• Title/Summary/Keyword: Luminescence Properties

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Discharging Characteristics of Green cell Using MgO-Coated $Zn_2SiO_4:Mn^{2+}$ Phosphor in Plasma Display Panel

  • Han, Bo-Yong;Jeoung, Byung-Woo;Hong, Gun-Young;Yoo, Jae-Soo;Ha, Chang-Hun;Whang, Ki-Woong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.575-578
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    • 2004
  • The charging tendency of $Zn_2SiO_4:Mn^{2+}$ phosphor surface was modified in order to improve discharging characteristic of green cell in an ac-plasma display panel (ac-PDP). The Zinc-silicate ($Zn_2SiO_4:Mn^{2+}$) green-emitting phosphor was coated with magnesium oxide(MgO), which is viable to have positive charge on the surface. After fabricating the green cell with MgO-coated $Zn_2SiO_4:Mn^{2+}$, the electrical and optical properties in the cell were examined. It was found that the dynamic voltage margin could be increased while the address time was reduced. It may be ascribed to the change of charging tendency of $Zn_2SiO_4:Mn^{2+}$ phosphor by MgO coating, which makes it possible to stable wall-charge accumulation. When $Zn_2SiO_4:Mn^{2+}$ phosphor was coated with 1.3wt%-MgO, the address time was reduced 1.2 ${\mu}s$ and the address voltage lowered 25 V without any misfiring problem, compared to those of typical $Zn_2SiO_4:Mn^{2+}$ phosphor layer. The luminescence intensity of green cell using MgO-coated phosphor layer was also improved by 10%.

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Electrochemical and Spectrum Properties of 2,7-Naphthalene Ligand Compounds (2,7-Naphthalene Ligand Compounds의 전기화학 및 분광학적 특성)

  • Choi, Don-Soo;Kim, Mu-Young;Hyung, Kyung-Woo
    • Korean Journal of Materials Research
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    • v.19 no.9
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    • pp.510-515
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    • 2009
  • The compound of 2,6-Bis[(9-phenylcarbazolyl)ethenyl]naphthalene (BPCEN-1), 2-[6-{1-Cyano-2-(9-phenylcarbazoly)vinyl}naphthyl]-3-(9-phenylcarbazolyl)acrylonitrile (BPCEN-2), 2,6-Bis[{4-(1-naphthy l)phenylamino} styrenyl] naphthalene (BNPASN-1), 2-[6-{1-Cyano-2-(naphthylphenylaminophenyl) vinyl}naphthyl]-3-(naphthylphenylaminophenyl)acrylonitrile (BNPASN-2) was analyzed electrochemically and spectroscopically and can be obtained by bonding phenylcarbazolyl, naphthylphenylaminophenyl and -CN ligands to 2,7-naphthalene. The electrochemical and spectroscopic study resulted in the P-type (BPCEN-1, BNPASN-1) being changed to N-type (BPCEN-2, BNPASN-2) according to -CN bonding despite having the same structure. The value of band gap(Eg) was revealed to be small as HOMO had shifted higher and LUMO lower. The Eg value for naphthylphenylaminophenyl ligand was reduced because it has a smaller HOMO/LUMO value than that of phenylcarbazolyl from a structural perspective. The electrochemical HOMO/LUMO values for BPCEN-1, BPCEN-2, BNPASN-1, BNPASN-2 were measured to be 5.55eV / 2.83eV, 5.73eV / 3.06eV, 5.48eV / 2.78eV, and 5.53eV / 2.98eV, respectively. By -CN ligand, the UV max, Eg and PL max were shifted to longer wavelength in their spectra and the luminescence band could be also confirmed to be broad in the photoluminescence (PL) spectrum.

Synthesis and Luminescence Properties of Tb3+-Doped K2BaW2O8 Phosphors (Tb3+ 이온이 첨가된 K2BaW2O8 형광체의 합성 및 형광특성)

