• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1120-1123
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• 2008

Efficient, color stable multi-EML WOLED have been fabricated using newly synthesized yellowish green dopant Ir(chpy)3 or Ir(mchpy)3. The devices have high external quantum efficiency of 11.7%, color rendering index of 87, variation of CIE coordinate of (0.02, 0.01) between 10 to 5000 cd/m2, and low roll-off in efficiency with increasing brightness.

• ETRI Journal
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• v.43 no.6
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• pp.1093-1102
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• 2021

Microdisplays based on organic light-emitting diodes (OLEDs) have a small form factor, and this can be a great advantage when applied to augmented reality and virtual reality devices. In addition, a high-resolution microdisplay of 3000 ppi or more can be achieved when applying a white OLED structure and a color filter. However, low luminance is the weakness of an OLED-based microdisplay as compared with other microdisplay technologies. By applying a tandem structure consisting of two separate emission layers, the efficiency of the OLED device is increased, and higher luminance can be achieved. The efficiency and white spectrum of the OLED device are affected by the position of the emitting layer in the tandem structure and calculated via optical simulation. Each white OLED device with optimized efficiency is fabricated according to the position of the emitting layer, and red, green, and blue spectrum and efficiency are confirmed after passing through color filters. The optimized white OLED device with color filters reaches 97.8% of the National Television Standards Committee standard.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.446-449
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• 2008

Organic light emitting diodes (OLEDs) with multiple organic layers were fabricated to obtain and to evaluate an equivalent resistance and an equivalent capacitance of OLED device. The staircase voltage with an increasing period and a constant period was designed and applied to the OLED. The resistance of OLED was found to decrease from $270\;k{\Omega}$ to $2\;K{\Omega}$ as applied voltage increased after turn on. The equivalent capacitance of OLED maintained unchanged at low voltage level and deceased after showing peak value as the applied voltage increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.285-285
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• 2016

Resistive random access memory devices have been widely studied due to their high performance characteristics, such as high scalability, fast switching, and low power consumption. However, fluctuation in operational parameters remains a critical weakness that leads to device failures. Although the random formation and rupture of conducting filaments (CFs) in an oxide matrix during resistive switching processes have been proposed as the origin of such fluctuations, direct observations of the formation and rupture of CFs at the device scale during resistive switching processes have been limited by the lack of real-time large-area imaging methods. Here, a novel imaging method is proposed for monitoring CF formation and rupture across the whole area of a memory cell during resistive switching. A hybrid structure consisting of a resistive random access memory and a light-emitting diode enables real-time monitoring of CF configuration during various resistive switching processes including forming, semi-forming, stable/unstable set/reset switching, and repetitive set switching over 50 cycles.

• Korean Journal of Metals and Materials
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• v.46 no.10
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• pp.683-690
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• 2008

In order to develop transparent electrodes for high efficiency GaN-based light emitting diodes (LEDs), the electrical and optical properties of the electron beam evaporated ITO contacts have been investigated as a function of the deposition temperature and flow rate of oxygen during the deposition. As the deposition temperature increases from $140^{\circ}C$ to $220^{\circ}C$, the resistivity of the ITO films decreases slightly from $4.0{\times}10^{-4}{\Omega}cm$ to $3.3{\times}10^{-4}{\Omega}cm$, meanwhile the transmittance of the ITO films significantly increases from 67% to 88% at the wavelength of 470 nm. When the flow rate of oxygen during the deposition increases from 2 sccm to 4 sccm, the resistivity of the ITO films increases from $3.6{\times}10^{-4}{\Omega}cm$ to $7.4{\times}10^{-4}{\Omega}cm$, meanwhile the transmittance of the ITO films increases from 86% to 99% at 470 nm. Blue LEDs fabricated with the electron beam evaporated ITO electrode show that the ITO films deposited at $200^{\circ}C$ and 3 sccm of the oxygen flow rate give a low forward-bias voltage of 3.55 V at injection current of 20 mA with a highest output power.

