• Title/Summary/Keyword: MIS 3

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Properties of Deposits and Geomorphic Formative Ages on Marine Terraces in Gwangyang Bay, South Sea of Korea (광양만 일대 해안단구의 퇴적물 특성과 지형 형성시기)

  • Lee Gwang-Ryul;Park Chung-Sun
    • Journal of the Korean Geographical Society
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    • v.41 no.3 s.114
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    • pp.346-360
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    • 2006
  • In order to analyze synthetically geomorphological processes of marine terrace in Korea, this study deals with the distribution of marine terraces, stratification of sedimentary layers, physicochemical properties of deposits, and formative ages of marine terraces based on OSL(Optically Stimulated Luminescence) absolute age at coastal area of Gwangyang Bay in central part of the South Coast. As a result of comparison with physicochemical properties on diverse geomorphic materials, there is not enough distinction in them, because of recycling and mixing of materials at Gwangyang Bay having a geomorphic closure. In Gwangyang bay coast, marine terraces are discovered at least 3 levels and have a small area. Formative age of 1st Terrace, as the lowest level ranging in $10{\sim}13m$ above the sea level, is estimated at MIS(Marine Isotope Oxygen Stage) 5a, based on OSL age dating and properties of deposits. Uplifting rate is calculated at 0.141m/ka in Gwangyang bay coast. For application to this rate, 2nd terrace($18{\sim}22m$) is estimated at MIS 5e, 3rd terrace($27{\sim}32m$) is latter part of MIS 7. Consequently, we might conclude that uplifting and geomorphic process of marine terrace in South Coast is similar to East Coast during the Late Pleistocene in Korea.

Fabrication and Electrical Properties of Al2O3/GaN MIS Structures using Remote Plasma Atomic Layer Deposition (원격 플라즈마 원자층 증착법을 이용한 Al2O3/GaN MIS 구조의 제작 및 전기적 특성)

  • Yun, Hyeong-Seon;Kim, Hyun-Jun;Lee, Woo-Seok;Kwak, No-Won;Kim, Ka-Lam;Kim, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.4
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    • pp.350-354
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    • 2009
  • $Al_{2}O_{3}$ thin films were deposited on GaN(0001) by using a Remote Plasma Atomic Layer Deposition(RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of $25{\sim}500^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from $1.8{\AA}$/cycle at $25^{\circ}C$ to $0.8{\AA}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_{2}O_{3}$ thin films was studied using X-ray photoelectron spectroscopy(XPS). The electrical properties of $Al_{2}O_{3}$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a $300^{\circ}C$ process temperature were excellent, a low electrical leakage current density(${\sim}10^{-10}A/cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7.2 with a thinner oxide thickness of 12 nm. The interface trap density($D_{it}$) was estimated using a high-frequency C-V method measured at $300^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_{2}O_{3}$ as a Sate dielectric in GaN-based devices.

Plasma Polymerized Styrene for Gate Insulator Application to Pentacene-capacitor (유기박막트랜지스터 응용을 위해 플라즈마 중합된 Styrene 게이트 절연박막)

  • Hwang, M.H.;Son, Y.D.;Woo, I.S.;Basana, B.;Lim, J.S.;Shin, P.K.
    • Journal of the Korean Vacuum Society
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    • v.20 no.5
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    • pp.327-332
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    • 2011
  • Plasma polymerized styrene (ppS) thin films were prepared on ITO coated glass substrates for a MIM (metal-insulator-metal) structure with thermally evaporated Au thin film as metal contact. Also the ppS thin films were applied as organic insulator to a MIS (metal-insulatorsemiconductor) device with thermally evaporated pentacene thin film as organic semiconductor layer. After the I-V and C-V measurements with MIM and MIS structures, the ppS revealed relatively higher dielectric constant of k=3.7 than those of the conventional poly styrene and very low leakage current density of $1{\times}10^{-8}Acm^{-2}$ at electric field strength of $1MVcm^{-1}$. The MIS structure with the ppS dielectric layer showed negligible hysteresis in C-V characteristics. It would be therefore expected that the proposed ppS could be applied as a promising dielectric/insulator to organic thin film transistors, organic memory devices, and flexible organic electronic devices.

