• Analytical Science and Technology
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• v.21 no.4
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• pp.316-325
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• 2008

An inductively coupled plasma mass spectrometry (ICP-MS) instrument equipped with flow injection-hydride generation system was used for the determination of trace arsenic in seawater sample. The accuracy in this method was verified by the analysis of certified reference materials (CRM) of seawater (CASS-4, NASS-5). The analytical results agreed with certified value within the range of uncertainty. The expanded uncertainties for CASS-4 and NASS-5 in this experiment were ranged from 6.2% to 6.8% obtained from repeated analyses of the CRMs (n=5). The detection limit of $As^+$ (m/z=74.9216) in this method was confirmed about 0.01 ug/kg. Linearity obtained from calibration curve of arsenic was excellent ($R^2=1$). The detection at $As^+$ (m/z=74.9216) and $AsO^+$ (m/z=90.9165) by using oxygen reaction gas in DRC mode was compared. Sensitivity at $AsO^+$ (m/z=90.9165) was decreased about 25-fold, but the analytical results are the same that at $As^+$ (m/z=74.9216).

• Journal of the Microelectronics and Packaging Society
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• v.9 no.2
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• pp.27-31
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• 2002

In this study, $CeO_2$ thin films were etched with an addition of $Cl_2$ gas to $Ar/CF_4$ gas mixing in an inductively coupled plasma (ICP) etcher by the etching parameter such as RF power of 700 W, chamber pressure of 15 mTorr and dc bias voltage of -200 volts. The etch rate of $CeO_2$ films was 250 $\AA$/min with an addition of 10% $Cl_2$ gas to $Ar/CF_4$ gas mixture and the selectivity to SBT film was 0.4 at that condition. The surface reactions of the etched $CeO_2$ thin films were investigated by X-ray photoelectron spectroscopy (XPS). It was analyzed that Ce peaks were mainly observed in Ce-O bonds formed $CeO_2$ or $Ce_2O_3$ compounds. Cl peaks were detected by the peaks of Cl $2p_{3/2}$ and Cl $2p_{1/2}$. Almost all of Cl atoms were combined with Ce atoms like $CeCl_x$ or $Ce_x/O_yCl_z$ compounds.

• Analytical Science and Technology
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• v.14 no.2
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• pp.103-108
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• 2001

Rare earth elements(REE) were separated by solvent extraction with tri-n-butyl phosphate(TBP) and $NaNO_3$, followed by back extraction with water. The method was applied to the determination of REE to circumvent the spectral interferences of ICP-AES analysis. The effects of the $NaNO_3$ concentration and the addition of hydrophobic solvents on the extraction efficiencies were investigated. Increases of the $NaNO_3$ concentration enhanced the extraction efficiencies of REE, and more than 95% recoveries were obtained at 5M of $NaNO_3$ concentration. On the other hand, addition of hydrophobic solvents lowered the extraction efficiencies. The method was applied to determine the REE in the monazite sample. But the precisions of the analytical results were more than 20%.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• Korean Journal of Soil Science and Fertilizer
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• v.45 no.6
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• pp.900-903
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• 2012

Cadmium is known to be very toxic to human health and can be relative easily translocated from soils in plants. Therefore, a rapid method for screening Cd in soils and crops has become more and more important. For this reason, we examined a rapid immunochromatograpy (ICG) test kit which uses antigen-antibody reaction based on immunoassay and chromatography. Soils and rice grains collected from mine waste-contaminated sites were determined for their Cd contents using this kit. For comparison purposes, 0.1 M HCl and ICP-OES were employed as a conventional extraction and determination method. Cadmium contents in rice grains determined using ICG technique were $0.46{\sim}2.39mg\;kg^{-1}$ and Cd contents determined using 0.1 M HCl and ICP-OES were $0.52{\sim}1.97mg\;kg^{-1}$. The correlation between these two Cd contents were statistically significant ($r^2$=0.930). The results of Cd contents in soils also showed a statistically significant relationship between these two methods ($r^2$=0.975). On the basis of these results, ICG technique can be applied to rapidly quantify Cd in crops and soils. However, further research is necessary to apply ICG technique for the field screening.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.507-507
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• 2013

