• Title/Summary/Keyword: MIS5c

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Clinical features, diagnosis, and outcomes of multisystem inflammatory syndrome in children associated with coronavirus disease 2019

  • Kwak, Ji Hee;Lee, Soo-Young;Choi, Jong-Woon;Korean Society of Kawasaki Diseasety of Pediatric Endocrinology (KSPE),
    • Clinical and Experimental Pediatrics
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    • v.64 no.2
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    • pp.68-75
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    • 2021
  • The novel coronavirus disease 2019 (COVID-19) caused by severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) infection has been spreading worldwide since December 2019. Hundreds of cases of children and adolescents with Kawasaki disease (KD)-like hyperinflammatory illness have been reported in Europe and the United States during the peak of the COVID-19 pandemic with or without shock and cardiac dysfunction. These patients tested positive for the polymerase chain reaction or antibody test for SARS-CoV-2 or had a history of recent exposure to COVID-19. Clinicians managing such patients coined new terms for this new illness, such as COVID-19-associated hyperinflammatory response syndrome, pediatric inflammatory multisystem syndrome temporally associated with COVID-19, or COVID-19-associated multisystem inflammatory syndrome in children (MIS-C). The pathogenesis of MIS-C is unclear; however, it appears similar to that of cytokine storm syndrome. MIS-C shows clinical features similar to KD, but differences between them exist with respect to age, sex, and racial distributions and proportions of patients with shock or cardiac dysfunction. Recommended treatments for MIS-C include intravenous immunoglobulin, corticosteroids, and inotropic or vasopressor support. For refractory patients, monoclonal antibody to interleukin-6 receptor (tocilizumab), interleukin-1 receptor antagonist (anakinra), or monoclonal antibody to tumor necrosis factor (infliximab) may be recommended. Patients with coronary aneurysms require aspirin or anticoagulant therapy. The prognosis of MIS-C seemed favorable without sequelae in most patients despite a reported mortality rate of approximately 1.5%.

Temperature Dependence on Electrical Characterization of Epitaxially Grown AIN film on 6H-SiC Structures (6H-SiC 위에 형성한 에피택시 AIN 박막 구조에 대한 전기적 특성의 평가온도 의존성)

  • Kim Yong-Seong;Kim Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.1
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    • pp.18-22
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    • 2006
  • Epitaxial aluminum nitride films on 6H-SiC (0001) were fabricated using reactive RF magnetron sputtering and post-deposition rapid thermal annealing. The electrical properties of AIN films depending on film thickness and measurement temperature have been observed. Full width at half maximum of AIN (0002) was $0.1204^{\circ}$ (about 430 arcsec) X-ray rocking curve results. The equivalent oxide thickness (EOT) of AIN film was estimated as about 10 nm and the leakage current density was within the order of $10^{-8} 4/cm^2$. The dielectric constant of AIN film estimated from the accumulation region of C-V curve measured at $300^{\circ}C$ was 8.3. The dynamic dielectric constant was obtained as 5.1 from J vs. 1/T plots at the temperature ranging from R.T. to $300^{\circ}C$ From above, estimation temperature dependance of the electrical properties of Al/AIN/SiC MIS devices was affirmed and useful data compilation for the reliabilities of SiC MIS is expected.

Fabrication and Properties of AIN/SiC Structures using Reactive RF Magnetron Sputtering Method (반응성 RF 마그네트론 스퍼터링 법을 이용한 AIN/SiC 구조의 제작 및 특성)

  • Kim, Yong-Seong;Kim, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.11
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    • pp.977-982
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    • 2005
  • Al/AlN/n-type 6H-SiC (0001) MIS structures were prepared by AlN layers on vicinal 6H-SiC(0001) substrates with reactive RF magnetron sputtering method. The AlN films were annealed at $900^{\circ}C$, $N_2$ atmosphere lot 1 minutes showed the best result. With XRD analysis, AlN(0002) peak was clearly found. The typical dielectric constant value of the AlN film in the MIS capacitors was obtained as 8.4 from photo C-V. Also, the gate leakage current density of the MlS capacitor was $10^{-10}\;A/cm^2$ order within the electric field of 1.8 MV/cm. Finally, the amount of interface trap densities, $D_{it}$, was evaluated as $5.3\times10^{10}\;eV^{-1}cm^{-2}$ at (Ec-0.85) eV.

