• Journal of the Korean Applied Science and Technology
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• v.16 no.4
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• pp.307-311
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• 1999

Interfacial properties of electrode and organic thin layer is one of the most important factor in performing a Light Emitting Diodes(LED). Phthalocyanine copper was used as a buffer layer to improve interface characteristic, so that device efficiency was improved. In this study, LEDs were fabricated as like structures of Indium-Tin-Oxide (ITO) / N,N' -Diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) / 8-Hydroxyquinoline aluminum(Alq) / Aluminum(Al) and Indium-Tin-Oxide(ITO) / N,N'-Diphenyl-N,N' -di(m-tolyl)-benzidine(TPD) / 2-(4-Biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole(PBD) / Aluminum(Al). In these devices, CuPC was layered at electrode/organic layer interface. As position is changing and thickness is changing, devices showed characteristic luminescence efficiency and luminescence inensity respectively. We showed in this study that luminescence efficiency was improved with CuPC layer in LEDs. The efficiency of device with layer CuPC is higher than that of 2 layer CuPC. However, the luminescence of 2 layer CuPC device got higher value.

• Journal of the Korean Ceramic Society
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• v.54 no.2
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• pp.96-101
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• 2017

In this article, pure $m-LaVO_4:Eu^{3+}$ and $t-LaVO_4:Eu^{3+}$ nanocrystals were prepared by an EG-assisted hydrothermal method with regular shapes. A series of controlled experiments showed that the pH value of a mixed solution, the volume ratio of $EG/H_2O$ and the dosage of the doped $Eu^{3+}$ all had an important effect on the sizes and shapes of the final products. Furthermore, the constitutional unit of the products changed from 0D to 2D with an increase in the EG dosage. The PL results showed that $t-LaVO_4$ doped with $Eu^{3+}$ ions had better luminescence properties than $m-LaVO_4$ due to its special structure. All of these results not only expand our understanding of the luminescence properties of lanthanide orthovanadates, but they also elucidate the principles of the crystal growth.

• Bulletin of the Korean Chemical Society
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• v.30 no.5
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• pp.1157-1163
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• 2009

Complexes of Pd(btnbmtp)$Cl_2$ and Pt(btnbmptp)$Cl_2$ (btnbmtp = 2,5-bis(thiophen)-1-nonyl-3,4-bis(methylthio)- pyrrole) were prepared and their crystal structures were determined at room temperature. In the structures, the two thiophene moieties lie in cis form with an average dihedral angle of $55.26^{\circ}$ to the pyrrole frame. The luminescence properties of the free ligand and the complexes were investigated in solution and solid states. The luminescence of the compounds were not favored by substituting thiophene moieties to the pyrrole frame, compared to the unsubstituted nbmptp (nbmptp = 1-nonyl-3,4-bis(methylthio)pyrrole). In particular, thiophene substitution quenched the emission from the complexes dissolved in ,$CH_2Cl_2$ and reduced the charge transfer transitions from S atoms of the thio moieties to Pt in crystalline state, which was very characteristic of Pt(nbmptp)$Cl_2$.

• Korean Journal of Optics and Photonics
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• v.3 no.3
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• pp.183-190
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• 1992

Luminescence properties of asymmetric double quantum well structure composed of $Al_x/Ga_{1-x}$ /As AIAs/GaAs have been studied by steady state and time-resolved photoluminescence and phtoluminescence excitation spectroscopy at low temperature. Two quantum well samples with different barrier thickness (15$\AA$ and 150$\AA$) were prepared to investigate the dependence of tunneling characteristics on barrier thickness. The abscence of excitonic recombination peak from $Al_x/Ga_{1-x}$As well for the 15$\AA$ barrier sample indicates a very fast electron tunneling to GaAs well. Meanwhile, T-X transition between well and barrier is supposed to be a major route for the fast decay of luminescence from $Al_x/Ga_{1-x}$As well in the 150$\AA$ barrier sample. Time-resolved photduminescence from GaAs well of 15$\AA$ sample shows the exsitence of the rise with 100 ps which is attributed to the hole tunneling.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.29-32
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• 2007

