• Bulletin of the Korean Chemical Society
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• v.34 no.8
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• pp.2375-2380
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• 2013

Two metal-organic frameworks based on the connectivity co-effect between rigid benzenedicarboxylic acid and bridging ligand have been synthesized $[Zn_2(3-NO_2-bdc)_2(4,4'-bpy)_2H_2O]_n$ (1), $[Co(3-NO_2-bdc)(4,4'-bpy)H_2O]_n$ (2) (where $3-NO_2-bdcH_2$ = 3-nitro-1,2-benzenedicarboxylic acid, 4,4'-bpy = 4,4'-bipyridine). The two novel complexes were characterized by IR spectrum, elemental analysis, fluorescent properties, thermogravimetric analysis, single-crystal X-ray diffraction and powder X-ray diffraction (PXRD). X-ray structure analysis reveals that 1 and 2 are two-dimensional (2D) network structures. Complex 1 and complex 2 belong to triclinic crystal with P-1 space group. The luminescence measurements reveal that two complexes exhibit good fluorescent emissions in the solid state at room temperature. Also, thermal decomposition process and powder X-ray diffraction of complexes were investigated.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.295-298
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• 2011

ZnS:Mn, Dy yellow phosphors for White Light Emitting Diode were synthesized by a solid state reaction method using ZnS, $MnSO_4{\cdot}5H_2O$, S and $DyCl_3{\cdot}6H_2O$ powders as starting materials. The mixed powder was sintered at $1000^{\circ}C$ for 4 h in an air atmosphere. The photoluminescence of the ZnS:Mn, Dy phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn, Dy phosphors was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions. The highest photoluminescence intensity of the ZnS:Mn, Dy phosphors under 450 nm excitation was observed at 4 mol% Dy doping. The enhanced photoluminescence intensity of the ZnS:Mn, Dy phosphors was explained by energy transfer from $Dy^{3+}$ to $Mn^{2+}$. The CIE coordinate of the 4 mol% Dy doped ZnS:Mn, Dy was X = 0.5221, Y = 0.4763. The optimum mixing conditions for White Light Emitting Diode was obtained at the ratio of epoxy : yellow phosphor = 1:2 form CIE coordinate.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.21-26
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• 2002

In order to search new phosphors for plasma display panel(PDP), phosphate hosts which has a host excitation band at around 150nm were prepared and their luminescent properties were investigated. In the preparation of $YPO_4: Eu\; and\; (Y,Gd)PO_4: Eu$ phosphors, the effect of oxide and oxalate starting materials on prepared phosphors were compared in terms of relative emission intensities and particle characteristics. The results showed that oxalate starting materials gave better performance in emission intensities and smaller size and more round shape phosphors which would be more applicable for high resolution display. Additionally, Gd, V, Nb and Ta ions were doped to $YPO_4:Eu$ and the luminescent properties of the resulant solid solutions were investigated to find efficient sensitizer. Among these ions, Gd, V and Nb ions increased the emission intensities of parent phosphor to around 10%. While Nb ion gave the best result in emission intensities, CIE color coordinate were improved by doping V ion into $YPO_4:Eu$ phosphor to give x=0.6523, y=0.3406 compared to commercial sample.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.509-513
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• 2003

In the present investigation, $La^{3＋}$ and $Ce^{V}$ ions were substituted for $Y^{3＋}$ in the $YBO_3$: Tb in various concentrations. It has been found that these phosphors form solid solutions within limited concentration ranges Excitation and emission spectra under 254 nm and 147 nm were investigated for these phosphors to evaluate influences of $La^{3＋}$ and $Ce^{3＋}$ ions on brightness and CIE color coordinates. It has been observed that brightness of $(Y, La)BO_3$: Tb under 254 nm and 147 nm when $La^{3＋}$ ions are added show an increase of 2.7 times and 1.25 times, respectively. On the other hand, emission intensities of peaks in $Y_{0.8-x}$ $BO_3$: $Tb_{0.2}$ , $Ce_{x}$ show continuos decrease as $Ce^{3＋}$ / content is increased from 0 to 0.4. CIE color coordinates of prepared phosphors show yellowish green which is needed to be improved to be used for display applications.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2427-2429
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• 2005

OLED in the spotlight of display market has advantages of low power driving, self-emission and fast response. But it has disadvantages of inefficient luminescence and high power consumption. Most of PM(passive Matrix) DC-DC converters in common use is using voltage divider. This voltage divider type has some difficulties of suitable electric device selection for voltage division and of the stabilized output due to feedback current trimming. Therefore, noise analysis and power solution in OLED are important technologies having an effect on electric characteristics. In this dissertation, we have obtained the stable output by using digital signals in multi-channel DC-DC converter, the profit of power consumption reduction of driving source and economical efficiency in the PCB board size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.447-450
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• 2003

