• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.435-436
• /
• 2007

In general, Single gap transflective FFS display has an in-cell retarder (ICR) between reflective electrode and liquid crystal (LC) layer. Therefore, Operating voltage is highly increased due to this thick dielectric material. But, we also knew the phenomenon that the increasing rate of Vop is different whether the 1st common electrode was composed of plate type or slit type. In this paper, the common electrode in transmissive part was composed of slit type which had less steepness effect of the V op and in reflective part was composed of plate type. The rubbing angle of reflective part can be adjusted properly to match the voltage dependent transmittance and reflectance.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1995년도 추계학술대회 논문집
• /
• pp.302-305
• /
• 1995

ITO(indium tin oxide) that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. Nowaday, according to the development of flat panel display such as LCD(Liquid Crystal display, EL(electolumine- scence display), PDP(plasma display panel), ECD(electrocromic display), the higher quality in the low temperature process has been asked to reduce the production cost and to have a good uniformity on a large substrate. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. To reduce the defact in ITO, the effect on ITO by varing the magnetic field intensity and the applied voltage ares studied. the resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140$^{\circ}C$. is 1.6${\times}$10$\^$-1/$\Omega$$.$cm with 85% optical transmission in viaible ray.

• Nuclear Engineering and Technology
• /
• 제45권1호
• /
• pp.53-60
• /
• 2013

Bentonite is generally used as a buffer material in high-level radioactive waste disposal facilities and consists of 50% quartz by weight. Quartz strongly affects the behavior of bentonite over very long periods. For this reason, quartz dissolution experiment was performed under high-pressure and high-alkalinity conditions based on the conditions found in a high-level radioactive waste disposal facility located deep underground. In this study, two quartz dissolution experiments were conducted on 1) quartz beads under low-pressure and high-alkalinity conditions and 2) a single quartz crystal under high-pressure and high-alkalinity conditions. Following the experiments, a confocal laser scanning microscope (CLSM) was used to observe the surfaces of experimental samples. Numerical analyses using the finite element method (FEM) were also performed to quantify the deformation of contact area. Quartz dissolution was observed in both experiments. This deformation was due to a concentrated compressive stress field, as indicated by the quartz deformation of the contact area through the FEM analysis. According to the numerical results, a high compressive stress field acted upon the neighboring contact area, which showed a rapid dissolution rate compared to other areas of the sample.

• 동굴
• /
• 제79호
• /
• pp.77-81
• /
• 2007

In this paper deals with behavior of the magnetic abrasive using Sr-Ferrite on polishing charateristiccs in a internal finishing of staninless steel pipe a tying magnetic abrasive polishing. The magnetic polishing is the useful method to finish some machinery fabrications by using magnetic power. This method is one of the precision techniques and has in aim for clean technology in the transportation of the pure gas in the clean pipes. The magnetic abrasive polishing method is not so common in the field of machine that it is not known to widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper we deals with the development of the magnetic abrasive with the use of Sr-Ferrite. In this development, abrasive grain SiC has been made by using the resin bond fabricated at low temperature. And magnetic abrasive powder was fabricated from the Sr-Ferrite which was crushed into 200 mesh. The XRD analysis result shows that only SiC abrasive and Sr-Ferrite crystal peaks were detected, explaining that resin bond was not any more to contribute chemical reaction. From MACRO analysis, we found that SiC abrasive and Sr-Ferrite were strongly bonding with each other.

• 한국안전학회지
• /
• 제23권5호
• /
• pp.43-48
• /
• 2008

The magnetic polishing is the useful method to finish some machinery fabrications by using magnetic power. This method is one of the precision polishing techniques and has an aim for clean technology in the transportation of the pure gas in the clean pipes. The magnetic abrasive polishing method is not so common in the field of machine that it is not known to widely. There are only few researchers in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper deals with development of the magnetic abrasive using Ba-Ferrite. In this development, abrasive grain GC and CBN has been made by using the resin bond fabricated at low temperature. And magnetic abrasive powder was fabricated from the Ba-Ferrite which was crushed into 200 mesh. The XRD analysis result shows that only GC, CBN and Ba-Ferrite crystal peaks were detected, explaining that resin bond was not any more to contribute chemical reaction. From SEM analysis, we found that GC, CBN abrasive and Ba-Ferrite were strongly bonding with each other.

• 대한화학회지
• /
• 제66권6호
• /
• pp.451-458
• /
• 2022

LiNi_xMn_yCo_1-(x+y)O₂의 자기특성을 고려한 자기장 이용 결정방향 제어 연구를 통해, LiNi_0.6Mn_0.2Co_0.2O₂ 결정 내 많은 비율의 (00l) plane들이 전극집전체 표면에 수직으로 정렬된 결정배향 전극을 확보하였다. 해당 결정배향 전극은 리튬이차전지의 충방전 과정 중에 낮은 전극 polarization 특성을 나타내었으며, 일반 LiNi_0.6Mn_0.2Co_0.2O₂ 전극 대비 높은 용량을 기록하였다. 결정 배향 전극은 빠른 리튬이온 전달에 적합한 구조적 특성으로 인해 리튬이차전지 성능 향상에 기여한 것으로 예상되었다. 결정배향 전극에 의한 성능 향상을 다양한 전기화학적 이론 및 분석 결과를 통해 검증, 해석하였다.

