• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.228-231
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• 2002

We report the effect of density of thin films on moisture adsorption and hydration of MgO thin film, usually used as a protective layer in AC-PDP After hydration, lots of hemispherical shaped clusters, $Mg(OH)_2$, formed on the surface of MgO thin films. However clusters formed on low-density thin films were bigger than those on high-density films. From ERD spectra, it seemed that the concentration of hydrogen was very high in the region 20 nm from the surface of MgO thin film. The low-density thin film had more hydrogen than high-density thin film. From simulation results of ERD and RBS it was found that hydration reaction also occurred in the inner part of the film. So diffusion of Mg atoms from the inner part of the film to the surface and $H_2O$ molecules from the surface to the inner part of the film is important. And because low density thin film has many short paths for diffusion of Mg atoms and $H_2O$ molecules, low-density thin film is more hydrated. So to suppress hydration of MgO thin films, high-density thin film is needed.

• 한국항공우주학회지
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• 제49권10호
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• pp.841-847
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• 2021

본 논문에서는 저밀도 표면필름 구리망에 대한 비행체 적용 가능성을 분석하였다. 최근 기존 표면 필름 구리망에서 중량 및 비용을 절감할 수 있도록 표면 필름의 두께를 낮춘 저밀도 표면 필름 구리망이 개발되었다. 이러한 저밀도 표면필름 구리망을 비행체에 적용하기 위해서는 샌드위치 구조에서의 핀 홀 방지 효과와 같은 제작성 확인과 함께 적용 시 전자기 영향성에 대한 분석이 필요하다. 따라서 본 연구에서는 저밀도 필름 구리망 2종과 기존 비행체 적용 구리망 1종에 대해 제작성 및 전자기 영향성을 분석하였다. 표면 구리망에 대한 제작성은 샌드위치 복합재와 표면 구리망을 결합하여 핀 홀 방지효과를 확인하였다. 전자기 영향성 분석은 3D 전자기파 시뮬레이션을 통해 각 샘플에 대한 주기구조를 이용하여 해석하였으며, 자유공간 측정방법을 이용한 저밀도 필름 구리망의 전자기파 투과특성 측정결과를 통해 시뮬레이션 결과가 유효함을 확인하였다. 위 결과로 비행체 적용이 필요한 저밀도 표면필름 구리망에 대한 해석 및 비행체 적용 가능성을 판단할 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• 한국정밀공학회지
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• 제25권8호
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• pp.88-95
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• 2008

Young's modulus of electroplated nickel thin film is systematically investigated using the resonance method of atomic force microscope. Thin layers of nickel to be measured are electroplated onto the surface of an AFM silicon cantilever and Young's modulus of plated nickel film is investigated as a function of process conditions such as the plating temperature and applied current density. It is found that Young's modulus of plated nickel thin film is as high as that of bulk nickel at low plating temperature or low current density, but decreases with increasing plating temperature or current density. The results imply that the plating rate increases as increasing the plating temperature or current density, therefore, slow plating rate produces a dense plating material due to the sufficient time fur nickel ions to form a dense coating.

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 2003년도 The Korea-Japan Joint Symposium
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• pp.35-36
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• 2003

The purpose of this work is to investigate the surface modification of LDPE film via corona discharge treatment and subsequent graft polymerization, and their effect on the resulting dyeability is studied in terms of the surface functional groups, surface energetics, and acid-base interaction between the modified LDPE and the dyes used.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.370-370
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• 2007

The liquid crystal (LC) aligning capabilities treated on the Organic overcoat thin film surfaces by ion beam irradiation and rubbing method was successfully studied for the first time. The Organic overcoat layer was coated by spin-coating. In order to characterize the LC alignment, the microscope, pretilt angle, thermal stress, and atomic force microscopy (AFM) image was used. The good LC aligning capabilities treated on the Organic overcoat thin film surfaces with ion beam exposure of $45^{\circ}$ above ion beam energy density of 1200 eV can be achieved. But, the alignment of defect of NLC on the Organicovercoat surface at low energy density of 600 eV was measured. The pretilt angle of NLC on the Organic overcoat thin film surface with ion beam exposure of $45^{\circ}$ for 1 min at energy density of 1800eV was measured about 1.13 degree. But, low pretilt angles of NLC on the Organic overcoat thin film surface with ion beam exposure at energy density of 600, 1200, 2400, and 3000 eV was measured. Also, the pretilt angle of NLC on the rubbed Organic overcoat thin film surfaces was measured about 0.04 degrees. Finally, the good thermal stability of LC alignment on the Organic overcoat thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be measured.

