• 한국방사선학회논문지
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• 제10권4호
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• pp.263-270
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• 2016

본 논문에서는 프랙탈 부호화시 변환식의 계수를 찾는 과정에서 블럭의 탐색 영역을 줄이기 위해 탐색 영역인 도메인블록의 특성을 화소의 밝기의 평균에 의한 클래스와 분산에 의한 클래스로 분류하여 리스트를 구성한 후 레인지블록과 같은 클래스를 가지는 도메인블록만 검색하도록 하면서 도메인블럭 탐색시 1 차 허용 오차 한계값을 제어하여 부호화 시간을 향상시켰다. 또한 쿼드트리분할법으로 레인지블록의 크기를 가변시켜 변환( w i )의 수를 줄임으로서 압축효율을 높이고 레인지블록의 크기에 따라 탐색 영역의 탐색 밀도를 변화시켜 화질 개선을 시도하였으며 이러한 영상 기법을 24-bpp 컬러 영상 압축에 적용하였다. 먼저 RGB표색계를 휘도신호와 채도신호를 가지는 YIQ표색계로 변환한 후 영상 정보의 일부분만 차지하고 있는 색의 정보를 나타내는 I,Q신호는 공간평균을 취하여 1/4로 축소하여 부호화하고 복원시에 선형 보간법을 이용하여 다시 원 영상으로 확대하였다. 그 결과 영상의 화질에는 거의 손실이 생기지 않았고 서로 독립성이 강한 RGB영상에 같은 부호화 방법을 사용하였을 때 보다 압축률이나 화질면 에서 우수한 성능을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• 공업화학
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• 제18권5호
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• pp.506-510
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• 2007

전기적 특성을 가지는 4,4',4''-tris(N-(1-naphthyl)-N-phenylamino)-triphenylamine (1-TNATA)가 유기발광소자(OLED)에서 전극으로 사용되는 ITO (Indium Tin Oxide)와 홀 수송층(Hole Transport Layer, HTL) 사이에 박막으로 진공증착되었다. 분자배열이 잘 되어진 1-TNATA의 경우 ITO와 홀 수송층 사이의 계면에서 생기는 전하주입장벽을 줄임으로 소자의 안정성과 효율을 높여준다. 본 연구에서의 라만 스펙트라(Raman spectra) 분석 결과, 증착된 1-TNATA 박막의 열처리와 증착하는 동안 전자기장 처리에 의해서 박막이 집적되고 분자배열이 이루어짐을 확인하였다. 열처리를 한 경우 1-TNATA 박막으로의 전류 흐름이 25% 증가하였다. 또한, $110^{\circ}C$에서 열처리한 1-TNATA 박막으로 제조된 다층유기발광소자의 전원 효율과 발광효율이 향상되었다. 열처리한 박막이 전자기장으로 처리한 박막에 비해 높은 효율을 나타내었다.

• Transactions on Electrical and Electronic Materials
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• 제10권1호
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• pp.28-30
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• 2009

We have studied organic layer-thickness dependent electrical and optical properties of bottom- and top-emission devices. Bottom-emission device was made in a structure of ITO(170 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(100 nm), and a top-emission device in a structure of glass/Al(100 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(25 nm). A hole-transport layer of TPD (N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine) was thermally deposited in a range of 35 nm and 65 nm, and an emissive layer of $Alq_3$ (tris-(8-hydroxyquinoline) aluminum) was successively deposited in a range of 50 nm and 100 nm. Thickness ratio between the hole-transport layer and the emissive layer was maintained to be 2:3, and a whole layer thickness was made to be in a range of 85 and 165 nm. From the current density-luminance-voltage characteristics of the bottom-emission devices, a proper thickness of the organic layer (55 nm thick TPD and 85 nm thick $Alq_3$ layer) was able to be determined. From the view-angle dependent emission spectrum of the bottom-emission device, the peak wavelength of the spectrum does not shift as the view angle increases. However, for the top-emission device, there is a blue shift in peak wavelength as the view angle increases when the total layer thickness is thicker than 140 nm. This blue shift is thought to be due to a microcavity effect in organic light-emitting diodes.

