• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.4
• /
• pp.129-135
• /
• 1996

In this paper, the hot carrier effect and device degradation of deep submicrometer SC-PMOSFETs have been measured and characterized. It has been shown that the substrate current of a 0.15$\mu$m PMOSFET increases with increasing of impact ionization rate, and the impact ionization rate is a function of the gate length and gate bias voltage. Correlation between gate current and substrate current is investigated within the general framework of the lucky-electron. It is found that the impact ionization rate increases, but the device degradation is not serious with decreasing effective channel length. SCIHE is suggested as the possible phusical mechanism for enhanced impact ionization rate and gate current reduction. Considering the hot carrier induced device degradation, it has been found that the maximum supply voltage is about -2.6V for 0.15$\mu$m PMOSFET.

• Journal of Sensor Science and Technology
• /
• v.10 no.5
• /
• pp.292-303
• /
• 2001

This work reports the tunneling effects of the lateral field emitters. Tunneling effect is applicable to the VMFS(vacuum magnetic field sensors). VMFS uses the fact that the trajectory of the emitted electrons are curved by the magnetic field due to Lorentz force. Polysilicon was used as field emitters and anode materials. Thickness of the emitter and the anode were $2\;{\mu}m$, respectively. PSG(phospho-silicate-glass) was used as a sacrificial layer and it was etched by HF at a releasing step. Cantilevers were doped with $POCl_3(10^{20}cm^{-3})$. $2{\mu}m$-thick cantilevers were fabricated onto PSG($2{\mu}m$-thick). Sublimation drying method was used at releasing step to avoid stiction. Then, device was vacuum sealed. Device was fixed to a sodalime-glass #1 with silver paste and it was wire bonded. Glass #1 has a predefined hole and a sputtered silicon-film at backside. The front-side of the device was sealed with sodalime-glass #2 using the glass frit. After getter insertion via the hole, backside of the glass #1 was bonded electrostatically with the sodalime-glass #3 at $10^{-6}\;torr$. After sealing, getter was activated. Sealing was successful to operate the tunneling device. The packaged VMFS showed very small reduced emission current compared with the chamber test prior to sealing. The emission currents were changed when the magnetic field was induced. The sensitivity of the device was about 3%/T at about 1 Tesla magnetic field.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.7 no.2
• /
• pp.269-275
• /
• 2003

Polysilicon-oxide-nitride-oxide-silicon(SONOS) transistors were fabricated by using 0.35${\mu}{\textrm}{m}$ complementary metal-oxide-semiconductor(CMOS) process technology to realize a low voltage programmable flash memory. The thickness of the tunnel oxide, the nitride, and the blocking oxide were 2.4nm, 4.0nm, and 2.5nm, respectively, and the cell area of the SONOS memory was 1.32$\mu$$m^2$. The SONOS device revealed a maximum memory window of 1.76V with a switching time of 50ms at 10V programming, as a result of the scaling effect of the nitride. In spite of scaling of nitride thickness, memory window of 0.5V was maintained at the end of 10 years, and the endurance level was at least 105 program/erase cycles. Over-erase, which was shown seriously in floating gate device, was not shown in SONOS device.

• Journal of Information Display
• /
• v.3 no.1
• /
• pp.6-10
• /
• 2002

We have synthesized a new green Ir(III) complex fac-tris-(3-methyl-2-phenyl pyridine)iridium(III) $Ir(mpp)_3$ and fabricated phosphorescent polymer light-emitting device using it as a triplet emissive dopant in PVK. $Ir(mpp)_3$ showed absorption centered at 388 nm corresponding to the $^1MLCT$ transition as .evidenced by its extinction coefficient of the order of $10^3{\cdot}$ From the PL and EL spectra of the $Ir(mpp)_3$ doped PVK film, the emission maximum was observed at 523 nm, due to the radiative decay from the $^3MLCT$ state to the ground state, confirming a complete energy transfer from PVK to $Ir(mpp)_3$. The methyl substitution has probably caused a red shift in the absorption and emission spectrum compared to $Ir(mpp)_3$. The device consisting of a 2 % doped PVK furnished 4.5 % external quantum efficiency at 72 $cd/m^2$ (current density of 0.45 $mA/cm^2$ and drive voltage of 13.9 V) and a peak luminance of 25,000 $cd/m^2$ at 23.4 V (494 $mA/cm^2$). This work demonstrates the impact of the presence of a methyl substituent at the 3-position of the pyridyl ring of 2-phenylpyridine on the photophysical and electroluminescence properties.

