• Journal of the Korean Society for Heat Treatment
• /
• v.31 no.5
• /
• pp.237-243
• /
• 2018

In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.

• Journal of the Korean Vacuum Society
• /
• v.5 no.3
• /
• pp.206-212
• /
• 1996

$In_{1-x}Ga_xAs$ epitaxial layers were grown at 76 Torr by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Growth rate did not change much with growth temperature. Surface morphology of $In_{1-x}Ga_xAs$ epitaxial layer was affected by lattice mismatch, growth temperature and $AsH_3/(TMIn+TMGa)$ ratio. A high quality epilayer showed a full width at half maximum of 2.8 meV by photoluminescence measurement at 5K. The composition of the $In_{1-x}Ga_xAs$ was determined by the relative gas phase diffusion of TMIn and TMGa. Lattice mismatch and growth temperature were the most important variables that determine the electrical properties of $In_{1-x}Ga_xAs$ epitaxial layers. At optimized growth condition, it was possible to obtain a high quality $In_{1-x}Ga_xAs$ epilayers with a electron concentration as low as $8{\times}10^{14}/cm^3$ and an electron mobility as high as 11,000$\textrm{cm}^2$/Vsec at room temperature.

• Proceedings of the Korean Society of Crop Science Conference
• /
• 2022.10a
• /
• pp.283-283
• /
• 2022

Abiotic stresses such as high/low temperature, drought, salinity, and submergence directly or indirectly influence the physiological status and molecular mechanisms of rice which badly affect yield. Especially, the low temperature causes harmful influences in the overall process of rice growth such as uneven germination and the establishment of seedlings, which has become one of the main limiting factors affecting rice production in the world. It is of great significance to find the candidate genes controlling low-temperature tolerance during seed germination and study their functions for breeding new rice cultivars with immense low-temperature tolerance during seed germination. In this study, 120 lines of Cheongcheong/Nagdong double haploid population were used for quantitative trait locus analysis of low-temperature germinability. The results showed significant difference in germination under low different temperature conditions. In total, 4 QTLs were detected on chromosome 3, 6, and 8. A total of 41 genes were identified from all the 4 QTLs, among them, 25 genes were selected by gene function annotation and further screened through quantitative real time polymerase chain reaction. Based on gene function annotation and level of expression under low-temperature, our study suggested OsGPq3 gene as a candidate gene controlling viviparous germination, ABA and GA signaling under low-temperature. This study will provide a theoretical basis for marker-assisted breeding.

• Transactions of the Korean Society of Automotive Engineers
• /
• v.10 no.4
• /
• pp.136-140
• /
• 2002

High temperature fatigue crack growth behavior of P92 and STS 316L steel were investigated under four load conditions using CT type specimens. Loading and unloading times for the low wave forms were combinations of 1 sec. and 50 sec., which were two symmetric wave forms and two unsymmetric wave forms. Their behaviors are characterized using ΔK parameter. In STS 316L, Crack growth rate generally increases as frequency decreases. However, sensitivity of the loading rate to crack growth rate was fecund to be far greater than that of the unloading time. It is because as loading time increases, creep occurs at crack tip causing the crack growth rate to increase. However creep does not occur at the crack tip even if the unloading time is increased. In P92 steel, crack growth rate showed same behavior as in STS 316L. But the increase in loading or unloading time made almost no difference in crack growth rate, suggesting that no significant creep occurs in P92 steel even though loading time increases. After conducting high temperature tensile tests and comparing high temperature fatigue crack growth rates under various wave forms, it was proved that P92 steel has not only good high temperature properties but also improved, better high temperature fatigue properties than STS 316L.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.6
• /
• pp.185-188
• /
• 2009

The effects of the growth temperature on the properties of ZnO thin films were investigated by using X-ray diffraction, scanning electron microscopy, ultraviolet-visible spectrophotometry, and Hall measurements. The ZnO films were deposited by rf magnetron sputtering at various growth temperatures in the range of 100-$400{^{\circ}C}$. A strong c-axis preferred orientation is observed for all of the samples. As the growth temperature increases, the crystalline orientation of the ZnO (002) plane is not changed, but the full width at half maximum gets smaller. The dependence of the electron concentration, mobility, and resistivity on the growth temperature exhibits that the ZnO films have a higher electron concentration at higher temperatures, thus giving them a low resistivity. The optical transmittance and band gap energy, calculated from the spectra of optical absorbance, show a significant dependence on the growth temperature. As for the sample grown at $100{^{\circ}C}$, the average transmittance is about 90% in the visible wavelength range and the band gap is estimated to be 3.13 eV.