In this paper, new luminescent material, 6,11-dihydoxy-5,12-naphtacene-dione Alq3 complex (Alq2-Ncd), 1,4-dihydoxy-5,8-naphtaquinone Alq3 complex(Alq2-Nq) was synthesized. And extended efforts had been made to obtain high-performance electroluminescent(EL) devices, since the first report of organic light-emitting diodes(OLEDS) based on tris-(8-hydroxyquinoline) aluminum(Alq3). We have performed investigate characterization of the materials. Current-voltage characteristics, luminance-voltage characteristics and luminous efficiency were measured by Flat Panel Display Analysis System(Model 200-AT) at room temperature. An intensive research is going on to improve the device efficiency using the hole injection layer, different electrodes, and etc. By using the hole injection layer, the charge-injection can be controlled and the stability could be improved. This study indicates not only the sterical effect but also some other effects would be responsible for the change of the emission wavelength.

• Korean Journal of Optics and Photonics
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• v.2 no.3
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• pp.115-120
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• 1991

The effect of ZnS buffer layer on the brightness and luminous efficiency of SrS : Ce, Cl thin film EL device is investigated. The driving voltage is 210V for the cell with ZnS buffer layer, but 220V without ZnS buffer layer. The frequency range is 500 Hz-20 kHz. The. brightness is proportional to the product of the frequency and the transferred charge density within measured range. The luminous efficiency is independent on the frequency and/or driving voltage. By using the ZnS buffer layer, the luminescence characteristics of active layer is improved. The experimental data shows 0.12 Im/W of the luminous efficiency for the device with ZnS buffer layer, but 0.061m/W without ZnS buffer layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.6
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• pp.454-460
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• 2021

In this work, we synthesized alloy-core InZnP quantum dots, which are more efficient than single-core InP quantum dots, using a solution process method. The effect of synthesis conditions of alloy core on optical properties was investigated. We also investigated the conditions that make up the gradient shell to minimize defects caused by lattice mismatch between the InZnP core and ZnS is 7.7%. The stable synthesis temperature of the InZnP alloy core was 200℃. Quantum dots consisting of three layered ZnSe gradient shell and single layered ZnS exhibited the best optical property. The properties of quantum dots synthesized in 100 ml and in 2,000 ml flasks were almost equal.

• Current Optics and Photonics
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• v.3 no.2
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• pp.164-171
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• 2019

Photoluminescence (PL) properties of GaN-based light-emitting diodes (LEDs) were analyzed to study the effects of carrier leakage on the luminescence properties at room temperature. The electrical leakage and PL properties were compared for LEDs showing leakages at forward bias and an LED with an intentional leakage path formed by connecting a parallel resistance of various values. The leakages at the forward bias, which could be observed from the current-voltage characteristics, resulted in an increase in the excitation laser power density for the maximum PL efficiency (ratio of PL intensity to excitation power) as well as a reduction in the PL intensity. The effect of carrier leakages on PL properties was similar to the change in PL properties owing to a reduction of the photovoltage by a reverse current since the direction of the carrier movement under photoexcitation is identical to that of the reverse current. Valid relations between PL properties and electrical properties were observed as the PL properties deteriorated with an increase in the carrier leakage. The results imply that the PL properties of LED chips can be an indicator of the electrical properties of LEDs.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.195-201
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• 2012

$Ce^{3+}$-doped yttrium aluminum gallium garnet (YAGG:$Ce^{3+}$), which is a green-emitting phosphor, was synthesized by solid state reaction using ${\alpha}$-phase or ${\gamma}$-phase of nano-sized $Al_2O_3$ as the Al source. The processing conditions and the chemical composition of phosphor for the maximum emission intensity were optimized on the basis of emission intensity under vacuum UV excitation. The optimum heating temperature for phosphor preparation was $1550^{\circ}C$. Photoluminescence properties of the synthesized phosphor were investigated in detail. From the excitation and emission spectra, it was confirmed that the YAGG:$Ce^{3+}$ phosphors effectively absorb the vacuum UV of 120-200 nm and emit green light positioned around 530 nm. The crystalline phase of the alumina nanoparticles affected the particle size and the luminescence property of the synthesized phosphors. Nano-sized ${\gamma}-Al_2O_3$ was more effective for the achievement of higher emission intensity than was nano-sized ${\alpha}-Al_2O_3$. This discrepancy is considered to be because the diffusion of $Al^{3+}$ into $Y_2O_3$ lattice is dependent on the crystalline phase of $Al_2O_3$, which affects the phase transformation of YAGG:$Ce^{3+}$ phosphors. The optimum chemical composition, having the maximum emission intensity, was $(Y_{2.98}Ce_{0.02})(Al_{2.8}Ga_{1.8})O_{11.4}$ prepared with ${\gamma}-Al_2O_3$. On the other hand, the decay time of the YAGG:$Ce^{3+}$ phosphors, irrespective of the crystalline phase of the nano-sized alumina source, was below 1 ms due to the allowed $5d{\rightarrow}4f$ transition of the $Ce^{3+}$ activator.