• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.10a
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• pp.454-456
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• 2017

Current and capacitance-voltage characteristics of tunnel field effect transistor (TFET) with various quantum models were investigated. Density gradient, Bohm quantum potential (BQP), and Vandort quantum correction are used with calibrating against Schrodinger-Poisson model. Drive-currents in all models. are decreased. When only BQP is used, SS and $V_{onset}$ are fixed but drive-current is decreased 3 times more than those of no quantum model. And When BQP with Vandort and density gradient are used, SS increased more than 40 mV./dec and $V_{onset}$ shifted as 0.07 eV.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.120-126
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• 2000

This paper dealt with the developed portable electric field meter which consisted of planar-type sensor, analog amplifier with gain controller, A/D convertor, and display unit. The principle of the planar-type sensor for detecting time-varying electric field of extremely low frequency (ELF) bandwidth was described, and a calibration system using cylindrical guard electrodes and parallel-plate electrodes was proposed. From the calibration experiment, the frequency bandwidth and the sensitivity of the developed electric field meter was $17[Hz]{\sim}7[kHz]$, and 4.45[mV/V/m], respectively. Also it can measure the electric field strength up to 10[kV/m], and the measured result was displayed on the liquid crystal display in digit. The electric field meter can be widely applied to measure electric field strength radiated from power lines, computers, and home appliances such as hair dryer, heater, etc.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.6
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• pp.525-535
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• 2004

In this paper, a two-phase DZRCD(Dual Zero Vector Modes RCD) technique is proposed to develope the problem of a conventional two-phase RCD-PWM (Random Centered Distribution PWM) which gives the power spectra of narrow band range in the high modulation index (M). In the proposed DZRCD technique, the zero vector $V_0$ is selected as $V_0$(111) for M$\geqq$0.8. Also, $V_0$ is selected as $V_0$(000) for the modulation indices < 0.8. For the unplementation of the proposed method, a 16-bit micro-controller Cl67 was used and the experiments were conducted with the 1.5kw induction motor under no load condition. The experimental results show that the voltage / current spectra is spread to a wide band range, and the switching noise of motor is reduced by the proposed method compared to the conventional random operation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.569-572
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• 2014

This paper presents a CMOS switched-capacitor interface circuit for MEMS capacitive sensors. It consist of a capacitance to voltage converter(CVC), a second-order ${\Sigma}{\Delta}$ modulator, and a comparator. A bias circuit is also designed to supply constant bias voltages and currents. This circuit employes the correlated-double-sampling(CDS) and chopper-stabilization(CHS) techniques to reduce low-frequency noise and offset. The designed CVC has a sensitivity of 20.53mV/fF and linearity errors less than 0.036%. The duty cycle of the designed ${\Sigma}{\Delta}$ modulator output increases about 5% as the input voltage amplitude increases by 100mV. The designed interface circuit shows linearity errors less than 0.13%, and the current consumption is 0.73mA. The proposed circuit is designed in a 0.35um CMOS process with a supply voltage of 3.3V. The size of the designed chip including PADs is $1117um{\times}983um$.

• Journal of the Korean earth science society
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• v.27 no.5
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• pp.557-568
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• 2006

We present CCD UBVI photometry for more than 10,000 stars in $20'.5{\times}20'.5$ field of the halo globular cluster M30. From a color-magnitude diagram, main sequence turnoff was obtained when $V_{TO},\;(B-V)_{TO},\;and\;(V-I)_{TO}\;are\;8.63{\pm}0.05,\;0.44{\pm}0.05\;and\;0.63{\pm}0.05$, respectively. From a (U-B)-(B-V) diagram, reddening parameter, E(B-V) equals $0.05{\pm}0.01$ and a UV color excess ${\delta}(U-B)\;is\;0.27{\pm}0.01$. The abundance is derived, where [Fe/H] equals $-2.05{\pm}0.09$ according to the photometric method and spectroscopic data. The observed luminosity function of M30 shows an excess in the number of red giants relative to the number of turnoff stars, when comparing with the predictions of canonical models. Using the Hipparcos parallaxes for subdwarfs, we estimate distance modulus, $(m-M)_o\;as\;14.75{\pm}0.12$. Using the R and R' method, we find helium abundances, Y(R) as $0.23{\pm}0.02$, Y(R') as $0.29{\pm}0.02$, respectively. Finally, the cluster' sage dispersion was deduced from 10.71 Gyr to 17 Gyr.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.320-320
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• 2012

