• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1034-1037
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.145-146
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• 2000

Primary emphasis was placed on the electrophoretic deposition of low voltage phosphor to indium-tin oxide-coated glass for the application of field emission display. The phosphor deposited by various parameters, such as deposition time and applied voltages was examined in detail. In addition, a comparison was made by analyzing luminance properties of the phosphor mixed with and without conducting $In_2O_3$ powder of less than 1um size. The measurement was performed as a function of $In_2O_3$ concentration from 3% to 15% by weight. The enhanced impact of indium powder mixing on the phosphor was clearly demonstrated by aging performance curve at 1000V excitation voltages with a current density of $1\;mA/cm^2$

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.9-17
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• 1996

Plasma enhanced chemical vapor deposition (PECVD) allows low temperature processing and so it is widely used, but it causes instability of devices due to serious amount of impurities within the film. In this paper, electrical and chemical characteristics of the PECVD oxynitride film formed by different N$_{2}$O to N$_{2}$O+NH$_{3}$ gas ratio is studied. It has been found that hydrogen concentration of PECVD oxynitride film was decreased from 4.25*10$^{22}$ [cm$^{-2}$ ] to 1.18*10$^{21}$ [cm$^{-2}$ ] according to the increase of N$_{2}$O gas. It was also found that PECVD oxynitride films have low trap density in the oxide and interface in comparison with PECVD nitroxide films, and has higher refractive index and capacitance than oxide films. In particular, oxynitride film formed in gas ratio of N$_{2}$O/(N$_{2}$O+NH$_{3}$)= 0.88 shows increased capacitance and decreased leakage current due to small portion of hydrogen in oxide and the accumulation of nitrogen about 4[atm.%] at the interface.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1598-1600
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$ The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ (<$200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC vanes with $T_f$.

• Electronics and Telecommunications Trends
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• v.37 no.5
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• pp.11-21
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• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

• New & Renewable Energy
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• v.19 no.4
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• pp.53-60
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• 2023

The Computational Fluid Dynamics (CFD) model is a method of studying the flow phenomenon of fluid using a computer and finding partial differential equations that dominate processes such as heat dispersion through numerical analysis. Through CFD, a lot of information about flow disorders such as speed, pressure, density, and concentration can be obtained, and it is used in various fields from energy and aircraft design to weather prediction and environmental modeling. The simulation used for fluid analysis in this study utilized Gexcon's (FLACS) CODE, such as Norway, through overseas journals, for the accuracy of the analysis results through many experiments. It was analyzed that a technology for treating two or more catalysts with physical properties under low-temperature atmospheric pressure conditions could not be found in the prior art. Therefore, it would be desirable to establish a continuous plan by reinforcing data that can prove the effectiveness of producing efficient synthetic oil (renewable oil) through the application that pyrolysis under low-temperature and atmospheric pressure conditions.

• KSBB Journal
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• v.7 no.2
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• pp.92-95
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• 1992

A model for the role of serum was proposed to develop a low serum medium for the large scale cu1ture of mammalian cell. The strategy of medium development adopted in this study facilitated the understanding of the role being carried out by the serum in the culture of hybridoma KAl12 cell line. In this model, the serum components were divided into two main groups : the first group encompasses the nutrient factors that determine the maximum cell density and the second group includes the growth factors that regulate the cell growth rate, The model prediction was compared with the experimental results. The model enabled us to find out several useful aspects of medium composition for cell growth. 1) One particular component in the basal medium became limiting factor when serum concentration level was more than 7%. 2) The growth regulating factors and nutrient factors limited the cell growth at 3% and 5% serum concentration levels respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.595-601
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• 2009

For the silicon oxide $(SiO_x)$ films prepared by using the facing target sputtering (FTS) apparatus that was manufactured to enhance the preciseness of the fabricated thin-film and sputtering yield rate by forming a higher-density plasma in the electrical discharge space for using it as a thin-film passivation system for flexible organic light emitting devices (FOLEDs). The deposition characteristics were investigated under various process conditions, such as array of the cathode magnets, oxygen concentration$(O_2/Ar+O_2)$ introduced during deposition, and variations of distance between two targets and working pressure. We report that the optimum conditions for our FTS apparatus for the deposition of the $SiO_x$ films are as follows: $d_{TS}\;and\;d_{TT}$ are 90mm and 120mm, respectively and the maximum deposition rate is obtained under a gas pressure of 2 mTorr with an oxygen concentration of 3.3%. Under this optimum conditions, it was found that the $SiO_x$ film was grown with a very high deposition rate of $250{\AA}$/min by rf-power of $4.4W/cm^2$, which was significantly enhanced as compared with a deposition rate (${\sim}55{\AA})$/min) of the conventional sputtering system. We also reported that the FTS system is a suitable method for the high speed and the low temperature deposition, the plasma free deposition, and the mass-production.

• ALGAE
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• v.18 no.4
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• pp.281-288
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• 2003

To study the environmental features causing a bloom of the novel dinoflagellate Heterocapsa circularisquama (Dinophyceae), hydrographic and chemical aspects were measured in the Uranouchi Bay, Kochi Prefecture, Japan, from January to December, 1997. The cell density of H. circularisquama increased rapidly in early October, and dropped sharply in mid-October. Growth rate of H, circularisquama during bloom period appeared 1.50 division day$^{-1}$ under high water temperature (25$^{\circ}C$) and salinity (32 psu) conditions. Althought the result from hydrographic aspect indicated good condition for their growth, dissolved inorganic phosphorus (DIP) concentration in surface layer before bloom formation was less than 0.70uM, which is lower than their half saturation constant(Ks). Dissolved inorganic nitrogen(DIN): DIP ratio was > 30, indicating potential P-limitation. However, before bloom formation period of H. circularisquama, DIP concentrations were high in bottom layer (> 4.0 uM). Some studies reported that H. circularisquama had the ability to migrate vertically and to utilize dissolved organic phosphorus (DOP). Thus, DIP in bottom layer might have been utilized by H. circularisquama for their growth.DOP might have weakly affected their growth because of low reactive DOP concentrations owing to low DOP concentration (ca. 0.39 uM). Thus, if nutrient condition of bottom layer in Uranuchi Bay is not improved, the outbreaks of H. circularisquama red tides may became an annual feature.

• Nuclear Engineering and Technology
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• v.55 no.4
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• pp.1218-1224
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• 2023

We investigated the radiation shielding competence for TeO₂-V₂O₅-MoO₃ glasses. The Phy-X software was used to report the radiation shielding parameters for the present glasses. With an increase in TeO₂ and MoO₃ content, the samples' linear attenuation coefficient improves. However, at low energies, this change is more apparent. At low energy, the present samples have an effective atomic number (Z_eff) that is relatively high (in order of 16.17-24.48 at 0.347 MeV). In addition, the findings demonstrated that the density of the samples is a very critical factor in determining the half value layer (HVL). The minimal HVL for each sample can be found at 0.347 MeV and corresponds to 1.776, 1.519, 1.391, 1.210 and 1.167 cm for Te1 to Te5 respectively. However, the highest HVL of these glasses is recorded at 1.33 MeV, which corresponds to 3.773, 3.365, 3.218, 2.925 and 2.908 cm respectively. The tenth value layer results indicate that the thickness of the specimens needs to be increased in order to shield the photons that have a greater energy. Also, the TVL results demonstrated that the sample with the greatest TeO₂ and MoO₃ concentration has a higher capacity to attenuate photons.