• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.114-120
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• 1994

We have been successfully fabricated the low nois HEMT device with AlGaAs and GaAs structure. The epitazial layer with n-type AlgaAs and undoped GaAs was grown by molecular beam epitaxy(MBE) system. Ohmic resistivity of the ource and drain contact is below 5${\times}10^{6}{\Omega}{\cdot}cm^{2}$ by the rapid thermal annealing (RTA) process. The ideality factor of the Schottky gate is below 1.6 and the gate material was Ti/Pt/Au. The HEMTs with 0.25$\mu$m-long and 200$\mu$m-wide gates have exhibited a noise figure of 0.65dB with associated gain of 9dB at 12GHz, and a transconductance of 208mS/mm.

• Journal of Biosystems Engineering
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• v.22 no.2
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• pp.127-136
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• 1997

This study was accomplished to develop a pneumatic granular applicator that can be attached to the conventional ride-on rice transplanter. Operating conditions of a metering device for the applicator were determined so as to obtain the required discharge rate of granules for field application. The shape and size of diffuser was selected for the applicator and the spacing between diffusers on a boom and the boom height were determined as an optimal application condition for uniform distribution. The diffuser spacing of 1m for the fertilizer and the diffuser spacing of 0.8m for the pesticide at the boom height over 0.8m were acceptable.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.11C
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• pp.1120-1127
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• 2006

[ $GF(2^m)$ ] for elliptic curve cryptosystem. The proposed multiplier uses Gaussian normal basis representation and produces multiplication results at a rate of one per [m/w] clock cycles, where w is the selected we.4 size. We implement the p.oposed design using Xilinx XC2V1000 FPGA device. Our design has significantly less critical path delay compared with previously proposed hard ware implementations.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.424-428
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• 1987

A $2{\mu}m$ CMOS P-well double metal technology has been developed. Phosphorus deep implantation and drive-in diffusion steps were utilized to prevent the low voltage bulk punch through in the short channel, 1.6[${\mu}m$] Leff, PMOS device. Double metal process with the rules of 5[${\mu}m$] 1st metal pitch and 7[${\mu}m$] 2nd metal pitch was successfully implemented by using VLTO, low temperature oxide, as on intermetal dielectric.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• Bulletin of the Korean Chemical Society
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• v.31 no.10
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• pp.2884-2888
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• 2010

Two red fluorescent DCJTB derivatives (Red 1 and 2) based on modified pyrans were synthesized and their electroluminescent properties were investigated. Multilayered OLEDs were fabricated with the device structure of ITO/NPB (40 nm)/Red 1, 2 or DCJTB (0.5 or 1%): $Alq_3$ (20 nm)/$Alq_3$ (40 nm)/Liq (2 nm)/Al. All devices exhibited efficient red emissions. In particular, a device containing emitter Red 2 as a dopant in the emitting layer, the maximum luminance was $8737\;cd/m^2$ at 12.0 V, the luminous and power efficiencies were 2.31 cd/A and 1.25 lm/W at $20\;mA/cm^2$, respectively. The peak wavelength of the electroluminescence was 638 nm with the CIE (x,y) coordinates of (0.63, 0.36) at 7.0 V.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.7-11
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• 2006

The changes of the electrical conductivity in chalcogenide amorphous semiconductors, $Ge_{1}Se_{1}Te_{2}$, have been studied. A phase change random access memory (PRAM) device without an access transistor is successfully fabricated with the $Ge_{1}Se_{1}Te_{2}$-phase-change resistor, which has much higher electrical resistivity than $Ge_{2}Sb_{2}Te_{5}$ and its electric resistivity can be varied by the factor of $10^5$ times, relating with the degree of crystallization. 100 nm thick $Ge_{1}Se_{1}Te_{2}$ thin film was formed by vacuum deposition at $1.5{\times}10^{-5}$ Torr. The static mode switching (DC test) is tested for the $100\;{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device. In the first sweep, the amorphous $Ge_{1}Se_{1}Te_{2}$ thin film showed a high resistance state at low voltage region. However, when it reached to the threshold voltage, $V_{th}$, the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The pulsed mode switching of the $20{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device showed that the reset of device was done with a 80 ns-8.6 V pulse and the set of device was done with a 200 ns-4.3 V pulse.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1575-1577
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• 2002

In this study, multi layer type OLED(Organic Light Emitting Diode) has been fabricated using $Snq_2$, $Snq_4$, and $Alq_3$ for development of high efficiency, electrical and optical properties of multi layer type OLED investigated. The HTL(Hole Transfer Layer) and EML(Emitting Material Layer) were fabricated by using vacuum evaporation on ITO electrode, and its thickness controlled using thickness monitor. Al was used as a cathode. The electrical and optical properties such as J-V, brightness-V and EL spectrum of OLED device was measured using I.V.L.T system. The result, brightness of $Alq_3$, $Snq_2$ and $Snq_4$ were $3900cd/m^2$, $63cd/m^2$ and $23cd/m^2$ respectively.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.212-215
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• 2011

New organic light-emitting diodes with structure of indium-tin-oxide[ITO]/N,N'-diphenyl-N, N'-bis-[4-(phenyl-m-tolvlamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD]/1,1-bis-(di-4-poly-aminophenyl) cyclohexane[TAPC]/bis(10-hydroxy-benzo(h)quinolinato)beryllium[Bebq2]/Bebq2:iridium(III)bis(2-phenylquinoline-N,C2')acetylacetonate[(pq)2Ir(acac)]/ET-137[electron transport material from SFC Co]/LiF/Al using the selective doping of 5%-(pq)2Ir(acac) in a single Bebq2 host in the two wavelength (green, orange) emitter formation were proposed and characterized. In the experiments, with a 300${\AA}$-thick undoped emitter of Bebq2, two kinds of devices with the doped emitter thicknesses of 20${\AA}$ and 40${\AA}$ in the Bebq2:(pq)2Ir(acac) were fabricated. The device with a 20${\AA}$-thick doped emitter is referred to as "D-1" and the device with a 4${\AA}$-thick doped emitter is referred to as "D-2". Under an applied voltage of 9V, the luminance of D-1 and D-2 were 7780 $cd/m^2$ and 6620 $cd/m^2$, respectively. The electroluminescent spectrum of each fabricated device showed peak emissions at the same two wavelengths: 508 nm and 596 nm. However, the relative intensity of 596 nm to 508 nm at those wavelengths was higher in the D-2 than in the D-1. The D-1 and D-2 devices showed maximum current efficiencies of 5.2 cd/A and 6.0 cd/A, and color coordinates of (0.31, 0.50) and (0.37, 0.48) on the Commission Internationale de I'Eclairage[CIE] chart, respectively.

• The Journal of the Korea institute of electronic communication sciences
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• v.3 no.2
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• pp.106-111
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• 2008

At the ubiquitous computing, Mobile RFID, which the convergence RFID and mobile device, researches are core method and infra to service B2B, B2C, and B2B2C service domain. We propose the functions of middleware to develop the mobile RFID device. It consists of multi-code integrated recognition module, the reader control module, the module code interpretation, and Dispatcher module. These functions can recognize the tag of EPC/ISO and mCode type. We describe the zone file of local ODS and the implemented module to read the 13.56MHz tag.