• Title/Summary/Keyword: M2M device

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Analysis and Isolation of Walking-type Cultivator Vibration Transmitted to Operator′s Hands (손으로 전달된 관리기 진동의 분석과 방진대책)

  • 박영준;김경욱
    • Journal of Biosystems Engineering
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    • v.27 no.4
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    • pp.273-282
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    • 2002
  • This study was intended to measure and analyze hand-transmitted vibrations from cultivator in idle and operation modes for three different types of field works. Based on this analysis a time for the white finger syndrome to appear on 10% of the operators was estimated assuming that their daily exposure is 3 hours. The 4 methods to reduce the hand vibration were also proposed and compared with each other. The results of the study were summarized as follows : The highest vibration level was recorded during trenching operation, resulting in a total average vibration of 11.5 m/s$^2$. Followings were 7.6 m/s$^2$ during rotary tillage and 7.0 m/s$^2$ for weeding. When exposed to these levels of vibrations three hours a day, the white finger syndrome is likely to appear in 4 years for trenching, 6.2 years for rotary tillage and 6.8 years for weeding operations. Isolation of hand vibration performed by a rubber pad, anti-vibration gloves, a handle anti-vibration device and engine mounts were respectively 15.7%, 16.5%. 26.1% and 27.0%, resulting in most effective methods of the handle anti-vibration device and engine mounts. A better performance of about 33.9% was achieved when both the handle anti-vibration device and engine mounts were used.

Manufacturing and Characteristics Analysis of a Testing Device for the Evaluation of a Distribution Board Management System (분전반 관리시스템 평가를 위한 시험 장치의 제작 및 특성 분석)

  • Ko, Wan Su;Lee, Byung Seol;Choi, Chung Seog
    • Journal of the Korean Society of Safety
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    • v.34 no.5
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    • pp.31-36
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    • 2019
  • This study made a testing device to evaluate the distribution board management system. Power was supplied to the testing device using a loading-back method and the voltage applied to it was 440 V at the same turn ratio. When the human body electric shock current is 30 mA, the breaking time is set to be less than 240 ms while 30~45 mA current is flowing. The test result shows that in the case of the R-phase it was measured to be 5.19 Hz (193 ms). And the S-phase and T-phase were perfectly cut off at 5.39 Hz (186 ms) and 5.71 Hz (175 ms), respectively. When the human body electric shock current is 60mA, the breaking time is set to be less than 120 ms while 45~75 mA current is flowing. The test result shows that the R-phase, S-phase, and T-phase were accurately cut off at 8.39 Hz (11 ms), 8.87Hz (113 ms) and 9.69 Hz (103 ms), respectively. When the human body electric shock current is 90 mA, the breaking time is set to be less than 48 ms while 75 mA current is flowing. The test result shows that the R-phase, S-phase, and T-phase were accurately cut off at 19.8 Hz (50.4 ms), 16.9 Hz (59.2 ms), and 17.9 Hz (56.0 ms), respectively. That is, the developed testing device satisfied all the requirements of the distribution board evaluation criteria, and it becomes available for the performance evaluation of the distribution board management system.

Design of a Thermal Energy Harvesting Circuit With MPPT Control (MPPT 기능을 갖는 열전 에너지 하베스팅 회로)

  • Kim, Su-jin;Park, Kum-young;Yoon, Eun-jung;Oh, Won-seok;Yu, chong-gun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.255-258
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    • 2012
  • In this paper, with a thermoelectric device using the seebeck effect which generates electromotive force by temperature difference generates electric energy an energy harvesting circuit using MPPT(Maximun Power Point Traking) control is designed. After periodically sampling the open voltage of the thermoelectric device, the 1/2 voltage of open voltage which in a maximum power point is maintained through MPPT control circuit and harvested energy from thermoelectric device is delivered to load through a switch. The proposed thermal energy harvesting circuit is designed with $0.35{\mu}m$ CMOS process and the chip area excluding pads is $1168.7{\mu}m{\times}541.3{\mu}m$.

