• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.773-776
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• 2002

Efficient organic white light-emitting diodes are fabricated by doping [bis(2-methyl-8-quinolinolato) (tripheny-siloxy)aluminium (III)] (SAlq), a blue-emitting layer, with a red fluorescent dye of 4-dicyanomethylene-2-methyl-6-{2-(2,3,6,7-tetrahydro-1H,5H-benzo[i,j]quinolizin-8-yl)vinyl}-4H-pyran (DCM2). The incomplete energy transfer from blue-emitting SAlq to red-emitting DCM2 enables to obtain a balanced white light-emission. A device with the structure of ITO/TPD (50 nm)/SAlq:DCM2 (30 nm, 0.5 %)/$Alq_3$ (20 nm)/LiF (0.5 nm)/AI shows emission peaks at 456 nm and 482 nm from SAlq and at 570 nm from DCM2. The white light-emitting device shows an external quantum efficiency of about 2.3 %, a luminous efficiency of about 2.4 lm/W, and the CIE chromaticity coordinates of (0.32, 0.37) at 100 cd/m^2. A maximum luminance of about 23,800 cd/m^2. is obtained at 15 V and the current density of 782 mA/cm^2.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.4
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• pp.39-52
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• 2000

A design of 2 stage S-DLVA(successive detector log video amplifier) was studied to detect wide dynamic radar pulse ranging from -70 ㏈m to 0㏈m. A basic design idea was focused on the linear detection in logarithmic scale of wide dynamic range radar pulses from nosie-like weak power of -70 ㏈m to relatively high power 0 ㏈m. It is highly formidable, since it requires high speed detection less than 10 nsec over the operating frequency ranges from 6 to 18 ㎓. A limiter diode, a tunnel diode and an L17-C were used as a protecting device, a detector diode and a log video amplifier in companion as a single stage detector to give voltage output proportional to the input power of about 35 ㏈ dynamic range. A protype of 2-stage DLVA having one more single stage detector was fabricated with a 32 ㏈ low noise amplifier and a 3 ㏈ hybrid coupler to provide total 70 ㏈ dynamic range detection. The logging characteristics were measured to have log slope of 25m.V/㏈ against 70 ㏈ logging range from -55 ㏈m to +15 ㏈m, the log linearity of within +/- 1.5 ㏈, and tangential sensitivity was at -63 ㏈m. The pulse dynamics of rise time and recovery time were measured as 50 nsec and 1.2 $\mu$sec, respectively. The reason might be due to the parasitic capacitances of packaged limiter, tunnel diode, and L17-C.

• IEMEK Journal of Embedded Systems and Applications
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• v.17 no.2
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• pp.93-100
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• 2022

In this paper, we propose a machine learning-based method for supporting resource management of IoT software platforms in a multi-modal sensing scenario. We assume that an IoT device installed with a oneM2M-compatible software platform is connected with various sensors such as PIR, sound, dust, ambient light, ultrasonic, accelerometer, through different embedded system interfaces such as general purpose input output (GPIO), I2C, SPI, USB. Based on a collected dataset including CPU usage and user-defined priority, a machine learning model is trained to estimate the level of nice value required to adjust according to the resource usage patterns. The proposed method is validated by comparing with a rule-based control strategy, showing its practical capability in a multi-modal sensing scenario of IoT devices.

• Journal of Biosystems Engineering
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• v.23 no.4
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• pp.365-372
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• 1998

This study was carried out to develop a nutrient-solution mixing-and-supplying system, which used a low-cost metering device instead of expensive metering pumps and a fuzzy logic controller. A low cost and precise overflow-type metering device was developed and evaluated by testing the flow discharge for the automatic nutrient-solution mixing-and-supplying system for snail-scale hydroponic sewers. The fuzzy logic controllers, which could predict and meet the desired values of EC and supply rate of nutrient solution were developed and verified by simulation and experiment. this fuzzy logic controller, whose algorithm consists of four crisp inputs, two crisp outputs and nine rules, was developed to predict the desired value of EC and supply rate of nutrient solution and two crisp inputs, one crisp output and nine rules used to control EC to the desired values. The nutrient-solution mixing-and-supplying system showed satisfactory EC control performance with the maximum overshooting of 0.035 mS/cm and the maximum settling time of 15 minutes in case of increasing 0.7 mS/cm. also, the accuracy of the overflow-type metering device in terms of the full-scale error was 2.29% when using solenoid valve only and 0.2% when using solenoid valve and flow control valve together.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.34-36
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• 2008

Highly efficient red and green phosphorescent devices comprising a simple bilayer structure are reported. The driving voltage to reach $1000\;cd/m^2$ is 4.5 V in $Bebq_2:\;Ir(piq)_3$ red phosphorescent device. Current and power efficiency values of 9.66 cd/A and 6.90 lm/W in this bi-layered simple structure PHOLEDs are obtained, respectively. While in $Bepp_2:Ir(ppy)_3$ green phosphorescent device, the operating voltage value of 3.3V and current and power efficiencies of 37.89 cd/A and 35.02 lm/W to obtain a luminance of $1000\;cd/m^2$ are noticed, respectively.