• Fashion & Textile Research Journal
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• v.15 no.5
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• pp.834-840
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• 2013

This study aims to suggest practical considerations for designing protective clothing with increased visibility that will have higher user acceptance by law enforcement officers. Light-emitting diode(LED) patrol vests were visually and structurally assessed, and 125 police officers' responses from surveys about user acceptance of the vest were analyzed. The current LED patrol vest was designed for enhanced safety of police officers by increasing visibility in the dark. However, the user acceptance rate of the LED patrol vest indicates low use of and low satisfaction with the vest despite its enhanced safety features. In particular, differences in materials, design, functionality of the pockets and size of the vest depending on the hours worked, were statistically significant. The police officers' responses suggest areas of improvement in design, materials, ease of movement, size and functionality. Key issues include 'tactile discomfort'; 'impeded vision from the glare of the LED'; 'frequent malfunctions of the LED'; 'impossible repair of the broken LED units'; 'no user feedback'; 'inconvenient to replace batteries'; 'brittle materials' and 'unpleasing look'. To increase user acceptance, designer should incorporate context-awareness, a convenient user interface, a modular design approach, first responders' self-image as public servants in relation to their aesthetic perspectives of their uniforms, and scientific evaluation of the effectiveness of the intended functions of the clothing. Suggested implications for designing the LED patrol vest can be applied to designing other functional/protective clothing for intended end users with special needs.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1650-1653
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• 2007

We demonstrate fluorescent green organic lightemitting diodes employing a rhenium oxide ($ReO_3$)-doped N,N-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) hole transporting layer (HTL). The devices exhibit significantly reduced driving voltages as well as prolonged lifetime. Details of $ReO_3$ doping effects are described in terms of charge transfer complex and stabilization of HTL morphology.

• Journal of the Korean institute of surface engineering
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• v.41 no.5
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• pp.199-204
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• 2008

Indium tin oxide (ITO) has been commonly used as an anode for organic light emitting diode (OLED), because of its relatively high work function, high transmittance, and low resistance. The ITO was mostly deposited by capacitive type DC or RF sputtering. In this study we introduced a new facing target sputtering method. On applying this new sputtering method, the effect of fundamental deposition parameters such as substrate heating and post etching were investigated in relation to the resultant I-V-L characteristics of OLED. Three kinds of ITOs deposited at room temperature, at $400^{\circ}C$ and at $400^{\circ}C$ with after surface modification by $O_2$ plasma etching were compared. The OLED on ITO deposited with substrate heating and followed by etching showed better I-V-L characteristics, which starts to emit light at 4 volts and has luminescence of $65\;cd/m^2$ at 9 volts. The better I-V-L characteristics were ascribed to the relevant surface roughness with uniform micro-extrusions and to the equi-axed micromorphology of ITO surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.150.2-150.2
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• 2015

In this study, we analyzed the electric and optical characteristics by using various deposition rate ($0.5{\AA}$, $1.0{\AA}$ and $1.5{\AA}/s$) in order to enhance the performance in organic light-emitting devices (OLED). The organic multi-layer structures were deposited with NPB ($500{\AA}$ as hole transport layer), Alq3 ($600{\AA}$ as electron transport layer and emission layer) and LiF ($8{\AA}$ as electron injection layer) via SUNIC PLUS200 on Glass/ITO substrates. In this experiment, we examined the relationship between porous state of organic deposition and mobility of the organic materials. Among the three deposition rates, $0.5{\AA}/s$ achieved the highest performance of (10,786cd/m2, 4.387cd/A) comparing with that of $1{\AA}/s$ (7,779cd/m2, 3.281cd/A) and $1.5{\AA}/s$ (5,167cd/m2, 2.693cd/A). We confirmed that low deposition rate helps to arrange organic materials densely and to move easily another atomic location using inter-chain transporting by orbital overlap.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.20.2-20.2
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• 2011

III-nitrides have attracted much attention for optoelectronic device applications whose emission wavelengths ranging from green to ultraviolet due to their wide band gap. However, due to the strong polarization properties of conventional c-plane III-nitrides, the built-in polarization-induced electric field limits the performance of optical devices. Therefore, there has been a renewed interest in the growth of nonpolar III-nitride semiconductors for polarization free heterostructure optoelectronic and electronic devices. However, the crystal and the optical quality of nonpolar/semipolar GaN have been poorer than those of conventional c-plane GaN, resulting in the relative poor optical and electrical properties of light emitting diodes (LEDs). In this presentation, I will discuss the growth and characterization of high quality nonpolar a-plane and semipolar (11-22) GaN and InGaN multiple quantum wells (MQWs) grown on r- and m-plane sapphire substrates, respectively, by using metalorganic chemical vapor deposition (MOCVD) without a low temperature GaN buffer layer. Especially, the epitaxial lateral overgrowth (ELO) technique will be also discussed to reduce the dislocation density and enhance the performance of nonpolar and semipolar GaN-based LEDs.