• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.228-231
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• 2002

We report the effect of density of thin films on moisture adsorption and hydration of MgO thin film, usually used as a protective layer in AC-PDP After hydration, lots of hemispherical shaped clusters, $Mg(OH)_2$, formed on the surface of MgO thin films. However clusters formed on low-density thin films were bigger than those on high-density films. From ERD spectra, it seemed that the concentration of hydrogen was very high in the region 20 nm from the surface of MgO thin film. The low-density thin film had more hydrogen than high-density thin film. From simulation results of ERD and RBS it was found that hydration reaction also occurred in the inner part of the film. So diffusion of Mg atoms from the inner part of the film to the surface and $H_2O$ molecules from the surface to the inner part of the film is important. And because low density thin film has many short paths for diffusion of Mg atoms and $H_2O$ molecules, low-density thin film is more hydrated. So to suppress hydration of MgO thin films, high-density thin film is needed.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.49 no.10
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• pp.841-847
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• 2021

In this paper, the applicability of the low-density surface film copper mesh for aircraft applications have been analyzed. Recently, low-density surface film copper mesh is developed to reduce weight and cost compared with traditional surface film copper mesh. In order to apply low-density surface film copper mesh to aircraft, it is needed to analyze its electromagnetic effects as well as structural integrity with sandwich panels to prevent pinholes. The structural integrity and electromagnetic characteristics have been analyzed for 2 samples of low-density surface film copper mesh and 1 sample of surface film copper mesh. To review the applicability of the low-density surface film, it is combined with sandwich composite panel to confirm pinhole effects. The low-density surface film has been modeled as a periodic structure and analyzed with 3D electromagnetic simulation tool. The simulation results has been verified through measured electromagnetic transmission results using free space measurements. From the results, it will be possible to use these results for the analysis and the applicability of low-density surface film copper mesh for aircraft.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.8
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• pp.88-95
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• 2008

Young's modulus of electroplated nickel thin film is systematically investigated using the resonance method of atomic force microscope. Thin layers of nickel to be measured are electroplated onto the surface of an AFM silicon cantilever and Young's modulus of plated nickel film is investigated as a function of process conditions such as the plating temperature and applied current density. It is found that Young's modulus of plated nickel thin film is as high as that of bulk nickel at low plating temperature or low current density, but decreases with increasing plating temperature or current density. The results imply that the plating rate increases as increasing the plating temperature or current density, therefore, slow plating rate produces a dense plating material due to the sufficient time fur nickel ions to form a dense coating.

• Proceedings of the Korean Fiber Society Conference
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• 2003.10a
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• pp.35-36
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• 2003

The purpose of this work is to investigate the surface modification of LDPE film via corona discharge treatment and subsequent graft polymerization, and their effect on the resulting dyeability is studied in terms of the surface functional groups, surface energetics, and acid-base interaction between the modified LDPE and the dyes used.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.370-370
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• 2007

The liquid crystal (LC) aligning capabilities treated on the Organic overcoat thin film surfaces by ion beam irradiation and rubbing method was successfully studied for the first time. The Organic overcoat layer was coated by spin-coating. In order to characterize the LC alignment, the microscope, pretilt angle, thermal stress, and atomic force microscopy (AFM) image was used. The good LC aligning capabilities treated on the Organic overcoat thin film surfaces with ion beam exposure of $45^{\circ}$ above ion beam energy density of 1200 eV can be achieved. But, the alignment of defect of NLC on the Organicovercoat surface at low energy density of 600 eV was measured. The pretilt angle of NLC on the Organic overcoat thin film surface with ion beam exposure of $45^{\circ}$ for 1 min at energy density of 1800eV was measured about 1.13 degree. But, low pretilt angles of NLC on the Organic overcoat thin film surface with ion beam exposure at energy density of 600, 1200, 2400, and 3000 eV was measured. Also, the pretilt angle of NLC on the rubbed Organic overcoat thin film surfaces was measured about 0.04 degrees. Finally, the good thermal stability of LC alignment on the Organic overcoat thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be measured.

• Polymer(Korea)
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• v.27 no.2
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• pp.98-105
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• 2003

The surface energy and the effect of functional groups on the surface of the ozone-treated low-density polyethylene (LDPE) film were studied. Treatment conditions were treatment time, total amount of transferred ozone, and ozone concentration. The introduction of polar groups on the surface of LDPE film after ozone treatment was confirmed by FTIR-ATR and XPS analyses. Surface fee energy of the LDPE film was examined by a contact angle method. The ozone treated-LDPE film showed a decreased water contact angles about 15$^{\circ}$ mainly due to the increased concentration of oxygen-containing functional groups, which was attributed to the increased surface free energy or $O_{IS}/C_{IS}$Also, the concentrations of the oxygen-containing functional groups on the surface of LDPE film increased with ozone treatment time and concentration, whereas no significant effects were found for the total amount of transferred ozone. From the dyeability test using Kubelka-Munk equation, it was found that the ozone treatment plays an important role in the growth of oxygen-containing functional groups of LDPE film, resulting in the improvement of dyeability for basic dyeing agent.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2481-2485
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• 2007

Spatially resolved, quantitative, non-destructive analysis using synchrotron x-ray reflectivity (XR) with subnano-scale resolution was successfully performed on the nanoporous organosilicate thin films for low dielectric applications. The structural information of porous thin films, which were prepared with polymethylsilsesquioxane and thermally labile 4-armed, star-shaped poly(ε-caprolactone) (PCL) composites, were characterized in terms of the laterally averaged electron density profile along with a film thickness as well as a total thickness. The thermal process used in this work caused to efficiently undergo sacrificial thermal degradation, generating closed nanopores in the film. The resultant nanoporous films became homogeneous, well-defined structure with a thin skin layer and low surface roughness. The average electron density of the calcined film reduced with increase of the initial porogen loading, and finally leaded to corresponding porosity ranged from 0 to 22.8% over the porogen loading range of 0-30 wt%. In addition to XR analysis, the surface and the inner structures of films are investigated and discussed with atomic force and scanning electron microscopy images.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.12
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• pp.558-560
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• 2005

The carbon film was deposited by the electrolysis of methanol solution. Carbon films have been grown on silicon substrates using the method of chemical process. From investigations of the Raman spectroscopy and the FTIR spectroscopy, the carbon film deposited by the electrolysis was identified the hydrogenated carbon film with the porous structure. The carbon film deposited by elctrolysis of methanol was identified as the hydrogenated carbon film with porous structure. Deposition parameters for the growth of the carbon films were current density, methanol liquid temperature. We electrical resistance and surface morphology of carbon films formed various conditions specified by deposition parameters. It was clarified that the high electrical resistance carbon films with smooth surface morphology are grown when a distance between the electrodes is relatively wider. We found that the electrical resistance in the films independent of both current density and methanol liquid temperature. The temperature dependence of the electrical resistance in the low resistance carbon films is different from one obtained in graphite..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.334-338
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• 2006

Poly silicon TFT requires high quality dielectric film; conventional method of growing silicon dioxide needs highly hazardous chemicals such as silane. We have grown high quality dielectric film of silicon dioxide using non-hazardous chemical such as TFOS and ozone as reaction gases by APCVD. The films grown were characterized through C-V curves of MOS structures. Conventional APCVD requires high temperature processing where as in the process of current study, we developed a low temperature process. Interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in nitrogen ambient. The interface with such low trap density could be used for poly silicon TFT fabrication with cheaper cost and potentially less hazards.