• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.27-31
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• 2007

The cpapcitors with MIM(metal-insulator-metal) structures using PVP gate insulation films were prepared for the application of flexible organic thin film transistors (OTFT). The co-polymer organic insulation films were synthesized by using PVP(poly-4-vinylphenol) as a solute and PGMEA(propylene glycol monomethyl ether acetate) as a solvent. The cross-linked PVP insulation films were also prepared by addition of poly(melamine-co-formaldehyde) as thermal hardener. The leakage current of the cross- linked PVP films was found to be about 1.3 nA on Al/PES(polyethersulfone) substrate, whereas, on ITO/ glass substrate was about 27.5 nA indicating improvement of the leakage current at Al/PES substrates. Also, the capacitances of all prepared samples on ITO/glass and Al/PES substrates w ere ranged from 1.0 to $1.2nF/cm^2$, showing very similar result with the calculated capacitance values.

• Transactions on Electrical and Electronic Materials
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• v.10 no.5
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• pp.147-151
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• 2009

For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 $\AA$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$. Five PECVD process parameters are designed to lower the refractive index and lower the deposition rate of $Si_3N_4$ films for the high breakdown electric field. For the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the atomic force microscopy (AFM) root mean square (RMS) value of about 2000 $\AA$ $Si_3N_4$ on the bottom metal is lowest at 0.862 nm and the breakdown electric field is highest at about 8.0 MV/cm with a capacitance density of 326.5 pF/$mm^2$. A pretreatment of metal electrodes is proposed, which can reduce the peeling of nitride in the harsh test environment of heat, pressure, and humidity.

• Journal of the Optical Society of Korea
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• v.18 no.3
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• pp.261-273
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• 2014

In this paper, metal insulator metal (MIM) plasmonic slot cavity narrow band-pass filters (NBPFs) are studied. The metal and dielectric of the structures are silver (Ag) and air, respectively. To improve the quality factor and attenuation range, two novel NBPFs based on tapered structures and double cavity systems are proposed and numerically analyzed by using the two-dimensional (2-D) finite difference time domain (FDTD) method. The impact of different parameters on the transmission spectrum is scrutinized. We have shown that increasing the cavities' lengths increases the resonance wavelength in a linear relationship, and also increases the quality factor, and simultaneously the attenuation of the wave transmitted through the cavities. Furthermore, increasing the slope of tapers of the input and output waveguides decreases attenuation of the wave transmitted through the waveguide, but simultaneously decreases the quality factor, hence there should be a trade-off between loss and quality factor. However, the idea of adding tapers to the waveguides' discontinuities of the simple structure helps us to improve the device total performance, such as quality factor for the single cavity and attenuation range for the double cavity. According to the proposed NBPFs, two, three, and four-port power splitters functioning at 1320 nm and novel ultra-compact two-wavelength and triple-wavelength demultiplexers in the range of 1300-1550 nm are proposed and the impacts of different parameters on their performances are numerically investigated. The idea of using tapered waveguides at the structure discontinuities facilitates the design of ultra-compact demultiplexers and splitters.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1519-1521
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• 1997

In this paper, poly (N-(2-4-imidazolyl) ethyl) maleimide-alt-1-octadecene (IMI-O) polymer which can complex metal ion was used to confirm the possibility of molecular device made by Langmuir-Blodgett method. Metal/Insulator/Metal (MIM) device was fabricated for investigation of electric properties. In the ${\pi}$-A isotherm, surface pressure at collapse point was different as to the molecular weight of metal ion complexed respectively, In I-V characteristics, currents of MiM devices were different at the same voltage. It was thought that phenomena was occurred by interaction between function group and metal ion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1016-1022
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• 2001

This study presents the microstructure-electrical property relationship of reactive-sputtered Ta$_2$O$_{5}$ MIM capacitor structure processed by annealing in a vacuum and $O_2$ ambience. A microstructural investigation showed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-Ta$_2$O$_{5}$ in $700^{\circ}C$ annealing. On annealing under the $O_2$ atmosphere, the Ta$_2$O$_{5}$ film exhibited the trend of its composition\`s approaching to stoichiometry from off-stoichiometry, analyzed by EPMA, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. In the case of low temperature vacuum-annealing treatment, the leakage current behavior was stable irrespective of applied electric field. In the high temperature-annealed film at a vacuum condition, the electrical properties was observed to deteriorate. The results state that in Ta$_2$O$_{5}$ film annealed at $O_2$ atmosphere, gives rise to improvement of electrical characteristics in the capacitor were improved by reducing oxygen-vacancy and dandling Ta-O bond.-O bond.