• 폴리머
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• 제27권2호
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• pp.98-105
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• 2003

오존 처리된 저밀도 폴리에틸렌 (LDPE) 필름의 표면 작용기와 표면 자유에너지에 대하여 고찰하였다. 오존 표면처리 조건을 각각 처리시간, 오존 생산량, 그리고 오존의 농도로 변화시켰으며, 오존 처리된 LDPE 필름 표면에 도입된 작용기는 FTIR-ATR과 XPS 분석을 통하여 알아보았다 LDPE 필름의 표면 자유에너지는 접촉각 측정을 통하여 고찰하였다. 실험결과, 오존으로 표면처리된 LDPE 픽름은 표면에 형성된 산소 함유 작용기로 인하여 물 접촉각이 15$^{\circ}$ 정도 감소하였고, 그 결과 표면 자유에너지의 증가및 $O_{IS}$ / $C_{IS}$ 의 증가를 확인할 수 있었다. 또한, 표면 자유에너지와 산소 함유 작용기는 오존 표면처리 시간과 오존의 농도에 비례하는 관계를 보인 반면, 오존의 총 발생량의 변화는 표면 자유에너지 및 $O_{IS}$ / $C_{IS}$ 의 증가와는 무관하였다. Kubelka-Munk 식을 이용한 염색성 측정 결과로부터, 오존 표면처리는 LDPE 필름 표면에 산소 작용기를 형성시키는데 중요한 역할을 하는 것을 확인할 수 있었으며, 최종 염기성 염료에의 염색성을 향상시켰다.

• Bulletin of the Korean Chemical Society
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• 제28권12호
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• pp.2481-2485
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• 2007

Spatially resolved, quantitative, non-destructive analysis using synchrotron x-ray reflectivity (XR) with subnano-scale resolution was successfully performed on the nanoporous organosilicate thin films for low dielectric applications. The structural information of porous thin films, which were prepared with polymethylsilsesquioxane and thermally labile 4-armed, star-shaped poly(ε-caprolactone) (PCL) composites, were characterized in terms of the laterally averaged electron density profile along with a film thickness as well as a total thickness. The thermal process used in this work caused to efficiently undergo sacrificial thermal degradation, generating closed nanopores in the film. The resultant nanoporous films became homogeneous, well-defined structure with a thin skin layer and low surface roughness. The average electron density of the calcined film reduced with increase of the initial porogen loading, and finally leaded to corresponding porosity ranged from 0 to 22.8% over the porogen loading range of 0-30 wt%. In addition to XR analysis, the surface and the inner structures of films are investigated and discussed with atomic force and scanning electron microscopy images.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권12호
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• pp.558-560
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• 2005

The carbon film was deposited by the electrolysis of methanol solution. Carbon films have been grown on silicon substrates using the method of chemical process. From investigations of the Raman spectroscopy and the FTIR spectroscopy, the carbon film deposited by the electrolysis was identified the hydrogenated carbon film with the porous structure. The carbon film deposited by elctrolysis of methanol was identified as the hydrogenated carbon film with porous structure. Deposition parameters for the growth of the carbon films were current density, methanol liquid temperature. We electrical resistance and surface morphology of carbon films formed various conditions specified by deposition parameters. It was clarified that the high electrical resistance carbon films with smooth surface morphology are grown when a distance between the electrodes is relatively wider. We found that the electrical resistance in the films independent of both current density and methanol liquid temperature. The temperature dependence of the electrical resistance in the low resistance carbon films is different from one obtained in graphite..

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.334-338
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• 2006

Poly silicon TFT requires high quality dielectric film; conventional method of growing silicon dioxide needs highly hazardous chemicals such as silane. We have grown high quality dielectric film of silicon dioxide using non-hazardous chemical such as TFOS and ozone as reaction gases by APCVD. The films grown were characterized through C-V curves of MOS structures. Conventional APCVD requires high temperature processing where as in the process of current study, we developed a low temperature process. Interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in nitrogen ambient. The interface with such low trap density could be used for poly silicon TFT fabrication with cheaper cost and potentially less hazards.