• Title/Summary/Keyword: Luminescence Effect

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Analysis for luminescence property about an increase quantity of silicate phosphor and reliability (Silicate 형광체 증가에 대한 발광 특성 및 신뢰성 분석)

  • Yoon, Yanggi;Jang, Joongsoon
    • Journal of Applied Reliability
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    • v.12 no.4
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    • pp.275-285
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    • 2012
  • This paper presents a changes of luminescence property for converted white LEDs with the commercially available silicate phosphor. If silicate phosphor's quantity increase step by step. luminescence property will be changing. we analyze luminescence property for these change and carry out the high temperature aging test for 7,000 hours, the high temperature and humidity aging test for 7,000 hours for reliability. LED degradation not only results in reduced light output but also in color changes. so we monitor correlated color temperature (CCT), chromaticity coordinates(x, y) and spectrum intensity. Those results suggest that humidity factor more bad effect in color changes than temperature factor and Lighting quality is related with quantity of phosphor.

Photoluminescence Up-conversion in GaAs/AlGaAs Heterostructures

  • Cheong, Hyeonsik M.
    • Journal of Korean Vacuum Science & Technology
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    • v.6 no.2
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    • pp.58-61
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    • 2002
  • Photoluminescence up-conversion in semiconductor heterostructures is a phenomenon in which luminescence occurs at energies higher than that of the excitation photons. It has been observed in many semiconductor heterostructure systems, including InP/AnALAs, CdTe/CdMgTe, GaAs/ordered-(Al)GalnP, GaAs/AIGaAs, and InAs/GaAs. In this wort, GaAs/AIGaAs heterostructures are used as a model system to study the mechanism of the up-conversion process. This system is ideal for testing different models because the band offsets are quite well documented. Different heterostructures are designed to study the effect of disorder on the up-converted luminescence efficiency. In order to study the roles of different types of carriers, the effect of doping was investigated. It was found that the up-converted luminescence is significantly enhanced by p-type doping of the higher-band-gap material.

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Room Temperature Luminescence from ion Beam or Atmospheric Pressure Plasma Treated SrTiO3

  • Song, Jin-Ho;Seok, Jae-Gwon;Yeo, Chang-Su;Lee, Gwan-Ho;Song, Jong-Han;Sin, Sang-Won;Choe, Jin-Mun;Jo, Man-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.530-531
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    • 2013
  • 3 MeV protonirradiated SrTiO3 (STO) single crystal exhibits a blue and green mixed luminescence. However, the same proton irradiated STO deposited with very thin Pt layer does not show any luminescence. This Pt layer involved in preventing the damage caused by arcingthat comes from tens of kV surface voltage build-up due to secondary electron induced charge up at the surface of insulator during ion beam irradiation. It implies that luminescence of ion irradiated STO originated from the modified STO surface layer caused by arcing rather than direct ion beam irradiation effect. Atmospheric pressure plasma, a simple and cost-effective method, treated STO also exhibits the same kind of blue and green mixed luminescence as the ion beam treated STO, because this plasma also creates a surface damage layer by arcing.

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Room-Temperature Luminescence from Ion Beam or Atmospheric Pressure Plasma-Treated SrTiO3

  • Song, J.H.;Choi, J.M.;Cho, M.H.;Choi, E.J.;Kim, J.;Song, J.H.
    • Applied Science and Convergence Technology
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    • v.23 no.5
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    • pp.261-264
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    • 2014
  • $SrTiO_3$ (STO) single crystal irradiated with a 3-MeV proton beam exhibits blue and green mixed luminescence. However, the same proton beam when used to irradiate STO with a very thin layer of deposited Pt does not show any luminescence. This Pt layer prevents any damage which may otherwise be caused by arcing, which stems from the accumulated surface voltage of tens of kV due to the charge induced by secondary electrons on the surface of the insulator during the ion beam irradiation process. Hence, the luminescence of ion-irradiated STO originates from the modification of the STO surface layer caused by arcing rather than from any direct ion beam irradiation effect. STO treated with atmospheric-pressure plasma, a simple and cost-effective method, also exhibits the same type of blue and green mixed luminescence as STO treated with an ion beam, as the plasma also creates a layer of surface damage due to arcing.

