• Title/Summary/Keyword: M3W

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Influence of Greenhouse Gas Emissions from Commercial Aircraft at Korean International Airports on Radiative Forcing and Temperature Change (국내 대규모 공항의 항공기 온실가스 배출에 따른 복사강제력 및 기온변화 영향 연구)

  • Song, Sang-Keun;Shon, Zang-Ho;Jeong, Ju-Hee
    • Journal of Korean Society for Atmospheric Environment
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    • v.30 no.3
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    • pp.223-232
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    • 2014
  • Monthly variations of radiative forcing (RF) and mean temperature changes by greenhouse gases emitted from commercial aircraft were estimated based on the simplified expression at four international airports (Incheon, Gimpo, Jeju, and Gimhae Airports) during the years of 2009~2010. The highest RF and mean temperature change in the study area occurred at Incheon Airport, whereas the lowest RF and mean temperature change at Gimhae Airport. During 2009~2010, the mean RF and mean temperature change estimated from aircraft $CO_2$ emissions at Incheon Airport were approximately 30.0 $mW/m^2$ and $0.022^{\circ}K$, respectively. The mean RF and mean temperature changes caused by other greenhouse gas $N_2O$ was significantly small (<<0.1 $mW/m^2$ and << $1{\times}10^{-3}^{\circ}K$). Meanwhile, $CH_4$ emissions caused negative mean RF ($-4.45{\times}10^{-3}mW/m^2$ at Incheon Airport) and the decrease of mean temperature ($-3.83{\times}10^{-6}^{\circ}K$) due to consumption of atmospheric $CH_4$ in the aircraft engine.

Effect of Ba Stearate Addition on Magnetic Properties of Ba-system W-type Ferrite Magnets

  • Yamamoto, Hiroshi;Nishio, Hiroaki;Sawayama, Yoshihito
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.1165-1166
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    • 2006
  • An experiment was carried out to investigate the effect of Ba Stearate as a reducing agent on the magnetic and physical properties of anisotropic $BaFe_2-W$ type ferrite magnets. It was found that the magnetic properties of $BaO{\cdot}8.5Fe_2O_3$ were improved by adding 0.3 wt% of Ba Stearate, 0.5 wt% of $SiO_2$, and 0.5 wt% of CaO together. The optimum conditions for making magnets were as follows; semisintering condition: $1350^{\circ}C{\times}4.0$ h in nitrogen gas atmosphere, drying condition: $180^{\circ}C{\times}2.0$ h in air, sintering condition: $1160^{\circ}C{\times}1.5$ h in nitrogen gas atmosphere. Magnetic and physical properties of a typical sample were $J_m$ = 0.46 T, $J_r$ = 0.43 T, $H_{cJ}$ = 182.3 kA/m, $H_{cB}$ = 177.2 kA/m, $(BH)_{max}$ = 33.8 kJ/$m^3$, $T_C$ = $495^{\circ}C$ and $K_A$ = $2.65{\times}10^5\;J/m^3$ and $H_A$ = 1332 kA/m.

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Thermoelectric Properties of the Hot-pressed Bi2(Te0.9Se0.1)3 with Dispersion of Tungsten Powders (텅스텐 분말을 분산시킨 Bi2(Te0.9Se0.1)3 가압소결체의 열전특성)

  • Roh, M.R.;Choi, J.Y.;Oh, T.S.
    • Journal of the Microelectronics and Packaging Society
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    • v.18 no.4
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    • pp.55-61
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    • 2011
  • The n-type $Bi_2(Te_{0.9}Se_{0.1})_3$ powers were fabricated by mechanical alloying, mixed with tungsten(W) powders, and hot-pressed at $550^{\circ}C$ for 30 minutes. Thermoelectric properties of the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$ were characterized as a function of the volume percent of tungsten-powder addition. The power factor of the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$ was $21.9{\times}10^{-4}$ $W/m-K^2$, and was improved to $30.5{\times}10^{-4}$ $W/m-K^2$ by dispersion of 1 vol% W powders. While the dimensionless figure-of-merit of the $Bi_2(Te_{0.9}Se_{0.1})_3$ hot-pressed without dispersion of W powders was measured as 0.52 at room temperature, it became substantially enhanced to 0.95 with addition of 1 vol% W powders.

