• Nuclear Engineering and Technology
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• v.51 no.7
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• pp.1835-1841
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• 2019

The mass attenuation coefficient ${\mu}_m$ for eight rock samples having different chemical composition was simulated using the MCNP 5 code in energy range($0.002MeV{\leq}E{\leq}10MeV$). Moreover, the ${\mu}_m$ for the studied rock samples was computed theoretically using XCOM database. The comparison between simulated and computed data for all selected rock samples showed a good agreement with differences varied between 0.01 and 8%. The highest ${\mu}_m$ was found for basalt rocks M2 and M1 and the lowest one is reported for limestone rocks Dike. The simulated values of the ${\mu}_m$ then were used to calculate other important shielding parameters such as the mean free path, effective electron density and effective atomic number. The exposure buildup factor EBF was also computed for the selected rocks with the contribution of G-P fitting parameters and the highest EBF attended by the basalt sample Sill and varied between 1.022 and 744 in the energy range between ($0.015MeV{\leq}E{\leq}15MeV$) but the lowest EBF achieved by basalt sample M2 and varied between 1.017 and 491 in the same energy range.

• Explosives and Blasting
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• v.8 no.3
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• pp.3-13
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• 1990

First ot of all, under given condition such as bit gage of 36mm Drill bit with right class of jack-leg-experimental test carried out from two face of Bench, firing of each hole brought 90 degree Angle face and them measured length of Burden and charged ammount of powder as following. $ca=\frac{A}{SW}$ A=Activated Area A=nd i=m S=Peripheral length of charged, room Ca=Rock Coeffiecency d: di=Hole diameter When constructed subway of Seoul in 1980 the blasting works increased complaint of ground vibration, in order to prevent the damage to structures. Some empirical equations were made as follows on condition with Jackleg Drill (Bit Gage 36mm) and within 30 meter distance between blasting site and structures. $V=K(D/W)^{-n}$ N=1.60 - 1.78 K= 48 - 138 Project is one of contineous works to above a determination of empirical equation on the cautious blasting vibration with Crawler Drill (70-75mm) in long distance. $V=41(D/\sqrt[3]{W})^{-1.41}$ $30m\le{D}\le{100m}$ $V=124(D/\sqrt[3]{W})^{-1.66}$ $100m\le{D}\le{285m}$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.53-53
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30~100 W. AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C- V data measured at 1MHz. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and $1{\;}{\times}10^{-11}{\;}A/cm^2$. However, in case of ethylcyclohexane thin films, the minimum dielectric constant and the best leakage current were obtained to be about 3.11 and $5{\;}{\times}10^{-12}{\;}A/cm^2$.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.160-163
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• 2013

We investigated the effect of light intensity and wavelength of a solar cell device by using photoconductive atomic force microscopy (PC-AFM). The $POCl_3$ diffusion doping process was used to produce a p-n junction solar cell device based on a Poly-Si wafer and the electrical properties of prepared solar cells were measured using a solar cell simulator system. The measured open circuit voltage ($V_{oc}$) is 0.59 V and the short circuit current ($I_{sc}$) is 48.5 mA. Also, the values of the fill factors and efficiencies of the devices are 0.7% and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, was used for direct measurements of photoelectric characteristics in local instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics were observed. Results obtained through PC-AFM were compared with the electric/optical characteristics data obtained through a solar simulator. The voltage ($V_{PC-AFM}$) at which the current was 0 A in the I-V characteristic curves increased sharply up to 1.8 $mW/cm^2$, peaking and slowly falling as light intensity increased. Here, $V_{PC-AFM}$ at 1.8 $mW/cm^2$ was 0.29 V, which corresponds to 59% of the average $V_{oc}$ value, as measured with the solar simulator. Also, while light wavelength was increased from 300 nm to 1,100 nm, the external quantum efficiency (EQE) and results from PC-AFM showed similar trends at the macro scale, but returned different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.230-233
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• 2004

The stochiometric mix of evaporating materials for the $CuInS_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuInS_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.524\;{\AA}$ and $11.142\;{\AA}$, respectively. To obtain the single crystal thin films, $CuInS_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperature were 640 t and 430 t, respectively and the thickness of the single crystal thin films was $2{\mu}m$. Hall effect on this sample was measured by the method of van dot Pauw and studied on carrier density and temperature dependence of mobility. The carrier density and mobility deduced from Hall data are $9.64{\times}10^{22}/m^3,\;2.95{\times}10^{-2}\;m^2/V{\cdot}s$ at 293 K, respectively The optical energy gaps were found to be 1.53 eV at room temperature. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the thin film, we have found that the values of spin orbit coupling splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0211 eV and 0.0045 eV at 10 K, respectively. From PL peaks measured at 10K, 807.7nm (1.5350ev) mean Ex peak of the free exciton emission, also 810.3nm (1.5301eV) expresses $I_2$ peak of donor-bound exciton emission and 815.6nm (1.5201eV) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 862.0nm (1.4383eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.680-684
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• 2018

We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A $POCl_3$ diffusion doping process is used to produce a p-n junction solar cell device based on a polySi wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage($V_{oc}$) is 0.59 V and the short circuit current($I_{sc}$) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6 %, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage($V_{PC-AFM}$) at which the current is 0 A in the I-V characteristic curves increases sharply up to $18W/m^2$, peaking and slowly falling as light intensity increases. Here, $V_{PC-AFM}$ at $18W/m^2$ is 0.29 V, which corresponds to 59 % of the average $V_{oc}$ value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.38-43
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• 1994

