• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1583-1586
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• 2006

All non-dopant white organic light-emitting diodes (WOLEDs) have been realized by using solid state highly fluorescent red bis(4-(N-(1- naphthyl)phenylamino)phenyl)fumaronitrile (NPAFN) and amorphous bipolar blue light-emitting 2-(4- diphenylamino)phenyl-5-(4-triphenylsilyl)phenyl- 1,3,4-oxadiazole (TPAOXD), together with well known green fluorophore tris(8- hydroxyquinolinato)aluminum $(Alq_3)$. The fabrication of multilayer WOLEDs did not involve the hard-tocontrol doping process. Two WOLEDs, Device I and II, different in layer thickness of $Alq_3$, 30 and 15 nm, respectively, emitted strong electroluminescence (EL) as intense as $25,000\;cd/m^2$. For practical solid state lighting application, EL intensity exceeding $1,000\;cd/m^2$ was achieved at current density of $18-19\;mA/cm^2$ or driving voltage of 6.5-8 V and the devices exhibited external quantum efficiency $({\eta}_{ext})$ of $2.6{\sim}2.9%$ corresponding to power efficiency $({\eta}_P)$ of $2.1{\sim}2.3\;lm/W$ at the required brightness.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.944-947
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• 2003

We report efficient white organic electroluminescent devices consisting of a blue-emitting layer of 9,10-bis[(2",7"-di-t-butyl)-9',9"-spirobifluorenyl]anthracene (TBSA) and a red-emitting layer of 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[i,j]quinolizin-8-yl)vinyl]-4H-pyran) (DCM2) doped into 4,4'bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (${\alpha}-NPD$). The device shows the CIE coordinates of (0.32, 0.37). The external quantum efficiency is about 3.4 % and the luminous efficiency is about 3.9 lm/W at luminance of 100 $cd/m^{2}$. The maximum luminance is about 45,400 $cd/m^{2}$ at 11.5 V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.12
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• pp.9-12
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• 2005

This paper describes the feasibility of the electrostatic cell using carrier injection in SCR(space charge region) of PN junction. It compares the principle of the electrostatic cell's operation with the solar cell's. According to the experiment and calculation of this paper, when the cross section area of the device is $0.0001cm^2$, the device current becomes 0.15mA which is practically high enough. This paper proposes that the electrostatic cell can be used as a physical battery.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.702-712
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• 2016

A wrist watch type wearable cardiovascular monitoring device is proposed for continuous and convenient monitoring of the patient's cardiovascular system. For comprehensive monitoring of the patient's cardiovascular system, the concurrent electrocardiogram (ECG) and arterial pulse wave (APW) sensor front-end are fabricated in $0.18{\mu}m$ CMOS technology. The ECG sensor frontend achieves 84.6-dB CMRR and $2.3-{\mu}Vrms$-input referred noise with $30-{\mu}W$ power consumption. The APW sensor front-end achieves $3.2-V/{\Omega}$ sensitivity with accurate bio-impedance measurement lesser than 1% error, consuming only $984-{\mu}W$. The ECG and APW sensor front-end is combined with power management unit, micro controller unit (MCU), display and Bluetooth transceiver so that concurrently measured ECG and APW can be transmitted into smartphone, showing patient's cardiovascular state in real time. In order to verify operation of the cardiovascular monitoring system, cardiovascular indicator is extracted from the healthy volunteer. As a result, 5.74 m/second-pulse wave velocity (PWV), 79.1 beats/minute-heart rate (HR) and positive slope of b-d peak-accelerated arterial pulse wave (AAPW) are achieved, showing the volunteer's healthy cardiovascular state.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.3
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• pp.35-41
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• 2013

An efficient multi-stage rectifier for wireless power transfer in deep implant medical devices is implemented using $0.18-{\mu}m$ CMOS technology. The presented three-stage rectifier employs a cross-coupled topology to boost a small input AC signal from the external device to produce a 1.2-1.5 V output DC signal for the implant device. The designed rectifier achieves a maximum measured power conversion efficiency of 70% at 13.56 MHz under the conditions of a low 0.6-Vpp RF input signal with a $10-k{\Omega}$ output load resistance.

