• Journal of Biosystems Engineering
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• 제27권4호
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• pp.273-282
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• 2002

This study was intended to measure and analyze hand-transmitted vibrations from cultivator in idle and operation modes for three different types of field works. Based on this analysis a time for the white finger syndrome to appear on 10% of the operators was estimated assuming that their daily exposure is 3 hours. The 4 methods to reduce the hand vibration were also proposed and compared with each other. The results of the study were summarized as follows : The highest vibration level was recorded during trenching operation, resulting in a total average vibration of 11.5 m/s$^2$. Followings were 7.6 m/s$^2$ during rotary tillage and 7.0 m/s$^2$ for weeding. When exposed to these levels of vibrations three hours a day, the white finger syndrome is likely to appear in 4 years for trenching, 6.2 years for rotary tillage and 6.8 years for weeding operations. Isolation of hand vibration performed by a rubber pad, anti-vibration gloves, a handle anti-vibration device and engine mounts were respectively 15.7%, 16.5%. 26.1% and 27.0%, resulting in most effective methods of the handle anti-vibration device and engine mounts. A better performance of about 33.9% was achieved when both the handle anti-vibration device and engine mounts were used.

• 한국안전학회지
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• 제34권5호
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• pp.31-36
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• 2019

This study made a testing device to evaluate the distribution board management system. Power was supplied to the testing device using a loading-back method and the voltage applied to it was 440 V at the same turn ratio. When the human body electric shock current is 30 mA, the breaking time is set to be less than 240 ms while 30~45 mA current is flowing. The test result shows that in the case of the R-phase it was measured to be 5.19 Hz (193 ms). And the S-phase and T-phase were perfectly cut off at 5.39 Hz (186 ms) and 5.71 Hz (175 ms), respectively. When the human body electric shock current is 60mA, the breaking time is set to be less than 120 ms while 45~75 mA current is flowing. The test result shows that the R-phase, S-phase, and T-phase were accurately cut off at 8.39 Hz (11 ms), 8.87Hz (113 ms) and 9.69 Hz (103 ms), respectively. When the human body electric shock current is 90 mA, the breaking time is set to be less than 48 ms while 75 mA current is flowing. The test result shows that the R-phase, S-phase, and T-phase were accurately cut off at 19.8 Hz (50.4 ms), 16.9 Hz (59.2 ms), and 17.9 Hz (56.0 ms), respectively. That is, the developed testing device satisfied all the requirements of the distribution board evaluation criteria, and it becomes available for the performance evaluation of the distribution board management system.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 추계학술대회
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• pp.255-258
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• 2012

본 논문에서는 온도 차에 의해 기전력이 발생하는 제베크효과를 이용한 열전소자로 전기에너지를 발생시키고, 전압이 최대전력이 발생하는 지점에서 동작하도록 하는 MPPT 제어기능을 갖는 에너지 하베스팅 회로를 설계하였다. 설계된 회로는 열전소자의 오픈 전압을 주기적으로 샘플링 한 후, MPPT 제어 회로를 통해 최대전력 발생 지점인 오픈전압의 1/2에 해당하는 전압을 유지하면서 열전소자로부터 수확된 에너지를 스위치를 통해 부하로 전달하는 역할을 한다. 제안된 열전에너지 하베스팅 회로는 $0.35{\mu}m$ CMOS 공정으로 설계하였고 설계한 회로의 칩 면적은 패드를 제외하고 $1168.7{\mu}m{\times}541.3{\mu}m$이다.

• 조명전기설비학회논문지
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• 제29권4호
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• pp.11-17
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• 2015

While most switching devices are based on PN junctions, a single layer can realize a switching device in the case of vanadium dioxide($VO_2$) thin films. In this paper, bidirectional current triggering(switching) is demonstrated in a two-terminal planar device based on a $VO_2$ thin film by illuminating the film with an infrared laser at 1550nm. To begin with, a two-terminal planar device, which had a $30{\mu}m$-wide $VO_2$ conducting layer and an electrode separation of $10{\mu}m$, was fabricated. A specific bias voltage range for stable bidirectional laser triggering was experimentally obtained by measuring the current-voltage characteristics of the fabricated device in a current-controlled mode. Then, by constructing a test circuit composed of the device, a standard resistor, and a DC voltage source, connected in series, the transient response of laser-triggered current and its response time were investigated with a DC bias voltage, included in the above specific bias voltage range, applied to the device. In the test circuit with a DC voltage source of 3.35V and a $10{\Omega}$ resistor, bidirectional laser triggering could be realized with a maximum on-state current of 15mA and a switching contrast of ~78.95.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2005년도 ICCAS
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• pp.1112-1114
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• 2005

Core position of the M2M (Machine to Machine) is device integration fusion using an emerging wireless and next internet technologies as well as IEEE 802.x, Bluetooth, Zigbee, DMB, Wibro etc. for ubiquitous environment that is complementary with IT839 strategy from Ministry of Information & Communication. This paper define and deploy about major functional requirements of M2M devices and middleware for how to it works, worldwide M2M technology trend & activities with its current & future application in manufacturing area that is called u-Manufacturing (Ubiquitous Manufacturing).

