• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.38 no.2 s.115
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• pp.16-21
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• 2006

Uneven ink transfer of a print can be traced to several causes such as an incomplete contact between the paper surface and ink film, a coarse pattern of a continuous ink film after transfer, uneven absorption, etc. Uneven ink transfer was studied in this points by the Tollenaar. Uneven distributions of printed density are reflected in low ${\ulcorner}m{\lrcorner}$ values of the print. Tollenaar's smoothness coefficient ${\ulcorner}m{\lrcorner}$ value was important factor that deciding printed quality which was easily obtain by densitometry. Limiting print density $D_{\infty}$ that obtained Tollenaar's formulation working as a influence factor at the printed quality. In this study, we obtained limiting print density $D_{\infty}$ and smoothness coefficient ${\ulcorner}m{\lrcorner}$ value of domestic newspapers and foreign newspapers. And we analyzed about properties of the newspaper. The result of this study, smoothness coefficient ${\ulcorner}m{\lrcorner}$ value and limiting print density $D_{\infty}$ showed the good results in the low porosity and low roughness newspaper. Datum which obtained by this study was used as printability factor for the quality control and improvement of domestic newspaper and wished to apply as a basic data for the domestic newspaper quality.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.704-710
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• 2000

Metal electrode materials for plasma display panel should have low electrical resistivity in order to maintain stable gas discharge and have fast response time. They should also hae good film uniformity adhesion and thermal stability. In this study Cr/Cu/Cr metal electrode structure is formed by DC magnetron sputtering. Cr and Cu films were deposited on ITO coated glasses with various DC power density and main pressures as the major parameters. After metal electrodes were formed a heat treatment was followed at 55$0^{\circ}C$ for 20 min in a vacuum furnace. The intrinsic stress of the sputtered Cr film passed a tensile stress maximum decreased and then became compressive with further increasing DC power density. Also with increasing the main pressure stress turned from compression to tension. After heat the treatment the electrical resistivity of the sputtered Cu film of 2${\mu}{\textrm}{m}$ in thickness prepared at 1 motor with the applied power density of 3.70 W/cm$^2$was 2.68 $\mu$$\Omega$.cm With increasing the main pressure the DC magnetron sputtered Cu film became more open structure. The heat treatment decreased the surface roughness of the sputtered Cr/Cu/Cr metal electrodes.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.204.2-204.2
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• 2014

Among various metal oxides, ZrO2 is of particular interests and has received widespread attention thanks to its ideal mechanical and chemical stability. As a cheap metal, Ag nanoparticles are also widely used as catalysts in ethylene epoxidation and methanol oxidation. However, the nature of Ag-ZrO2 interfaces is still unknown. In this work, the growth, interfacial interaction and thermal stability of Ag nanoparticles on ZrO2(111) film surfaces were studied by low-energy electron diffraction (LEED), synchrotron radiation photoemission spectroscopy (SRPES), and X-ray photoelectron spectroscopy (XPS). The ZrO2(111) films were epitaxially grown on Pt(111). Three-dimensional (3D) growth model of Ag on the ZrO2(111) surface at 300 K was observed with a density of ${\sim}2.0{\times}1012particles/cm2$. The binding energy of Ag 3d shifts to low BE from very low to high Ag coverages by 0.5 eV. The Auger parameters shows the primary contribution to the Ag core level BE shift is final state effect, indicating a very weak interaction between Ag clusters and ZrO2(111) film. Thermal stability experiments demonstrate that Ag particles underwent serious sintering before they desorb from the zirconia film surface. In addition, large Ag particles have stronger ability of inhibiting sintering.

• Journal of the Korean institute of surface engineering
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• v.15 no.1
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• pp.11-18
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• 1982

80% Ni-Permalloy is soft magnetic material with high initial permeability and low magnetic coercive force Hc, and is used to computer memory cores and minirelays of communication e-ngineering. In this paper 80 Permalloy thin film on copper cathode was alloy-deposited from Watts so-lution contatining FeSO4$.$7H2O. The amount of FeSO4$.$7H2O in the solution, pH, temperature of the solution and plating current density were varied as parameters and the resulting comp-osition changes of deposited film were analyzed electrochemically with respect to the parame-ters. From the above procedure electroplating conditions for deposition of 80 Permalloy were est-ablished as following: 17-21 g/$\ell$ of FeSO4$.$7H2O in Watts solution, current density 1.0-2.0 Amp/dm2, pH 2.5-3.0 and temperature range of 50-60$^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.164-168
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• 2011

