• Title/Summary/Keyword: M.I.V

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Barrier Height from Ⅴ-Ⅰ Characteristics of Semiconductor Contact: Reaction of Absorbed Oxygen with Carbon Monoxide on ZnO (1010)

  • 김혜정;한종수
    • Bulletin of the Korean Chemical Society
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    • v.18 no.2
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    • pp.149-151
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    • 1997
  • Barrier height on the surface was monitored at 77 K by observing the inflection of V-I characteristics of ZnO(1010)-ZnO(1010) contact in the surface reaction of oxygen species with carbon monoxide. The contact showed inflections at 10-20 mV and 10-50 mV for the sample adsorbed oxygen at 298 K and 573 K, respectively. When the sample adsorbed oxygen at 573 K was exposed to carbon monoxide at 298 K and 573 K, inflections were observed at 10-40 mV and 10-30 mV, respectively. The results indicated that the adsorption of oxygen on ZnO increased the surface barrier height, and the reaction of carbon monoxide with the oxygen-preadsorbed (at 573 K) ZnO decreased the surface barrier height.

Design and Fabrication of the 0.1${\mu}{\textrm}{m}$ Г-Shaped Gate PHEMT`s for Millimeter-Waves

  • Lee, Seong-Dae;Kim, Sung-Chan;Lee, Bok-Hyoung;Sul, Woo-Suk;Lim, Byeong-Ok;Dan-An;Yoon, yong-soon;kim, Sam-Dong;Shin, Dong-Hoon;Rhee, Jin-koo
    • Journal of electromagnetic engineering and science
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    • v.1 no.1
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    • pp.73-77
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    • 2001
  • We studied the fabrication of GaAs-based pseudomorphic high electron mobility transistors(PHEMT`s) for the purpose of millimeter- wave applications. To fabricate the high performance GaAs-based PHEMT`s, we performed the simulation to analyze the designed epitaxial-structures. Each unit processes, such as 0.1 m$\mu$$\Gamma$-gate lithography, silicon nitride passivation and air-bridge process were developed to achieve high performance device characteristics. The DC characteristics of the PHEMT`s were measured at a 70 $\mu$m unit gate width of 2 gate fingers, and showed a good pinch-off property ($V_p$= -1.75 V) and a drain-source saturation current density ($I_{dss}$) of 450 mA/mm. Maximum extrinsic transconductance $(g_m)$ was 363.6 mS/mm at $V_{gs}$ = -0.7 V, $V_{ds}$ = 1.5 V, and $I_{ds}$ =0.5 $I_{dss}$. The RF measurements were performed in the frequency range of 1.0~50 GHz. For this measurement, the drain and gate voltage were 1.5 V and -0.7 V, respectively. At 50 GHz, 9.2 dB of maximum stable gain (MSG) and 3.2 dB of $S_{21}$ gain were obtained, respectively. A current gain cut-off frequency $(f_T)$ of 106 GHz and a maximum frequency of oscillation $(f_{max})$ of 160 GHz were achieved from the fabricated PHEMT\\`s of 0.1 m$\mu$ gate length.h.

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High Efficiency of Thin Film Silicon Solar Cell by using ASA Program (ASA 프로그램을 이용한 박막태양전지의 고효율화 방안)

  • Park, Jong-Young;Lee, Young-Seok;Heo, Jong-Kyu;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.437-438
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    • 2008
  • 박막태양전지에서 p-layer, i-layer, n-layer의 thickness와 doping concentration은 가장 기본이 되는 요소이다. 각 layer에서 위 두 가지 요소를 ASA simulator를 이용해서 높은 효율을 갖는 박막태양전지를 설계하기 위해 조절하였다. Simulation결과 p-layer의 thickness는 $9.5*10^{-9}m$, doping concentration은 0.2eV, i-layer의 thickness는 $4.535*10^{-7}m$, n-layer의 thickness는 $2*10^{-8}m$, doping concentration 은 0.1eV에서 최종 11.48%의 효율을 얻을 수 있었다. 본 연구를 통하여 높은 효율의 박막태양전지 설계 시에 도움이 될 수 있을 것이다.

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Design of a 2.5GHz Quadrature LC VCO with an I/Q Mismatch Compensator (I/Q 오차 보정 회로를 갖는 2.5GHz Quadrature LC VCO 설계)

  • Byun, Sang-Jin;Shim, Jae-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.2
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    • pp.35-43
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    • 2011
  • In this paper, an analysis on I/Q mismatch characteristics of a quadrature LC VCO(Voltage controlled oscillator) is presented. Based on this analysis, a new I/Q mismatch compensator is proposed. The proposed I/Q mismatch compensator utilizes an amplitude mismatch detector rather than the conventional phase mismatch detector requiring much more wide frequency bandwidth. To verify the proposed circuit, a 2.5GHz quadrature LC VCO was designed in a $0.18{\mu}m$ CMOS process and tested. Test results show that an amplitude mismatch detector achieves similar I/Q mismatch compensation performance as that of the conventional phase mismatch detector. The I/Q mismatch compensator consumes 0.4mA from 1.8V supply voltage and occupies $0.04mm^2$.

