• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.240-240
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• 2009

We developed the low level laser therapy(LLLT) apparatus for external injury cure using a GaAsP Diode. This equipment was fabricated by using GaAsP diode and a microcontroller, and designed to enable us to control light irradiation timer, and frequency. In this paper, the designed device was used to find out how GaAsP diode light source affects the skin wound of RAT. In the experiment, $1cm^2$ wounds on the External injury of RAT were made. Light irradiation RAT and none light irradiation RAT divided, each RAT was irradiated 20 min a day for 9 days. In result, compared with none light irradiation RAT, the lower incidence of inflammation and faster recovery was shown in light irradiation RAT.