• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1050-1053
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• 2004

Many organic materials have been synthesized and extended efforts have been made to obtain high performance electroluminescence(EL) devices, since the first report of the light-emitting diodes based on Alq3. BECCP[bis(3-N-ethylcarbazolyl)cyanoterephthalidene] is a new luminescent material having cyano as an electron acceptor part and carbazole moiety as an electron donor part. The BECCP material shows blue PL and EL spectra of the device at about 480nm and in the ITO/BECCP/Al device shows typical rectifying diode characteristics. We have introduced Alq3 between the electrode and BECCP, and obtained more intensive rectifying diode characteristics in forward and reverse bias.

• 대한방사선치료학회지
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• 제22권2호
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• pp.123-129
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• 2010

목 적: 방사선 치료의 선량평가를 위해 사용되는 Optically stimulated luminescent dosimeters (OSLD) 선량 특성을 분석하여, 선량 측정의 유용성을 알아보고자 한다. 대상 및 방법: $NanoDot^{TM}$와 $Inlight^{TM}$MicroStar Reader, Solid Water Phantom, 의료용 선형가속기 $TRYLOGY^{(R)}$를 사용하였다. 측정 조건은 OSLD를 Solid Water Phantom의 $D_{max}$ 깊이에 위치시킨 후 SSD는 100 cm, Field size는 $10{\times}10\;cm^2$로 하고 300 MU/min으로 6 MV 광자선, 100 cGy의 방사선을 조사하였다. OSLD를 10분 마다 판독하면서 변화값을 측정하였고, OSLD에 선량을 50 cGy와 100 cGy씩 누적시켜 판독하였다. 또한 에너지 의존성은 6 MV, 15 MV, 4~20 MeV를 사용하였다. 선량률은 100~1,000 MU/min로 변화시키면서 측정하였다. 광자선 6 MV의 PDD의 변화를 측정하기 위해 OSLD와 전리함(Ionization chamber) (FC 65P-747)을 사용하였다. 결 과: 시간의 경과에 따른 OSLD의 재현성은 ${\pm}2.5%$였다. OSLD의 선량에 대한 선형성(linearity)을 평가한 결과 300 cGy까지는 선형적으로 증가하였고, 300 cGy 이상에서는 초선형적(supralinearity)으로 증가하였다. 에너지 의존성은 ${\pm}2%$ 이내였고 선량율 의존성은 ${\pm}3%$ 이내였다. 6 MV 광자선에 대하여 OSLD로 측정한 $PDD_{10}$은 66.7%, $PDD_{20}$은 38.4%였고 전리함(Ionization chamber)으로 측정한 $PDD_{10}$은 66.6%, $PDD_{20}$은 38.3%였다. 결 론: OSLD의 특성을 분석한 결과 시간, 에너지, 선량률의 변화에 따른 차이는 ${\pm}3%$ 이내였으며 전리함(Ionization chamber)과 비교한 PDD는 0.3% 이내였다. 또한 300 cGy까지는 선량이 선형적으로 증가하였다. OSLD는 여러 번 반복 측정이 가능하였고 측정과 판독이 용이하여 선량계로서 유용성을 확인하였다.

• 한국표면공학회지
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• 제50권5호
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• pp.398-404
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• 2017

In order to study the AC driving mechanism for OLED lighting, the fluorescent OLEDs were fabricated and the electroluminescent characteristics of the OLEDs by AC forward bias were analyzed. In the case of the driving method of OLED by AC forward bias under the same voltage and the same current density, degradation of luminescent characteristics for elapsed time progressed faster than in the case of the driving method by DC bias. These phenomena were caused by the peak voltage of AC forward bias which is ${\sqrt{2}}$ times higher than the DC voltage. In addition, the degradation of the OLED was accelerated because the AC forward bias had come close to the upper limit of the allowable voltage range even though the peak voltage didn't exceed the allowable range of the OLED. However, the fabricated fluorescent OLED showed little degradation of OLED characteristics due to AC forward bias from 0 V to 6.04 V. Therefore, OLED lighting by AC driving will become commercialized if sufficient luminance is realized at a voltage at which the characteristics of the OLED are not degradation by the AC driving method.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.112-117
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• 2004

$Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$(x=0.0, 0.3, 0.6, 1.0, 1.4) luminescent thin films have been grown on Si (100) substrates using pulsed laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, the surface morphology and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The photoluminescence (PL) brightness data obtained from $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$ films grown under optimized conditions have indicated that Si (100) is one of promised substrates for the growth of high quality $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$ thin film red phosphor. In particular, the incorporation of Gd into $Y_2$ $O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with $Y_{1.35}$G $d_{0.60}$ $O_3$: $E^{3+}$, whose brightness was increased by a factor of 1.95 in comparison with that of $Y_2$ $O_3$:E $u^{3+}$ films.3+/ films.films.lms.

• 한국전기전자재료학회논문지
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• 제24권1호
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• pp.27-31
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• 2011

ZnS:Mn yellow phosphors doped with Sm for white light emitting diodes were synthesized by solid state reaction method. These sample showed the characteristic X-ray diffraction patterns for main peak (110) of ZnS:Mn,Sm. Photoluminescence excitation spectra originated from $Mn^{2+}$ were ranged from 450 nm to 500 nm. The yellow emission at around 580 nm was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions in ZnS:Mn,Sm phosphors. The highest photolum inescence intensity of the phosphors under 405 nm and 450 nm excitation was obtained at Sm concentration of 1 mol%. The enhanced photoluminescent intensity in the ZnS:Mn,Sm phosphors was interpreted by energy transfer from Sm to Mn. The highest luminescent intensity of white LED was obtained at the epoxy-to-yellow phosphor ratio of 1:3. At this ratio, the CIE chromaticity of the white LED was X=0.3886 and Y=0.2928.

• 센서학회지
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• 제11권2호
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• pp.118-123
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• 2002

$ZnGa_2O_4$ 형광체 박막을 기판 온도를 $550^{\circ}C$에 고정시키고 산소 분압을 100, 200, 300 mTorr로 변화시키며 $Al_2O_3$(0001) 기판 위에 펄스 레이저 증착법을 이용하여 증착하였다. 다른 산소 분압에서 성장한 박막들의 미세 결정구조와 형광특성을 조사하였으며, 산소분압이 증가할수록 박막의 결정성이 변화하였으며 박막의 조성비가 다름을 형광특성을 통하여 알 수 있었다. 발광 스펙트럼은 460 nm에서 최고 피크값 을 나타내었으며, 300 nm에서 600 nm까지 갖는 넓은 밴드의 형광 특성을 나타내었다. 최적의 조건에서 성장된 박막의 형광 밝기를 고려해볼 때 $Al_2O_3$(0001) 기관이 우수한 $ZnGa_2O_4$ 형광체 박막을 성장시킬 수 있는 기판들 중 하나임을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.215-219
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• 2004

Metal-chelate derivatives have been investigated intensively as an emitting layer and recognize to have excellent electroluminescence(EL) properties. We synthesized new luminescent material, 1,4-dihydoxy-5,8-naphtaquinone $Aiq_3$ complex($Al_2Nq_4$) and investigated the electrical optical properties. OLED has potential candidates for information display with merits of thickness, low power and high efficiency. Although the OLED show a lot of advantages for information display, it has the limit of inorganic(metal)/ organic interface. In this study, the two methods are used to study the interface of metal/organic in OLED. First, we treated $O_2$ plasma on an ITO thin film by using RIE system, and analyzed the ingredient of ITO thin film according to change of the processing conditions. We used the RDS and the XPS for the ingredient analysis of the surface and bulk. We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by using AFM. We fabricated OLED using substrate that was treated optimum ITO surface. Second, we used the buffer layer of CuPc to improve the characteristics of the interface and the hole injection in OLED. The result of the study for electrical and optical properties by using I V L T System(Flat Panel Display Analysis System), we confirmed that the electrical properties and the luminance properties were improved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.344-344
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• 2007