A 3.3V 30mW 200MHz CMOS upconversion mixer using replica transconductance (복제 V-I 변환기를 이용한 3.3V 30mW 200MHz CMOS 업 컨버젼 믹서)

  • Kwon, Jong-Kee;Kim, Ook;Oh, Chang-Jun;Lee, Jong-Ryul;Song, Won-Chul;Kim, Kyung-Soo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.22 no.9
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    • pp.1941-1948
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    • 1997
  • In this paper, the power efficient linear upconversion mixer which is a functional circuit in transmit path of intermediate frequency(IF) part of Code Division Multiple (CDMA) cellular phone was explained. In generally, the low CMOS devices limits the implementation of upconversion mixer especially for lower loads. Using replica transconductor, the linear range is extended up to the limit. Thiscircuit was imprlemented using $0.8{\mu}\textrm{m}$ N-well CMOS technology with 2-poly/2-metal. The active area of chip is $0.53mm{\times}0.92mm$. The power consumption is 30mW with 3.3V suply voltage. The 1dB conpression characteristics is -27.3dB with $25{\Omega}$. load and being applied by 2-tone input signal. The mixer operates properly above 200MHz.

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Microstructural Development of Ferritic 11Cr-3.45W Heat-resistance Steel for Ultra-supercritical Power Plant During Creep and Thermal Aging (크리프와 등온열화에 따른 초초임계압 발전설비용 페라이트계 11Cr-3.45W 내열합금강의 미세조직 변화)

  • Kim, Chung-Seok
    • Journal of the Korean Society for Heat Treatment
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    • v.31 no.3
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    • pp.91-96
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    • 2018
  • Microstructural development of ferritic 11Cr-3.45W heat-resistance steel for ultra-supercritical power plant during creep and thermal aging was investigated using electron microscopy. The test samples were isothermally aged at $700^{\circ}C$ for up to 4000 hours and subjected to creep loading at $700^{\circ}C$ for predetermined periods of lifetime to prepare the damaged materials. In this structural material, a various secondary phases are the primary influence on mechanical properties of ferritic heat-resistance steel. The typical precipitates of $M_{23}C_6$, MX and $M_2X$ secondary phases had been analyzed through qualitative and quantitative manner. Coarsening of precipitates and increase of lath width were observed during creep and thermal aging. This phenomenon was remarkable for creep process compared with isothermal aging process.

A 512 Bit Mask Programmable ROM using PMOS Technology (PMOS 기술을 이용한 512 Bit Mask Programmable ROM의 설계 및 제작)

  • 신현종;김충기
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.18 no.4
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    • pp.34-42
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    • 1981
  • A 512-bit Task Programmable ROM has been designed and fabricated using PMOS technology. The content of the memory was written through the gate pattern during the fabrication process, and was checked by displaying the output of the chip on an oscilloscope with 512(32$\times$16) matrix points. The operation of the chip was surcessful with operating voltage from -6V to -l2V, The power consumption and propagation delay time have been measured to be 3mW and 13 $\mu$sec, respectively at -6 Volt. The power consunption increased to 27mW and propagation delay time decreased to 3$\mu$sec at -12V. The output of the chip was capable of driving the input of a TTL gate directly and retained a high impedence state when the chip solect function disabled the output.

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Implementation of Euclidean Calculation Circuit with Two-Way Addressing Method for Reed-Solomon Decoder (Reed-Solomon decoder를 위한 Two-way addressing 방식의 Euclid 계산용 회로설계)

  • Ryu, Jee-Ho;Lee, Seung-Jun
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.36C no.6
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    • pp.37-43
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    • 1999
  • Two-way addressing method has been proposed for efficient VLSI implementation of Euclidean calculation circuit for pipelined Reed-Solomon decoder. This new circuit is operating with single clock while exploiting maximum parallelism, and uses register addressing instead of register shifting to minimize the switching power. Logic synthesis shows the circuit with the new scheme takes 3,000 logic gates, which is about 40% reduction from the previous 5,000 gate implementation. Computer simulation also shows the power consumption is about 3mW. The previous implementation with multiple clock consumed about 5mW.