유리기판으로 투과되는 빛들 중에는 내부 전반사나 wave-guided mode로 인하여 손실이 일어나 일반적으로 20%의 광추출 효율을 가진다. 이러한 문제점을 해결하기 위한 연구에는 Photonic Crystal과 같은 주기적인 나노 구조물이 있는데 이러한 구조물을 제작하기 위한 마스크 공정 과정은 대부분 복잡하거나 비싼 단점이 있다. 이에 본 발표에서는 마스크 없이 비정질소다라임 유리의 구조물 생성으로 광 추출 효율이 상승하는지 보고자 하였다. M-ICP (Magnetized-Induced Coupled Plasma)란 용량 결합형 플라즈마와 유도 결합형 플라즈마 두 가지 방식의 플라즈마를 이용한 것인데 용량 결합형 플라즈마를 이용해 이온이 sheath에 의해 가속되어 유리표면에 부딪히고 그에 따라 유리가 식각되는 물리적 식각을 이용하였다. 또한 이온의 밀도를 조절하기 위해 유도결합형 플라즈마 방식을 이용하여 식각률을 높였다. 화학적 식각을 위해서는 CF4와 O2혼합 가스를 이용해 F가 Si와 결합하여 SiF4가 되어 사라지고 탄소잔여물인 C는 O2와 반응하여 제거하였다. 그 결과, 랜덤한 분포를 가지는 미세한 구조물(stochastic sub-wavelength structure)을 유리 표면에 형성할 수 있었고, 또한 다양한 가스 종류와 압력, source power와 bias power, 그리고 시간을 바꿔가며 미세 구조물들을 관찰하였다. 실험 결과, 가시광선 파장 이하의 높이를 갖고 수 마이크로미터의 너비를 갖는 구조물이 전반사되는 빛을 효율적으로 추출하는 것을 산란되는 빛의 정도인 diffusive transmittance 가 기존 0%에서 15% 정도로 증가하는 것으로 스펙트로포토미터 측정을 통해 확인하였다. 이러한 유리 기판 위 구조물 생성방법을 OLED에 적용한다면 적은 비용으로 소자의 효율을 크게 향상 시킬 수 있을 것이다. 또한 본 처리 과정의 장점은 기존의 방법에 필요한 스퍼터링이나 RTA 처리 과정이 필요 없어 공정 단가 절감과 제조 공정의 단순화로 높은 생산성을 얻을 수 있으며 대면적화에도 유리하다.

• Analytical Science and Technology
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• v.12 no.6
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• pp.528-533
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• 1999

The total iodine is determined in serum, fresh milk and feed additive by ICP-MS. The preparation involves only a 25-fold dilution with a diluent by direct nebulization in the plasma. The diluent composition is $NH_4OH$(0.5% v/v)+$CH_3OH$(5% v/v) and the abundance of iodine is measured at m/z=127. The calibration curve was linear over the ranges $0-100{\mu}g/L$ with $R^2=0.99$ for iodine. The detection limit of this method is $0.084{\mu}g/L$ for iodine. The relative error range of milk powder SRM in optimum condition is 2.30%-4.73%. The concentration ranges of iodine in the serum, fresh milk, feed additive were $12.4-40.2{\mu}g/L$, < 0.01-3.11 mg/L, < $10^{-7}-2.60g/kg$ respectively.

• Journal of Korean Society of Environmental Engineers
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• v.30 no.6
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• pp.673-679
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• 2008

In this study, Mesoporous silica were prepared from hydrothermal synthesis using gel mixture of tetraethylorthosilcate (TEOS) as silica source and cetyltrimethylammonium bromide(CTMABr) as a template. In the optimum synthesis cause, molar ratio of template and silica changed. The surface and structure properties of Mesoporous silica were determined by XRD, SEM, and BET. N$_2$ adsorption isotherm characteristics, including the specific surface area(S$_{BET}$), total pore volume(V$_T$), and average pore diameter(D$_{BJH}$), were determined by BET. Also, the adsorption character of Pb(II) and Cd(II) ion on Mesoporous silica were measured using ICP. As a result, a SBET of 100$\sim$1,500 m$^2$/g was determined from the N$_2$ adsorption isotherm. Also, the average pore diameter of 2$\sim$4 nm. The adsorption of Pb ion and Cd ion on Mesoporous silica become different depending on the pH of solution. The adsorption amount of Mesoporus silica had higher than that of silicagel.

• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.915-920
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• 1996

Fine mullite precursor was prepared by colloidal sol-gel processes. Aluminum isopropoxide $[Al(i-OC_3H_7)_3]$ as a starting material of $Al_2O_3$ and silicic acid extracted by THF from sodium silicate as a starting material of $SiO_2$ were used. Sodium silicate was first acidified by dilute sulfuric acid to form silicic acid. ; followed by extraction using THF, Mullite precursor was synthesized by sol-gel processes from aluminum isopropoxide and sillicic acid considering the degree of extraction of Si and the removal efficiency of Na. The impurity content of silicic acid extracted by THF was below 0.04% Synthetic mullite precursor consisted of $3Al_2O_3{\cdot}2SiO_2$ and showd spherical particles of $0.05{\mu}m$ diameter and below 0.462% of impurites. The mullite precursor was characterized by EDS, XRD, TG/DSC SEM, FT-IR spectroscopy ICP and TEM.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.56-62
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• 1999

In this study, (Ba, Sr)$TiO_3$ thin films were etched with $Cl_2$/Ar gas mixing ratio in an inductively coupled plasma (ICP) by varying the etching parameter such as rf power, dc bias voltage, and chamber pressure. The etch rate was 56 nm/min under $Cl_2$/($Cl_2$+Ar) gas mixing ratio of 0.2, rf power of 600 W, dc bias voltage of 250 V, and chamber pressure of 5 mTorr. At this time, the selectivity of BST to Pt, $SiO_2$ was respectively 0.52, 0.43. The surface reaction of the etched (Ba, Sr)$TiO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS). Ba is removed by chemical reaction between Sr and Cl to remove Sr. Ti is removed by chemical reaction such as $TiCl_4$ with ease. The results of secondary ion mass spectrometer (SIMS) analysis compared with the results of XPS analysis and the results were the same.