• Title/Summary/Keyword: Low-frequency range

Search Result 1,822, Processing Time 0.032 seconds

A Design of a 5 GHz Low Phase Noise Voltage Tuned Dielectric Resonator Oscillator Using Loop Group Delay (루프 군지연을 이용한 저위상 잡음 5 GHz 전압제어 유전체 공진기 발진기 설계)

  • Son, Beom-Ik;Jeong, Hae-Chang;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.25 no.3
    • /
    • pp.269-281
    • /
    • 2014
  • In this paper, a systematic design of a low phase noise voltage-tuned dielectric resonator oscillator(VTDRO) using loop group delay is proposed. Designed VTDRO is closed-loop type and consists of a cascade connection of a resonator, phase shifter, and amplifier. Firstly, a reference VTDRO is fabricated and its phase noise and electrical frequency tuning range are measured. Both the phase noise and electrical frequency tuning range depend on the loop group delay. Then, a required value of loop group delay for a new VTDRO with a low phase noise can be systematically computed. In addition, its phase noise and electrical frequency tuning range can be theoretically estimated using those obtained from the measurement of the reference VTDRO. When the loop group delay increases, the phase noise decreases and the electrical frequency tuning range also decreases. The former predominantly depends on the resonator structure. Therefore we propose a systematic design procedure of a resonator with high group delay characteristics. The measured loop group delay of the new VTDRO is about 700 nsec. The measured phase noise of the new VTDRO show a state-of-the-art performance of 154.5 dBc/Hz at 100 kHz frequency offset and electrical frequency tuning range of 448 kHz for a voltage change of 0~10V. The oscillation power is about 4.39 dBm.

Microstructure and Dielectric Properties of $BaTi_4O_9$ Thin Film for Microwave Devices (고주파 소자용 $BaTi_4O_9$ 박막의 미세구조와 유전특성 연구)

  • Jang, Bo-Yun;Lee, Suk-Jin;Nahm, Sahn;Lee, Hwack-Joo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.07a
    • /
    • pp.125-129
    • /
    • 2004
  • [ $BaTi_4O_9$ ] thin film were grown on $Pt/Ti/SiO_2/Si$ substrate using rf magnetron sputter, and the microstructure and dielectric properties of the thin films were investigated. For the film grown at $350^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$, the $BaTi_5O_{11}$ Phase was formed. However, the $BaTi_4O_9$ phase was formed when the growing temperature exceeded $450^{\circ}C$ The dielectric constant of the $BaTi_4O_9$ thin film grown at $550^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$ was about 40 at low frequency range($100kHz{\sim}1MHz$) and 36 at microwave range($1{\sim}10GHz$) which is very close to that of the bulk $BaTi_4O_9$ phase. The dissipation factor was very low, about 0.005 at low frequency as well as microwave range.

  • PDF

Increasing the Range of Modulation Indices with the Polarities of Cells and Switching Constraint Reliefs for the Selective Harmonic Elimination Pulse Width Modulation Technique

  • Najjar, Mohammad;Iman-Eini, Hossein;Moeini, Amirhossein
    • Journal of Power Electronics
    • /
    • v.17 no.4
    • /
    • pp.933-941
    • /
    • 2017
  • In this paper an improved low frequency selective harmonic elimination-PWM (SHE-PWM) technique for Cascaded H-bridge (CHB) converters is proposed. The proposed method is able to eliminate low order harmonics from the output voltage of the converter for a wide range of modulation indices. To solve SHE-PWM equations, especially for low modulation indices, a modified method is used which employs either the positive or negative voltage polarities of H-bridge cells to increase the freedom degrees of each cell. Freedom degrees of the switching angles are also used to increase the range of available solutions for non-linear SHE equations. The proposed SHE methods can successfully eliminate up to $25^{th}$ harmonic from a 7-level output voltage by using just nine switching transitions or a 150 Hz switching frequency. To confirm the validity of the proposed method, simulation and experimental results have been presented.

