• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.85-90
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• 2007

This paper presents the growth conditions and characteristics of polycrystalline 3C-SiC (silicon carbide) thin films for M/NEMS applications related to harsh environments. The growth of the 3C-SiC thin film on the oxided Si wafers was carried out by APCVD using HMDS (hexamethyildisilane: $Si_{2}(CH_{3})_{6})$ precursor. Each samples were analyzed by XRD (X-ray diffraction), FT-IR (fourier transformation infrared spectroscopy), RHEED (reflection high energy electron diffraction), GDS (glow discharge spectrometer), XPS (X-ray photoelectron spectroscopy), SEM (scanning electron microscope) and TEM (tunneling electro microscope). Moreover, the electrical properties of the grown 3C-SiC thin film were evaluated by Hall effect. From these results, the grown 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therefore, the 3C-SiC thin film is suitable for extreme environment, Bio and RF M/NEMS applications in conjunction with Si fabrication technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.18-19
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• 2008

Polycrystalline(poly) 3C-SiC film is a promising structural material for M/NEMS used in harsh environments, bio and fields. In order to realize poly 3C-SiC based M/NEMS devices, the electrical properties of poly 3C-SiC film have to be optimized. The n-type poly 3C-SiC thin film is deposited by APCVD using HMDS$(Si_2(CH_3)_6)$ as single precursor and are in-situ doped using N2. Resistivity values as low as 0.014 $\Omega$cm were achieved. The carrier concentration increased with doping from $3.0819\times10^{17}$ to $2.2994\times10^{19}cm^{-3}$ and electronicmobility increased from 2.433 to 29.299 $cm^2/V{\cdot}s$.

• KIPE Magazine
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• v.14 no.1
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• pp.26-33
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• 2009

광대역 반도체중에서도 SiC(Silicon Carbide)는 우수한 전기적, 기계적, 열적, 화학적, 광학적 그리고 생체 적합성 등으로 인하여 지난 반세기 동안 급속히 발전하고 있는 SiM/NEMS(Micro/Nano Electro Mechanical System)를 대처할 수 있는 차세대 M/NEMS로써 고온, 고압, 고진동, 고습도 등의 극한 환경에서도 사용 가능한 자동차, 선박, 우주항공, 산업 프랜트용 마이크로 센서 및 액츄에이터, 초고주파수 정보통신용 부품 그리고 바이오 센서 등의 분야에 크게 주목을 받고 있다. 본 논문에서는 현재 SiC M/NEMS의 연구개발 현황에 대해서 소개하고자 한다.

• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.197-201
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• 2007

The magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC grown on $SiO_{2}$/Si substrate by APCVD were investigated. Poly 3C-SiC was etched by $CHF_{3}$ gas, which can form a polymer as a function of side wall protective layers, with additive $O_{2}$ and Ar gases. Especially, it was performed in magnetron RIE, which can etch SiC at a lower ion energy than a commercial RIE system. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. The etch rate could be controlled from $20\;{\AA}/min$ to $400\;{\AA}/min$ by the manipulation of gas flow rates, chamber pressure, RF power, and electrode gap. The best vertical structure was improved by the addition of 40 % $O_{2}$ and 16 % Ar with the $CHF_{3}$ reactive gas. Therefore, poly 3C-SiC etched by magnetron RIE can expect to be applied to M/NEMS applications.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.457-461
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on $SiO_{2}$ and AlN substrates, respectively. The crystallinity and the bonding structure of poly 3C-SiC grown on each substrate were investigated according to various growth temperatures. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD and FT-IR by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_{2}$ and AlN were not different. However, their electron mobilities were $7.65{\;}cm^{2}/V.s$ and $14.8{\;}cm^{2}/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_{2}$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.462-466
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• 2007

Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers, in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. The columnar structure of AlN thin films was observed by FE-SEM. X-ray diffraction pattern proved that the grown AlN film on 3C-SiC layers had highly (002) orientation with low value of FWHM (${\Theta}=1.3^{\circ}$) in the rocking curve around (002) reflections. These results were shown that almost free residual stress existed in the grown AlN film on 3C-SiC buffer layers from the infrared absorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.194-194
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• 2009

3C-SiC thin films are widely used in extreme environments, radio frequency (RF) environments, and bio-materials for micro/nano electronic mechanical systems (M/NEMS). The mechanical properties of 3C-SiC thin films need to be considered when designing M/NEMS, so Young's Modulus and the hardness need to be accurately measured. Young's Modulus and the hardness are influenced by N-doping. In this paper, we show that the mechanical properties of poly (polycrystalline) 3C-SiC thin films are influenced by the N-doping concentration. Furthermore, we measure the mechanical properties of 3C-SiC thin films for N-doping concentrations of 1%, 3%, and 5%, by using nanoindentation. For films deposited using a 1% N-doping concentration, Young's Modulus and the hardness were measured as 270 GPa and 30 GPa, respectively. When the surface roughness of the thin films was investigated by using atomic force microscopy (AFM), the roughness of the 5% N-doped 3C-SiC thin film was the lowest of all the films, at 15 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.333-334
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Smart Structures and Systems
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• v.25 no.2
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• pp.219-228
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• 2020

This work presents a modified continuum model to explore and investigate static and vibration behaviors of perforated piezoelectric NEMS structure. The perforated nanostructure is modeled as a thin perforated nanobeam element with Euler-Bernoulli kinematic assumptions. A size scale effect is considered by included a nonlocal constitutive equation of Eringen in differential form. Modifications of geometrical parameters of perforated nanobeams are presented in simplified forms. To satisfy the Maxwell's equation, the distribution of electric potential for the piezoelectric nanobeam model is assumed to be varied as a combination of a cosine and linear functions. Hamilton's principle is exploited to develop mathematical governing equations. Modified numerical finite model is adopted to solve the equation of motion and equilibrium equation. The proposed model is validated with previous respectable work. Numerical investigations are presented to illustrate effects of the number of perforated holes, perforation size, nonlocal parameter, boundary conditions, and external electric voltage on the electro-mechanical behaviors of piezoelectric nanobeams.

• Journal of the Korean Society for Nondestructive Testing
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• v.32 no.1
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• pp.41-46
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• 2012

As the development of MEMS/NEMS structure and application technology the demand for an assessment of the mechanical properties have increased. The mechanical properties are mainly evaluated by using tensile test or ultrasonic wave measurement. However, the new technology have been developed such as nano-indentation, guided wave method because they have a limitation in case of a thin plate and thin film. In the study, the guided wave velocities are measured by electromagnetic-acoustic transducer(EMAT), the material properties of thin metallic foils are obtained using optimization process of the theoretical and experimental group velocity of guided wave. The Young's modulus obtained by the optimization process(201.6 GPa), nano-indentation(207.0 GPa) and literature value(203.7 GPa) of a $50{\mu}m$ thick nickel thin plate shows good agreement within 3%.