• 제목/요약/키워드: M2M Device optimization

검색결과 54건 처리시간 0.024초

MEMS 기술 기반 이식형 청각 장치용 전자기 엑츄에이터의 소형화 및 최적화 (Miniaturization and Optimization of Electromagnetic Actuators for Implantable Hearing Device Based on MEMS Technology)

  • 김민규;정용섭;조진호
    • 센서학회지
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    • 제27권2호
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    • pp.99-104
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    • 2018
  • A micro electromagnetic actuator with high vibration efficiency is proposed for use in an implantable hearing device. The actuator, which can be implanted in the middle ear, consists of membranes based on the stainless steel 304 (SUS-304), and other components. In conventional actuators, in which a thick membrane and a silicone elastomer are used, the size reduction was difficult. In order to miniaturize the size of the actuator, it is necessary to reduce the size of the actuation potion that generates the driving force, resulting in reduction of the electromagnetic force. In this paper, the electromagnetic actuator is further miniaturized by the metal membrane and the vibration amplitude is also optimized. The actuator designed according to the simulation results was fabricated by using micro-electro-mechanical systems (MEMS) technology. In particular, a $20{\mu}m$ thick metal membrane was fabricated using the erosion process, which reduced the length of the actuator by more than $400{\mu}m$. In the experiments, the vibration displacement characteristics of the optimized actuator were above 400 nm within the range of 0.1 to 1 kHz when a current of $1mA_{rms}$ was applied to the coil.

Laser Welding Application in Car Body Manufacturing

  • Shin, H.O.;Chang, I.S.;Jung, C.H.
    • International Journal of Korean Welding Society
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    • 제3권1호
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    • pp.2-7
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    • 2003
  • Laser welding application for car body manufacturing has many advantages in the stiffness and the lightness of vehicle, the productivity of assembly line, and the degree of freedom in design. This presentation will express the innovation of car body manufacturing including parameter optimization, process modeling, and system integration. In this application the investment for systems was cut down dramatically by real time switching over the laser path between two welding stations. Points of technical discussion are as follows; optimization of parameters such as laser power, robot speed and trajectory, compact and useful design of jig & fixture to assure welding quality for 3 sheet-layer zinc-coated steel, system integration between 4㎾ Nd:YAG laser device and the other systems, on-line real time welding quality monitoring system, perfect safety standards for high power laser, minimization of consumption costs such as arc lamp, protective glass for optic, etc. This application was successfully launched mass production line in 2001. The laser-welded line of side panel consists of 122 stitches totally. And the length is about 2.4m.

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2단 종속 접속 마하젠더형 광스위치의 BPM 최적설계 및 동작특성 (BPM Design Optimization of Mach-Zehnder Type Tandem Optical Switch and Its Operational Characteristics)

  • 최영규;김기래
    • 전기학회논문지
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    • 제57권10호
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    • pp.1829-1834
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    • 2008
  • An optical switch/modulator is designed and the light propagating characteristics is analyzed by the simplified BPM. The distinctive feature of the switch/modulator is that all the waveguide branches are designed to be single-mode. Principle of the device is based on the coupled mode theory in the Y-junction interconnecting waveguide. In spite of all the waveguides are designed to be single-mode, adjusting the interconnecting waveguide length of the device, the same characteristics as existing device up to date is obtainable. Numerical results show that the switching characteristics periodically depends on the interconnecting waveguide length with a spatial of about 150${\mu}m$ in the Ti:LiNbO3 step index waveguide. The concept of design would be utilized effectively in fabricating the monolithic high density of optical integrated circuit.

Socially Aware Device-to-multi-device User Grouping for Popular Content Distribution

  • Liu, Jianlong;Zhou, Wen'an;Lin, Lixia
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제14권11호
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    • pp.4372-4394
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    • 2020
  • The distribution of popular videos incurs a large amount of traffic at the base stations (BS) of networks. Device-to-multi-device (D2MD) communication has emerged an efficient radio access technology for offloading BS traffic in recent years. However, traditional studies have focused on synchronous user requests whereas asynchronous user requests are more common. Hence, offloading BS traffic in case of asynchronous user requests while considering their time-varying characteristics and the quality of experience (QoE) of video request users (VRUs) is a pressing problem. This paper uses social stability (SS) and video loading duration (VLD)-tolerant property to group VRUs and seed users (SUs) to offload BS traffic. We define the average amount of data transmission (AADT) to measure the network's capacity for offloading BS traffic. Based on this, we formulate a time-varying bipartite graph matching optimization problem. We decouple the problem into two subproblems which can be solved separately in terms of time and space. Then, we propose the socially aware D2MD user selection (SA-D2MD-S) algorithm based on finite horizon optimal stopping theory, and propose the SA-D2MD user matching (SA-D2MD-M) algorithm to solve the two subproblems. The results of simulations show that our algorithms outperform prevalent algorithms.