• 조명전기설비학회논문지
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• 제23권2호
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• pp.27-35
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• 2009

본 연구에서는 먼저 도시적 특성의 분석을 토대로 안양시를 6개 지역으로 구분하였으며 지역별 구분에 따른 야간의 조도 휘도의 실측조사 및 야간이용자 패턴 조사를 통하여 야간경관의 문제점을 도출하였다. 야간경관 연출개념으로는 지역별 문제점 분석에 따른 개선방안과 예술적 가치를 창출하는 개념을 적용하여 예술도시로서의 안양의 이미지를 고양시키고자 하였으며 야간조명의 괌형과 통일성 확보를 위해 지역별 점진적 변화를 빛의 조닝의 개념으로 선정하였다. 특히, 건축물의 높이에 따른 건축물 기준선을 통해 주변 건축물과 조화된 단계적인 스카이라인을 연출하여 자연경관 등과 조화로운 조망권을 확보하도록 하였으며 지역 특성에 따라 가로등 및 가로시설물의 조도, 높이, 램프형태, 배열방식 등의 야간 조명환경의 개선방향을 추가로 제시하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.87-88
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• 2008

In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris (8-hydroxyquinoline)aluminum$(Alq_3)$/Al device, we studied the efficiency improvement of organic light-emitting diodes due to variation of deposition rate of TPD materials. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5\times10^{-6}$Torr using a thermal evaporation. The $Alq_3$ used for an electron-transport and emissive layer were evaporated to be at a deposition rate of 2.5 $\AA$/s. When the deposition rate of TPD increased from 1.5 to 3.0 $\AA$/s, we found that the average roughness is rather smoother, external quantum efficiency is superior to the others when the deposition rate of TPD is 2.5 $\AA$/s. Compared to the ones from the devices made with the deposition rate of TPD 3.0 $\AA$/s, the external quantum efficiency was improved by a factor of eight.

• 대한전자공학회논문지SP
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• 제39권2호
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• pp.69-78
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• 2002

본 논문에서는 복잡한 배경에서의 얼굴 추출 방법을 제안한다. 제안된 알고리즘은 적응 퍼지 색 분할기법을 사용하여 얼굴색과 머리색을 분할시킨다. 얼굴색 분포는 Y,Cb,Cr 색 공간내에서 유도되어지고, 조명값에 적응적인 퍼지 시스템을 사용하여 얼굴색을 구분해낸다. 머리색은 RGB 색 공간내에서 구분되어진다. 전처리 과정을 거쳐 추출되어진 얼굴색과 머리색 영역에 컨벡스 헐을 적용하여 그들의 관계를 통해 최종적인 얼굴 영역이 추출되어진다. 제안된 방법은 기존의 패턴 매칭 방법에 비해 효율적인 성능을 나타낸다. 제안된 알고리즘의 유효성을 실험을 통해 증명하며, 색 영역에서의 제한 조건 없이 성공적으로 얼굴 영역을 추출해 냄을 알 수 있다.

• Journal of Information Display
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• 제4권2호
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• pp.1-6
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• 2003

In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.750-754
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• 2011

In this research, the electric characteristic of organic light-emitting diodes(OLEDs) was studied depending on thickness of amorphous fluoropolymer(Teflon-AF) which is the material of hole injection layer to improve electric characteristic of OLEDs. Sample composition was fabricated in double layer. The basic structure was fabricated by ITO/tris(8-hydroxyquinoline) aluminum (Alq3)/Al and the 2 layer was fabricated by ITO/2,2-Bistrifluoromethyl-4,5-Difluoro-1,3-Dioxole(Teflon-AF)/tris(8-hydro xyquinoline) aluminum (Alq3)/Al. The experiment was carried with variation of thickness of Teflon-AF at 1.0, 2.0, 2.5, 3.0 nm. The result showed when Teflon-AF thickness was 2.5 nm, the electric and optical characteristic were well performed. Moreover, when it was compared with Teflon-AF without materials, it was improved 15.1 times more on luminance, 12.7 times more on luminous efficiency and 12.1 times more on external quantum efficiency. Therefore, OLEDs element with optimum hole injection layer reduced energy barrier and driving voltage, and confirmed that it improved efficiency widely.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.215-219
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• 2004

Metal-chelate derivatives have been investigated intensively as an emitting layer and recognize to have excellent electroluminescence(EL) properties. We synthesized new luminescent material, 1,4-dihydoxy-5,8-naphtaquinone $Aiq_3$ complex($Al_2Nq_4$) and investigated the electrical optical properties. OLED has potential candidates for information display with merits of thickness, low power and high efficiency. Although the OLED show a lot of advantages for information display, it has the limit of inorganic(metal)/ organic interface. In this study, the two methods are used to study the interface of metal/organic in OLED. First, we treated $O_2$ plasma on an ITO thin film by using RIE system, and analyzed the ingredient of ITO thin film according to change of the processing conditions. We used the RDS and the XPS for the ingredient analysis of the surface and bulk. We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by using AFM. We fabricated OLED using substrate that was treated optimum ITO surface. Second, we used the buffer layer of CuPc to improve the characteristics of the interface and the hole injection in OLED. The result of the study for electrical and optical properties by using I V L T System(Flat Panel Display Analysis System), we confirmed that the electrical properties and the luminance properties were improved.