Change in Electrical Properties of Al2O3/GaN MIS Structures according to the Thickness of Al2O3 Thin Film and Annealing Temperature (산화알루미늄 박막의 두께 및 열처리 온도에 따른 Al2O3/GaN MIS 구조의 전기적 특성 변화)

  • Kwak, No-Won;Lee, Woo-Seok;Kim, Ka-Lam;Kim, Hyun-Jun;Kim, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.6
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    • pp.470-475
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    • 2009
  • We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.

$Al/Al_2O_3/Si$(100) Solar Cell 제작 및 특성 평가

  • Min, Gwan-Hong;Yu, Jeong-Jae;Yeon, Je-Min;;Jeong, Sang-Hyeon;Kim, Gwang-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.313.2-313.2
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    • 2013
  • 본 연구에서는 기존에 연구된 Solar Cell 보다 구조 및 제작이 단순한 $Al/Al_2O_3/Si$(100) Solar cell을 제작하여 평가하였다. 기판으로는 p-type Si(100), 0.5~2 ${\Omega}{\cdot}cm$을 사용하여 chemical cleaning 후 ALD(Atom Layer Deposition)법으로 Al2O3 터널링 절연막을 증착하였으며, 박막의 두께를 1~10 nm로 변화시켜 MIS 커패시터의 터널링 효과를 평가하였다. MIS 커패시터의 전기적 특성평가를 위해 누설전류 밀도-전계 특성은 pA meter/DC Voltage source를 사용하였고, 커패시턴스-전압특성, D-factor 특성은 precision LCR meter를 사용하였다. $Al/Al_2O_3/Si$(100) Solar cell의 특성평가를 위해 300~1100nm 파장영역에 따른 양자 효율을 평가하기 위해 Quantum Efficiency system (QE)을 사용하였고, Stanard Test Conditions 100 $mW/cm^2$, AM1.5, $25^{\circ}C$ 조건의 Voc, Isc, Jsc, FF (Fill Factor) 및 Efficiency(%)를 평가하기 위해 Solar simulator를 이용하였다.

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A Case of Multisystem Inflammatory Syndrome in Children (MIS-C) with Acute Myocarditis

  • Lim, Jin Gyu;Lee, Da Hye;Oh, Kyung Jin;Choi, Sujin;Song, Young Hwan;Lee, Joowon;Lee, Hyunju
    • Pediatric Infection and Vaccine
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    • v.28 no.3
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    • pp.173-180
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    • 2021
  • After initial reports of multisystem inflammatory syndrome in children (MIS-C) in April 2020 in Europe, this disease has been known to occur in children with recent history of coronavirus disease 2019 (COVID-19) and most cases have been reported in Europe and the Unites States of America. We report a case of a 14-year-old girl who was diagnosed with MIS-C with acute myocarditis and successfully treated with intravenous immunoglobulin (IVIG), methylprednisolone, and anakinra. At initial presentation, she had persistent high fever, generalized rash, generalized swelling, abdominal pain, and low blood pressure. She showed a remarkably elevated level of inflammation and cardiac enzyme markers and had a previous history of COVID-19 5 weeks before the initial presentation. After extensive work up, other infectious and non-infectious causes were excluded. She was diagnosed with MIS-C and initially treated with IVIG and high-dose methylprednisolone; however, despite treatment, her heart function deteriorated and coronary artery dilatation progressed. Therefore, anakinra, an interleukin-1 receptor antagonist, was administered on hospital day 6, after which her cardiac function exhibited improvement. She was discharged on hospital day 19 without any symptoms, and follow-up echocardiography after 1 month revealed fully recovered heart function with normal coronary arteries.

Different $CaCO_3$ profiles in cores PC1 and PC2 from the Ulleung Basin in the East Sea (동해 울릉분지에서 채취한 코아 PC1과 PC2의 탄산염 함량 변화 차이와 그 원인)