Study of Switching and Kirk Effects in InAlAs/InGaAs/InAlAs Double Heterojunction Bipolar Transistors

  • Mohiuddin, M.;Sexton, J.;Missous, M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권5호
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    • pp.516-521
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    • 2013
  • This paper investigates the two dominant but intertwined current blocking mechanisms of Switching and Kirk Effect in pure ternary InAlAs/InGaAs/InAlAs Double Heterojunction Bipolar Transistors (DHBTs). Molecular Beam Epitaxy (MBE) grown, lattice-matched samples have been investigated giving substantial experimental results and theoretical reasoning to explain the interplay between these two effects as the current density is increased up to and beyond the theoretical Kirk Effect limit for devices of emitter areas varying from $20{\times}20{\mu}m^2$ to $1{\times}5{\mu}m^2$. Pure ternary InAlAs/InGaAs/InAlAs DHBTs are ideally suited for such investigations because, unless corrective measures are taken, these devices suffer from appreciable current blocking effect due to their large conduction band discontinuity of 0.5 eV and thus facilitating the observation of the two different physical phenomena. This enhanced understanding of the interplay between the Kirk and Switching effect makes the DHBT device design and optimization process more effective and efficient.

실험 계획법을 이용한 진공 차단기의 동특성 최적화 (Dynamic Responses Optimization of Vacuum Circuit Breaker Using Taghchi Method)

  • 조준연;안길영;김성태;양홍익;김규정
    • 대한기계학회논문집 C: 기술과 교육
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    • 제3권2호
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    • pp.141-148
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    • 2015
  • 본 연구에서는 진공 차단기(Vacuum circuit breaker)의 동적 특성을 모사하기 위해 리커다인을 이용한 다물체 동역학 해석 모델이 개발 되었다. 진공 차단기는 VI(Vacuum interrupter)를 포함한 3 개의 주회로 부와, 구동 메커니즘을 포함한 기구부로 구성된다. 이 해석적 모델의 검증을 위해, 해석 결과와 실측을 통한 실험적 결과를 비교 하였다. 일반적으로, 원활한 사고 전류 차단을 위해서는 0.9~1.1m/s 의 차단속도(Opening velocity)가 필요하다. 차단 속도의 향상을 위해, 다구찌 기법을 이용하여 진공 차단기의 설계 변수 최적화를 수행하였다. 또한 향상된 차단기의 동적 특성을 검증하기 위해, 해석 결과와 개선된 샘플의 실험적 결과를 비교 분석 하였다.

고정된 소자치수를 갖는 전력 MOSFET의 최적화 (Optimization of the Power MOSFET with Fixed Device Dimensions)

  • 최연익;황규한;박일용
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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    • pp.457-461
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    • 1996
  • An optimum design methodology for the power MOSFET's with a predetermined mask is proposed and verified by comparing with the results of MEDICI simulation and the data of commercially available devices. Optimization is completed by determining a doping concentration and a thickness of the epitaxial layer which satisfy a specific voltage and current rating requirements as well as a minimum on-resistance for the mask set. The commercial HEX-1 mask set with a die area of $40.4{\times}10^{-3}\;cm^2$ and a T0-220 package has the on-resistance of $1.5{\Omega}$ at 200 V/2.5 A rating while the M-1 mask from this study exhibits $0.6{\Omega}$ on-resistance at 200 V/6 A. The 60 % reduction in the on-resistance and 58 % enhancement in the current rating have been obtained by the proposed method.

