• Journal of the Korean Chemical Society
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• v.43 no.2
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• pp.182-192
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• 1999

The new GD/ICP-AES quick change over system has been developed and characterized. Within less than 15 minutes, ICP-AES could be switched to GD-AES and vise a versa. As a result, both solid and liquid samples could be analyzed in a very short period of time by the ICP/GD-AES quick change over system developed in our laboratory. The influences of the experimental variables, such as flow rate of coolant gas, flow rate of auxiliary gas, flow rate of sample carrier gas, sampling depth, orifice size of sampling cone, and rf (radio frequency) power on emission intensity have been presented. The detection limits of Cd(I) 228.8 nm, Mn (II) 257.61 nm, and Fe(II) 259.95 nm were found to be 3.86, 1.49, and 5.79 ppb, respectively. And linealities of the calibration curves were measured to be unity.

• Analytical Science and Technology
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• v.15 no.4
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• pp.335-340
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• 2002

An analytical method has been developed to determine multi-elements in human hair samples by inductively coupled plasma mass spectrometry (ICP-MS). 0.05 g of hair sample was added to the Teflon digestion bomb together with 1.5 mL of nitric acid and an appropriate amount of In as an internal standard. The sample was then decomposed in the microwave digestion system. The hair certified reference material, GBW 09101, was analyzed for the validation of the analytical method. The determined values were in good agreement with the certified values within the uncertainty range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.921-926
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• 2001

The link for the Superconducting Flux Flow Transistor (SFFT) which is based on the flux flow has been fabricated by the ICP etching methods. The channel width and the thickness of the SFFT were a 3 ${\mu}$m and about 300 nm, respectively. The superconducting characteristic of the link was measured by the x-ray diffraction and the E.D.S.. The SFFT etched by ICP showed an I-V characteristic like the three terminal transistor.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.891-894
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• 1999

ICP reactor produces high-density and high-uniformity plasma in large area, are has excellent characteristic of direction in the case of etching. Until now, many algorithms used one mesh method. These algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously. And difficult consider am-bipolar drift effect.

• Analytical Science and Technology
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• v.14 no.5
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• pp.416-421
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• 2001

The optimization of the reductant and acid concentration for stannane($SnH_4$) generation was investigated by using a continuous flow hydride generator combined with an inductively coupled plasma-atomic emission spectrometer. Several different prereductants were studied to remove the interfering effect of fluoride ion on the hydride generating of tin. The optimum acid concentration was 0.5-1.0 M for the 1-2% $NaBH_4$ and 1.0 M NaOH and the interfering effect of fluoride ion was minimized using boric acid and L-cysteine mixed solution as a prereductant. The reconveries of tin at 20 ng/mL level in the solution containing fluoride ion were 100~108 %.

• Bulletin of the Korean Chemical Society
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• v.26 no.12
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• pp.1991-1995
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• 2005

Sensitivity factors of elements by a glow discharge mass spectrometry (GD-MS) were intensively investigated and compared with a laser ablation inductively coupled plasma-mass spectrometry (ICP-MS). In case of copper matrix, the sensitivity factor by GD-MS generally decreases with the increase of the mass number of element. The details are a little different between each data measured by Faraday and multiplier detectors. The factor by a multiplier detector drastically decreases with the mass increase in the region of low mass as in Faraday detector’s case, but slowly in the high mass region. On the contrast, the sensitivity factor of solution standard by a conventional ICP-MS slowly increases with the increase of elemental mass number even though there are some exceptions such as gold and also the sensitivity factor by a laser ablation ICP MS generally increases with mass number of element in the specimen of glass type. In case of steel matrix, any definite trends could not be shown in the relationship between the GD-MS’s sensitivity factor and elemental mass.

• Nuclear Engineering and Technology
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• v.40 no.4
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• pp.311-318
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• 2008

In modem power reactors, nuclear fuels have recently reached 55,000 MWd/MtU from the initial average burnup of 35,000 MWd/MtU to reduce the fuel cycle cost and waste volume. At such high burnups, a fuel pellet produces fission products proportional to the burnup and creates a typical high burnup structure around the periphery region of the pellet, producing the so called 'rim effect'. This rim region of a highly burnt fuel is known to be ca. $200\;{\mu}m$ in width and is known to affect the fuel integrity. To characterize the local burnup in the rim region, solid sampling in the micro meter region by laser ablation is needed so that the distribution of isotopes can be determined by ICP-MS. For this procedure, special radiation shielding is required for personnel safety. In this study, we installed a radiation shielded laser ablation ICP-MS system, and a performance test of the developed system was conducted to evaluate the safe operation of instruments.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.380-381
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• 2012