본 연구에서는 X선 영상 검출기로의 적용을 위하여 $Gd_2O_3$:Eu 형광체 필름을 제작하여 X선에 대한 발광 특성을 분석하였다. $Gd_2O_3$:Eu는 저온 액상법을 이용하여 분말 형태로 제조한 후 Particle-in-binder (PIB)으로 필름 형태로 제작한 후, 도핑된 Europium(Eu)의 농도와 소결 온도에 따른 X선에 대한 발광 특성을 분석하였다. Photolumimescence (PL) spectrum에서 611nm에서 가장 높은 발광 효율을 나타내었으며, 입자의 크기가 줄어듦에 따라 610nm에서 새로운 peak가 형성 되었다. 또한 Eu의 농도에 따라서 발광 강도의 차이가 관찰되었는데, 5wt%의 도핑 농도에서 가장 높은 발광 효율을 나타냈으며, 도핑 농도에 매우 의존적인 결과를 나타냈다. 소결 온도에 따른 발광 특성 분석에서, $500^{\circ}C$에서 소결하였을 때는 623nm에서 강한 peak를 나타내는 단사정계상의 발광 peak는 거의 관찰되지 않았으나 소결 온도가 $700^{\circ}C$와 $900^{\circ}C$에서는 peak가 확인되었다. 이를 통해 $Gd_2O_3$ 모체가 대부분 입방 대칭 구조를 가지는 $Gd_2O_3$:Eu가 합성되었음을 확인할 수 있었다. 또한 소결 온도에 따른 발광 강도를 분석한 결과 $900^{\circ}C$에서 소결하였을 때 가장 높은 발광 강도를 나타냈다. Luminescent decay time 측정 결과에서 도핑된 Eu의 농도가 커질수록 Luminescent decay time이 짧아짐을 확인할 수 있었다.

• 한국재료학회지
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• 제16권12호
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• pp.761-765
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• 2006

[ $II-III_2-(S,Se)_4$ ] structured of phosphor has been used at various field because those have high luminescent efficiency and broad emission band. Among these phosphors, the europium doped $BaGa_2S_4$ was prepared by solid-state method and had high potential application due to an emissive property of UV region. Also, the common sulfide phosphors were synthesized by using injurious $H_2S\;or\;CS_2$ gas. However, in this study $BaGa_2S_4:Eu^{2+}$ phosphor in addition to excess sulfur was prepared under at 5% $H_2/95%\;N_2$ reduction atmosphere. Thus, this process could be considered as large scale synthesis because of non-harmfulness and simplification. The photoluminescence efficiency of the prepared $BaGa_2S_4:Eu^{2+}$ phosphor increased 20% than that of commercial $SrGa_2S_4:Eu^{2+}$ phosphor. The prepared $BaGa_2S_4:Eu^{2+}$ could be applied to green phosphor for white LED of three wavelengths.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.956-960
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• 2009

The characteristics of organic films can be affected by the temperature of evaporation source because the temperature of evaporation source has an effect on substrate temperature during OLED fabrication process using the thermal evaporation. To investigate the characteristics of OLED devices fabricated by using thermally damaged organic films, I-V-L and half life-time in OLED devices fabricated with various substrate temperatures were measured. During emission layer(EML) evaporation, OLED devices with a structure of ITO(100 nm)/ELM200(50 nm)/NPB(30 nm)/$Alq_3$(55 nm)/LiF(0.7 nm)/Al(100 nm) were fabricated at various substrate temperatures(room temperature, $30^{\circ}C$, $40^{\circ}C$, and $50^{\circ}C$). The characteristics of current density and luminance versus applied voltage in OLED devices fabricated shows that many electrical currents flowed and high brightness appeared at low voltage, but that the lifetime of OLED devices dropped suddenly. This phenomenon explained that the crystallization of $Alq_3$ thin film appeared owing to the substrate heating during evaporation.