• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.8
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• pp.907-914
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• 2015

Due to the global warming, the restriction for emitting the green-house gas is strengthened and a main ingredient of the green-house gas is carbon dioxide ($CO_2$). In order to reduce the amount of $CO_2$, the low-carbon and long-life of the construction and the construction materials management system based on the radio frequency identification (RFID) technique have been actively studied in the construction field. The conventional construction management system based on RFID only focuses on the study and experiment for managing the used amount and location of the construction materials in the construction stage, but it does not consider the study for the status management system for the recycling materials in the construction stage or the building deactivation. In this paper, we propose the effective RFID system for managing the status of the construction materials during the construction stage or the building deactivation. Employing RFID with the frequency of 900MHz, the proposed system consists of the reader unit, communication unit, and memory unit, and its tags are attached in the surface or inside of the construction materials.

• Restorative Dentistry and Endodontics
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• v.39 no.3
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• pp.155-163
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• 2014

Objectives: Light-curing of resin-based materials (RBMs) increases the pulp chamber temperature, with detrimental effects on the vital pulp. This in vitro study compared the temperature rise under demineralized human tooth dentin during light-curing and the degrees of conversion (DCs) of three different RBMs using quartz tungsten halogen (QTH) and light-emitting diode (LED) units (LCUs). Materials and Methods: Demineralized and non-demineralized dentin disks were prepared from 120 extracted human mandibular molars. The temperature rise under the dentin disks (n = 12) during the light-curing of three RBMs, i.e. an Ormocer-based composite resin (Ceram. X, Dentsply DeTrey), a low-shrinkage silorane-based composite (Filtek P90, 3M ESPE), and a giomer (Beautifil II, Shofu GmbH), was measured with a K-type thermocouple wire. The DCs of the materials were investigated using Fourier transform infrared spectroscopy. Results: The temperature rise under the demineralized dentin disks was higher than that under the non-demineralized dentin disks during the polymerization of all restorative materials (p < 0.05). Filtek P90 induced higher temperature rise during polymerization than Ceram.X and Beautifil II under demineralized dentin (p < 0.05). The temperature rise under demineralized dentin during Filtek P90 polymerization exceeded the threshold value ($5.5^{\circ}C$), with no significant differences between the DCs of the test materials (p > 0.05). Conclusions: Although there were no significant differences in the DCs, the temperature rise under demineralized dentin disks for the silorane-based composite was higher than that for dimethacrylate-based restorative materials, particularly with QTH LCU.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.161-167
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• 2013

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at $200^{\circ}C$ and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.47-49
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• 1995

We report the spectroscopic properties of column-III nitrifies of GaN, GaInN, and AlGaN. The column-III nitride semiconductors are promising materials to realize the current-injection-type blue-and ultraviolet (UV)-light-emitting devices with high performance. To acheive the lasing with low threshold, the devices are must constructed to double heterostructure by succesive epitaxial growth technique, and we must confine the carriers in the potential barrier and optical confinement in wave guide between barrier and active layers has different refractive index. The refractive index of column-III nitride semiconductors, however, are rarely reported. The measured refractive index was 2.9, and the observed characteristic peak near the enrgy gap was analysed using a dielectric function and may due to excitonic contribution.

• Proceedings of the Korean Institute of Interior Design Conference
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• 2007.05a
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• pp.81-84
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• 2007

The purpose of this study was to grasp actual condition of remodeling elements by specialists' in-depth interviews. The interview has been conducted to interior designer who have a wide experience of apartment remodeling. In-depth interview is a kind of qualitative method in which attention to reply of responses with open-access between interviewer and respondents. According to the results, remodeling elements were generally the renovation of balcony into the livingroom or children room, removal a doorsill, installation of storage furniture, change of lighting fixtures in the all rooms and change equipments of bathroom. Finishing materials were usual used normal wallpaper and normal or low emitting adhesive on ceiling and wall, tempered-flooring on floor, and ceramic tiles on bottom and wall of bath and entrance.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.17-18
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• 2006

Flat Panel Displays (FPDs) have made a revolution in the display industry. TFT-LCD (Thin Film Transistor Liquid Crystal Display) has been the main player of FPD for last two decades. As the industry continuously develops the technology for better performance with lower cost is constantly demanded where several post LCD technologies are being developed. One of the prime candidates of post LCD technology is AMOLED (Active Matrix Organic Light Emitting Diode) that is considered to be an ideal FPD due to its extraordinary display performance and potentially low cost display structure. This technology has been accepted to small size display applications, such as cellular phone, PDA and PMP, etc. In this paper it is discussed that how this technology can be extended to large size display applications, such as TV. The technical issues and solutions of TFT backplane and color patterning of OLED materials are discussed and proposed

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.5
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• pp.927-931
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• 2010

Recently, high luminance and high efficiency were realized in OLED with multilayer structure including emitting materials such as metal-chelate complexes. We synthesized a new luminescent material, namely, [2-(2-hydroxyphenyl)quinoline] (Zn(HPB)q) which has low molecular compound and emitted in yellowish green region. The ionization potential(IP) and electron affinity(EA) of Zn(HPB)q were measured by cyclic-voltammetry(CV). As a result, IP and EA of Zn(HPB)q were calculated 6.8 eV and 3.5 eV, respectively. We fabricated the devices and observed the possibility of Zn(HPB)q as electron transporting layer. We have obtained an improvement of luminance and decrease of turn-on voltage using Zn(HPB)q as electron transporting layer.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.103-104
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• 1998

GaN is a ppromising materials fot applications in the blue/ultraviolet (UV) light emitting diodes (LEDs)[1] and laser diodes (LDs) [2] High quality ohmic contacts are very critical to these applications since the qualities of ohmic contact system pplay an impportant roles in the high efficient device opperations. For the n-GaN there have been many repports about ohmic contacts and the sppecific contact resistance were as low as from 10-8$\Omega$cm2 However for the ohmic contacts on pp-GaN much fewer study were repported and the sppecific contact resistivity was much lower than of n-GaN. In this ppapper we repport a new Ni/ppt/Au metallization scheme and discuss the mechanism of ohmic formation

• Transactions on Electrical and Electronic Materials
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• v.9 no.3
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• pp.116-119
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• 2008

The purpose of this study is to develop the Photodynamic Therapy Equipment for medical treatment. We developed the equipment which was helpful in palpating wound healing by using 525 nm LEDs. The equipment was assembled with a micro-controller and green color LEDs, and designed to enable us to control light irradiation time, intensity and so on. In this study, the designed device was used to find out how 525 nm LEDs light affected the skin wound of SD-Rat(Sprague-Dawley Rat). We divided the participants into two groups; irradiation group which was irradiated one hour a day for 9 consecutive days, and none irradiation group. The results showed that the study group had lower incidence of inflammation and faster recovery, compared with the control group.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.452-455
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• 2007

This paper provides an overview on the characteristics of a-SiC:H barrier film deposited for flexible display applications. Key characteristics such as high crack resistance, high thermal/hydro stability, excellent adhesion to the polymer substrate, as well as very low permeance has been demonstrated. The excellence of this barrier film has been shown from competitive analysis compared with other barrier coating materials. Finally, flexible Polymer Light Emitting Diode (PLED) test pixels have been fabricated on the barrier coated plastic substrate, demonstrating the viability of the device with lifetime data.