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고양력장치 설계 최적화 및 풍동시험 (High Lift Device Design Optimization and Wind Tunnel Tests)

  • 이융교;김철완;조태환
    • 항공우주기술
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    • 제9권1호
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    • pp.78-83
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    • 2010
  • 본 연구에서는 높은 양력을 얻기 위하여 플랩 형상 최적 설계를 시도하였다. 플랩 형태는 플랩 중에서 가장 효율이 좋은 파울러 플랩(fowler flap)이다. 플랩 설계는 최적화 기법을 활용하여 진행하였고 최적화의 초기 형상은 general aviation airfoil과 Wentz 등이 개발한 플랩이다. 최적화 방법으로는 반응면 기법 (Response Surface Method)이 사용되었으며, Hicks-Henne 형상함수가 사용되었고, GA(W)-1 익형과 fowler flap이 조합된 형상의 유동장에 대하여 Navier-Stokes 해석을 수행하였다. 상용 최적화 프로그램인 Visual-Doc, 격자 생성 프로그램인 Gambit/Tgrid, 그리고 유동해석에는 Fluent를 이용하였다. 플랩의 윗면 형상과 gap에 대한 최적화를 수행하여 착륙조건에서의 양력이 증가하였다. 초기 형상과 최적화된 형상의 공력특성 변화를 관찰하기 위하여 항우연의 1m 풍동에서 시험을 수행하였다. 최적화된 형상은 대체로 예측치와 비슷한 경향을 보이나, 이른 실속이 관찰되었다. 또한, 날개와 플랩 간의 간격을 설계치보다 좁혀 줌으로써 양력특성이 향상됨을 알 수 있었는데, 이는 설계시 사용된 난류 모델의 영향이라 판단된다.

On the Gate Oxide Scaling of Sub-l00nm CMOS Transistors

  • Seungheon Song;Jihye Yi;Kim, Woosik;Kazuyuki Fujihara;Kang, Ho-Kyu;Moon, Joo-Tae;Lee, Moon-Yong
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권2호
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    • pp.103-110
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    • 2001
  • Gate oxide scaling for sub-l00nm CMOS devices has been studied. Issues on the gate oxide scaling are reviewed, which are boron penetration, reliability, and direct tunneling leakage currents. Reliability of Sub-2.0nm oxides and the device performance degradation due to boron penetration are investigated. Especially, the effect of gate leakage currents on the transistor characteristics is studied. As a result, it is proposed that thinner oxides than previous expectations may be usable as scaling proceeds. Based on the gate oxide thickness optimization process we have established, high performance CMOS transistors of $L_{gate}=70nm$ and $T_{ox}=1.4nm$ were fabricated, which showed excellent current drives of $860\mu\textrm{A}/\mu\textrm{m}$ (NMOS) and $350\mu\textrm{A}/\mu\textrm{m}$ (PMOS) at $I_{off}=10\mu\textrm{A}/\mu\textrm{m}$ and $V_dd=1.2V$, and CV/I of 1.60ps (NMOS) and 3.32ps(PMOS).

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플로팅 금속 가드링 구조를 이용한 Ga2O3 쇼트키 장벽 다이오드의 항복 특성 개선 연구 (Improved breakdown characteristics of Ga2O3 Schottky barrier diode using floating metal guard ring structure)

  • 최준행;차호영
    • 전기전자학회논문지
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    • 제23권1호
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    • pp.193-199
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    • 2019
  • 본 연구에서는 TCAD 시뮬레이션을 사용하여 산화갈륨 ($Ga_2O_3$) 기반 수직형 쇼트키 장벽 다이오드 고전압 스위칭 소자의 항복전압 특성을 개선하기 위한 가드링 구조를 이온 주입이 필요 없는 간단한 플로팅 금속 구조를 활용하여 제안하였다. 가드링 구조를 도입하여 양극 모서리에 집중되던 전계를 감소시켜 항복전압 성능 개선을 확인하였으며, 이때 금속 가드링의 폭과 간격 및 개수에 따른 항복전압 특성 분석을 전류-전압 특성과 내부 전계 및 포텐셜 분포를 함께 분석하여 최적화를 수행하였다. N형 전자 전송층의 도핑농도가 $5{\times}10^{16}cm^{-3}$이고 두께가 $5{\mu}m$인 구조에 대하여 $1.5{\mu}m$ 폭의 금속 가드링을 $0.2{\mu}m$로 5개 배치하였을 경우 항복전압 2000 V를 얻었으며 이는 가드링 없는 구조에서 얻은 940 V 대비 두 배 이상 향상된 결과이며 온저항 특성의 저하는 없는 것으로 확인되었다. 본 연구에서 활용한 플로팅 금속 가드링 구조는 추가적인 공정단계 없이 소자의 특성을 향상시킬 수 있는 매우 활용도가 높은 기술로 기대된다.