• Journal of Sensor Science and Technology
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• v.10 no.2
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• pp.86-90
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• 2001

A pyroelectric senior using P(VDF/TrFE) film for sensing materials has been fabricated and evaluated with other commercial pyroelectric sensors that use ceramic materials for sensing. The device was mounted in a TO-5 housing to detect infrared light of $5.5{\sim}14\;{\mu}m$ wavelength. The NEP (noise equivalent power) and specific detectivity $D^*$ of the device were $2.13{\times}10^{-8}\;W$ and $9.37{\times}10^6\;cm/w$ respectively under emission energy of $13\;{\mu}W/cm^2$ respectively. These result shows a better characteristics than other commercial pyroelectric sensors NEP $8.08{\times}10^{-7}\;W$ and $D^*$ $2.47{\times}10^5\;cm/w$.

• Journal of Information Display
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• v.8 no.1
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• pp.10-13
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• 2007

We synthesized new blue and bluish green emitting materials by using fully substituted ethylene moieties. Multi-layered EL devices were fabricated with synthesized materials and evaluated in terms of emission color and luminescence efficiency. TBBPE[EML 2] device showed bluish-green CIE value of (0.236, 0.412) and 5.02cd/A at $10mA/cm^2$. BPBBPE[EML 3] device also showed sky-blue CIE value of(0.218, 0.355) and 2.31cd/A at $l0mA/cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.166-169
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• 2000

The Organic Electroluminescence (OEL) device, that was consisted of ALq3(8-hydroxyquinoline aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine), has been used. We investigated characteristics of brightness and current density about OEL that was oxidated each layers. We used two samples that were fabricated each continuous and non-continuous method. Emission was observed above 10mA/$\textrm{cm}^2$ and luminance was measured to be 1530cd/$\textrm{cm}^2$ at a current density of 100mA/$\textrm{cm}^2$. A luminance of over 2600cd/$\textrm{cm}^2$ was also observed after the final fabrication process.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.11
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• pp.902-909
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• 1991

A reproducible selective dry etch process of GaAs/AlGaAs Heterostructures for High Electron Mobility Transistor(HEMT) Device fabrication is developed. Using RIE mode with $CCl_{2}F_{2}$ as the basic process gas, the observed etch selectivity of GaAs layer with respect to GaAs/$Al_{0.3}Ga_{0.7}$As is about 610:1. Severe polymer deposition problem, parialy generated from the use of $CCl_{2}F_{2}$ gas only, has been significantly reduced by adding a small amount of He gas or by $O_{2}$ plasma ashing after etch process. In order to obtain an optimized etch process for HEMT device fabrication, we com pared the properties of the wet etched Schottky contact with those of the dry etched one, and set dry etch condition to approach the characteristics of Schottky diode on wet etched surface. By applying the optimized etch process, the fabricated HEMT devices have the maximum transconductance $g_{mext}$ of 224 mS/mm, and have relatively uniform distribution across the 2inch wafer in the value of 200$\pm$20mS/mm.

• Journal of Biomedical Engineering Research
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• v.24 no.2
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• pp.83-89
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• 2003

The gas electron multiplier placed in the drift volume of conventional gas detectors, is a conceptually simple device for producing a large gas gain by concentrating the drift electric field over a very short distance to the point that electron avalanching occurs(〉 10$^4$ V/cm), greatly increasing the number of drifting electrons. This device consists of a thin insulating foil of several tens of urn in thickness. covered on each side with a thin metal layer(Cu), with tiny holes, usually 100 ${\mu}{\textrm}{m}$ or less in diameter. and with a spacing of 100-200 ${\mu}{\textrm}{m}$ through the entire foil. perforated by using chemical etching or high-powered laser beam technique In this study, we have investigated its operating properties with various experimental conditions, and demonstrated the possibility of using this device as a digital X-ray imaging sensor, by acquiring X-ray images based on the scintillation properties of the gas electron multiplier with standard CCD camera.