Efficiency Improvement of Al-MIS Solar Cell Using Texturization (Texturization을 이용한 Al-MIS 태양 전지의 효율 개선)

  • Kim, Jin-Seop;Lee, U-Il;Kim, Gi-Wan;Jeong, Ho-Seon
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.19 no.5
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    • pp.26-31
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    • 1982
  • Texturization technique has been employed to improve the efficiency of Al-MIS solar cells. The best condition for the formation of insulating layer was 50$0^{\circ}C$ in N2 ambient for 20 minutes, and the appropriate thickness of the Al barrier metal layer was about 100$\AA$ For the texturization of the face a mixture of hydrazinehydrate and pyrocathecol was used. The efficiency improvement of the texturized cells ranged from 1.2 to 1.6% under 100mW/$\textrm{cm}^2$ illumination.

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Electrical characteristics of carbon nitride capacitor for micro-humidity sensors (마이크로 습도센서를 위한 질화탄소막 캐패시터의 전기적 특성)

  • Kim, Sung-Yeop;Lee, Ji-Gong;Chang, Choong-Won;Lee, Sung-Pil
    • Journal of Sensor Science and Technology
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    • v.16 no.2
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    • pp.97-103
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    • 2007
  • Crystallized carbon nitride film that has many stable physical and/or chemical properties has been expected potentially by a new electrical material. However, one of the most significant problems degrading the quality of carbon nitride films is an existence of N-H and C-H bonds from the deposition environment. The possibility of these reactions with hydroxyl group in carbon nitride films, caused by a hydrogen attack, was suggested and proved in our previous reports that this undesired effect could be applied for fabricating micro-humidity sensors. In this study, MIS capacitor and MIM capacitor with $5{\mu}m{\times}5{\mu}m$ meshes were fabricated. As an insulator, carbon nitride film was deposited on a $Si_{3}N_{4}/SiO_{2}/Si$ substrate using reactive magnetron sputtering system, and its dielectric constant, C-V characteristics and humidity sensing properties were investigated. The fabricated humidity sensors showed a linearity in the humidity range of 0 %RH to 80 %RH. These results reveal that MIS and MIM $CN_{X}$ capacitive humidity sensors can be used for Si based micro-humidity sensors.

진하-기장 지역의 해안단구분포와 단구변위 단층징후

  • ;Yoko Ota;Dorothy Merritts
    • Proceedings of the KSEEG Conference
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    • 2003.04a
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    • pp.131-134
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    • 2003
  • 계기지진기록에 의하면, 한반도에서는 중국이나 일본만큼 지진발생빈도가 높거나 강진은 없으나, 북한에서는 추가령단층대 이서지역, 남한에서는 아산만~영일만 일원을 따라 대상으로 분포한다. 역사지진기록에 의하면, 경주시 주변에서 8개의 큰 지진이 일어났으며, 이중 779년에 일어난 경주지진에서는 백명 이상의 사상자가 발생한 기록이 있다고 하였다(경재복, 1997). (중략)

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The Examination of the Limitations of Using the OSL Dates Derived from this Study in the Correlation of MIS 5 Marine Terraces Distributed in the Southeastern Coast of the Korean Peninsula (한반도 남동부 해안 해성단구의 분류와 편년에 있어서 본 연구에서 도출된 OSL 연대 적용의 한계성 검토)

  • Choi, Seong Gil;Tamura, Toshikazu;Miyauchi, Takahiro;Tsukamoto, Sumiko
    • Journal of The Geomorphological Association of Korea
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    • v.25 no.4
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    • pp.63-75
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    • 2018
  • The lower marine terrace 1 and 2 surfaces distributed between Ulsan and Pohang coast in the southeastern coast of the Korean penninsula have been correlated with MIS 5e and 5a (or 5c) by amino acid dates, 14C dates, wide-spread tephra correlation and pollen analysis respectively. In this study, to test the reliability of the OSL method for the estimation of the numerical burial age of marine sediment deposits, we analyzed the samples from the marine terraces which have been known as typical marine terraces formed during MIS 5e and MIS 5a in the above-mentioned coast. The burial ages of the marine deposit of the lower marine terrace 1 and 2, with paleoshoreline altitudes of 18m to 19m and 10m to 11m respectively, both showed about the same age of 60 ka BP. The lower marine terraces 1 and 2, however, were divided into two terrace surfaces by a clear terrace cliff. Besides, the OSL dates of the lower and upper parts of the lower marine terrace 2 of the Bonggil coast showed the reversed burial ages. In the lower marine terrace 1 of the Sanhari coast, almost the same burial ages were derived from both the lower part (marine rounded gravel layer) and the upper part (terrestrial angular gravel layer) of the terrace deposit. Therefore, at the present time, judging from only the OSL dates measured in this study, it could be argued that the OSL method is not the best for the estimation of forming periods of the lower marine terraces 1 and 2 and their classification.