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Bidirectional Current Triggering in Two-Terminal Planar Device Based on Vanadium Dioxide Thin Film Using 1550nm Laser Diode (1550nm 레이저 다이오드를 이용한 바나듐 이산화물 박막 기반 2단자 평면형 소자에서의 양방향 전류 트리거링)

  • Lee, Yong Wook
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.29 no.4
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    • pp.11-17
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    • 2015
  • While most switching devices are based on PN junctions, a single layer can realize a switching device in the case of vanadium dioxide($VO_2$) thin films. In this paper, bidirectional current triggering(switching) is demonstrated in a two-terminal planar device based on a $VO_2$ thin film by illuminating the film with an infrared laser at 1550nm. To begin with, a two-terminal planar device, which had a $30{\mu}m$-wide $VO_2$ conducting layer and an electrode separation of $10{\mu}m$, was fabricated. A specific bias voltage range for stable bidirectional laser triggering was experimentally obtained by measuring the current-voltage characteristics of the fabricated device in a current-controlled mode. Then, by constructing a test circuit composed of the device, a standard resistor, and a DC voltage source, connected in series, the transient response of laser-triggered current and its response time were investigated with a DC bias voltage, included in the above specific bias voltage range, applied to the device. In the test circuit with a DC voltage source of 3.35V and a $10{\Omega}$ resistor, bidirectional laser triggering could be realized with a maximum on-state current of 15mA and a switching contrast of ~78.95.

u-Manufacturing needs M2M (Machine to Machine) for Ubiquitous Computing World

  • Cha, Suk-Keun;Song, Jun-Yeob;Choi, Jin-Seok
    • 제어로봇시스템학회:학술대회논문집
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    • 2005.06a
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    • pp.1112-1114
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    • 2005
  • Core position of the M2M (Machine to Machine) is device integration fusion using an emerging wireless and next internet technologies as well as IEEE 802.x, Bluetooth, Zigbee, DMB, Wibro etc. for ubiquitous environment that is complementary with IT839 strategy from Ministry of Information & Communication. This paper define and deploy about major functional requirements of M2M devices and middleware for how to it works, worldwide M2M technology trend & activities with its current & future application in manufacturing area that is called u-Manufacturing (Ubiquitous Manufacturing).

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A Study on the Lightening of the Block Chain for Improving Congestion Network in M2M Environment (M2M 환경의 혼잡 네트워크 개선을 위한 블록체인 경량화에 대한 연구)

  • Kim, Sanggeun
    • Journal of Korea Society of Digital Industry and Information Management
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    • v.14 no.3
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    • pp.69-75
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    • 2018
  • Recently, various convergence technologies are attracting attention due to the block chain innovation technology in the M2M environment. Although the block-chain-based technology is known to be secure in its own right, there are various problems such as security and weight reduction in various M2M environments connected with this. In this paper, we propose a new lightweight method for the hash tree generation of block chains to solve the lightweight problem. It is designed considering extensibility without affecting the existing block chain. Performance analysis shows that the computation performance increases with decreasing the existing hash length.

Effects of Organic Binder and Film Thickness on Optoelectrical Properties of AC Powder EL Devices Prepared by Screen Printing Method for LCD Backlight Applications (LCD 백라이트를 위해 스크린 프린팅법으로 제조된 AC Powder EL 소자의 유기결합제와 막두께가 광전기적 성질에 미치는 영향)

  • Lee, Kang-Ryeol;Park, Sung
    • Journal of the Korean Ceramic Society
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    • v.38 no.12
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    • pp.1085-1092
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    • 2001
  • The high efficient AC powder EL devices classified by low cost and low power consumption type fabricated using screen printing method with film thickness and organic binder. Brightness and current density were measured at frequency range of 400Hz∼1kHz and voltage range of 50∼300V$\_$rms/ to estimate optoelectrical properties of AC powder EL devices, respectively. Frequency generator was used as system producing frequency and voltage of a sine wave. Also brightness and current density were measured by luminometer and multimeter. In the case of low cost type AC powder EL device, brightness and current density were about 43 cd/m$^2$and 20$\mu$A/cm$^2$when the thickness of phosphor and dielectric layer was 45∼50$\mu$m under no addition of plasticizer respectively. In the case of low power consumption type AC powder EL device, brightness and current density were about 74 cd/m$^2$and 30∼40$\mu$A/cm$^2$when the thickness of phosphor and dielectric layer was 45∼50$\mu$m and 15∼20$\mu$m under addition of 15wt% plasticizer respectively. Also, AC powder EL device fabricated in this study showed absolutely excellent characteristics as the lifetime was longer than products of other company.