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플라즈마를 이용한 GaAs 반응성 이온 식각

  • Lee, Seong-Hyeon;No, Ho-Seop;Choe, Gyeong-Hun;Park, Ju-Hong;Jo, Gwan-Sik;Lee, Je-Won
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.26.2-26.2
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    • 2009
  • 이 논문은 반응성 $BCl_3$ 플라즈마로 GaAs의 건식 식각을 진행한 후 그 결과에 대하여 연구 분석 한 것이다. 이 때 사용한 식각 공정 변수는 $BCl_3$ 플라즈마에서의 가스유량, 공정 압력과 RIE 척 파워의 변화이다. 먼저 공정 압력을 75 mTorr 고정시킨 후 $BCl_3$ 유량을 변화 (2.5~10 sccm)해서 실험하였다. 또한 BCl3의 유량을 5 sccm으로 고정시킨 후 공정압력을 변화(47~180 mTorr)해서 식각 실험을 실시하였다. 마지막으로 47 mTorr와 100 mTorr 의 각각의 공정압력에서 RF 척 파워를 변화시켜 (50~200 W) 실험하였다. GaAs 플라즈마 식각이 끝난 후 표면단차 측정기 (Surface profiler)를 사용하여 표면의 단차와 거칠기를 분석하였다. 그 후 그 결과를 이용하여 식각율 (Etch rate), 식각 표면 거칠기 (RMS roughness), 식각 선택비 (Selectivity) 등의 식각 특성평가를 하였다. 또한 식각 공정 중에 샘플 척에 발생하는 자기 바이어스와 $BCl_3$ 플라즈마 가스를 광학 발광 분석기 (Optical Emission Spectroscopy)를 이용하여 플라즈마의 상태를 실시간으로 분석하였다. 이 실험 결과에 따르면 공정 압력의 증가는 샘플 척의 자기 바이어스의 값을 감소시켰다. $BCl_3$ 압력 변화에 의한 GaAs의 식각 결과를 정리하면 5 sccm의 $BCl_3$ 가스유량과 RF 척 파워를 100 W로 고정시켰을 때 식각율은 47 mTorr에서 가장 높았으며, 그 값은 $0.42{\mu}m/min$ 이었다. GaAs의 식각 속도는 공정압력이 증가할수록 감소하였으며 180 mTorr에서는 식각율이 $0.03{\mu}m/min$로 거의 식각되지 않았다. 또한 공정압력을 75 mTorr, RF 척 파워를 100 W로 고정시키고, $BCl_3$ 가스유량을 2.5 sccm에서 10 sccm까지 변화시켰을 때, 10 sccm 의 $BCl_3$ 가스유량에서 가장 높은 식각율인 $0.87{\mu}m/min$이 측정되었다. 압력에 따른 GaAs의 식각 후 표면 거칠기는 최대 2 nm 정도로 비교적 매끈하였으며, 거의 식각되지 않은 180mTorr의 조건에서는 약 1 nm로 낮아졌다. 본 실험 조건에서 GaAs의 감광제에 대한 식각 선택비는 최대 약 3:1 이내였다.

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Determination of Verapamil with ISE based on Ion Exchanger (이온교환체 전극을 이용한 베라파밀 정량)

  • Lee, Eun-Yup;Kim, Dong-O;Chang, Seung-Hyun;Hur, Moon-Hye;Ahn, Moon-Kyu
    • YAKHAK HOEJI
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    • v.40 no.2
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    • pp.135-140
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    • 1996
  • Ion-selective poly(vinyl chloride)(PVC) membrane electrodes for the determination of the calcium antagonist verapamil and its pharmaceutical preparations were described. Verapam il-superchrome garnet Y(SGY), lumogallion(LG), acid red 97(AR97), Dragendorff(DD) and Meyer reagent ion pairs were inverstigated as an electroactive compound for membrane electrode. Stable potentiometric response was obtained with azo dye at pH 6.5-4.0 and with DD, and Meyer reagent at pH 6.5-3.0. The best plasticizer was 49w/w% 2-nitrophenyl octyl ether for azo dye, and 65.3w/w% tri(n-butyl) citrate for DD and Meyer reagent. Potentiometric response slopes of optimized membrane electrodes based on SGY, LG, AR97, DD, and Meyer complex for verapamil were 52.49, 54.88, 50.81, 54.13 and 49.31 mV/dec., respectively. Lower limits of linear range were $1.0{\times}10^6M$ for SGY, LG, and AR97, while those for DD and Meyer reagent were $4{\times}10^{-6}M$. Detection limits for all these electrodes were $1{\times}10^{-5}M,\;4{\times}10^{-6}M,\;1.8{\times}10^{-6}M,\;8{\times}10^{-7}M,\;and\;1{\times}10^{-6}M$ with relative standard deviation of 2.56, 3.6, 3.96, 2.56, 3.20%, respectively.

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Finite Element Method Analysis for Temperature Profile of a Planar Multijunction Thermal Converter (유한 요소법에 의한 평면형 다중접합 열전변환기의 온도분포 해석)

  • Hwang, Chan-Soon;Cho, Hyun-Duk;Kwon, Jae-Woo;Lee, Jung-Hee;Lee, Jong-Hyun;Kim, Jin-Sup;Park, Se-Il;Kwon, Sung-Won
    • Journal of Sensor Science and Technology
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    • v.10 no.3
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    • pp.196-206
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    • 2001
  • Real temperature profiles of a planar chromel-alumel mutli-junction thermal converter(TC 1) were measured by thermal image. Temperature profiles as a function of input power of thermal converters(TC 1${\sim}$TC 6) were simulated by 3-dimensional ANSYS program based on finite element method. Temperature difference between the hot junction and the cold junction for TC 1 was smallest and largest for TC 6 and correspondingly, he voltage response for TC 1 and TC 6 showed the smallest value of 3.09 mV/mW and the largest value of 4.03 mV/mW, respectively.

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