• 반도체디스플레이기술학회지
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• 제10권4호
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• pp.113-118
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• 2011

According to the high accuracy of semiconductor equipments, PCB substrate with much thin thickness is required. However, it is very difficult to sustain the PCB substrate without deformation in case of horizontal installation, due to low bending stiffness. In this research, new PCB process equipment with vertical installation has been developed in order to solve the problem of PCB substrate damage during etching process. As the main parts of etching system on PCB substrate, PCB substrate and JIG are analyzed through finite element method and experimental test. Through the analysis results of stress state, we could find the optimal JIG design to make the damage as low as possible.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.10-15
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• 2021

Cache bypassing schemes have been studied to remove unnecessary updating the data in cache blocks. Among them, a statistics-based cache bypassing method for asymmetric-access caches is one of the most efficient approach for non-voliatile memories and shows the lowest cache access latency. However, it is proposed under the condition of the normal cache system, so further study is required for the hybrid cache architecture. This paper proposes a novel cache bypassing scheme, called hybrid bypassing block selector. In the proposal, the new model is established considering the SRAM region and the non-volatile memory region separately. Based on the model, hybrid bypassing decision block is implemented. Experiments show that the hybrid bypassing decision block saves overall energy consumption by 21.5%.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.688-696
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• 2014

A slew-rate control method of LCD driver ICs is introduced to increase uniformity between adjacent driver ICs and reduce power consumption. The slew rate of every voltage follower is calibrated by a feedback algorithm during the non-displaying period. Under normal operation mode, the slew rate is dynamically controlled for improving power efficiency. Experimental results show that the power consumption is reduced by 16% with a white pattern and by 10% with a black pattern, and display defects are successfully eliminated.

• 반도체디스플레이기술학회지
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• 제12권1호
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• pp.41-45
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• 2013

IGZO transparent conductive thin films were widely used as transparent electrode of optoelectronic devices. We have studied the optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 25, 50, 75and 100 W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The thin films were electrically characterized by high mobility above $13.4cm^2/V{\cdot}s$, $7.0{\times}10^{19}cm^{-3}$ high carrier concentration and $6{\times}10^{-3}{\Omega}-cm$ low resistivity. By the studies we found that IGZO transparent thin film can be used as transparent electrodes in electronic devices.

• 대한임베디드공학회논문지
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• 제9권2호
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• pp.75-80
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• 2014

Energy consumption of sensor nodes is minimized because it has limited energy generator in wireless sensor network. Electronic shelf label system is one of application fields using wireless sensor networks. Battery size of small apparatus for displaying price is restricted. Therefore its current consumption have to be minimized. Furthermore the method for minimization of peak current would be considered because life cycle of coin battery used to display or RF is vulnerable to intensity of drain current. In this paper, we analyze current consumption pattern of low-power electronic shelf label system. Then we propose the method for minimization of current consumption by modification of software and hardware. Current consumption of the system using proposed method are approximately 15 to 20 percent lower than existing system and the life cycle of the system is approximately 10 percent higher than existing system.

• 반도체디스플레이기술학회지
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• 제5권3호
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• pp.11-16
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• 2006

A low cost PDP sustain power supply is proposed based on flyback topology. By using Boundary Conduction Method(BCM) to control input current regulation, DCM condition can be met under all load conditions. Another feature of the proposed method is that a excessive voltage stress due to the link voltage increase can be suppressed by removing link capacitor and suggest new 'Level-shifting switch driver'. this new gate driver is improved 66% of efficiency than switching loss of a existed push-pull amplifier. The proposed converter is tested with a 400W(200V-2A output) prototype circuit.

• 반도체디스플레이기술학회지
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• 제20권3호
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• pp.108-112
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• 2021

For smart mobile devices, the wireless communication module is one of the hardware modules that consume the most energy. If we can build a multi-channel multi-interface environment using heterogeneous communication modules and operate them dynamically, data transmission performance can be highly improved by increasing the parallelism. Also, because these heterogeneous modules have different data rates, transmission ranges, and power consumption, we can save energy by exploiting a power efficient and low speed wireless interface module to transmit/receive sporadic small data. In this paper, we propose a power efficient data transmission method using heterogeneous communication networks. We also compared the performance of our proposed scheme to a conventional scheme, and proved that our proposed scheme can save energy while guaranteeing reasonable data delivery time.

• 반도체디스플레이기술학회지
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• 제20권3호
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• pp.32-38
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• 2021

We developed an inductively coupled plasma (ICP) etcher for GaN etching using a parallel plasma electrode source with a multifunctional chuck matched to it in order for the low power consumption and low process cost in comparison with the conventional ICP system with a helical-type plasma electrode source. The optimization process condition using it for the micro light-emitting diode (µ-LED) chip fabrication was established, which is an ICP RF power of 300 W, a chuck power of 200 W, a BCl₃/Cl₂ gas ratio of 3:2. Under this condition, the mesa structure with the etch depth over 1 ㎛ and the etch angle over 75° and also with no etching residue was obtained for the µ-LED chip. The developed ICP showed the improved values on the process pressure, the etch selectivity, the etch depth uniformity, the etch angle profile and the substrate temperature uniformity in comparison with the commercial ICP. The µ-LED chip fabricated using the developed ICP showed the similar or improved characteristics in the L-I-V measurements compared with the one fabricated using the conventional ICP method

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.449-449
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• 2007

OLED has many advantages of low voltage operation, self radiation, light weight, thin thickness, wide view angle and fast response time to overcome existing liquid crystal display (LCD)'s weakness. Therefore, It draws attention as promising display and has already developed for manufactured goods. Also, OLED is regarded as a only substitute of flexible display with a thin display. A considerable portion of the light originating film emissive centers buried in a solid film never escapes due to internal reflection at the air-film interface and is scattered as edge emission or dissipated within the solid film This is one of the major reasons why the luminous power efficiency of OLED remains low, in spite of research progress in OLED. Although several ways of overcoming this difficulty have been reported, no comprehensive method has been proposed yet. In this paper, we propose that use of anti-reflective coating layers.

• 반도체디스플레이기술학회지
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• 제13권4호
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• pp.21-25
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• 2014

The silicon nitride ($SiN_x$) film for surface passivation and anti-reflection coating of crystalline silicon solar cell is very important and it is generally deposited by plasma enhanced chemical vapor deposition (PECVD). PECVD can be divided into low and high frequency method. In this paper, the $SiN_x$ film deposited by low and high frequency PECVD method was studied. First, to optimize the $SiN_x$ film deposited by low frequency PECVD method, the refractive index was measured by varying the process conditions like $SiH_4$, $NH_3$, $N_2$ gas rate, and RF power. When $SiH_4$ gas rate was increased and $NH_3$ gas rate was decreased, the refractive index was increased. The refractive index was also increased with RF power decline. Second, to compare the characteristics of the low and high frequency PECVD $SiN_x$ film, the refractive index was measured by varying $NH_3/SiH_4$ gas ratio and RF power and the minority carrier lifetime of before and after high temperature treatment process was also measured. The refractive index of both low and high frequency PECVD $SiN_x$ film was decreased with increase in $NH_3/SiH_4$ gas ratio and RF power. After high temperature treatment process, the minority carrier lifetime of both low and high frequency PECVD $SiN_x$ film was increased and increased degree was similar. The minority carrier lifetime of low frequency PECVD $SiN_x$ was increased from $11.03{\mu}m$ to $28.24{\mu}m$ and that of high frequency PECVD $SiN_x$ was increased from $11.60{\mu}m$ to $27.10{\mu}m$.