Effects of hydrogen gas addition on insulator thin film of Al/AlN/GaAs MIS system fabricated by sputtering method (스퍼터링법으로 저작한 Al/AlN/GaAs MIS 구조에서 절연박막에 수소가스첨가가 미치는 영향)

  • Kwon, Jung-Youl;Kim, Min-Suk;Kim, Jee-Gyun;Lee, Hwan-Chul;Lee, Heon-Yong
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1925-1927
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    • 1999
  • At the study, it has fabricated Al/AlN/GaAs MIS capacitor using DC reactive sputtering method. To applicate GaAs semiconductor in a MIS devices, investigated capability of AIN thin film by the insulator layer. Also it has investigated inversion of C-V characteristics by addition of the hydrogen(hydrogen concentration: 5%) and it has investigated that leakage current has $10^{-8}A/cm^2$ for 1 MV/cm breakdown electric field of I-V characteristics.

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A Marine Terrace Correlated to MIS 5e on the Basis of Pollen Analysis at Sanha-Dong, Ulsan, Southeastern Coast of the Korean Peninsula (화분분석에 의한 한국 남동부 해안 산하동 일대의 MIS 5e 대비 해성단구 동정)

  • Choi, Seong Gil;Shin, Hyeoncho;Park, Ji Hoon
    • Journal of The Geomorphological Association of Korea
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    • v.24 no.3
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    • pp.1-11
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    • 2017
  • The pollen analysis on the deposits of the lower marine terrace I of the estimated paleoshoreline height of 18m was performed in order to estimate the formation age of this terrace developed at the Sanha-dong coast, Ulsan, southeastern coast of the Korean peninsula. The pollen assemblage of the peat layer of SH-1 pollen zone (Quercus-Ulmus/Zelkova zone), lying directly on the marine rounded pebble layer of this terrace, shows that the climatic environment of the deposition period of SH-1 pollen zone was almost similar to that of the Postglacial climatic optimum period, but slightly cooler than that of the late warm stage of Last Interglacial(MIS 5a) in the eastern coast of Korea. This heightens the possibility that the deposition period of the marine rounded pebble layer which was covered by the above SH-1 peat layer is the MIS 5e which has been estimated by a previous study of the sedimentary facies of this terrace deposits (Choi, 2016). The pollen assemblage of SH-2 pollen zone (Pinus-Quercus zone) shows that the climate of this period was almost similar to that of the late Postglacial, but slightly cooler than that of the period of SH-1 pollen zone. This means that the climate around the Sanha-dong was still warmer in the deposition period of the peat layer of SH-2 pollen zone. Thus, the peat layer of SH-2 pollen zone was considered to have been deposited during the period from the early regression stage of the MIS 5d which is the estimated final stage in the deposition period of the above peat layer of SH-1 pollen zone to any stage in which the warmer environment of MIS 5 has still lasted. The humic silt layer of SH-3 pollen zone (Pinus-Ulmus/Zelkova-Abies zone) is assumed to have been deposited during the interstadial of the Last Glacial (MIS 3).

Electrical Characteristic of Al/AIN/GaAs MIS Capacitor fabricated by Reactive Sputtering Method for the DC power (반응성 스퍼터링법으로 Al/AIN/GaAs MIS 커패시터 제조시 DC 전력에 따른 전기적 특성)

  • 권정열;이헌용;김지균;김병호;김유경
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.566-569
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    • 2001
  • In this paper, we investigated the electrical characteristics through DC power at manufacturing the MIS capacitor insulator AIN thin film based on reactive sputtering method. In case of deposition temperature 250$^{\circ}C$, pressure 5mTorr, total flow rate 8sccm(Ar:4sccm N2:4sccm), AIN thin film was deposited with changing DC power. As DC power increses, resistivity is observed a little increase. When AIN thin film is deposited at 100W, the result shows leakage current 10$\^$-8/A/$\textrm{cm}^2$ at 0.1MV/cm. Otherwise, In case of depositing at 150W and 200W, the result shows that the characteristic of leakage current is under 10$\^$-9//$\textrm{cm}^2$ at 0.1MV/cm. In C-V characteristic with DC power, deep depletion phenomenon is observed at inversion region in 100W and 150W. In 200W, that phenomenon, however, was showed to decrease. It shows that the hysterisis increases with being increasing DC power.

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