Nanocrystalline cadmium sulphide (CdS) thin films were prepared using chemical bath deposition (CBD), and the structural, optical and photoconductive properties were investigated. The crystal structure of CdS thin film was studied by X-ray diffraction. The crystallite size, dislocation density and lattice constant of CBD CdS thin films were investigated. The dislocation density of CdS thin films initially decreases with increasing film thickness, and it is nearly constant over the thickness of 2,500 ${\AA}$. The dislocation density decreases with increasing the crystallite size. The Urbach energies of CdS thin films are obtained by fitting the optical absorption coefficient. The optical band gap of CdS thin films increases and finally saturates with increasing the lattice constant. The Urbach energy and optical band gap of the 2,900 A-thick CdS thin film prepared for 60 minutes are 0.24 eV and 2.83 eV, respectively. The activation energies of the 2,900 ${\AA}$-thick CdS thin film at low and high temperature regions were 14 meV and 31 meV, respectively. It is considered that these activation energies correspond to donor levels associated with shallow traps or surface states of CdS thin film. Also, the value of ${\gamma}$ was obtained from the light transfer characteristic of CdS thin film. The value of ${\gamma}$ for the 2,900 A-thick CdS thin film was 1 at 10 V, and it saturates with increasing the applied voltage.

• Journal of the Korean institute of surface engineering
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• v.24 no.4
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• pp.179-186
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• 1991

The effects of silicone contents and flow rates(agitation rates) of electrolyte on the formation and mechanical properties of hard anodized film of Al-Si alloy have been studied in 12% H2SO4 + 1% Oxalic acid with varying the silicone contents in the rance of 0 to 11.6% and the flow rates of electrolyte in the range of 0 to 90cm/sec. The film forming voltage required to maintain an equivalent current density significantly increase with the silicone content of Al-Si alloys due to a low conductivity of silicone. Hardness and wear resistance of the anodized film of Al-Si alloys decreases wit increasing the silicone content. The increase in the flow rate of electrolyte has a similar influence on the formation and mechanical properties of anodized film as does the decrease in bath temperature. Hardness of anodized film is rapidly increased with the flow rate being increased from 10cm/sec. It is observed that the increase in the flow rate from 11cm/sec. It is observed that the increase in the flow from 11cm/sec to 48cm/sec is more effective in enhancing the hardness of film than is the decrease in bath temperature from 1$0^{\circ}C$ to $0^{\circ}C$.

• Korean Journal of Materials Research
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• v.19 no.10
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• pp.544-549
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• 2009

Activated carbon (AC) with very large surface area has high capacitance per weight. However, such activation methods tend to suffer from low yields, below 50%, and are low in electrode density and capacitance per volume. Carbon NanoFibers (CNFs) had high surface area polarizability, high electrical conductivity and chemical stability, as well as extremely high mechanical strength and modulus, which make them an important material for electrochemical capacitors. The electrochemical properties of immobilized CNF electrodes were studied for use as in electrical double layer capacitor (EDLC) applications. Immobilized CNFs on Ni foam grown by thermal chemical vapor deposition (CVD) were successfully fabricated. CNFs had a uniform diameter range from 50 to 60 nm. Surface area was 56 m$^2$/g. CNF electrodes were compared with AC and multi wall carbon nanotube (MWNT) electrodes. The electrochemical performance of the various electrodes was examined with aqueous electrolyte of 2M KOH. Equivalent series resistance (ESR) of the CNF electrodes was lower than that of AC and MWNT electrodes. The specific capacitance of 47.5 F/g of the CNF electrodes was achieved with discharge current density of 1 mA/cm$^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1266-1269
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• 2007

Polycrystalline silicon (poly-Si) films were prepared directly on plastic substrates at a low (< $200^{\circ}C$) by using Catalytic Chemical Vapor Deposition (Cat-CVD) technique without subsequent annealing steps. Surface roughness of the poly-Si layer and the density of the gate dielectric layer were found to be influential to the TFT performance.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1038-1041
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• 2003

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.409-409
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• 2011

All solid-state thin film lithium batteries have many applications in miniaturized devices because of lightweight, long-life, low self-discharge and high energy density. The research of cathode materials for thin film lithium batteries that provide high energy density at fast discharge rates is important to meet the demands for high-power applications. Among cathode materials, lithium manganese oxide materials as spinel-based compounds have been reported to possess specific advantages of high electrochemical potential, high abundant, low cost, and low toxicity. However, the lithium manganese oxide has problem of capacity fade which caused by dissolution of Mn ions during intercalation reaction and phase instability. For this problem, many studies on effect of various transition metals have been reported. In the preliminary study, the Sn-substituted LiMn2O4 thin films prepared by pulsed laser deposition have shown the improvement in discharge capacity and cycleability. In this study, the thin films of LiMn2O4 and LiSn0.0125Mn1.975O4 prepared by RF magnetron sputtering were studied with effect of deposition parameters on the phase, surface morphology and electrochemical property. And, all solid-state thin film batteries comprised of a lithium anode, lithium phosphorus oxy-nitride (LiPON) solid electrolyte and LiMn2O4-based cathode were fabricated, and the electrochemical property was investigated.