A Case of Peripheral Neuropathy after Acupuncture (의인성(醫因性) 말초신경병증(末梢神經病症) 치험(治驗) 1례(例))

  • Lee, Kyung-Min;Seo, Jung-Chul;Lim, Seong-Chul;Jung, Tae-Young;Han, Sang-Won
    • Korean Journal of Acupuncture
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    • v.21 no.3
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    • pp.137-146
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    • 2004
  • Objective : The purpose of this study is to report the patient with peripheral neuropathy, who improved by Oriental medical treatment. Methods : The patient was managed by acupuncture, moxibustion, physical treatment and herbal medicine. We checked digital infrared thermographic imaging(D.I.T.I.), electromyography(E.M.G.), nerve conduction velocity(N.C.V.), deep tendon reflex(D.T.R.), sensory recover area and range of motion(R.O.M.) of knee & ankle. Results : After 6 week treatment, clinical sign(the movement and sense of leg) of improvement was appeared. Also E.M.G., N.C.V., D.T.R. and D.I.T.I. was recovered to nearly normal range. Conclusion : The results suggest that combination of acupunture, moxibustion and herbal medicine is good method for treatment of peripheral neuropathy. But further studies may be required to concretely prove the effectiveness of this methods for treating peripheral neuropathy.

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Magnetic Hardening of Rapidly Solidified $SmFe_{7+x}M_{x}(M=Mo,\;V,\;Ti)$ Compounds (급속냉각된 $SmFe_{7+x}M_{x}(M=Mo,\;V,\;Ti)$ 화합물에서 생성된 신 강자성상)

  • Choong-Jin Yang;E. B. Park;S. D. Choi
    • Journal of the Korean Magnetics Society
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    • v.4 no.3
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    • pp.226-232
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    • 1994
  • Rapidly solidified $SmFe_{7+x}M_{x}(M=Mo,\;V,\;Ti)$ compound were found to crystallize in the ${Sm(Fe,\;M)}_{7}$ based stable magnetic phase by introducing a second transition element into the Sm-Fe binary system. The ${Sm(Fe,\;M)}_{7}$ phase exhibits the highest Curie temperatuer ($T_{c}=355^{\circ}C$) ever Known in the Sm-Fe magnetic systems with a quite high intrinsic coercivity($_{i}H_{c}=3~6\;kOe $). The ${Sm(Fe,\;M)}_{7}$ phase remains stable even after annealing if once form during the rapid solidification. The primary reason for the high coercive force is due to the fine grain size($2000~8000\;{\AA}$)of the magnetic ${Sm(Fe,\;M)}_{7}$ matrix phase, and the enhanced Curie temperature is attributed to the extended solid-solubility of the additive transition elements in Fe matrix, which leads to volume expansion of the ${Sm(Fe,\;M)}_{7}$ cell causing an enhanced coupling constant of Fe atoms.

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Synthesis and Properties about Color Stability of m-SiP-PPDFV with Difluoro Groups in Vinylene Units (비닐렌기에 플루오르기를 도입한 m-SiP-PPDFV의 합성과 색 안정성에 대한 물성)

  • Jin, Young-Eup;Suh, Hong-Suk
    • Journal of the Korean Chemical Society
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    • v.54 no.6
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    • pp.711-716
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    • 2010
  • New electroluminescent polymers with fluoro groups in vinylene units, poly(m-silylphenyl-p-phenylene-difluorovinylene) (m-SiP-PPDFV) have been synthesized by GILCH polymerization. These polymers have been used as the electroluminescent (EL) layers in single layer light-emitting diodes (LEDs) (ITO/PEDOT/polymer/Ca:Al). m-SiP-PPDFV shows PL around $\lambda_{max}$ = 452 nm and green EL around $\lambda_{max}$ = 497 nm. The current-voltage-luminance (I-V-L) characteristics of the polymers show turn-on voltages of 4.0 V approximately. Two fluoro groups were introduced on every vinylene units of m-SiP-PPV to give m-SiP-PPDFV in an attempt to increase the electron affinity of the parent polymer, and the devices show an increased color stability even with vinylene units. The color stability is attributed to the electron-withdrawing effect of the fluoro groups, which protect vinylene units from oxidation in PPV derivatives. We believe that fluoro groups can be introduced in vinylene units in order to attain excellent stability of PPV derivatives.

Channel width 변화에 따른 Large Size Grain TFT의 전기적 특성 비교 분석

  • Jeong, U-Jeong;Lee, Won-Baek;Jo, Jae-Hyeon;Lee, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.61-61
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    • 2009
  • P-type SGS-TFTs with 10 ${\mu}m$ channel length and two channel widths; $W_1=5{\mu}m$ and $W_2=10{\mu}m$ which has gate insulator made of 20nm $SiO_2$ and 80nm SiNx was fabricated and the electrical properties of them were measured. The field-effect mobility was increased from 95.84 to 104.19 $cm^2/V-s$ and threshold voltage also increased from -0.802 V to -0.954 V, when channel width is increased from5 ${\mu}m$ to 10 ${\mu}m$. Subthreshold swing decreased from 0.418 to 0.343 V/dec and $I_{on/off}$ ratio increased from $4.77{\times}10^7$ to $7.30{\times}10^7$.

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WEAKLY (m, n)-CLOSED IDEALS AND (m, n)-VON NEUMANN REGULAR RINGS

  • Anderson, David F.;Badawi, Ayman;Fahid, Brahim
    • Journal of the Korean Mathematical Society
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    • v.55 no.5
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    • pp.1031-1043
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    • 2018
  • Let R be a commutative ring with $1{\neq}0$, I a proper ideal of R, and m and n positive integers. In this paper, we define I to be a weakly (m, n)-closed ideal if $0{\neq}x^m\;{\in}I$ for $x{\in}R$ implies $x^n{\in}I$, and R to be an (m, n)-von Neumann regular ring if for every $x{\in}R$, there is an $r{\in}R$ such that $x^mr=x^n$. A number of results concerning weakly(m, n)-closed ideals and (m, n)-von Neumann regular rings are given.