Bioinspired sea urchin-like structures were fabricated on silicon by inductively coupled plasma (ICP) etching using lens-like shape hexagonally patterned photoresist (PR) patterns and subsequent metal-assisted chemical etching (MaCE) [1]. The lens-like shape PR patterns with a diameter of 2 ${\mu}m$ were formed by conventional lithography method followed by thermal reflow process of PR patterns on a hotplate at $170^{\circ}C$ for 40 s. ICP etching process was carried out in an SF6 plasma ambient using an optimum etching conditions such as radio-frequency power of 50 W, ICP power of 25 W, SF6 flow rate of 30 sccm, process pressure of 10 mTorr, and etching time of 150 s in order to produce micron structure with tapered etch profile. 15 nm thick Ag film was evaporated on the samples using e-beam evaporator with a deposition rate of 0.05 nm/s. To form Ag nanoparticles (NPs), the samples were thermally treated (thermally dewetted) in a rapid thermal annealing system at $500^{\circ}C$ for 1 min in a nitrogen environment. The Ag thickness and thermal dewetting conditions were carefully chosen to obtain isolated Ag NPs. To fabricate needle-like nanostructures on both the micron structure (i.e., sea urchin-like structures) and flat surface of silicon, MaCE process, which is based on the strong catalytic activity of metal, was performed in a chemical etchant (HNO3: HF: H2O = 4: 1: 20) using Ag NPs at room temperature for 1 min. Finally, the residual Ag NPs were removed by immersion in a HNO3 solution. The fabricated structures after each process steps are shown in figure 1. It is well-known that the hierarchical micro- and nanostructures have efficient light harvesting properties [2-3]. Therefore, this fabrication technique for production of sea urchin-like structures is applicable to improve the performance of light harvesting devices.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.900-906
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• 2001

We prepared tunnel magnetoresistance(TMR) devices of Ta($50\AA$)/NiFe($50\AA$)/IrMn(150$\AA$)/CoFe($50\AA$)/Al ($13\AA$)-O/CoFe($40\AA$)/NiFe($400\AA$)/Ta(50$\AA$) structure which has 100$\times$100 $\mu\textrm{m}^2$ junction area on $2.5\Times2.5 cm^{2}$ $Si/SiO_2$ ($1000\AA$) substrates by a inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using a ICP plasma oxidation method by varying oxidation time from 80 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We used a high resolution transmission electron microscope(HRTEM) to investigate microstructural evolution of insulating layer. The average resistance of devices increased from 16.38 $\Omega$ to 1018 $\Omega$ while MR ratio decreased from 30.31 %(25.18 %) to 15.01 %(14.97 %) as oxidation time increased from 80 sec to 360 sec. The values in brackets are calculated values considering geometry effect. By comparing cross-sectional TEM images of 220 sec and 360 sec-oxidation time, we found that insulating layer of 360 sec-oxidized was 30 % and 40% greater than that of 150 sec-oxidized in thickness and thickness variation, respectively. Therefore, we assumed that increase of thickness variation with oxidation time is major reason of MR decrease. The resistance of 80 sec-oxidized specimen was 160 k$\Omega$$\mu\textrm{m}^2$ which is appropriate for industrial needs of magnetic random access memory(MRAM) application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.361-365
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• 2003

Planar Inductively Coupled Plasma (PICP) etching of InGaP was performed in $BCl_3,\;BCl_3/Ar\;and\;BCl_3/Ne$ plasmas as a function of ICP source power ($0\;{\sim}\;500\;W$), RIE chuck power ($0\;{\sim}\;150\;W$), chamber pressure ($5\;{\sim}\;15\;mTorr$) and gas composition of $BCl_3/Ar\;and\;BCl_3/Ne$. Total gas flow was fixed at 20 sccm (standard cubic centimeter per minute). Increase of ICP source power and RIE chuck power raised etch rate of InGaP, while that of chamber pressure reduced etch rate. We also found that some addition of Ar and Ne in $BCl_3$ plasma improved etch rate of InGaP. InGaP etch rate was varied from $1580\;{\AA}/min$ with pure $BC_3\;to\;2800\;{\AA}/min$ and $4700\;{\AA}/min$ with 25 % Ar and Ne addition, respectively. Other process conditions were fixed at 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr chamber pressure. SEM (scanning electron microscopy) and AFM (atomic force microscopy) data showed vertical side wall and smooth surface of InGaP at the same condition. Proper addition of noble gases Ar and Ne (less than about 50 %) in $BCl_3$ inductively coupled plasma have resulted in not only increase of etch rate but also minimum preferential loss and smooth surface morphology by ion-assisted effect.