• 디지털산업정보학회논문지
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• 제14권3호
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• pp.69-75
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• 2018

Recently, various convergence technologies are attracting attention due to the block chain innovation technology in the M2M environment. Although the block-chain-based technology is known to be secure in its own right, there are various problems such as security and weight reduction in various M2M environments connected with this. In this paper, we propose a new lightweight method for the hash tree generation of block chains to solve the lightweight problem. It is designed considering extensibility without affecting the existing block chain. Performance analysis shows that the computation performance increases with decreasing the existing hash length.

• 한국세라믹학회지
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• 제38권12호
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• pp.1085-1092
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• 2001

고효율 AC powder EL 소자를 초저가형과 저전력 소모형으로 분류하여 막의 두께와 제조된 유기결합제에 따라 스크린 프린팅법으로 제조하였다. 제조된 소자의 광전기적 특성을 평가하기 위하여 인가 주파수는 400Hz~1kHz, 인가 전압은 50~300 $V_{rms}$까지 변화시켜 휘도 및 전류밀도를 측정하였다. 주파수 및 전압공급원은 정현파 발생 장치로서 frequency generator를 이용하였다. 또한 휘도는 luminometer 의해 측정되었으며 전류밀도 측정을 위하여 multimeter를 사용하였다. 초저가형 AC powder EL 소자의 경우에는 가소제를 첨가하지 않고 발광층의 두께는 45~50$\mu\textrm{m}$이며 유전층의 두께는 약 10$\mu\textrm{m}$에서 43cd/$m^2$ 정도의 휘도와 20$\mu$A/$cm^2$정도의 전류밀도를 얻을 수 있었으며 저전력 소모형 AC powder EL 소자의 경우에는 15wt의 가소제 첨가하에 발광층의 두께는 45~50$\mu$m이며 유전층의 두께는 15~20$\mu$m에서 74cd/ $m^2$정도의 휘도와 30~40$\mu$A/ $m^2$정도의 전류밀도를 얻을 수 있었다. 또한 수명시간에 있어서 본 연구에서 제조한 AC powder EL 소자가 타사 제품보다 절대적으로 우수한 특성을 보였다.다.

• 한국수자원학회논문집
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• 제52권4호
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• pp.265-277
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• 2019

본 연구에서는 효율적인 와류형 미필터 비점오염저감장치를 개발하고 검증하였다. 저감장치의 검증을 위해 오염물질을 이용하여 총 12개 형태(3개 강우강도${\times}$2개 상태${\times}$2개 단계)의 실험을 진행하였다. 실험은 (1) 모의유입량 산정(강우강도 2.5 mm/hr: $0.00152m^3/s$, 강우강도 3.395 mm/hr: $0.00206m^3/s$, 강우강도 6.870 mm/hr: $0.00326m^3/s$); (2) 오염물질 채취 및 투입(4개 입경 사이즈의 25%씩 혼합); (3) 오염물질 제거효율 측정으로 구성하였고, 장치 초기상태와 운영상태로 구분하여 수행되었다. 강우강도별로 분석한 결과, 모든 강우강도에서 초기상태 및 운영상태 모두 오염물질 농도가 감소하였으며, 유입수 대비 유출수 오염물질 제거효율에서도 오염물질을 환경부 기준 80% 이상 제거하는 결과를 보였다. 특히 제거효율이 시간이 지남에 따라 서서히 증가하여 약 90%를 상회하였으며, 초기상태보다 운영상태에서 오염물질 제거효율이 더 높은 것으로 나타났다. 따라서 본 연구에서 개발한 와류형 미필터 비점오염저감장치로 효율적인 비점오염원을 제거할 수 있음을 증명하였다.

• 방사선산업학회지
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• 제11권3호
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• pp.173-179
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• 2017

The small-scale electroplating device was designed and fabricated for Ni-63 sealed source (foil type) with a high specific activity needed for production of betavoltaic battery. The condition of Ni electroplating was optimized by using fabricated electroplating device to establish a Ni-63 electroplating condition on the Ni foil. The results showed that the optimum surface morphology and thickness of Ni deposit was obtained for 1,758 seconds at a current density of $15mA{\cdot}cm^{-2}$ with 0.5% tween 20. Radioisotope Ni-63 electroplating was implemented under established condition. The radioactivity of Ni-63 sealed source was calculated to $28mCi{\cdot}cm^{-2}$, and the thickness of Ni-63 deposit was about $2.4{\mu}m$.

• Journal of Magnetics
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• 제12권1호
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• pp.21-26
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• 2007

Si-based electromagnetic noise suppressors on coplanar waveguide transmission lines incorporated with a $SiO_2$ dielectric layer and a nanogranular Co-Fe-Al-O magnetic thin film are reported. Unlike glass-based devices, large signal attenuation is observed even in the bare structure without coating the magnetic thin film. Much larger signal attenuation is achieved in fully integrated devices. The transmission scattering parameter ($S_{21}$) is as small as -90 dB at 20 GHz at the following device dimensions; the thicknesses of the $SiO_2$ and Co-Fe-Al-O thin films are 0.1 $\mu$m and 1 $\mu$m, respectively, the length of the transmission line is 15 mm, and the width of the magnetic thin film is 2000 $\mu$m. In all cases, the reflection scattering parameter ($S_{11}$) is below -10 dB over the whole frequency band. Additional distributed capacitance formed by the Cu transmission line/$SiO_2$/Si substrate is responsible for these characteristics. It is considered that the present noise suppressors based on the Si substrate are a first important step to the realization of MMIC noise suppressors.