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Development and experimental verification of vortex typed nonfilter nonpoint source pollution reduction device (와류형 미필터 비점오염저감장치의 개발과 실험적 검증)

  • Jang, Suk Hwan;Lee, Jae-Kyoung;Lee, Hae-Kwang;Hwang, Sung-Gyu
    • Journal of Korea Water Resources Association
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    • v.52 no.4
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    • pp.265-277
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    • 2019
  • The objective of this study was to develop and verify an effective vortex typed nonfilter nonpoint source pollution reduction device. To verify this pollution reduction device, a total of twelves scenarios (three rainfall intensities${\times}$two states${\times}$two steps) of experiments were conducted using pollutants. First, simulated inflow (rainfall intensity 2.5 mm/hr: $0.00152m^3/s$, rainfall intensity 3.395 mm/hr: $0.00206m^3/s$, rainfall intensity 6.870 mm/hr: $0.00326m^3/s$) was calculated. Second, pollutants (mixture of 25% of four particle sizes) were selected and injected. Third, pollutant removal efficiencies of this device at its initial state and operating states were measured. As a result of analysis based on rainfall intensity, the concentration of pollutants was decreased by the device at initial and operating states at all rainfall intensities. Its pollutant removal efficiency was more than 80%, the standard set by the Ministry of Environment. Its pollutant removal efficiency was gradually increased over time, reaching approximately 90%. Its pollutant removal efficiency was higher in its operating state than that in its initial state. Therefore, nonpoint source pollutants can be effectively removed by this vortex typed nonpoint source pollution reduction device developed in this study.

Manufacturing of Ni-63 Sealed Source for Betavoltaic Battery Using the Small-scale Electroplating Device (소형 전기도금장치를 이용한 베타전지용 Ni-63 밀봉선원 제작)

  • Kim, Jin Joo;Choi, Sang Mu;Son, Kwang Jae;Hong, Jintae
    • Journal of Radiation Industry
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    • v.11 no.3
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    • pp.173-179
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    • 2017
  • The small-scale electroplating device was designed and fabricated for Ni-63 sealed source (foil type) with a high specific activity needed for production of betavoltaic battery. The condition of Ni electroplating was optimized by using fabricated electroplating device to establish a Ni-63 electroplating condition on the Ni foil. The results showed that the optimum surface morphology and thickness of Ni deposit was obtained for 1,758 seconds at a current density of $15mA{\cdot}cm^{-2}$ with 0.5% tween 20. Radioisotope Ni-63 electroplating was implemented under established condition. The radioactivity of Ni-63 sealed source was calculated to $28mCi{\cdot}cm^{-2}$, and the thickness of Ni-63 deposit was about $2.4{\mu}m$.

Fully Integrated Electromagnetic Noise Suppressors Incorporated with a Magnetic Thin Film on an Oxidized Si Substrate

  • Sohn, Jae-Cheon;Han, S.H.;Yamaguchi, Masahiro;Lim, S.H.
    • Journal of Magnetics
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    • v.12 no.1
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    • pp.21-26
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    • 2007
  • Si-based electromagnetic noise suppressors on coplanar waveguide transmission lines incorporated with a $SiO_2$ dielectric layer and a nanogranular Co-Fe-Al-O magnetic thin film are reported. Unlike glass-based devices, large signal attenuation is observed even in the bare structure without coating the magnetic thin film. Much larger signal attenuation is achieved in fully integrated devices. The transmission scattering parameter ($S_{21}$) is as small as -90 dB at 20 GHz at the following device dimensions; the thicknesses of the $SiO_2$ and Co-Fe-Al-O thin films are 0.1 $\mu$m and 1 $\mu$m, respectively, the length of the transmission line is 15 mm, and the width of the magnetic thin film is 2000 $\mu$m. In all cases, the reflection scattering parameter ($S_{11}$) is below -10 dB over the whole frequency band. Additional distributed capacitance formed by the Cu transmission line/$SiO_2$/Si substrate is responsible for these characteristics. It is considered that the present noise suppressors based on the Si substrate are a first important step to the realization of MMIC noise suppressors.