GaAs and AlGaAs layers were grown by Molecular Beam Epitaxy (MBE) to fabricate hith performance GaAs MESFETs. Optimum growth temperatures were found to be 600$^{\circ}C$ from their Hall measurement data. MESFETs with the gate legth of 1${\mu}$m and the gate width of 100.mu.m were fabricated on the MBE-grown GaAs layters which has i-GaAs buffer layer and characterized. Knee volgate and mazimum transconductance of the devices were 1V, 224mS/mm, respectively. Cut-off frequency at on-wafer measuring pattern was measured to be 18 GHz. The MESFET with the 1${\mu}$m -thick i-Al$_{0.3}Ga_{0.7}$As buffer layer between nactive and i-GaAs was fabricated on order to reduce the leakage current which flows through the i-GaAs buffer layer. Its output resistance was 2.26 k${\Omega}$.mm which increased by a factor of 15 compared with the MESFET without i-Al$_{0.3}Ga_{0.7}$As buffer layer.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.340-343
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• 1999

In this paper, we propose a wide range PLL(Phase Locked Loop) for 64X CD-ROMs & l0X DVD-ROMs. The frequency locking range of the Proposed PLL is 75MHz~370MHz. To reduce jitters caused by large VCO gain and supply voltage noise, a new V-I converter and a differential delay cell are used in 3-stage ring VCO, respectively. The new V-I converter has a 0.6V ~ 2.5V wide input range. In addition, we propose a new charge pump which has perfect current matching characteristics for the sourcing/sinking current. This new charge pump improves the locking time and the locking range of the PLL. This Chip is implemented in 0.25${\mu}{\textrm}{m}$ CMOS process. It consumes 55㎽ in worst case with a single 2.5V power supply.

• Journal of Embryo Transfer
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• v.19 no.2
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• pp.101-112
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• 2004

Chloride($Cl^-$) channels play critical roles in cell homeostasis and its specific functions such as volume regulation, differentiation, secretion, and membrane stabilization. The presence of these channels have been reported in all kinds of cells and even in frog oocytes. These essential role of $Cl^-$­ channels in cell homeostasis possibly play any role in egg homeostasis and in the early stage of development, however, there has been no report about the presence of $Cl^-$­ channel in the mammalian oocyte. This study was performed to elucidate the presence of $Cl^-$­ channels in hamster eggs. When allowing only $Cl^-$­ to pass through the channel of the egg membrane by using impermeant cation such as N-methyl-D-glucamine(NMDG), single channel currents were recorded. These channel currents showed typical long-lasted openings interrupted by rapid flickering. Mean open $time({\tau}o)$ was 43${\pm}$10.14 ms(n=9, at 50 mV). The open probability(Po) was decrease with depolarization. The current-voltage relation showed outward rectification. Outward slop conductance(32${\pm}$5.4 pS, n=22) was steeper than the inward slop conductance(10${\pm}$1.3 pS). Under the condition of symmetrical 140 mM NaCl, single channel currents were reversed at 0 mV(n=4). This reversal potential(Erev) was shifted from 0 mV at 140 mM concentration of internal NaCl(140 mM [Na+]i) to ­9.8${\pm}$0.5 mV(n=4) at 70 mM [Na+]i and 11.5${\pm}$1.9 mV at 280 mM [Na+]i(n=4) respectively, strongly suggesting that these are single $Cl^-$­ channel currents. To examine further whether this channel has pharmacological property of the $Cl^-$­ channel, specific Cl­ channel blockers, IAA-94(Indanyloxyacetic acid-94) and DIDS(4, 4'-diisothiocyan ostillben- 2-2'disulfonic acid) were applied. IAA-94 inhibited the channel current in a dose-dependent manner and revealed a rapid and flickering block. From these electrophysiological and pharmacological resluts, we found the novel $Cl^-$­ channel present in the hamster oocyte membrane. The first identification of $Cl^-$­ channel in the hamster oocyte may give a clue for the further study on the function of $Cl^-$­ channel in the fertilization and cell differentiation.

• Analytical Science and Technology
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• v.10 no.3
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• pp.161-167
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• 1997

This is on hydrogen ion-selective memebrane electrodes which were made of tetrabenzylmethylenediamine (TBMDA), tetrabenzylethylenediamine (TBEDA), tetrabenzylpropylenediamine(TBPDA) and tetrabenzylhexylenediamine(TBHDA) as neutral carriers. Their response potentials to carbon number between amino groups showed linear selectivities to hydrogen ion in the range of pH 1~pH 9, pH 2~pH 9, pH 3~pH 9 and pH 4~pH 9 and slopes were 48mV/pH, 52mV/pH, 64mV/pH, 59mV/pH respectively. The interferences effect on the cations were measured to alkali metal ions($Li^+$, $Na^+$, $K^+$), alkaline earth metal ions ($Mg^{2+}$, $Ca^{2+}$, $Sr^{2+}$, $Ba^{2+}$), transition metals ions($Cu^{2+}$, $Ni^{2+}$, $Co^{2+}$) and anions($I^-$, $Br^-$, ${NO_3}^-$, $SCN^-$), and selectivity coefficients were measured by separate-solution method. The membrane electrode made of TBMDA among the electrodes showed the best selectivity in acidic solution.