III-V 화합물 태양전지는 실리콘, CdTe, CIGS, 염료, 및 유기 등 다른 태양전지에 비해 1sun 상 30% 이상의 고효율을 갖고 있고 앞으로도 계속 증가할 수 있는 가능성을 갖고 있다. 그 이유는 직접천이형 밴드갭, 높은 이동도 등의 고성능 물질특성과 더불어 3족과 5족의 비율을 조절함으로써 같은 결정구조를 갖고 에너지 밴드갭이 다른 물질들을 만들기에 용의하여, 태양전지 스펙트럼의 넓은 영역을 흡수할 수 있는 장점이 있기 때문이다. 그러나, 셀자체의 물질이 실리콘에 비하여 고가이므로, 고성능이 요구되는 우주 인공위성등에 적용이 되었지만, 2000년대 이후로 집광에 적용가능한 태양전지의 연구를 거듭하여 2005년부터는 값싼 프레넬 렌즈를 이용하여 1sun에 비해 500배 해당하는 빛을 셀에 집광하여 보다 효율을 증가시킴으로써 지상발전용에도 적용가능한 셀을 형성하게 되었다. 더불어 태양전지의 효율을 증가시키기 위한 개선된 구조적 변화의 시도도 많이 이루어지고 있다. 최근 보고에 의하면 실리콘 태양전지의 표면에 texture 또는 나노 구조를 주어 높은 흡수율과 낮은 반사율을 갖게 함으로써 효율을 증가시키는 사례가 많아지고, III-V 화합물 태양전지도 texturing에 의해 증가된 효율을 발표한바 있다. 본 연구에서는 태양전지의 효율을 증가시키기 위하여 III-V 화합물 태양전지 표면에 micro-hole array texture 구조를 형성한 후 나노 particle을 이용한 나노 texture 구조를 형성하였다. Photo-lithography와 chemical wet etching으로 micro-hole array texture 구조를 형성하였으며 micro-hole의 직경은 $5{\sim}20{\mu}m$, hole과 hole의 간격은 $3{\sim}15{\mu}m$로 다양하게 변화를 주었다. 형성된 micro-hole array texture 구조위에 수십 nm 크기의 particle을 만들어 chemical wet etching으로 나노 texture 구조를 형성하였다. 태양전지 표면에 texture 구조가 있는 경우와 없는 경우에 각각 효율을 측정, 비교 분석하였다.

• Journal of the Korean Electrochemical Society
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• v.13 no.2
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• pp.123-127
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• 2010

An assembled-graphite/DSA(Dimensionally Stable Anode) was prepared using graphite powder to increase durability and energy efficiency of redox flow battery and investigated its electrochemical properties in vanadium-based electrolyte. The cyclic voltammetry (CV) was carried out in the voltage range of -0.7V and 1.6V vs. SCE at 5 mV/sec scan rate to analyze vanadium redox reaction. From the CV results, the assembled-graphite/DSA electrode showed a fast couple reaction and good reversibility in 2M $VOSO_4$ + 2.5 M $H_2SO_4$ electrolyte. Therefore, it has been expected that this electrode increases power density as well as energy density of redox flow battery.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.7
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• pp.993-1000
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• 2018

This paper proposes a low-dropout voltage regulator(LDO) using self-cascode structure. The self-cascode structure was optimized by adjusting the channel length of the source-side MOSFET and applying a forward voltage to the body of the drain-side MOSFET. The self-cascode of the input differential stage of the error amplifier is optimized to give higher transconductance, but the self-cascode of the output stage is optimized to give higher output resistance, The proposed LDO using self-cascode structure was designed by a $0.18{\mu}m$ CMOS technology and simulated using SPECTRE. The load regulation of the proposed LDO regulator was 0.03V/A, whereas that of the conventional LDO was 0.29V/A. The line regulation of the proposed LDO regulator was 2.23mV/V, which is approximately three times improvement compared to that of the conventional LDO. The transient response of the proposed LDO regulator was 625ns, which is 346ns faster than that of the conventional LDO.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.6 s.360
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• pp.50-59
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• 2007

[ $0.18-{\mu}m$ ] CMOS 1.2-V 2nd-order ${\Sigma}{\Delta}$ modulator with full-feedforward topology is designed. Using full-feedforward topology makes op-amp performance requirements much less stringent, therefore it has been adopted as a good candidate for low-voltage low-power applications throughout the world. Also, ${\Sigma}{\Delta}$ modulator is designed with top-down design approach, therefore various nonideal effects of op-amp are modeled in this paper.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.10 no.5
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• pp.245-249
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• 2010

Now normally using a contact method of vehicle Inhibitor Switch that is use direct voltage level signal. This method is good solution for signal deliverly. but The contacted method have a short lifetime because of deterioration of contact surface. so we suggest to non-contacted method using magnetic sensor. The magnetic sensor is used to non-contacted method that is solution for problem of contacted method. In this paper using that of magnetic sensor feature, so we applied to Vehicle Transmitter switch that of non-contacting method. Sensor voltage outputs have variable electric potential that normally 0 mV to 150 mV, and it is depend on Switch Angle. we used two differential sin wave for switching of 5 state signal.