• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 추계학술대회 논문집
• /
• pp.105-108
• /
• 1998

Pt-WO$_3$-Si$_3$N$_4$-SiO$_2$-Si-Al 캐패시터를 이용한 NO$_2$ 가스 센서를 개발하였다. 표준 실리콘 MNOS구조에 촉매 게이트로 Pt와 가스 흡착층으로 WO$_3$를 이용함으로서 전통적인 세라믹 가스 센서보다 낮은 온도에서 NO$_2$ 가스를 감지할 수 있었다. 은도 변화와 NO$_2$ 가스 농도의 변화에 따라서 디바이스의 NO$_2$ 가스 감도를 조사하였다. Pt-WO$_3$ 계면에서 NO$_2$ 이온농도의 변화에 기초로 한 가스 감지 모델을 제시하였다. 제시된 가스 감지 모델을 계면에서의 가스 반응 속도론에 의하여 분석함으로서 확인하였다.

• 전기학회논문지
• /
• 제60권3호
• /
• pp.577-583
• /
• 2011

In AC-PDP, it is necessary to achieve high luminance efficiency, high luminance and high definition by adopting technologies such as high xenon concentration and long gap. However, it is very difficult to apply above technologies because they make many problems such as mis-discharge and high driving voltage. Especially, the reactive power of PDP must be reduced for satisfaction in international standard IEC62087. In this paper, we proposed CLHS driving method which is half sustain driver without energy recovery capacitor. In the experimental results, CLHS driving method reduced reactive power consumption about 10%. Also, CLHS driving method improved the luminance efficiency in all discharge loads. Therefor, the more the discharge load decreases, the more the luminance efficiency improves. When the discharge load is 20%, CLHS driving method improved 5.35%.

• E2M - 전기 전자와 첨단 소재
• /
• 제4권1호
• /
• pp.38-44
• /
• 1991

본 연구는 전기로에 의한 열 산화법에 의해 SiO$_{2}$(88[.angs.])와 ONO(89[.angs.])를 성장시켜 MIS capacitor를 제작한 후, 초 박막 유전체/실리콘 계면에서 전자파 간섭 효과를 실험적으로 비교 검토한 것이다. EWIE현상의 결과로서 첫째. 저 전계영역에 비해 고 전계영역에서 우세하며 둘째. SiO$_{2}$에 비해 ONO가 약하게 나타난다. 그러므로 ONO가 SiO$_{2}$보다 열 전송자 효과에 대한 저항성이 우수함을 알 수 있고 ULSI급의 게이트 절연막으로서의 실용가능성을 확인하였다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
• /
• pp.1085-1088
• /
• 2003

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its I-V and C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/Oxidized porous silicon/porous silicon/Silicon/Al, where the silicon substrate is etched anisotropically to be prepared into a membrane shape. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator- semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

• 한국전기전자재료학회논문지
• /
• 제22권4호
• /
• pp.350-354
• /
• 2009

$Al_{2}O_{3}$ thin films were deposited on GaN(0001) by using a Remote Plasma Atomic Layer Deposition(RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of $25{\sim}500^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from $1.8{\AA}$/cycle at $25^{\circ}C$ to $0.8{\AA}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_{2}O_{3}$ thin films was studied using X-ray photoelectron spectroscopy(XPS). The electrical properties of $Al_{2}O_{3}$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a $300^{\circ}C$ process temperature were excellent, a low electrical leakage current density(${\sim}10^{-10}A/cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7.2 with a thinner oxide thickness of 12 nm. The interface trap density($D_{it}$) was estimated using a high-frequency C-V method measured at $300^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_{2}O_{3}$ as a Sate dielectric in GaN-based devices.

• 한국전자통신학회논문지
• /
• 제11권5호
• /
• pp.473-478
• /
• 2016

본 논문은 RTP법으로 산화막을 질화시킨 질화산화막으로 MIS 커패시터를 제작하여 avalanche 주입에 따른 캐리어 트랩 특성을 조사하였다. avalanche 주입에 의한 flatband 전압 변화는 두 번의 turn-around가 관찰되었는데 이는 처음 산화막에서 전자 트래핑이 있어나고, 전하 주입에 따라 홀 트래핑에 의한 turn-around 후 다시 전자 트래핑이 일어나는 것을 관찰하였다. 질화 산화막의 캐리어 트랩 파라미터를 결정하기 위하여 실험 결과를 기초로 종류가 다른 여러 트랩을 갖는 계에 대한 캐리어 트래핑을 비교한 결과 실험값과 일치함을 확인하였다.

• 한국전기전자재료학회논문지
• /
• 제16권12S호
• /
• pp.1232-1236
• /
• 2003

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/oxidized PS/PS/P-Si/Al, where the p-Si is etched anisotropically to be prepared into a membrane-shape. We used alcohol gases vaporized from different alcohol (or ethanol) solutions mixed with pure water at 36$^{\circ}C$, similarly with an alcohol breath measurement to check drunk driving. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator-semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.247-248
• /
• 2006

Carbon nitride films were evaluated that they had many advantages for miniature micro-humidity-sensors using the standard CMOS technology humidity sensing properties and CV characteristics of the carbon nitride films have been investigated for fabricating one chip HUSFET(Humidity Sensitive Field Effect Transistor) humidity sensors Carbon nitride films were deposited on silicon substrate with meshed electrodes by reactive RF magnetron sputtering system. The capacitor-type humidity sensor revealed good humidity-impedance characteristics with a wide range of relative humidity changes, decreasing $254k{\Omega}$ to $16k{\Omega}$ according to increase of relative humidity between 5% ~ 95% and the films were very stable on the Si wafer. These results reveal that $CN_x$ thin films can be used for Si based or HUSFET structure one chip micro-humidity sensors.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
• /
• pp.915-918
• /
• 2007

We have grown $SiO_2$ film on a polycrystalline Si layer using excited ozone gas, which is produced by ultra-violet light irradiation to ozone gas, without heating substrate. The obtained $SiO_2$ film shows dielectric properties comparable to the device quality films measured at the MIS capacitor configuration.

• 한국철도학회:학술대회논문집
• /
• 한국철도학회 2003년도 춘계학술대회 논문집
• /
• pp.493-498
• /
• 2003

Harmonic current originating from electric locomotives can be magnified due to the impedance characteristics of power supply circuit and bring about various problems. That is, electromagnetic interference with communication lines, operational trouble in signaling, overheat and/or vibration in power capacitor, mis-operation in protection relay and so on. Therefore, the exact assessment of the harmonic current flow must be undertaken at design and planning stage for the electric traction systems. For these reasons, this study propose a new approach to model and to analyse traction power feeding system focused on system response to current and voltage harmonic(PART I ). Measurements of harmonics are also performed for railway power supply systems under normal operation. Spectrum and distortion analyses in measurement data are variously described in PART II