• Title/Summary/Keyword: M.I.V

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The study of growth and characterization of $AgInSe_2$ single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy(HWE)에 의한 $AgInSe_2$단결정 박막 성장과 특성에 관한 연구)

  • 홍광준
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.2
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    • pp.197-206
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    • 1999
  • The stochiometric mixture of evaporating materials for the $AgInSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the $AgInSe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $C_0$ were 6.092 $\AA$ and 11.688 $\AA$, respectively. To obtain the single crystal thin films of AgInSe$_2$, the mixed crystal was deposited on thoroughly etched semi-insulator GaAs(100) substrate by HWE system. The source and substrate temperature were fixed to $610^{\circ}C$ and $450^{\circ}C$ respectively, and the thickness of the single thin films was obtained to 3.8 $\mu\textrm{m}$. The crystallization of single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray dirrfaction (DCXD). The Hall effect was measured by the method of van der Pauw and carrier density and mobility dependence on temperature were studied. The carrier density and mobility of $AgInSe_2$single crystal thin films deduced from Hall data are $9.58{\times}10^{22} electron/m^3,\; 3.42{\times}10^{-2}m^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInSe_2$single crystal thin film, the spin orbit coupling $\Delta$So and the crystal field splitting $\Delta$Cr were obtained to 0.29 eV and 0.12 eV at 20 K respectively. From PL peaks measured at 20 K, 881.1 nm (1.4071 eV) and 882.4 nm (1.4051 eV) mean $E_x^U$ the upper polariton and $E_x^L$ the lower polariton of the free exciton $(E_x)$, also 884.1 nm (1.402 eV) express $I_2 peak of donor-bound exciton emission and 885.9 nm (1.3995 Ev) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 887.5 nm (1.3970 eV) was analyzed to be PL peak due to DAP.

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Simulation and analysis of DC characteristics in AlGaN/GaN HEMTs on sapphire, SiC and Si substrates (Sapphire SiC, Si 기판에 따른 AlGaN/GaN HEMT의 DC 전기적 특성의 시뮬레이션과 분석)

  • Kim, Su-Jin;Kim, Dong-Ho;Kim, Jae-Moo;Choi, Hong-Goo;Hahn, Cheol-Koo;Kim, Tae-Geun
    • Journal of IKEEE
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    • v.11 no.4
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    • pp.272-278
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    • 2007
  • In this paper, we report on the 2D (two-dimensional) simulation result of the DC (direct current) electrical and thermal characteristics of AlGaN/GaN HEMTs (high electron mobility transistors) grown on Si substrate, in comparison with those grown on sapphire and SiC (silicon carbide) substrate, respectively. In general, the electrical properties of HEMT are affected by electron mobility and thermal conductivity, which depend on substrate material. For this reason, the substrates of GaN-based HEMT have been widely studied today. The simulation results are compared and studied by applying general Drift-Diffusion and thermal model altering temperature as 300, 400 and 500 K, respectively. With setting T=300 K and $V_{GS}$=1 V, the $I_{D,max}$ (drain saturation current) were 189 mA/mm for sapphire, 293 mA/mm for SiC, and 258 mA/mm for Si, respectively. In addition, $G_{m,max}$ (maximum transfer conductance) of sapphire, SiC, Si was 38, 50, 31 mS/mm, respectively, at T=500 K.

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Mathematical Model for the Production of High-purity Fructo-oligosaccharides by the Mixed-enzyme System of Fructosyltransferase and Glucose Oxidase (Fructosyltransferase와 Glucose oxidase 혼합효소계를 이용한 고순도 Fructo-oligosaccharides 생산에서 반응 메카너즘에 대한 수학적 모델)

  • 윤종원;최윤찬이민규송승구
    • KSBB Journal
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    • v.9 no.1
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    • pp.40-47
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    • 1994
  • A simplified mathematical model for the production of high-purity fructo-oligosaccharides by the mixed-enzyme system of fructosyl transferees and glucose oxidase was proposed and compared with the experimental results. The kinetic parameters including $K_m,\;V_{max}\;and\;K_{iG}$ were estimated at $40^{\circ}C$, in which $K_m$, values decreased and $K_{iG}$ and $V_{max}$ values increased compared with those of fructosyl transferees alone. The kinetics of the mixed-enzyme system was successfully described in the form of Michaelis-Menten equations. At the reasonable sucrose concentrations tested, the simulated sugar profiles were of good agreement with the experimental ones.

