• 한국산학기술학회논문지
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• 제17권4호
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• pp.752-757
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• 2016

M2M(Machine to Machine) 통신은 사람이 직접적으로 간섭하지 않더라도, 네트워크 통신을 경유하여 비즈니스 응용프로그램과 장치가 서로 의사소통을 수행한다. 본 논문에서 수행한 연구의 목적은 IMS(IP Multimedia Subsystem) 기반의 M2M 수평 서비스 플랫폼을 이용하여, M2M 게이트웨이를 사용하는 IMS 네트워크 코어를 통해 M2M 장치와 M2M AS(Application server)를 연결하는 것이다. IMS는 모바일 사용자에게 IP 멀티미디어 서비스를 제공하기 위해 3rd Partnership Project (3GPP)의 무선 표준기구가 정의한 아키텍처 프레임 워크이다. 본 논문에는 MSRP를 이용한 IMS기반의 수평적 M2M 네트워크 서비스 플랫폼의 설계와 구현이 기술되어 있다. 그리고 프로토콜과 기본 아키텍쳐를 요약하였으며, 아키텍쳐의 호출 흐름과 각 프로세스에서의 작동 요소, 아키텍쳐의 설계에 관한 자세한 설명을 제공한다. 또한, 제안하는 플랫폼의 설계와 구현 과정, 사용된 각각의 도구, 구성 요소의 선택과 그것의 중요성에 관한 설명이 서술되어 있다. 또한, M2M 게이트웨이, M2M 응용 프로그램 서버, 오픈 IMS 코어, 비즈니스 응용 프로그램과 M2M 장치를 설계하고 구현하는 방법을 설명한다.

• Journal of Biosystems Engineering
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• 제37권3호
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• pp.155-165
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• 2012

This study was performed to offer the data for design of the seedling bed transfer equipment to make the automation of working process in a plant factory. The seedling bed transfer equipment pushing the seedling bed with bearing wheels on the rail for interconnecting each working process by a pneumatic cylinder was made and examined. The examined transfer force to push the seedling bed with a weight of 178.9 N by the pneumatic cylinder with length of 60 cm and section area of 5 $cm^2$ was measured by experiments. The examined transfer forces was compared with theoretical ones calculated by the theoretical formula derived from dynamic system analysis according to the number of the seedling bed and pushing speed of the pneumatic cylinder head at no load. The transfer function of the equipment with the input variable as the pushing speed $V_{h0}$(m/s) and the output variable as the transfer force f(t)(N) was represented as $F(s)=(V_{h0}/k)(s+B/M)/(s(s^2+Bs/M+1/(kM))$ where M(kg), k(m/N) and B(Ns/m) are the mass of the bed, the compression coefficient of the pneumatic cylinder and the dynamic friction coefficient between the seedling bed and the rail, respectively. The examined transfer force curves and the theoretical ones were represented similar wave forms as to use the theoretical formular to design the device for the seedling bed transfer. The condition of no vibration of the transfer force curve was $kB^2>4M$. The condition of transferring the bed by the repeatable impact and vibration force according to difference of transfer distance of the pneumatic cylinder head from that of the bed was as $Ce^{-\frac{3{\pi}D}{2\omega}}<-1$, where ${\omega}=\sqrt{\frac{1}{kM}-\frac{B^2}{4M^2}}$, $C=\{\frac{\frac{B}{2M}-\frac{1}{kB}}{\omega}\}$, $D=\frac{B}{2M}$. The examined mean peak transfer force represented 4 times of the stead state transfer force. Therefore it seemed that the transfer force of the pneumatic cylinder required for design of the push device was 4Bv where v is the pushing speed.

• 한국광학회지
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• 제25권6호
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• pp.334-339
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• 2014

이 논문에서는 소형센트릭 카메라의 광학적 특성이 분석적, 실험적으로 연구되었다. 광학적 특성으로 소형센트릭광학계의 재귀반사 광도계수가 조사되었다. 우선, 시뮬레이션을 통해서, 이론적 재귀반사광도계수 값을 측정하였다. 두번째로, 소형센트릭 카메라 장치를 디자인 하였으며, 이후 실험을 통해 실제 장치의 재귀반사광고계수를 측정하였다. 시뮬레이션과 시험을 통해, 재귀반사광도계수의 측정치 및 실험치 모두가 (P384200CPH: $0,0042m^2/sr{\sim}0,018m^2/sr$, P285200CPH: $0,0045m^2/sr{\sim}0,0297m^2/sr$, P321450S: $0,0021m^2/sr{\sim}0,00963m^2/sr$) 1.4 ~ 4.9의 분각에서 $0,002{\sim}0,03m^2/sr$의 범위에 있음을 발견하였다. 이 결과는, 실제 장비를 구상하는데 사용된 메커니즘과 실험방법의 중요성(유효성)을 증명한다. 이에따라, 이 유효한 결과를 통해서, 이 연구는 광학공학의 이론과 실제의 발전에 기여하였다.