Low Phase Noise CMOS VCO with Hybrid Inductor

  • Ryu, Seonghan
    • IEIE Transactions on Smart Processing and Computing
    • /
    • v.4 no.3
    • /
    • pp.158-162
    • /
    • 2015
  • A low phase noise CMOS voltage controlled oscillator(VCO) for multi-band/multi-standard RF Transceivers is presented. For both wide tunability and low phase noise characteristics, Hybrid inductor which uses both bondwire inductor and planar spiral inductor in the same area, is proposed. This approach reduces inductance variation and presents high quality factor without custom-designed single-turn inductor occupying large area, which improves phase noise and tuning range characteristics without additional area loss. An LC VCO is designed in a 0.13um CMOS technology to demonstrate the hybrid inductor concept. The measured phase noise is -121dBc/Hz at 400KHz offset and -142dBc/Hz at 3MHz offset from a 900MHz carrier frequency after divider. The tuning range of about 28%(3.15 to 4.18GHz) is measured. The VCO consumes 7.5mA from 1.3V supply and meets the requirements for GSM/EDGE and WCDMA standard.

Shallow Water Low-frequency Reverberation Model (천해 저주파 잔향음 예측모델)

  • 김남수;오선택;나정열
    • The Journal of the Acoustical Society of Korea
    • /
    • v.21 no.8
    • /
    • pp.679-685
    • /
    • 2002
  • Low-frequency mono-static reverberation model for shallow-water environment is presented. It is necessary to develop the transmission loss model to calculate the sub-bottom interaction because the ray-based transmission loss model is difficult to compute the pressure accurately which penetrates the bottom medium. In this paper reverberation level is calculated using the RAM (Range dependent Acoustic Model) to augment the multi-path expansion model because it does not estimate transmission loss accurately in shallow water. The signals generated by the L-HYREV and the GSM are compared with the observed signals and it is showed that the L-HYREV model provides a closer fit to the observed signals than those obtained using the GSM.

Design Guidelines for a Capacitive Wireless Power Transfer System with Input/Output Matching Transformers

  • Choi, Sung-Jin
    • Journal of Electrical Engineering and Technology
    • /
    • v.11 no.6
    • /
    • pp.1656-1663
    • /
    • 2016
  • A capacitive wireless power transfer (C-WPT) system uses an electric field to transmit power through a physical isolation barrier which forms a pair of ac link capacitors between the metal plates. However, the physical dimension and low dielectric constant of the interface medium severely limit the effective link capacitance to a level comparable to the main switch output capacitance of the transmitting circuit, which thus narrows the soft-switching range in the light load condition. Moreover, by fundamental limit analysis, it can be proved that such a low link capacitance increases operating frequency and capacitor voltage stress in the full load condition. In order to handle these problems, this paper investigates optimal design of double matching transformer networks for C-WPT. Using mathematical analysis with fundamental harmonic approximation, a design guideline is presented to avoid unnecessarily high frequency operation, to suppress the voltage stress on the link capacitors, and to achieve wide ZVS range even with low link capacitance. Simulation and hardware implementation are performed on a 5-W prototype system equipped with a 256-pF link capacitance and a 200-pF switch output capacitance. Results show that the proposed scheme ensures zero-voltage-switching from full load to 10% load, and the switching frequency and the link capacitor voltage stress are kept below 250 kHz and 452 V, respectively, in the full load condition.