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Near-IR study of Nova V2468 Cyg

  • Raj, Ashish;Ashok, N.M.;Banerjee, D.P.K.;Kim, Sang Chul;Pak, Mina
    • The Bulletin of The Korean Astronomical Society
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    • v.39 no.2
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    • pp.76.1-76.1
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    • 2014
  • We present near-infrared spectroscopic and photometric observations of the nova V2468 Cyg taken from 2008 March 14 till 2008 November 11 following its outburst on 2008 March 7. The JHK spectra of the nova have been taken from the Mount Abu Infrared Observatory using the Near-Infrared Imager/Spectrometer. The early spectra are dominated by strong H I lines from the Brackett and Paschen series, Fe II, O I and C I lines, typical of Fe II type novae but after 46 days from outburst there is significant reduction in the strength of the C I lines and the spectra are dominated by He I lines. The FWHM of the Pa-beta and Br-gamma lines change from 2200-2300 km s-1 to 1700-1800 km s-1 after 12 days from outburst. Three additional small amplitude outbursts are seen near 110, 185 and 240 days in the V band light curve after the discovery. The upper limit for the ejecta mass for V2468 Cyg is estimated to be $5.2{\times}10-6Msun$.

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Field Emission Characteristics of a CNT-FEA fabricated by Screen-printing of a Photo-sensitive CNT Paste (감광성 CNT 페이스트의 스크린 프린팅법을 이용한 CNT-FEA의 전계 방출 특성)

  • Kwon Sang-Jik;Lee Sang-Heon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.1
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    • pp.75-80
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    • 2006
  • We have fabricated a carbon nanotube field emission display(CNT-FED) panel with a 2 inch diagonal size using a screen printing method and in-situ vacuum sealing technology. The field emission properties of CNT FED panel with square-type CNT emitters. As results, the square-characterized and compared with those of the line-type CNT emitters. As results, the square-type CNT emitters showed much larger emission current and more stable I-V characteristics. Light emission started to be occurred at an electric field of 3.5 V/${\mu}m$ corresponding to the anode-cathode voltage of 700 V. The vacuum level inside of the in-situ vacuum sealed panel was obtained with $1.4 {\times} 10^{-5}$ torr. The sealed panel showed the similar I-V characteristics with the unsealed one and the uniform light emission with very high brightness at a current density of $243 {\mu}A/ cm^2$ obtained by the electric field of 10 V/${\mu}m$.

Growth and Scintillation Characteristics of CsI(Br) Single Crystals (CsI(Br) 단결정의 육성과 섬광특성)

  • Oh, M.Y.;Jung, Y.J.;Lee, W.G.;Doh, S.H.;Kang, K.J.;Kim, D.S.;Kim, W.;Kang, H.D.
    • Journal of Sensor Science and Technology
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    • v.9 no.5
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    • pp.341-349
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    • 2000
  • CsI(Br) single crystals doped with 1, 3, 5 or 10 mole% $Br^-$ ions, as an activator, were grown by Czochralski method. The lattice structure of grown CsI(Br) single crystal was bcc and its lattice constant was $4.568\;{\AA}$. The absorption edge of the CsI(Br) single crystals was observed at 243 nm. The spectral range of the luminescence excited by 243 nm of wavelength was $300{\sim}600\;nm$, and its peak emission appeared at 440 nm. The luminescence intensity was maximum when CsI(Br) was doped with 3 mole % $Br^-$ ions. The energy resolutions of the CsI(Br) scintillator doped with 3 mole % $Br^-$ ions were 15.0% for $^{137}Cs$(662 keV), 13.1% for $^{54}Mn$(835 keV), and 18.0% and 6.3% for $^{22}Na$(511 keV and 1275 keV), respectively. The decay curves had fast and slow components, and the fast component was about 41 ns independent on the concentration of the $Br^-$ ions. The time resolution of CsI(Br) scintillators decreased with increasing of the concentration of $Br^-$ ions.

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AFORS HET Simulation for High Efficiency of HIT Solar Cell (AFORS HET 프로그램을 이용한 HIT Cell 태양전지 고 효율화 방안)

  • Lim, Hyun-Jung;Heo, Jung-Kyu;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.431-432
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    • 2008
  • HIT Solar Cell은 단결정 실리콘 웨이퍼가 초박막 amorphos 실리콘 층으로 싸여있는 구조이다. HIT Solar Cell에서 amorphos 실리콘의 두께와 도핑 농도는 태양전지의 효율을 결정하는 매우 중요한 요인이다. 본 논문에서는 높은 효율을 갖는 태양전지 설계를 위해 AFORS HET 프로그램을 이용하여 TCO_a-Si:H(p)_a-Si:H(i)_c-Si(n)_Al 구조를 설계했다. 후에 a-Si:H(p)의 두께와 a-Si:H(i) 의 두께를 가변하며 효율을 측정하였고, p-i-n 구조에서 n+ 층을 추가함에 따라 변하는 효율을 측정하였다. 최적화 한 결과 $V_{oc}$ = 693mV, $J_{sc}$ = 3891mA/$cm^{-2}$, FF = 8363%, $E_{ff}$ = 22.55% 의 고효율을 얻었다.

