integrated circuits(MMICS). The variational method as numerical simulation scheme would be applied to calculate the resonant frequencies(fr) and Q-factors of microwave dielectric resonators. The dielectric resonator with a cylindrical “puck” structure of high dielectric material is modeled in this simulation. The parameters, such as the diameter, the height, and the dielectric constant of dielectric resonator, would determine the resonant frequency and the Q-factor. The relationship between these parameters would effect each other to evaluate the approximate resonant frequency. This simulation method by the variational formula is very effective to calculate fr, and Q-factor. in high frequency microwave dielectric resonator The error rate of the simulation results and the measured results would be considered to design the microwave dielectric resonators.