  • Lee, Jong-Min;Heo, Jin-Bee;Kim, Hyung-Jeek;Khim, Boo-Keun
    • The Korean Journal of Quaternary Research
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    • v.25 no.2
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    • pp.17-24
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    • 2011
  • We investigated the variation of $CaCO_3$ contents in cores PC1 and PC2 recovered from the continental slope area of the Ulleung Basin in the East Sea. $CaCO_3$ contents of cores PC1 and PC2 varied between 0.6 and 17.2% and between 0.3 and 43.0%, respectively. $CaCO_3$ contents in the upper part of core PC1 corresponding to MIS 1 are less than 5%, whereas those in the lower part of MIS 2 are more than 10%. Such variation of $CaCO_3$ contents in core PC1 confirms the previous results of $CaCO_3$ studies in the East Sea. In core PC2, $CaCO_3$ contents of the upper part are similar to those of core PC1. However, $CaCO_3$ contents in the lower part of core PC2 are more than 40%. According to XRD operation and SEM examination, the high $CaCO_3$ contents in the lower part of core PC2 are more attributable to the authigenic carbonate minerals rather than the biogenic carbonate composition. Such abundant authigenic carbonate minerals are closely related to the dissociation of methan hydrates which were observed in the Ulleung Basin.

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Characteristics of Pd-MIS devices on hydrogen gas sensing (Pd-MIS 소자의 수소가스 검지 특성)

  • Yi, Cheal W.;Cha, Won I.;Shin, Chee B.;Yun, Kyung S.;Ju, Jeh B.
    • Transactions of the Korean hydrogen and new energy society
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    • v.3 no.2
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    • pp.17-24
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    • 1992
  • Hydrogen gas sensors were fabricated after the form of metal/insulator/semiconductor(MIS) structure on a p-type silicon wafer and a insulating layer (silicon dioxide) thickness was changed from $500{\AA}$ to $5000{\AA}$. Their electrical properties were investigated with the variation of the hydrogen gas concentration at room temperature. At the applied forward bias of lV to both ends of Pd-MIS sensors the current was decreased logarithmically with the increase of hydrogen concentration in air. In the case of a thin $SiO_2$ layered ($500{\AA}$) sensor the current ratio was decreased to 25 % at 1 % of hydrogen concentration in air and 50% for a thick $SiO_2$ layered ($5000{\AA}$) sensor. And the response time of the thick insulating layered sensor to 1% hydrogen containing air was about 50 seconds and regeneration time was 2.5 minutes. When a 0.5mA current was appied to the thick insulating layered sensor the maximun voltage shift was calculated to 0.8V in the case of ${\theta}$ = 1 and the Pd surface coverage of hydrogen was increased logarithmically with hydrogen partial pressure.

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Properties of Channel and Evolutions of Fluvial Terraces in Odae River (오대천의 특성과 하안단구의 형성과정)

  • Lee, Gwang-Ryul
    • Journal of the Korean Geographical Society
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    • v.44 no.3
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    • pp.224-239
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    • 2009
  • This study analyzes the properties of fluvial landforms in the upper and lower reaches and investigates the evolutions of stream and fluvial terrace in the Odae river basin. The lower basin of the river that consist of sedimentary rocks resistant to weathering and erosion processes shows higher altitude, relief and slope than the upper basin that consist of granite less resistant to weathering and erosion processes. The average width of river valley at the lower reaches is one-third to the upper reaches and the average width of river channel at the lower reaches is narrower than at the upper reaches. Based on the OSL age dating, the fluvial terrace T1 formed at the temperature-rising period during the late MIS 2 and T2 formed at the middle MIS 3, interstadial period during the last glacial period. Based on the these results, the average incision rates of Odae river are calculated as 0.205m/ka and 0.269m/ka at the upper granite area and lower sedimentary rocks area, respectively.

Development of a Seeder Monitoring System (파종기용 파종 감시 장치 개발)

  • 김대호;김경욱
    • Journal of Biosystems Engineering
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    • v.21 no.3
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    • pp.306-314
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    • 1996
  • A seeder monitoring system was developed to solve the problems of mis-sowing and tube clogging in direct seeding machines, which have been one of the factors that reduce the performance of sowing operations. The system consisted of photo sensors, air nozzles, an air compressor, and a one-chip micro-computer based controller. The system was also equipped with the devices that perform the functions of self-checking and intermittent air injection for cleaning seed tubes. The performance of the system was tested in the laboratory and field. Using the well-cleaned rice seed, the average time for checking the mis-sowing was 1.37 seconds in the field and 1.2 seconds in the laboratory without any malfunction. Overall evaluation of the system indicated that the system can be utilized for seeding machines not only for paddies but beans and corns.

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