• New & Renewable Energy
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• v.9 no.2
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• pp.51-57
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• 2013

The Grid code is being strengthen as increase of renewable energy ratio. Especially, the grid connection regulations are continuously being updated for stable operation of power grids. Static grid support and Dynamic grid support must make an accurate measure at Grid connected point because they needs control algorithm individually. It has to exactly measure voltage including switching ripple at the output of the inverter generating system. In addition, it is necessary to have an accurate voltage measurement when the situation rapidly changing the grid impedance is caused by the input of serial impedance of transformer and line impedance as well as Grid Fault Device. In this paper, We propose a new detection method of grid voltage to calculate accurately the r.m.s voltage of the grid connection point along the standard required by the low voltage regulation. We verified performance through simulation grid fault device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.199-204
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• 2016

This paper was proposed floating island power MOSFET for lowering on state resistance and the proposed device was maintained 600 V breakdown voltage. The electrical field distribution of floating island power MOSFET was dispersed to floating island between P-base and N-drift. Therefore, we designed higher doping concentration of drift region than doping concentration of planar type power MOSFET. And so we obtain the lower on resistance than on resistance of planar type power MOSFET. We needed the higher doping concentration of floating island than doping concentration of drift region and needed width and depth of floating island for formation of floating island region. We obtained the optimal parameters. The depth of floating island was $32{\mu}m$. The doping concentration of floating island was $5{\times}1,012cm^2$. And the width of floating island was $3{\mu}m$. As a result of designing the floating island power MOSFET, we obtained 723 V breakdown voltage and $0.108{\Omega}cm^2$ on resistance. When we compared to planar power MOSFET, the on resistance was lowered 24.5% than its of planar power MOSFET. The proposed device will be used to electrical vehicle and renewable industry.

• Polymer(Korea)
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• v.26 no.4
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• pp.543-550
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• 2002

We have synthesized a novel carrier transporting copolymer having triphenylamine moiety as a hole transporting unit and triazine moiety as an electron transporting unit in the polymer side chain. Single-layered organic electroluminescent (EL) devices consisted of ITO/copolymer and emitting materials (DCM, coumarin 6, DPvBi)/Al exhibited maximum external quantum efficiency when the ratio of hole transporting unit and electron transporting unit is 6:4 and the content of emitting material is 30 wt%. Especially, the devices emitted the light of red (620 nm), green (520 nm) and blue (450 nm) corresponding to the emitting materials, respectively. A maximum luminance of ITO/copolymer (6:4) and DCM (30 wt%)/Al EL device was about 500 cd/$m^2$ at a DC drive voltage of 12V.

• Journal of the Korean Electrochemical Society
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• v.1 no.1
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• pp.24-27
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• 1998

Electroluminescence (EL) comes from the light emission obtained by the electrical excitation energy passing through a phosphor layer undo. an applied high electrical field $(10^6 V/cm)$. The preparation of white and blue phosphors and characterizations of light emitting alternating current powder electroluminescent devices (ACPELDs) were investigated. In this work, we fabricated two kinds of ELDs, that is, yellow electroluminescent device (B-ELD), blue electroluminescent device (B-ELD). The basic st.uctures of Y-ELD and B-ELD are ITO (Indium Tin Oxide)/phosphor layer/Insulator layer/Carbon electrode and ITO/Phosphor layer/Insulating layer/carbon electrode, respectively. Another structures of ITO/Phosphor and Insulator mixture layer/Backelectrode are introduced. EL spectra and luminance of two types of ELDs were measured by changing voltage at fixed frequency 0.4kHz, 1.5kHz. Blue and yellow phosphors prepared in this work show $50cd/m^2\;and\;30cd/m^2$ of luminance at 400Hz, 150V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.421-424
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• 2004

As the deep sub-micron devices are recently integrated high package density, novel process method for sub $0.1{\mu}m$ devices is required to get the superior thin gate oxide characteristics and reliability. However, few have reported on the electrical quality and reliability on the thin gate oxide. In this paper I will recommand a novel shallow trench isolation structure for thin gate oxide $30{\AA}$ of deep sub-micron devices. Different from using normal LOCOS technology, novel shallow trench isolation have a unique 'inverse narrow channel effects' when the channel width of the devices is scaled down shallow trench isolation has less encroachment into the active device area. Based on the research, I could confirm the successful fabrication of shallow trench isolation(STI) structure by the SEM, in addition to thermally stable silicide process was achiever. I also obtained the decrease threshold voltage value of the channel edge and the contact resistance of $13.2[\Omega/cont.]$ at $0.3{\times}0.3{\mu}m^2$. The reliability was measured from dielectric breakdown time, shallow trench isolation structure had tile stable value of $25[%]{\sim}90[%]$ more than 55[sec].