Design and Fabrication of a X-band Voltage Control Dielectric Resonator Oscillator with The Low Phase Noise (낮은 위상잡음을 갖는 X-band 전압제어 유전체 공진형 발진기의 설계 및 제작)

  • 박창현;최병하
    • Journal of the Institute of Electronics Engineers of Korea TC
    • /
    • v.41 no.5
    • /
    • pp.69-76
    • /
    • 2004
  • In this paper, a VCDRO (Voltage Control Dielectric Resonator Oscillator) with low phase noise for X-band application has been designed and fabricated. A low noise and low flicker noise MESFET and a high Q dielectric resonator were selected to obtain good phase noise Performance. Also, a varactor diode having high Q, qualify factor was used to reduce the loading effects and a big Gamma of diode was chosen for linearity of frequency over voltage tuning range. The fabricated circuits was simulated with circuit design tools, ADS to provide the optimum performances. As the measured results of fabricated oscillator, the output power was 5.8 ㏈m at center frequency 12.05㎓ and harmonic suppression -30㏈c, phase noise -114 ㏈c at 100 KHz offset frequency, respectively, and the frequency tuning range as the function of valtage applied to varactor diode was 15.2 MHz and its power variation with frequency was 0.2 ㏈. This oscillator could be available to a local oscillator in X-band.

Thin-Shell Approach for Elastic Wave Propagation in a Pipe with Liquid

  • Kim Jin Oh;Rose Joseph L.
    • Journal of Mechanical Science and Technology
    • /
    • v.19 no.5
    • /
    • pp.1087-1094
    • /
    • 2005
  • This paper presents the validity and limitation of the thin-shell approach for the analysis of elastic wave propagation in a pipe with nonviscous liquid. The phase velocities calculated by the thin-shell approach were compared with those calculated by the thick-cylinder approach. In contrast to the case of the empty pipe, where only two modes were obtained and the first mode was calculated in a limited frequency range, the results for the liquid-filled pipe exhibits a large number of modes due to the large number of branches of the apparent liquid mass. Several of the lowest modes of the waves in a liquid-filled pipe were calculated for various pipe thicknesses in a low frequency range. The thin-shell approach was valid for a reasonable range of pipe thicknesses.

A DC~7GHz Ultrabroad-Band GaAs MESFET (DC~7GHz 초광대역 GaAs MESFET 증폭기)

  • 윤영철;장익수
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.30A no.3
    • /
    • pp.34-42
    • /
    • 1993
  • An analytic approach to wide-band amplification using simplified equivalent MESFET modeling has enabled an ultrabroad-band flat-gain amplifier from DC to microwave. The developed lossy-match ultrabroad-band amplifier operates as a RC coupled circuit in the low-frequency range and lossless impedance matching circuit in the microwave frequency range with gain compensation circuits. The reduced gain caused by external resistors is compensated using 2-stage cascade amplification, and the gain of designed unit is 12.5.+-.1dB from the vicinity of DC to 7GAz. The experimental gain characteristics are good agreement with computer simulated results. The input and output VSWRs are measured under 2:1 over the operating frequency range, and the gain goes down over 15dBrange with various gate bias voltages.

  • PDF

Investigations of Temperature Effect on the Conduction Mechanism of Electrical Conductivity of Copolymer/Carbon Black Composite

  • El Hasnaoui, M.;Kreit, L.;Costa, L.C.;Achour, M.E.
    • Applied Microscopy
    • /
    • v.47 no.3
    • /
    • pp.121-125
    • /
    • 2017
  • This study deals the prediction of temperature effect on low-frequency dispersion of alternating current (AC) conductivity spectra of composite materials based on copolymer reinforced with carbon black (CB) particles. A sample of ethylene butylacrylate loaded with 13% of CB particles were prepared and investigated using the impedance spectroscopy representation in the frequency range from 40 Hz to 0.1 MHz and temperature range from $20^{\circ}C$ to $125^{\circ}C$. The dielectric constant, ${\varepsilon}^{\prime}$, and dielectric losses, ${\varepsilon}^{{\prime}{\prime}}$, were found to decrease with increasing frequency. The frequency dependence of the AC conductivity follows the universal power law with a large deviation in the high frequency region, the positive temperature coefficient in resistivity effect has been observed below the melting temperature which makes this composite potentially remarkable for industrial applications.