Zinc gallate, $ZnGa_2O_4:Mn^{2+}$ co-doped with different concentrations of $Mg^{2+}$ (0.001- 0.5 mol%) was prepared by solid state synthesis method. These compositions were investigated for their photoluminescence and cathodoluminescence properties. The optimized composition $Zn_{0.990}Mg_{0.005}Ga_2O_4:Mn_{0.005}$ shows higher luminescence intensity compared to the parent phosphor. The intense green emission peak was found at 504 nm. The $Mg^{2+}$ doping does not affect much the decay time. It remains <10 ms for these compositions which make them potential candidate for application in TV screens.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.146-146
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• 2003

If rare earth ions could be activated by electrical means after introducing into an appropriate semiconductor host, it might be possible to achieve the electrically-driven optical amplifier. Futhermore, some groups report that rare earth doped semiconductor nanoparticls show the sensitized emission. In this study, we try to prepare the Er/PbS nanoparticles encaupsulated by phenyl modified silica shell via sol-gel process. Er/PbS nanoparticles were characterized by UV-vis absorption, XRD, FT-IR and TEM etc. Finally we will present the luminescence properties of Er doped PbS nanoencapsulation.

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2012.03a
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• pp.71-71
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• 2012

To control luminescence emission property, a novel series of strong fluorescent fluorin-boron complexes were synthesized in higher yield. The resulting structural analysis was completed. Small molecules with a built-in fluorine-boron core structural architecture has been attracted considered attention as the key emissive elements due to the their good properties such as bipolar charge transport and high photo efficiency. Thus, new type of fluorine-boron(F-B) complexes are designed and prepared. Changing the substituent position on fluorophore ring provided a deep understanding on the relationship between structure and optical properties.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.22-25
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• 2006

Long lasting phosphor materials are in great demand for their applications in the area of light emitting diodes (LEDs), commercial displays and warning signals. After glow longevity, brightness, photo-resistance and chemical and environment stability are most important qualities that are desired for these materials. Alumina as host lattice with various rare earth elements has been found to be good at the same time inexpensive material for the synthesis of the phosphor materials. This communication explored the effect of mixed rare earth metal on the luminescence properties of these materials for the first time. Various permutations and combinations of $Sr^{2+}$ and $Ba^{2+}$ have been investigated in order to achieve robust and high luminescence characteristics in the tailored phosphor materials.

• Journal of the Korean Institute of Navigation
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• v.25 no.4
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• pp.435-442
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• 2001

A new technique to grow a manganese-doped zinc-sulfide(ZnS：Mn) has been proposed using the repeated deposition of the Hot Wall method. The optical characteristics and crystallinity for the ZnS and ZnS：Mn thin films deposited on a quartz glass substrate by the method were investigated. Also, The ZnS：Mn thin film elcetroluminescent devices were fabricated by the method to study luminescence characteristics. All films showed (111)-oriented cubic structure. By the repeated deposition, the deposition rates were decreased, and the optical characteristics and crystalline properties were improved, which clarifies that the method is effective to deposit the thin films with good crystallinity Futhermore, the crystallinity was more improved by the doping of Mn. Only one peak emission at around 585nm originating from Mn luminescent center is observed In the photoluminescent and electroluminescent spectra of ZnS：Mn films and the luminance of the ZnS：Mn-based thin film electroluminescent devices was obtained below 60cd/$m^2$ . The optical and crystalline properties, luminescence characteristics are discussed in terms of the effects of the repeated deposition and Mn-doping.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1065-1070
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• 2003

Controlling synthesis conditions of ZnS:Cu,Al and ZnS:Cu electroluminescent phosphors we optimized particle size, color properties and efficiency. Surface properties were studied by new method and showed correlation with luminescence as shown by the analysis of EL spectra with Fok-Alentsev method. Luminance and maintenance improvement was achieved by the electron-beam annealing due to additional decomposition of $ZnS-Cu_{2}S$ solid solution and formation of centers of blue luminescence.