  • Jang, Kyoung-Hyuk;Koo, Jae-Heung;Seo, Hyo-Jin
    • Korean Journal of Materials Research
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    • v.22 no.9
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    • pp.489-493
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    • 2012
  • Green phosphors $K_2BaW_2O_8:Tb^{3+}$(1.0 mol%) were synthesized by solid state reaction method. Differential thermal analysis was applied to trace the reaction processes. Three endothermic values of 95, 706, and $1055^{\circ}C$ correspond to the loss of absorbed water, the release of carbon dioxide, and the beginning of the melting point, respectively. The phase purity of the powders was examined using powder X-ray diffraction(XRD). Two strong excitation bands in the wavelength region of 200-310 nm were found to be due to the ${WO_4}^{2-}$ exciton transition and the 4f-5d transition of $Tb^{3+}$ in $K_2BaW_2O_8$. The excitation spectrum presents several lines in the range of 310-380 nm; these are assigned to the 4f-4f transitions of the $Tb^{3+}$ ion. The strong emission line at around 550 nm, due to the $^5D_4{\rightarrow}^7F_5$ transition, is observed together with weak lines of the $^5D_4{\rightarrow}^7F_J$(J = 3, 4, and 6) transitions. A broad emission band peaking at 530 nm is observed at 10 K, while it disappears at room temperature. The decay times of $Tb^{3+}$ $^5D_4{\rightarrow}^7F_5$ emission are estimated to be 4.8 and 1.4 ms, respectively, at 10 and 295 K; those of the ${WO_4}^{2-}$ exciton emissions are 22 and 0.92 ${\mu}s$ at 10 and 200 K, respectively.

Control of Particle Size and Luminescence Property in Zn$_2$SiO$_4$:Mn Green Phosphor (Zn$_2$SiO$_4$:Mn 녹색형광체의 입도제어 및 발광특성)

  • Seong, Bu-Yong;Jeong, Ha-Gyun;Park, Hui-Dong
    • Korean Journal of Materials Research
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    • v.11 no.8
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    • pp.636-640
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    • 2001
  • In order to improve the optical Performance of green emitting phosphor for plasma display panel (PDP) application, the wet chemical method for preparing $Zn_{2-x}$ $SiO_4$:xMn (xi=0.02. 0.08) phosphor was designed. The spherical phosphor particles were obtained and the size can be between 0.5$\mu\textrm{m}$ and 2$\mu\textrm{m}$. The formation of phosphor, which had the willemite structure, was completed at relatively low temperature of 108$0^{\circ}C$. Also, photoluminescence Properties of the phosphors prepared were investigated under vacuum ultraviolet excitation. In particular, the emission intensity of Zn$_2$SiO$_4$:0.08Mn phosphor having the 1$\mu\textrm{m}$ of particle size was higher than that of commercial phosphor by 40%. The decay time of zinc silicate powder prepared as containing 8 mole% of manganese has been measured as 7.8ms.

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Optical Properties of Self-assembled InAs Quantum Dots with Bimodal Site Distribution (이중 크기분포를 가지는 자발형성 InAs 양자점의 광특성 평가)

  • Jung, S.I.;Yeo, H.Y.;Yun, I.;Han, I.K.;Lee, J.I.
    • Journal of the Korean Vacuum Society
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    • v.15 no.3
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    • pp.308-313
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    • 2006
  • We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under the various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.

Control of Particle Size and Luminescence Property in Zn$_2$SiO$_4$:Mn Green Phosphor (Zn$_2$SiO$_4$:Mn 녹색형광체의 입도제어 및 발광특성)

  • 성부용;정하균;박희동
    • Korean Journal of Materials Research
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    • v.11 no.8
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    • pp.363-363
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    • 2001
  • In order to improve the optical Performance of green emitting phosphor for plasma display panel (PDP) application, the wet chemical method for preparing $Zn_{2-x}$ $SiO_4$:xMn (xi=0.02. 0.08) phosphor was designed. The spherical phosphor particles were obtained and the size can be between 0.5$\mu\textrm{m}$ and 2$\mu\textrm{m}$. The formation of phosphor, which had the willemite structure, was completed at relatively low temperature of 108$0^{\circ}C$. Also, photoluminescence Properties of the phosphors prepared were investigated under vacuum ultraviolet excitation. In particular, the emission intensity of Zn$_2$SiO$_4$:0.08Mn phosphor having the 1$\mu\textrm{m}$ of particle size was higher than that of commercial phosphor by 40%. The decay time of zinc silicate powder prepared as containing 8 mole% of manganese has been measured as 7.8ms.

Syntheses of Improved Polymer/Organic Materials for Electroluminescence(EL) Device and Electro-Optical Characteristics(Ⅱ) Properties of EL Device using Squarylium Dye as Emitting Material (고기능 EL소자용 고분자/유기 재료의 합성 및 전기 광학적 특성(Ⅱ) Squarylium 색소를 이용한 EL소자의 특성)

  • Kim, Sung Hoon;Bae, Jin Seok;Hwang, Seok Hwan;Park, Lee Soon
    • Journal of the Korean Chemical Society
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    • v.41 no.3
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    • pp.144-149
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    • 1997
  • Organic electroluminescence devices(ELD) were fabricated using by molecularly doped method with N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD) as a hole transport agent, squarylium dye as an emitting agent, and side chain liquid crystalline polymer(MCH) as matrix for TPD. An indium-tin-oxide(ITO) coated glass and an Mg electrode were used as the hole and the electron injecting electrode, respectively. The highest stability of ELD was obtained by spin coating method using dichloroethane as a solvent at a polymer/TPD concentration of 0.005 wt%. For the EL cell with ITO/polymer-TPD/SQ dye/Mg structure, we achieved light red luminescence at a current of 102 mA/$cm^2$ with an applied voltage of 23 V.