Photoluminescence Enhancement of Y2O3:Eu3+ Red Phosphor Prepared by Spray Pyrolysis using Aliovalent Cation Substitution and Organic Additives (이가 양이온 금속 친환 및 유기 첨가제를 이용하여 분무열분해법으로 제조된 Y2O3:Eu3+ 적색 형광체의 휘도 개선)

  • Min, Byeong Ho;Jung, Kyeong Youl
    • Journal of Powder Materials
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    • v.27 no.2
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    • pp.146-153
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    • 2020
  • The co-doping effect of aliovalent metal ions such as Mg2+, Ca2+, Sr2+, Ba2+, and Zn2+ on the photoluminescence of the Y2O3:Eu3+ red phosphor, prepared by spray pyrolysis, is analyzed. Mg2+ metal doping is found to be helpful for enhancing the luminescence of Y2O3:Eu3+. When comparing the luminescence intensity at the optimum doping level of each Mg2+ ion, the emission enhancement shows the order of Zn2+ ≈ Ba2+ > Ca2+ > Sr3+ > Mg2+. The highest emission occurs when doping approximately 1.3% Zn2+, which is approximately 127% of the luminescence intensity of pure Y2O3:Eu3+. The highest emission was about 127% of the luminescence intensity of pure Y2O3:Eu3+ when doping about 1.3% Zn2+. It is determined that the reason (Y, M)2O3:Eu3+ has improved luminescence compared to that of Y2O3:Eu3+ is because the crystallinity of the matrix is improved and the non-luminous defects are reduced, even though local lattice strain is formed by the doping of aliovalent metal. Further improvement of the luminescence is achieved while reducing the particle size by using Li2CO3 as a flux with organic additives.

Luminescence of orange-emitting ZnS:Mn,Cu,Cl for EL device

  • Lee, Hak-Soo;Han, Sang-Do;Gwak, Ji-Hye;Han, Chi-Hwan;Kim, Jung-Duk
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1093-1095
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    • 2006
  • An orange-emitting phosphor for inorganic electroluminescent device has been studied. Cu and Cl were co-doped in Mn-doped ZnS for a high-performing phosphor. The effect of $Mn^{2+}-doping$ concentration as well as $Mg^{2+}-sensitizer$ addition on the luminescence characteristics has been investigated.

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Photophysical Properties of Chlorotriethylphosphinegold(I)

  • Kang, Jun-Gill;Jeong, Yong-Kwang;Oh, Sung-Il;Kim, Hyun-Jun;Park, Chang-Moon;Tiekink, Edward R.R.
    • Bulletin of the Korean Chemical Society
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    • v.31 no.8
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    • pp.2151-2157
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    • 2010
  • Spectroscopic and quantum mechanical studies of the Et3PAuCl complex were performed to characterize the effect of aurophilicity on the optical properties. When excited with UV light at low temperature, the crystalline complex produced a deep luminescence in both the blue (high-energy) and red (low-energy) regions of the spectrum. The intensity of the low-energy luminescence was markedly reduced in the powdered state and quenched in the solution state. Time-dependent density functional theory (TD-DFT) calculations on electronic structures of both the ground and excited states of aggregates $[Et_3PAuCl]_n$ (n = 1 - 3) indicated that the low-energy luminescence was attributable to Au-centered transitions, which are significantly affected by aurophilic interactions. By contrast, the high-energy luminescence appeared to be independent of the state of the complex and was strongly associated with the charge transfer from Cl to Au.

Buffer Effect of Copper Phthalocyanine(CuPC) (카퍼 프탈로시아닌의 완충효과)

  • Kim, Jung-Hyun;Shin, Dong-Muyng;Shon, Byoung-Choung
    • Journal of the Korean Applied Science and Technology
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    • v.16 no.4
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    • pp.307-311
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    • 1999
  • Interfacial properties of electrode and organic thin layer is one of the most important factor in performing a Light Emitting Diodes(LED). Phthalocyanine copper was used as a buffer layer to improve interface characteristic, so that device efficiency was improved. In this study, LEDs were fabricated as like structures of Indium-Tin-Oxide (ITO) / N,N' -Diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) / 8-Hydroxyquinoline aluminum(Alq) / Aluminum(Al) and Indium-Tin-Oxide(ITO) / N,N'-Diphenyl-N,N' -di(m-tolyl)-benzidine(TPD) / 2-(4-Biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole(PBD) / Aluminum(Al). In these devices, CuPC was layered at electrode/organic layer interface. As position is changing and thickness is changing, devices showed characteristic luminescence efficiency and luminescence inensity respectively. We showed in this study that luminescence efficiency was improved with CuPC layer in LEDs. The efficiency of device with layer CuPC is higher than that of 2 layer CuPC. However, the luminescence of 2 layer CuPC device got higher value.

Development of Ink-Jet Head Controller for Electro-Luminescence Display (유기 EL 디스플레이 생산 공정을 위한 잉크젯헤드 제어시스템 구현)

  • Jung, S.U.;Lee, H.S.;Ryoo, J.H.;Park, J.S.;Chung, M.J.
    • Proceedings of the KIEE Conference
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    • 2004.11c
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    • pp.623-625
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    • 2004
  • In Electro-Luminescence Display making process, it is necessary to do high molecule patterning effectively. Recently, one of the most effective way is the patterning method using Ink-Jet head controller. To maximize the effect, it is needed to control each channel of Ink-Jet head and develop that controller. Thus, we implement the Ink-Jet Head Controller which can control the parameters of 128 fire pulses independently, improve the accuracy of patterns more than 100 times previous ones, and apply random patterns.

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