• Journal of Biomedical Engineering Research
• /
• v.33 no.2
• /
• pp.89-97
• /
• 2012

The purpose of this study is to develop the guideline of the physicochemical and mechanical properties evaluation for silicone gel filled breast implants. First of all, the use and development status for silicone gel filled breast implants were investigated, and then, standard and criteria about performance evaluation established by the international organizations such as ASTM, FDA guidance and ISO were examined. To evaluate the mechanical properties, data research and testing for breaking strength, elongation, tensile set, joint intensity, silicone gel cohesion, weight loss from heating, static rupture resistance, impact resistance test, fatigue test, and gel bleed were performed. On the other hand, to evaluate the physicochemical properties, volatile matter, extent of cross linking, heavy metals, and extractable were analyzed. In this study, results for general function, mechanical properties and physicochemical properties were examined and reviewed for the accordance with international standard, and objective and standardized guideline was provided.

• Journal of the Korean Magnetics Society
• /
• v.20 no.2
• /
• pp.41-44
• /
• 2010

The Cu thickness dependence of magnetic sensitivity for the NiFe/Cu/NiFe/IrMn spin valve multilayer was investigated. The magnetic properties measured by minor MR curves for the Ta(5 nm)/NiFe(8 nm)/Cu(3.5 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm) multilayer is MR = 1.46 %, MS = 2.0 %/Oe, $H_c\;=\;2.6\;Oe$, and $H_{int}\;=\;0.1\;Oe$. The magnetic sensitivities of GMR-SV devices with ten different widths and a same length of $4.45\;{\mu}m$ by fabricated by photo lithography decreased from 0.3 %/Oe to 0.06%/Oe as from a width of $10\;{\mu}m$ to $1\;{\mu}m$.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.48 no.7
• /
• pp.1-9
• /
• 2011

Memristor is a portmanteau of "memory resistor". The resistance of memristor is changed depends on the history of electric charge that passed through the device and it is able to memorize the last resistance after turning off the power supply. This paper presents this device that has a high chance to be the next generation of commercial non-volatile memory and its behavior modeling using SPICE simulation. The memristor MOS content addressable memory (M_CAM) is also designed and simulated using the proposed behavioral model. The proposed M_CAM unit cell area and power consumption show an improvement around 40% and 96%, respectively, compare to the conventional SRAM based CAMs. The M_CAM layout is also implemented using 0.13${\mu}m$ mixed-signal CMOS process under 1.2 V supply voltage.

• Journal of Pharmaceutical Investigation
• /
• v.35 no.6
• /
• pp.403-409
• /
• 2005

For transdermal delivery of large molecular drugs such as vaccine and protein drugs, novel microneedle treatment device with roll was designed. The roll dimension is 1.43 cm diameter and 2.8 cm perimeter. Total number of microneedle on the roll is 3,360 with $230\;{\mu}m$ height and $740\;{\mu}m$ distance. The pore with $150\;{\mu}m$ depth and $35\;{\mu}m$ diameter on the skin was made by the designed microneedle device. This system could be achieved without pain. The permeation rates of FITC labelled ovalbumin (FITC-OVA, molecular weight: 45,000 g/mol) as a model protein were determined by modified Franz diffusion cells using skins of hairless mice or SD rats which were treated by using microneedle device two or four times. The average penetration fluxes of model protein increased from 674 to $872\;{\mu}g/cm^{2}{\cdot}hr$ as the number of treatment to make pore increased from two to four times. In conclusion, we confirmed the possibility of using the designed microneedle treatment device for transdermal delivery of the large molecular drugs.

• Journal of Internet Computing and Services
• /
• v.17 no.6
• /
• pp.25-31
• /
• 2016

Recently, with greatly improving the wireless communication technology, new services are created using smart sensors, i.e., machine-to-machine (M2M) and Internet of Things (IoT). In this paper, we propose a novel IoT device (IoTD) personalization method that adopt Small-cell Access Points (SAPs) to control IoTDs using user equipments (UEs), e.g., smart phones and tablet PC, from service users. First, we introduce a system architecture that consists of UE, IoTD, and SAP and propose the IoTD personalization method with two procedures, i.e., IoTD profile registration procedure and IoTD control procedure. Finally, through simulations, we evaluated the system performance of the proposed scheme and it is shown that the proposed scheme outperforms the conventional scheme in terms of the packet delay, packet loss probability, and normalized throughput.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2019.05a
• /
• pp.413-415
• /
• 2019

In this paper, we develop IoT-HiAS(IoT-Human Interactive Advertising Service) for sharing economy. The HiAS device shooting the front of the device via a webcam and recognizes the person in real time through the SSD model using MobileNet. If the number of persons above the set threshold is recognized by counting the recognized person, the advertisement is reproduced on the idle resource through the beam projector. At the same time as the advertisement is reproduced, the captured image of the advertisement start time in the front of the device and the number of recognized persons are sends the IoT server of an oneM2M-compliant HiAS server using the IoT client. When the advertisement is finish, the webcam is shooting the front of the device and the image is sends the IoT server. We implemented the IoT-based human interactive advertising service by transmitting the received data to the advertiser and the advertising producers through the SNS(Social Network Service) agent of the HiAS server.