• Current Optics and Photonics
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• v.4 no.5
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• pp.428-433
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• 2020

Recently, the on-chip autofocus (AF) function has become essential to the CMOS image sensor. An auto-focus usually operates using phase detection of the photocurrent difference from a pair of AF pixels that have focused or defocused. However, the phase-detection method requires a pair of AF pixels for comparison of readout. Therefore, the pixel variation may reduce AF performance. In this paper, we propose a color-selective AF pixel with a plasmonic nanostructure in a 0.9 μ㎡ pixel. The suggested AF pixel requires one pixel for AF function. The plasmonic nanostructure uses metal-insulator-metal (MIM) stack arrays instead of a color filter (CF). The color filters are formed at the subwavelength, and they transmit the specific wavelength of light according to the stack period and incident angles. For the optical analysis of the pixel, a finite-difference time-domain (FDTD) simulation was conducted. The analysis showed that the MIM stack arrays in the pixels perform as an AF pixel. As the primary metric of AF performance, the resulting AF contrasts are 1.8 for the red pixels, 1.6 for green, and 1.5 blue. Based on the simulation results, we confirmed the autofocusing performance of the MIM stack arrays.

• Journal of the Optical Society of Korea
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• v.15 no.1
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• pp.82-89
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• 2011

In this paper, we numerically study both band-pass and band-stop plasmonic filters based on Metal-Insulator-Metal (MIM) waveguides and circular ring resonators. The band-pass filter consists of two MIM waveguides coupled to each other by a circular ring resonator. The band-stop filter is made up of an MIM waveguide coupled laterally to a circular ring resonator. The propagating modes of Surface Plasmon Polaritons (SPPs) are studied in these structures. By substituting a portion of the ring core with air, while the outer dimensions of the ring resonator are kept constant, we illustrate the possibility of red-shift in resonant wavelengths in order to tune the resonance modes of the proposed filters. This feature is useful for integrated circuits in which we have limitations on the outer dimensions of the filter structure and it is not possible to enlarge the dimension of the ring resonator to reach to longer resonant wavelengths. The results are obtained by a 2D finite-difference time-domain (FDTD) method. The introduced structures have potential applications in plasmonic integrated circuits and can be simply fabricated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.271-271
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• 2010

$BaTiO_3$(BT) has high permittivity so that has been applied to dielectric and insulator materials in 3D system-level package integration. In order to achieve excellent performance of device, the BT layer should be highly dense. In this study, BT thick films were prepared by the inkjet printing method. And these films were cured at $280^{\circ}C$ after infiltration of polymer resin. As a result, we have successfully fabricated not only the inkjet-printed hybrid BT film but also metal-insulator-metal(MIM) capacitor without sintering process. Changes in the dielectric constant of BT hybrid film with particle size and packing density were investigated. The dielectric constant was increased with increasing packing density and particle size. Further, the BT hybrid film using two different size particles had even higher packing density and dielectric constant.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.953-959
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• 2006

Langmuir-Blodgett(LB)layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/arachidic acid/Al, the number of accumulated layers are $9{\sim}21$. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to +3 V. The insulation property of a thin film is better as the distance between electrodes is larger.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.281-284
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• 1995

A molecular photodiode was fabricated with hetero-Langmuir-Blodgett (LB) film consisting of an electron accepter(A) and sensitizer. N-Allyl-N-[3-propylamido-N\",N\"-야(n-octadecyl)]-4,4-bipyridum Dibromide and 7,8-dimethyl-10-dodecyl isoalloxan-zine were used as A and S units, respectively. By aligning hefter-LB film of A/S units on ITO glass with an aluminium thin film, a molecular photodiode with the structure of Metal/Insulator/Metal(MIM) was constructed. Due to excitation by irradiation with a 460nm monochromatic light source, the photo-induced unidirectional flow of electrons in the MIM device could be achieved and was detected as photocurrents. The direction of energy flow was in accordance with the energy level profile across the LB films. The photo switching function was achieved and the rectifying characteristics was obserbed in the molecular devise.