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CLASSIFICATION OF CLIFFORD ALGEBRAS OF FREE QUADRATIC SPACES OVER FULL RINGS

  • Kim, Jae-Gyeom
    • Bulletin of the Korean Mathematical Society
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    • v.22 no.1
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    • pp.11-15
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    • 1985
  • Manddelberg [9] has shown that a Clifford algebra of a free quadratic space over an arbitrary semi-local ring R in Brawer-Wall group BW(R) is determined by its rank, determinant, and Hasse invariant. In this paper, we prove a corresponding result when R is a full ring.Throughout this paper, unless otherwise specified, we assume that R is a commutative ring having 2 a unit. A quadratic space (V, B, .phi.) over R is a finitely generated projective R-module V with a symmetric bilinear mapping B: V*V.rarw.R which is non-degenerate (i.e., the natural mapping V.rarw.Ho $m_{R}$(V,R) induced by B is an isomorphism), and with a quadratic mapping .phi.: V.rarw.R such that B(x,y)=1/2(.phi.(x+y)-.phi.(x)-.phi.(y)) and .phi.(rx) = $r^{2}$.phi.(x) for all x, y in V and r in R. We denote the group of multiplicative units of R by U9R). If (V, B, .phi.) is a free rank n quadratic space over R with an orthogonal basis { $x_{1}$,.., $x_{n}$}, we will write < $a_{1}$,.., $a_{n}$> for (V, B, .phi.) where the $a_{i}$=.phi.( $x_{i}$) are in U(R), and denote the space by the table [ $a_{ij}$ ] where $a_{ij}$ =B( $x_{i}$, $x_{j}$). In the case n=2 and B( $x_{1}$, $x_{2}$)=1/2 we reserve the notation [a $a_{11}$, $a_{22}$] for the space. A commutative ring R having 2 a unit is called full [10] if for every triple $a_{1}$, $a_{2}$, $a_{3}$ of elements in R with ( $a_{1}$, $a_{2}$, $a_{3}$)=R, there is an element w in R such that $a_{1}$+ $a_{2}$w+ $a_{3}$ $w^{2}$=unit.TEX>=unit.t.t.t.

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The Preparation and Property of Dye Sensitized Solar Cells using TiO2 (TiO2를 이용한 염료감응형 태양전지의 제조 및 특성)

  • Kim, Gil-Sung;Kim, Young-Soon;Kim, Hyung-Il;Seo, Hyung-Kee;Yang, O-Bong;Shin, Hyung-Shik
    • Korean Chemical Engineering Research
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    • v.44 no.2
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    • pp.179-186
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    • 2006
  • Two types of $TiO_2$, nanotube and nanoparticle, were used for the mesoporous coatings by doctor blade technique followed by calcining at $450^{\circ}C$. The coatings were used as working materials for dye-sensitized solar cells (DSCs) later on and their photovoltaic characterization was carried out. The nanoparticle was synthesized from hydrogen titanate nanotube by hydrothermal treatment at $180^{\circ}C$ for 24 hr. The solar energy conversion efficiency (${\eta}$) of DSCs prepared by this nanoparticle reached 8.07% with $V_{OC}$ (open-circuit potential) of 0.81 V, $I_{SC}$ (short-circuit current) of $18.29mV/cm^2$, and FF (fill factor) of 66.95%, respectively. For the preparation of nanotube, the concentration of NaOH solution varied from 3 M to 5 M. In the case of DSCs fabricated with nanotubes from 3 M NaOH solution, the ${\eta}$ reached 6.19% with $V_{OC}$ of 0.77 V, $I_{SC}$ of $12.41mV/cm^2$, and FF of 64.49%, respectively. On the other hand, in the case of 5 M solution, the photovoltaic ${\eta}$ was decreased with 4.09% due to a loss of photocarriers. In conclusion, it is demonstrated that the solar energy conversion efficiency of DSCs made from $TiO_2$ nanoparticle showed best results among those under investigation.