• 한국물환경학회지
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• 제22권3호
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• pp.475-481
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• 2006

The major problem in closing water like lakes and ponds in Korea is that because they are exposed to surrounding, so easily polluted. The pollution in closing water can be caused by not only artificial factor like sewage but also natural factor like elution from sediment. For insurance of safe and satisfied water source, lots of studies and projects are now going on. In this study, we examined the behavior and effect of microbubble ($3{\sim}10{\mu}m$) produced by device called O.S.D (Oxygen Solubillization Device) in small size pond. The value of oxygen transfer coefficient ($K_La$) was 0.68/min independently of air flow rate, 6.5 times higher than commercial aeration stone and the variation of nitrogen concentration was $0.008NO_3/O_2$, DO concentration was potentially saturated for 24 hr. From the results of pilot plant, SOD of experiment (O.S.D) and control were $12.18gO_2{\cdot}m^{-2}{\cdot}d^{-1}$ and $47.95gO_2{\cdot}m^{-2}{\cdot}d^{-1}$ respectively. In conclusion, because O.S.D has extraordinary physico-chemical characteristics, it can contribute to improvement of both the waterbody and the sediment environment.

• 센서학회지
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• 제30권6호
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• pp.436-440
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• 2021

The impact of the gate length (L_g) on the DC and high-frequency characteristics of indium-rich In_0.8Ga_0.2As channel high-electron mobility transistors (HEMTs) on a 3-inch InP substrate was inverstigated. HEMTs with a source-to-drain spacing (L_SD) of 0.8 ㎛ with different values of L_g ranging from 1 ㎛ to 19 nm were fabricated, and their DC and RF responses were measured and analyzed in detail. In addition, a T-shaped gate with a gate stem height as high as 200 nm was utilized to minimize the parasitic gate capacitance during device fabrication. The threshold voltage (V_T) roll-off behavior against L_g was observed clearly, and the maximum transconductance (g_{m_max}) improved as L_g scaled down to 19 nm. In particular, the device with an L_g of 19 nm with an L_SD of 0.8 mm exhibited an excellent combination of DC and RF characteristics, such as a g_{m_max} of 2.5 mS/㎛, On resistance (R_ON) of 261 Ω·㎛, current-gain cutoff frequency (f_T) of 738 GHz, and maximum oscillation frequency (f_max) of 492 GHz. The results indicate that the reduction of L_g to 19 nm improves the DC and RF characteristics of InGaAs HEMTs, and a possible increase in the parasitic capacitance component, associated with T-shap, remains negligible in the device architecture.

• 전기전자학회논문지
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• 제18권4호
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• pp.586-592
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• 2014

본 논문에서는 DT-CMOS(Dynamic Threshold voltage Complementary MOSFET) 스위칭 소자를 사용한 DC-DC Buck 컨버터를 제안하였다. 높은 효율을 얻기 위하여 PWM 제어방식을 사용하였으며, 낮은 온 저항을 갖는 DT-CMOS 스위치 소자를 설계하여 도통 손실을 감소시켰다. 제안한 Buck 컨버터는 밴드갭 기준 전압 회로, 삼각파 발생기, 오차 증폭기, 비교기, 보상 회로, PWM 제어 블록으로 구성되어 있다. 삼각파 발생기는 전원전압(3.3V)부터 접지까지 출력 진폭의 범위를 갖는 1.2MHz의 주파수를 생성하며, 비교기는 2단 증폭기로 설계되었다. 그리고 오차 증폭기는 70dB의 이득과 $64^{\circ}$의 위상여유를 갖도록 설계하였다. 또한 제안한 Buck 컨버터는 current-mode PWM 제어회로와 낮은 온 저항을 갖는 스위치를 사용하여 100mA의 출력 전류에서 최대 95%의 효율을 구현하였으며, 1mA 이하의 대기모드에도 높은 효율을 구현하기 위하여 LDO 레귤레이터를 설계하였으며, 또한 2개의 IC 보호 회로를 내장하여 신뢰성을 확보하였다.