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Synthesis and Properties of PCPP-Based Conjugated Polymers Containing Pendant Carbazole Units for LEDs

  • Jin, Young-Eup;Kim, Sun-Hee;Lee, Hyo-Jin;Song, Su-Hee;Kim, Yun-Na;Woo, Han-Young;Lee, Kwang-Hee;Suh, Hong-Suk
    • Bulletin of the Korean Chemical Society
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    • v.28 no.12
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    • pp.2419-2425
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    • 2007
  • New poly(cyclopenta[def]phenanthrene) (PCPP)-based conjugated copolymers, containing carbazole units as pendants, were prepared as the electroluminescent (EL) layer in light-emitting diodes (LEDs) to show that most of them have higher maximum brightness and EL efficiency. The prepared polymers, Poly(2,6-(4-(6-(Ncarbazolyl)- hexyl)-4-octyl-4H-cyclopenta[def]phenanthrene)) (CzPCPP10) and Poly(2,6-(4-(6-(N-carbazolyl)- hexyl)-4-octyl-4H-cyclopenta[def]phenanthrene))-co-(2,6-(4,4-dioctyl-4H-cyclopenta[def]phenanthrene)) (CzPCPP7 and CzPCPP5), were soluble in common organic solvents and used as the EL layer in light-emitting diodes (LEDs) of configuration with ITO/PEDOT/polymer/Ca/Al device. The polymers are thermally stable with glass transition temperature (Tg) at 77-100 °C and decomposition temperature (Td) at 423-457 °C. The studies of cyclic voltammetry indicated same HOME levels in all polymers, although the ratios of carbazole units are different. In case of PLEDs with configuration of ITO/PEDOT/CzPCPPs/Ca/Al device, The EL maximum peaks were around 450 nm, which the turn-on voltages were about 6.0-6.5 V. The maximum luminescence of PLEDs using CzPCPP10 was over 4400 cd/m2 at 6.5 V, which all of the maximum EL efficiency were 0.12 cd/A. The CIE coordinates of the EL spectrum of PLEDs using CzPCPP10 was (0.18, 0.08), which are quite close to that of the standard blue (0.14, 0.08) of NTSC.

Trans-disciplinary Approach to Molecular Modeling and Experiment in PDP Materials

  • Takaba, Hiromitsu;Serizawa, Kazumi;Onuma, Hiroaki;Kikuchi, Hiromi;Suzuki, Ai;Sahnoun, Riadh;Koyama, Michihisa;Tsuboi, Hideyuki;Hatakeyama, Nozomu;Endou, Akira;Carpio, Carlos A. Del;Kubo, Momoji;Kajiyama, Hiroshi;Miyamoto, Akira
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1441-1444
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    • 2008
  • We developed ultra-accelerated quantum chemical molecular dynamics and spectroscopic characterization simulators for development of PDP materials. By combination of these simulators, realistic structure of PDP materials is drawn on the computer. Furthermore, based on the structures, various properties such as cathode luminescence spectrum and secondary electron emission, is successfully evaluated. The strategy of "Experiment integrated Computational Chemistry" using developed simulators will presented that has the potential in being powerful tool for designing the PDP materials.

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Characteristics of Free-Standing GaN Substrates grown by Hydride Vapor Phase Epitaxy (Hydride Vapor Phase Epitaxy 법으로 성장된 Free-Standing GaN 기판의 특성에 관한 연구)

  • Kim, Hwa-Mok;Choe, Jun-Seong;O, Jae-Eung;Yu, Tae-Gyeong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.3
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    • pp.14-19
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    • 2000
  • Free-standing GaN single crystal substrates have been obtained by growing thick GaN epitaxial layers on (0001) sapphire substrates using hydride vapor phase epitaxy (HVPE) method. After growing the GaN thick film of 200 ${\mu}{\textrm}{m}$, a free-standing GaN with a size of 10 mm $\times$10 mm were obtained by mechanical polishing process to remove sapphire substrate. Crack-free GaN substrates have been obtained by GaCl pre-treatment prior to the growth of GaN epitaxial layers. Properties of free-standing GaN substrates have been compared with those of lateral epitaxial overgrowth (LEO) GaN films by double-crystal x-ray diffraction (DC-XRD), cathodoluminescence (CL) and photoluminescence (PL) measurements.

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