• 한국재료학회지
• /
• 제12권3호
• /
• pp.195-199
• /
• 2002

Planar Hall effect of ferromagnetic GaMnAs thin films was investigated for the first time. The films were grown in an optimized growth condition via molecular beam epitaxy at low temperatures. For the optimization of the growth conditions, we used reflection high-energy electron diffraction, electrical conductivity, double crystal x-ray diffraction, and superconducting quantum interference device measurements techniques. We observed that the difference between the longitudinal resistance and the transverse resistance matches the planar Hall resistance. The ratio of the planar Hall resistance at saturation magnetic field to that at zero reached above 500%.

• 한국응용과학기술학회지
• /
• 제31권3호
• /
• pp.394-401
• /
• 2014

In order to minimize a building energy consumption with ventilation, a development of smart ventilation system is very important. In this study, a dry adsorbent that is main element of smart ventilation system was developed for removing indoor $CO_2$, and evaluate the adsorption performance. Specific surface area, pore characteristic and crystal structure of the modified sorbent was measured to analyze physical properties. From this analysis, it was found that the developed absorbent has a low specific surface area, due to mesopores of substrate was filled with metal contained raw material. Additionally, through analysis of the adsorption properties, the developed adsorbent was shown a adsorption form of mesopore (type IV), which means adsorption amount was rapidly increased at the part of high-pressure. Order to applying for the field, chamber test was performed. Continuous column tests (2,500 ppm) and batch chamber tests ($4m^3$, 5,000 ppm) showed $CO_2$ removal efficiency of 95% and 88% within 1 hour, respectively.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.265.2-265.2
• /
• 2016

Oxide thin film transistors (TFTs) have attracted considerable interest for gate diver and pixel switching devices of the active matrix (AM) liquid crystal display (LCD) and organic light emitting diode (OLED) display because of their high field effect mobility, transparency in visible light region, and low temperature processing below $300^{\circ}C$. Recently, oxide TFTs with polycrystalline In-Ga-O(IGO) channel layer reported by Ebata. et. al. showed a amazing field effect mobility of $39.1cm^2/Vs$. The reason having high field effect mobility of IGO TFTs is because $In_2O_3$ has a bixbyite structure in which linear chains of edge sharing InO6 octahedral are isotropic. In this work, we investigated the characteristics and the effects of oxygen partial pressure significantly changed the IGO thin-films and IGO TFTs transfer characteristics. IGO thin-film were fabricated by rf-magnetron sputtering with different oxygen partial pressure ($O_2/(Ar+O_2)$, $Po_2$)ratios. IGO thin film Varies depending on the oxygen partial pressure of 0.1%, 1%, 3%, 5%, 10% have been some significant changes in the electrical characteristics. Also the IGO TFTs VTH value conspicuously shifted in the positive direction, from -8 to 11V as the $Po_2$ increased from 1% to 10%. At $Po_2$ was 5%, IGO TFTs showed a high drain current on/off ratio of ${\sim}10^8$, a field-effect mobility of $84cm^2/Vs$, a threshold voltage of 1.5V, and a subthreshold slpe(SS) of 0.2V/decade from log(IDS) vs VGS.

• 한국재료학회지
• /
• 제29권4호
• /
• pp.205-210
• /
• 2019

$Pb(Zr,Ti)O_3$ (PZT) is used for the various piezoelectric devices owing to its high piezoelectric properties. However, lead (Pb), which is contained in PZT, causes various environment contaminations. $(K,Na)NbO_3$ (NKN) is the most well-known candidate for a lead-free composition to replace PZT. A single crystal has excellent piezoelectric-properties and its properties can be changed by changing the orientation direction. It is hard to fabricate a NKN single crystal due to the sodium and potassium. Thus, $(Na,K)NbO_3-Ba(Cu,Nb)O_3$ (NKN-BCuN) is chosen to fabricate the single crystal with relative ease. NKN-BCuN pellets consist of two parts, yellow single crystals and gray poly-crystals that contain copper. The area that has a large amount of copper particles may melt at low temperature but not the other areas. The liquid phase may be responsible for the abnormal grain growth in NKN-BCuN ceramics. The dielectric constant and tan ${\delta}$ are measured to be 684 and 0.036 at 1 kHz in NKN-BCuN, respectively. The coercive field and remnant polarization are 14 kV/cm and $20{\mu}C/cm^2$.