• 전기전자학회논문지
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• 제25권2호
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• pp.350-355
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• 2021

IGBT는 MOSFET과 BJT의 구조를 동시에 포함하고 있는 전력반도체 소자이며, MOSFET의 빠른 스위칭 속도와 BJT의 고 내압, 높은 전류내량 특성을 갖고 있다. GBT는 높은 항복전압, 낮은 V_CE-SAT, 빠른 스위칭 속도, 고 신뢰성의 이상적인 파워 반도체 소자의 요구사항을 목표로 하는 소자이다. 본 논문에서는 1,200V 급 Trench Gate Field Stop IGBT의 상단 공정 파라미터인 Gate oxide thickness, Trench Gate Width, P+ Emitter width를 변화시키면서 변화하는 Eoff, V_CE-SAT을 분석하였고, 이에 따른 최적의 상단 공정 파라미터를 제시하였다. Synopsys T-CAD Simulator를 통해 항복전압 1,470V와 V_CE-SAT 2.17V, Eon 0.361mJ, Eoff 1.152mJ의 전기적 특성을 갖는 IGBT 소자를 구현하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.107-112
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• 2005

We present an AlGaN/GaN metal-insulator-semiconductor-heterostructure field effect transistor (MIS-HFET) with an $Al_2O_3-HfO_2$ laminated high-k dielectric, deposited by plasma enhanced atomic layer deposition (PEALD). Based on capacitance-voltage measurements, the dielectric constant of the deposited $Al_2O_3-HfO_2$ laminated layer was estimated to be as high as 15. The fabricated MIS-HFET with a gate length of 102 m exhibited a maximum drain current of 500 mA/mm and maximum tr-ansconductance of 125 mS/mm. The gate leakage current was at least 4 orders of magnitude lower than that of the reference HFET. The pulsed current-voltage curve revealed that the $Al_2O_3-HfO_2$ laminated dielectric effectively passivated the surface of the device.

• Journal of Korean Neurosurgical Society
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• 제41권2호
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• pp.77-81
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• 2007

Objective : In a variety of thoracolumbar diseases, corpectomy followed by interbody bone graft and anterior instrumentation has allowed direct neural decompression and reconstruction of the weight-bearing column by short segments fusion. In this study, we compared spinal stability of the two different anterior thoracolumbar instruments : Z-plate and Kaneda device representing plate and two-rods type, respectively. Methods : A retrospective review was performed for all the patients with thoracolumbar diseases or traumas treated with anterior corpectomy, autologous iliac bone graft, and fixation with instruments from 1996 to 2000. For the anterior instrumentation, Z-plate or Kaneda device was used for 24 [M:F=5:9, average age=37] and 12 [M:F=9:3, average age=41] patients, respectively. The plain AP and lateral flexion-extension films were taken immediately after surgery and at each follow-up. The sagittal and coronal Cobb's angles at the operation segments were used to observe the change of initial fixation status. The surgical time length and bleeding amount of the two groups were compared. Intra-operative and post-operative instrument associated complications were evaluated. Student t-test was used for statistical analysis and p-value less than 0.05 was considered to be significant. Results : Mean follow-up durations for Z-plate and Kaneda device were 24 and 21 months, respectively. The fusion rate was 91% for Z-plate and 100% for Kaneda device. Two cases of Z-plate group showed instrumentation failure during the follow up period, in which additional surgery was necessary. The mean differences of sagittal Cobb's angles among the AP images immediate after surgery and at follow-up were 7 and 2 degrees for Z-plate and Kaneda device, respectively [p<0.05]. The mean differences of coronal Cobb's angles were 5 and 2 degrees for Z-plate and Kaneda device, respectively [p<0.05]. No Intra-operative complication has occurred in both groups. There was no difference in surgery time and bleeding amount between two groups. Conclusion : We think that Kaneda device [rod type] is stronger than Z-plate [plate type] to keep the spinal stability after anterior thoracolumbar surgery.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1991년도 추계학술대회 논문집
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• pp.29-32
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• 1991

Non-volatile SNOSFET memory devices using CMOS 1Mbit design rule(1.2$\mu\textrm{m}$), whose channel width and length are 15${\times}$1.5$\mu\textrm{m}$, 15${\times}$1.5$\mu\textrm{m}$, 2.0${\times}$15$\mu\textrm{m}$ and length are 15${\times}$1.7$\mu\textrm{m}$, respectivley, were fabricated. And the transfer, Id-Vd and switching characteristics of the devices were investigated. As a result, the 15${\times}$1.5$\mu\textrm{m}$ device was good in the transfer characteristics and the switching characteristics were favourable, which had $\Delta$V$\sub$TH/=6.3V by appling pulse voltage of V$\sub$w/=+34V, Tw=50msec.