• Korean Journal of Ecology and Environment
• /
• v.41 no.1
• /
• pp.26-33
• /
• 2008

To understand the effect of water temperature on growth pattern of Stephanodiscus sp., we weekly or biweekly investigated in the lower part of the Nakdong River from 1994 to 2006 and performed a laboratory experiment. Stephanodiscus was the most dominant species among phytoplankton in winter when low flow persisted and the high abundances of the species were maintained from December to February. Three strains of Stephanodiscus sp. were isolated for the in vitro experiment from the Nakdong River in January 2005. Over the water temperature range of $4^{\circ}C$ to $20^{\circ}C$, the growth patterns of Stephanodiscus sp. were different in the short-term batch culture. The maximum cell density of Stephanodiscus sp. was observed at approximately $5^{\circ}C$ in the river systems, but the optimum water temperature of Stephanodiscus sp. was $10^{\circ}C$ for the growth in the laboratory experiment. However, the proliferation of Stephanodiscus sp. was related to low water temperature in the Nakdong River.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
• /
• v.11 no.4
• /
• pp.440-447
• /
• 1999

The frosting characteristics on the vertical parallel plates with three cooling plates were experimentally investigated. The experimental parameters were the cooling plate temperature, the air humidity, the air temperature, the air Reynolds number, and the location. The frosting conditions were limited to air temperatures from 10 to $15^{\circ}C$ , air Reynolds numbers from 1600 to 2270, air humidity ratios from 0.00275 to 0.0037kgw/kga and cooling plate temperatures from -10 to $-20^{\circ}C$. Frost growth and density toward the front of the plate were more thick and dense than toward the rear. Frost growth increased with decreasing plate temperature and increasing humidity. In the conditions of the laminar flow, dew point below $0^{\circ}C$and non-cyclic frosting period, frost thickness increased with increasing air temperature. The reason of increasing frost thickness with increasing air temperature was sublimation-ablimation process. The average growth thickness along the locations showed little dependence on the Reynolds numbers.

• Journal of Welding and Joining
• /
• v.28 no.5
• /
• pp.45-50
• /
• 2010

The fatigue crack growth characteristics of base metal and weld joint of 9% Ni steel for LNG storage tank was carried out using CT specimen at room temperature and $-162^{\circ}C$. Fatigue crack growth rate of base and weld metals at RT and $-162^{\circ}C$ was coincided with a single line independent of the change of stress ratio and temperature. In the region of lower stress intensity factor range, fatigue crack growth rate at $-162^{\circ}C$ was slower than that at RT, and the slop of fatigue crack growth rate at $-162^{\circ}C$ increased sharply with propagating of fatigue crack, fatigue crack growth rate at RT and $-162^{\circ}C$ was intersected near the region of $2{\times}10-4\;mm$/cycle, and after the intersection region, fatigue crack growth rate at $-162^{\circ}C$ was faster than that at RT. The micro-fracture mechanism using SEM shows the ductile striation in the stable crack growth region. Also the defects of weld specimen after fatigue testing were detected using the A scan of ultrasonic apparatus.

• Journal of Plant Biology
• /
• v.8 no.1_2
• /
• pp.19-23
• /
• 1965

Interaction occuring among the different Ca concentrations, pH and temperatures in the promotive effect of Ca in pollen growth was studied by using pollen from Crinum asiaticum and Cryptostegia grandiflora. Data for pollen tube elongation were found to be more indicative of representing the promotive action of Ca ion in pollen growth than those for pollen germination, and were served to evaluate the experimental results. The pollen growth increased as the concentration of Ca increase. The optimal pH range for pollen growth shifted from the lower pH to the higher as the concentration of Ca increase. The characteristic Ca effect was disappeared, and no pH effect at various ranges was observed when pollen grains were grown at the low temperature(8$^{\circ}C$). The Ca effect became quite pronounced if temperature were raised. The Ca effect became even mroe striking if the condition was in higher pH ranges (weak alkaline). Higher pH ranges were found to be more favorable for the Ca action, whereas higher temperature was required to bring about more pronounced Ca effect. Thus, the longest pollen tube was obtained with the highest pH, temperature adopted for the medium supplemented with Ca in the present experiment, and the shortest tube with the lowest temperature applied at the highest pH. Pectin synthesis in pollen tube was considered as a metabolic process, whereas Ca binding in pectin of the pollen tube wall as non-metabolic in nature. Disappearance of Ca effect at the low temperature was probably brought about by blocking the metabolic synthesis of pectin, and nonmetabolic Ca binding seems to take place more extensively with higher concentrations of Ca and at higher pH levels than the lower.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1993.11a
• /
• pp.64-66
• /
• 1993

The charateristics of low temperature poly-Si thin films with different growth condition were investigated and poly-Si TFTs were fabricated on solid phase crystallized (SPC) amorphous silicon films and as-deposited poly-Si films. The performance of devices fabricated on the SPC amorphous silicon films was shown to be superior to that of devices fabricated on as-deposited poly-Si films. It was found that the characteristics of low-temperature poly-Si thin films such as surface roughness, crystal texture and grain size strongly influenced the poly-Si TFT performance.